Adsorption and decomposition of triethylsilane on Si(1 0 0)

The adsorption and decomposition of triethylsilane (TES) on Si(1 0 0) were studied using temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). TPD and HREELS data indicate that carbon is thermally removed from the TES-dosed Si(1 0 0) surface via a β-hydride elimination process. At high exposures, TPD data shows the presence of physisorbed TES on the surface. These species are characterized by desorption of TES fragments at 160 K. Non-thermal decomposition of TES was studied at 100 K by irradiating the surface with 600 eV electrons. ESD of mass 27 strongly suggests that a β-hydride elimination process is a channel for non-thermal desorption of ethylene. TPD data indicated that electron irradiation of physisorbed TES species resulted in decomposition of the parent molecule and deposition of methyl groups on the surface that desorbed thermally at about 900 K. Without electron irradiation, mass 15 was not detected in the TPD spectra, indicating that the production of methyl groups in the TPD spectra was a direct result of electron irradiation. XPS data also showed that following electron irradiation of TES adsorbed on Si(1 0 0), carbon was deposited on the surface and could not be removed thermally.     

HREELS study of the adsorption and evolution of diethylamine (DEA) on Si(1 0 0) surfaces

The adsorption of diethylamine (DEA) on Si(1 0 0) at 100 K was investigated using high-resolution electron energy loss spectroscopy (HREELS) and electron stimulated desorption (ESD). The thermal evolution of DEA on Si(1 0 0) was studied using temperature programmed desorption (TPD). Our results demonstrate DEA bonds datively to the Si(1 0 0) surface with no dissociation at 100 K. Thermal desorption of DEA takes place via a β-hydride elimination process leaving virtually no carbon behind. Electronic processing of DEA/Si(1 0 0) at 100 K results in desorption of ethyl groups; however, carbon and nitrogen are deposited on the surface as a result of electron irradiation. Thermal removal of carbon and nitrogen was not possible, indicating the formation of silicon carbide and silicon nitride.     

Tetrakis(diethylamido) titanium (TDEAT) interactions with SiO2 and Cu substrates

X-ray photoelectron spectroscopy (XPS) is used to characterize the chemical interactions of tetrakis(diethylamido) titanium (TDEAT) with SiO₂ and Cu surfaces under ultrahigh vacuum (UHV) conditions. XPS studies show that TDEAT dissociatively chemisorbs on SiO₂ at room temperature or above, resulting in Ti---N bond scission, and Ti---O bond formation. No Ti carbide or Si carbide formation is observed. In the presence of co-adsorbed NH₃, Ti---N bond formation is enhanced and is stable at temperature up to 900 K in UHV. Continuous exposures of TDEAT on SiO₂ at 500 K produce both Ti oxides and nitride formation. The presence of an overpressure of NH₃ enhances Ti nitride formation. In contrast, TDEAT physisorbed on Cu at 120 K and annealed to 500 K results in desorption of Ti-containing species from the surface. Successive exposures of TDEAT on Cu at 500 K yield a Ti-alkyl reaction product. The presence of NH₃ does not significantly alter TDEAT interaction with Cu.     

In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(1 0 0) surface

The intermediates of thermal decomposition of 1,3-disilabutane (SiH₃CH₂SiH₂CH₃, DSB) to form SiC on Si(1 0 0) surface were in situ investigated by reactive ion scattering (RIS), temperature programmed reactive ion scattering (TPRIS), temperature programmed desorption (TPD), and auger electron spectroscopy (AES). DSB as a single molecular precursor was exposed on Si(1 0 0) surface at a low temperature less than 100 K, and then the substrate was heated up to 1000 K. RIS, TPD, and AES investigations showed that DSB adsorbed molecularly and decomposed to SiC via some intermediates on Si(1 0 0) surface as substrate temperature increasing. Between 117 and 150 K molecularly adsorbed DSB desorbed partially and decomposed to CH₄Si₂, which is the first observation on Si(1 0 0) surface, and further decomposed to CH₄Si between 150 and 900 K. CH₄Si lost hydrogen and formed SiC over 900 K.     

