ECR微波等离子体源离子输运的蒙特卡罗模拟

采用蒙特卡罗方法，模拟了ＥＣＲ微波等离子体源中离子离开放电室后历经中性区，鞘层区，最后被加负偏压的工件表面吸收的全过程。研究了鞘层外界处的衔接问题，得到了自洽电势分布和鞘层区不同位置处的速度分布，能量分布与角分布。同时，讨论了磁场对鞘势的影响。     

圆柱模型下电子回旋共振微波等离子体离子输运过程的数值研究

在圆柱模型下，采用Ｍｏｎｔｅ Ｃａｒｌｏ方法模拟了电子回旋共振（ＥＣＲ）微波等离子体源中离子离开放电室后历经中性区、鞘层区以及工件表面二次电子发射形成的虚拟阴极“屏蔽区”，最后被加负偏压的工件表面吸收的全过程．研究了鞘层边界处的衔接问题，得到了光滑自洽的电势分布曲线及工件表面离子的能量分布和角分布，同时讨论了磁场、气压以及二次电子发射对鞘势的影响． 关键词：     

衬底偏压对ECR等离子体鞘层和离子行为的影响

介绍了电子回旋共振微波放电等离子体中离子向衬底输运的蒙特卡罗模型,该模型考虑了精确依赖于离子能量的电荷交换和动量转移截面以及中性区与鞘层的衔接。     

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基于OOPIC软件,对平面直流磁控溅射放电等离子体进行了二维自洽粒子模拟,重点研究了磁场、阴极电势和气压等工作参数对磁控放电特性的影响。模拟发现,在一定的工作参数范围内,随着磁场的增强,鞘层厚度变窄,鞘层电势降减小,阴极离子密度增大,但是分布变窄;随着阴极电势的增加,鞘层厚度稍微变窄,鞘层电势降增大,阴极离子密度增大,分布变宽;随着气压的升高,鞘层厚度基本不变,鞘层电势降会增大,阴极离子密度先增大后减小,分布略微变宽。     

气体放电空心阴极鞘层氩离子的蒙特-卡罗模拟研究

建立了气体放电空心圆筒阴极鞘层离子的自洽蒙特-卡罗模拟模型,对鞘层区内离子的输运过程进行了研究。考虑了离子与中性原子的电荷交换碰撞和弹性散射,用到了精确依赖于离子能量的电荷交换和动量输运截面。模拟了氩离子在空心阴极鞘层中的运动,得到了不同放电条件下自洽电场分布,离子的能量分布,角分布以及电子密度分布和离子密度分布。计算结果表明:离子在由鞘层边界向阴极运动过程中,离子能量分布的高能部分逐渐增大,角分布向小角度部分压缩,鞘层中的强电场对离子起加速和聚焦作用;在鞘层内离子密度分布比较均匀,只是在鞘层边界附近变化 关键词：     

负离子对等离子体鞘层特性影响的数值研究

构造强电负性等离子体中平板电极处鞘层形成的模型,使用流体动力学方程组研究等离子体鞘层.得到空间电势、空间静电荷分布和鞘层宽度作为距离函数的数值结果.结果表明,强电负性鞘层中,在等离子体区和鞘层区之间几乎没有过渡的预鞘区,在靠近极板附近鞘层里的电子、负离子和正离子的分布形成一个纯正离子鞘区.在靠近鞘边附近,空间静电荷密度分布有一个很尖的峰.发现同电正性情形相比,强电负性鞘层的宽度要窄很多,空间电势下降得快得多.     

二次电子分布函数对绝缘壁面稳态鞘层特性的影响

由于缺乏详细的理论计算和实验结果,在研究绝缘壁面稳态流体鞘层特性时,通常假设壁面出射的总二次电子服从单能分布(0)、半Maxwellian分布等.在单能电子轰击壁面的详细二次电子发射模型基础上,采用Monte Carlo方法统计发现:当入射电子服从Maxwellian分布时,绝缘壁面发射的总二次电子服从三温Maxwellian分布.进而,采用一维稳态流体鞘层模型进行对比研究,结果表明:二次电子分布函数对鞘边离子能量、壁面电势、电势及电子/离子密度分布等均具有明显影响;总二次电子服从三温Maxwellian分布时,临界空间电荷饱和鞘层无解,表明随着壁面总二次电子发射系数的增加,鞘层直接从经典鞘层结构过渡到反鞘层结构.     

半圆形容器等离子体源离子注入过程中离子动力学的两维PIC计算机模拟

利用两维particle-in-cell方法研究了半圆形容器表面等离子体源离子注入过程中鞘层的时空演化规律. 详尽考察了鞘层内随时间变化的电势分布和离子密度分布规律,离子在鞘层中的运动轨迹和运动状态,得到了半圆容器内、外表面和边缘平面上各点离子注入剂量分布规律,获得了工件表面各点注入离子的入射角分布规律. 研究结果揭示了半圆容器边缘附近鞘层中离子聚焦现象,以及离子聚焦现象导致工件表面注入剂量分布和注入角度分布存在很大不均匀的基本物理规律. 关键词： 等离子体源离子注入 鞘层 两维particle-in-cell方法 离子运动轨迹     

气体放电阴极鞘层氩离子的自洽蒙特卡罗模拟

建立了气体放电阴极鞘层离子的自洽蒙特卡罗模拟模型,考虑了离子与中性原子的电荷交换碰撞和弹性散射,用到了精确依赖于离子能量的电荷交换和动量输运截面。模拟了氩离子在阴极鞘层中的运动,得到了不同气压下自治电场分布,离子的能量分布和角分布,发现:离子由鞘层边界向阴极运动过程中,离子能量分布的高能部分逐渐增大,角分布向小角度部分压缩,鞘层中的强电场加速和聚焦了离子;在鞘层边界附近的电场呈非线性。     

磁场中等离子体鞘层的结构

采用流体力学理论，研究了斜磁场作用下的等离子体鞘层结构.在不同大小及方向的磁场作用下，对鞘层的离子，电子密度分布，离子流速度分布，电势分布和Bohm判据进行了讨 论.结果显示磁场对鞘层的结构有明显的影响.在静电力和洛仑兹力的作用下，离子流作螺旋进动，离子密度分布产生振荡. 关键词： 磁鞘 等离子体 磁场     

Effects of the Chodura sheath on tungsten ionization and emission in tokamak divertors

The decay of the electric potential in the sheath region in tokamak divertors occurs on a scale length on the order of the main ion gyroradius (Chodura sheath) due to magnetic fields lines intersecting the divertor plates at grazing incidence. As a consequence, high-Z impurities like tungsten ionize within the sheath region in attached plasma conditions. The modification of the electron distribution in the sheath region must thus be taken into account to accurately model ionization and emission of impurities within the sheath region. To that end, an analytical expression of the distribution of the vertical ionization path for impurities sputtered from divertor plasma-facing components is derived. This expression is then used to estimate the fraction of neutral impurities ionizing within the sheath and the average vertical ionization path, and to derive an effective SXB (the number of ionizations per emitted photon) coefficient which includes the effects of the variation of the electron distribution in the sheath region. These results are applied to tungsten impurities sputtered from divertor plates. It is shown that the SXB coefficient for neutral tungsten is significantly reduced in high-density attached divertor plasma conditions (n_e ≳ 5 × 10¹³ cm⁻³) because of the ionization of neutral tungsten well within the sheath region.     

Distribution functions of positive ions and electrons in a plasmanear a surface

In this study, the velocity distribution functions of the ions and electrons in a collisional presheath and collisionless sheath of a plasma near a wall emitting and reflecting ions and electrons are systematically determined. The collisions