Thermal reaction and desorption behaviors of 2,5-diiodothiophene on clean and passivated Au surfaces

Thermal reactions and desorption behaviors of 2,5-diiodothiophene on Au were studied with temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). Diiodo-substituted hetero-cyclic molecules are an important precursor molecule for photochemical production of conjugated polymers. This paper describes the surface reactions and multilayer structure of 2,5-diiodothiophene in the absence of photon irradiation. 2,5-Diiodothiophene adsorbs molecularly on Au at 100 K. At 200-300 K, the C-I bond of the molecule dissociates producing atomic iodine. The C-I bond cleavage appears to induce further dissociation of the thiophene ring structure. The iodine species desorb at 600-750 K from the surface. The dissociated carbon and sulfur remain on the Au surface even at 800 K. The desorption of thin multilayers occurs at ∼220 K. During the desorption of these layers, a clustering process seems to occur. The desorption of thick multilayer occurs at ∼235 K.     

Amorphous SiC film formation on Si(100) using electron beam excitation

The effect of electron impact on methylsilane (CH₃SiH₃) conversion to amorphous-Si_0.5C_0.5:H (a-Si_0.5C_0.5:H) films on Si(100) has been studied by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption (TPD), and low energy electron diffraction (LEED). It is found that electron impact greatly enhances CH₃SiH₃ decomposition on Si(100) at both 90 K and 300 K, resulting in a-Si_0.5C_0.5:H thin film formation. Thermal annealing of the film causes hydrogen desorption and amorphous silicon carbide (a-SiC) formation. Upon annealing to temperatures above 1200 K, the a-SiC film became covered by a thin silicon layer as indicated by AES studies. Ordered structures are not produced by annealing the a-SiC up to 1300 K.     

Characterization and chemical behavior of submonolayer coverages of titania on a Pt foil

The interaction between submonolayer titania coverages and Pt foil has been studied by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). The submonolayer titania can be fully oxidized to TiO₂ at 923 K under 10⁻⁸ Torr O₂, and partially oxidized to TiO_x at lower oxidation temperatures. The oxidized surface can be reduced by annealing to 1000 K or higher, or by heating in H₂ at 823 K, or by interacting with surface carbon formed from acetone decomposition. Under certain conditions (e.g., hydrogen reduction at 923 K), the surface titania can be fully reduced to metallic Ti which diffuses into bulk Pt readily. The reduced metallic Ti can resurface when the surface is oxidized at 923 K. Both XPS and HREELS data indicate the existence of subsurface oxygen, which plays an important role for the diffusion of Ti into and out of the Pt foil. Although no special interfacial active sites were revealed by HREELS studies of adsorbed acetone and CO, some TPD and XPS data suggest the presence of sites active for acetone decomposition.     

Similarities in the decomposition and dehydrogenation of cyclohexene on (4 × 4)-CMo(110) and Pt(111)

The decomposition and dehydrogenation of cyclohexene have been used as probing reactions to directly compare the surface reactivities of carbon-modified Mo(110) and Pt(111). By using temperature programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS), we find that the dominant decomposition pathway of cyclohexene can be converted from complete decomposition to atomic carbon and hydrogen on clean Mo(110) to partial dehydrogenation to benzene and hydrogen on (4 × 4)-CMo(110). The latter reaction mechanism is very similar to that observed on Pt(111). Furthermore, in contrast to the near identical catalytic properties that are commonly observed for bulk molybdenum carbide and nitride powder materials, we find that the reactivities of carbon-modified and nitrogen-modified Mo(110) surfaces are qualitatively different.     

An EELS and TPD study of the adsorption and decomposition of acetic acid on the Al(111) surface

The adsorption and decomposition of acetic acid on Al(111) have been studied using electron energy loss spectroscopy (EELS), temperature programmed desorption (TPD), and Auger electron spectroscopy (AES). Acetic acid reacts with clean Al(111) at 120 K to form a surface acetate species. The adsorbed acetate bonds to the surface in a symmetric configuration with C_s symmetry at 120 K. The adsorption of molecular acetic acid occurs at this temperature only after saturation of the surface acetate layer; this physisorbed multilayer desorbs molecularly at 167 K. Thermal decomposition of the adsorbed acetate leads to a carbon- and oxygen-covered surface; the only detectable thermal decomposition product is H₂. Electron irradiation induces a similar decomposition process of the surface acetate.     

Carbon-oxygen bond strength as a control of reaction kinetics: Phenol on Mo(110)

The reaction of phenol on Mo(110) has been studied using temperature programmed reaction and X-ray photoelectron spectroscopies. After desorption of multilayers and a weakly bound molecular species, decomposition produces the only reaction products observed: gaseous dihydrogen, surface carbon and surface oxygen. The O-H bond cleaves first at temperatures below 360 K to form surface phenoxide (C₆H₅O-), followed by C-H bond activation commencing at 370 K. C-O bonds are cleaved in the temperature range of 370 to 450 K. After annealing to 300 K, multiple species are detected on the surface by X-ray photoelectron spectroscopy. The cleavage of C-H bonds in the same temperature regime as C-O bonds is thought to lead to selective decomposition of phenol on Mo(110). The reaction of phenol is contrasted to that of a sulfur-containing analogue, benzenethiol, on the Mo(110) surface. The stability of the phenoxide intermediate with respect to carbon-heteroatom bond cleavage is greater than that of the corresponding phenyl thiolate formed from benzenethiol. Comparison of the reaction of phenol and benzenethiol demonstrates the importance of C-X (X = O,S) bond strength in determining the reactivity and selectivity of these molecules.     

Adsorption and thermal decomposition of N-methylaniline on Pt(1 1 1)

The adsorption and thermal decomposition of N-methylaniline (NMA) on the Pt(1 1 1) surface has been studied with reflection absorption infrared spectroscopy (RAIRS), temperature programmed desorption (TPD), and X-ray photoelectron spectroscopy (XPS). NMA adsorbs molecularly at 85 K through the nitrogen lone pair and is stable up to 300 K. At temperatures of 300–350 K it converts to two or more surface intermediates including the N-methyleneaniline (NMEA) species. This NMEA intermediate dissociates upon annealing to 450 K, and further annealing leads to the desorption of HCN and H₂, leaving only C on the surface at 800 K.     

Competition between associative and dissociative adsorption of 1,2-dihalogenated benzenes on Si(1 0 0)2 × 1: Formation of dihalocyclohexadiene, halophenyl and phenylene adstructures

The room temperature (RT) adsorption of 1,2-difluorobenzene (1,2-DFB), 1,2-dichlorobenzene (1,2-DCB) and 1,2-dibromobenzene (1,2-DBB) on Si(1 0 0)2 × 1 have been investigated by X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Both XPS and TPD data show that the relative degree of dissociative to associative adsorption of the dihalogenated benzene (DXB) appears to increase with decreasing electronegativity of the halogen atom (X). In particular, the C 1s intensity ratios for the C-H and C-Si components to the C-X component are found to be 2, 3 and 9.6 for 1,2-DFB, 1,2-DCB and 1,2-DBB, respectively. These results indicate that 1,2-DFB, like benzene, exclusively adsorbs molecularly as a difluorocyclohexadiene adspecies on Si(1 0 0)2 × 1 while 1,2-DBB adsorbs predominantly with double debromination to form 1,2-phenylene. The majority of 1,2-DCB (75%) is found to adsorb molecularly, with the rest (25%) undergone single or double dechlorination to form chlorophenyl and phenylene, respectively. All three DXB molecules appear to have similar coverage as benzene. The two molecular desorption features for 1,2-DFB and 1,2-DCE are observed with desorption maxima at 460 K and 540 K similar to those found for benzene, which suggests that the dihalocyclohexadiene adstructures involve similar bonding through the benzene ring. In accord with the XPS data, no molecular desorption feature is observed for 1,2-DBB on the 2 × 1 surface. Further decomposition of the resulting phenylene adstructures is evident from the desorption fragment, C₂H₂, found at 610 K and 740 K. Recombinative desorption of HCl and HBr above 880 K are also found for 1,2-DCB and 1,2-DBB, respectively. The observed differences between associative and dissociative adsorption for the three DXB adsorbates could be attributed not only to the large difference in the C-X bond strength but also to the relative contributions from inductively withdrawing and resonantly donating electrons exerted by the halogen (X) atoms to the benzene ring.     

Interaction of dimethyl methylphosphonate with oxidized iron and the effect of coadsorbed water

The behavior of dimethyl methylphosphonate (DMMP), dosed at 100 K with and without coadsorbed water on oxidized iron has been examined by temperature programmed desorption (TPD) and Auger electron spectroscopy (AES). Molecular and dissociated states of DMMP are readily distinguished by the P(LMM) Auger lineshape. At low coverages DMMP undergoes complete decomposition during heating, leaving carbon, phosphorus and oxygen residues on the surface. The major low temperature decomposition products are CH₃OH, H₂O, CO, H₂ and a surface phosphate species. The DMMP decomposition is limited and large exposures lead to molecular DMMP desorption characteristics of multilayers (200–210 K). Pre-exposure to H₂O increases the extent of DMMP decomposition.     

The adsorption and reaction of H2O on clean and oxygen covered Ag(110)

The adsorption and reaction of water on clean and oxygen covered Ag(110) surfaces has been studied with high resolution electron energy loss (EELS), temperature programmed desorption (TPD), and X-ray photoelectron (XPS) spectroscopy. Non-dissociative adsorption of water was observed on both surfaces at 100 K. The vibrational spectra of these adsorbates at 100 K compared favorably to infrared absorption spectra of ice Ih. Both surfaces exhibited a desorption state at 170 K representative of multilayer H₂O desorption. Desorption states due to hydrogen-bonded and non-hydrogen-bonded water molecules at 200 and 240 K, respectively, were observed from the surface predosed with oxygen. EEL spectra of the 240 K state showed features at 550 and 840 cm^?1 which were assigned to restricted rotations of the adsorbed molecule. The reaction of adsorbed H₂O with pre-adsorbed oxygen to produce adsorbed hydroxyl groups was observed by EELS in the temperature range 205 to 255 K. The adsorbed hydroxyl groups recombined at 320 K to yield both a TPD water peak at 320 K and adsorbed atomic oxygen. XPS results indicated that water reacted completely with adsorbed oxygen to form OH with no residual atomic oxygen. Solvation between hydrogen-bonded H₂O molecules and hydroxyl groups is proposed to account for the results of this work and earlier work showing complete isotopic exchange between H₂¹⁶O_(a) and ¹⁸O_(a).     

退火温度对富硅氮化硅薄膜发光特性和结构的影响

采用直流等离子体增强化学气相沉积(PECVD)法在(100)单晶硅片表面生长富硅氮化硅薄膜,研究了不同的退火温度对氮化硅薄膜发光性质和结构的影响。研究发现,随着退火温度的升高,氮化硅薄膜的发光强度逐渐减弱,发光是由缺陷能级引起的,在900 ℃时荧光基本消失。XPS测试表明,在N₂氛围900 ℃下退火,氮化硅薄膜中未有硅相析出,故未表现出硅量子点的发光。FTIR测试也为PL结论提供了一定的证据。     

An examination of the initial oxidation of a uranium-base alloy (U–14.1 at.% Nb) by O2 and D2O using surface-sensitive techniques

The corrosion resistance of uranium is greatly enhanced by alloying with niobium. In this study the initial stages of corrosion of a specific uranium-base alloy (U–14.1 at.% Nb) by O₂ or D₂O have been examined using the surface specific techniques of X-ray photoelectron spectroscopy (XPS), thermal programmed desorption (TPD), static secondary-ion mass spectroscopy (SSIMS), and sputtered neutrals mass spectroscopy (SNMS). XPS studies of the U–14.1 at.% Nb surface following oxidation using O₂ at 300 K indicate production of a thin oxide overlayer of stoichiometric UO_2.0 intermixed with Nb₂O₅. The same stoichiometry is exhibited for uranium when the oxide is prepared at 500 K with O₂; although, niobium is much less oxidized exhibiting a mixture of NbO and Nb. Contrary to previous XPS literature, SNMS depth profiling studies reveal that oxidation by O₂ is much greater (as judged by oxide layer thickness) than that exhibited by D₂O. An oxide layer thickness of less than 20 Å was created using D₂O as an oxidant at 300 K with exposures >3500 L (oxide layers created from O₂ are significantly greater at much smaller exposures). Formation of a critical density of Nb₂O₅ is suggested to be responsible for the enhanced corrosion resistance by preventing diffusion of O⁻ (O²⁻) or OD⁻/OH⁻ into the oxide/metal interface region. The domains of stability of hydroxyl formation have also been followed using TPD, SSIMS and XPS. Maximal surface hydroxyl concentrations (Θ_rel=0.30) are obtained at a surface temperature of 175 K for these experimental conditions.     

Molecular beam studies of ethanol oxidation on Pd(110)

The adsorption and decomposition of ethanol on Pd(110) has been studied by use of a molecular beam reactor and temperature programmed desorption. It is found that the major pathway for ethanol decomposition occurs via a surface ethoxy to a methyl group, carbon monoxide and hydrogen adatoms. The methyl groups can either produce methane (which they do with a high selectivity for adsorption below 250 K) or can further decompose (which they do with a high selectivity for adsorption above 350 K) resulting in surface carbon. If adsorption occurs above 250 K a high temperature (450 K) hydrogen peak is observed in TPD, resulting from the decomposition of stable hydrocarbon fragments. A competing pathway also exists which involves C---O bond scission of the ethoxy, probably caused by a critical ensemble of palladium atoms at steps, defects or due to a local surface reconstruction. The presence of oxygen does not significantly alter the decomposition pathway above 250 K except that water and, above 380 K, carbon dioxide are produced by reaction of the oxygen adatoms with hydrogen adatoms and adsorbed carbon monoxide respectively. Below 250 K, some ethanol can form acetate which decomposes around 400 K to produce carbon dioxide and hydrogen.     

The interactions of thiophene with polycrystalline UO2

We have studied the adsorption and desorption of thiophene on polycrystalline UO₂ as function of coverage, over the temperature range 100-640 K, using X-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD) and electron stimulated desorption (ESD). Thiophene is found to adsorb molecularly on stoichiometric UO₂. C 1s and S 2p XPS spectra are measured at different thiophene exposures and at different temperatures; they show no evidence for the presence of dissociation fragments, confirming that thiophene adsorbs and desorbs molecularly on a polycrystalline stoichiometric UO₂ surface. The variation of the S 2p and C 1s intensity as function of exposure, together with ESD measurements of O⁺ as function of exposure, can be connected to the growth mode of a thiophene film on UO₂; the thiophene film converts from a flat-lying configuration to an inclined structure as coverage increases. The effects of X-rays, UV, and electron irradiation on thiophene films have been studied in two different coverage regimes, monolayer and multilayer. Irradiation leads to a modification of thiophene films, and appreciable concentrations of species stable to 640 K are present on the surface for both regimes. The XPS results suggest that irradiation induces polymerization and oligomerization, as well as formation of thiolates and dissociation fragments of thiophene. The adsorption and reactivity of thiophene on defective UO₂ surfaces have also been studied. The O vacancies and defects in the oxide surface cause cleavage of C-H and C-S bonds leading to the dissociation of thiophene at temperatures as low as 100 K. These results illustrate the important role played by O vacancies in the chemistry of thiophene over an oxide surface.     

Surface chemistry of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru on polycrystalline Ta

The adsorption and desorption of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru [DER] on polycrystalline Ta have been studied by X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). DER exposures to Ta at 140 K result in primarily molecular adsorption and desorption, while a minor surface reaction occurs at defect sites. Monolayer DER desorbs between 278 and 297 K with increasing coverage, exhibiting a first order, zero coverage desorption energy of 2.3 eV. Multilayer DER desorbs between 272 and 263 K, most likely with fractional order kinetics, and exhibits a zero coverage desorption energy of 0.9 eV. XPS Ru 3d binding energies increase with increasing coverage due to core hole screening in the monolayer regime and increasing sample charging as the DER overlayer becomes thicker in the multilayer regime. DER exhibits a three-dimensional (3D) “hit and stick” growth mode in which random 3D structures form due to the lack of adsorbate mobility at 140 K. DER exposures to Ta between 298 and 773 K result in minor decomposition resulting primarily in adsorbed hydrocarbon species on the surface. When the Ta is pre-covered with atomic iodine, DER dissociation is significantly decreased while adsorption is increased.     

Dimethyl methylphosphonate decomposition on fully oxidized and partially reduced ceria thin films

The thermal decomposition of dimethyl methylphosphonate (DMMP) on crystalline ceria thin films grown on Ru(0 0 0 1) was studied by temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS) and infrared absorption reflection spectroscopy (IRAS). TPD experiments show that methanol and formaldehyde desorb as the two main products at 575 K, while water, formaldehyde and CO are produced above 800 K. IRAS studies demonstrate that DMMP adsorbs via the phosphoryl oxygen at 200 K, but the PO bond converts to a bridging OPO species at 300 K. DMMP decomposition initially occurs via POCH₃ bond scission to form methyl methylphosphonate (MMP) and methyl phosphonate (MP) between 300 and 500 K; XPS and IRAS data are consistent with a methoxy intermediate on the surface at these temperatures. The more stable PCH₃ bonds remain intact up to 700 K, and the only surface intermediate at higher temperatures is believed to be PO_x. Although the presence of PO_x decreases activity for DMMP decomposition, some activity on the ceria surface remains even after 7 cycles of adsorption and reaction. The ceria films become reduced by multiple DMMP adsorption-reaction cycles, with the Ce⁺⁴ content dropping to 30% after seven cycles. Investigations of DMMP reaction on reduced ceria surfaces show that CO and H₂ are produced in addition to methanol and formaldehyde. Furthermore, DMMP decomposition activity on the reduced ceria films is almost completely inhibited after only 3 adsorption-reaction cycles. Similarities between DMMP and methanol chemistry on the ceria films suggest that methoxy is a key surface intermediate in both reactions.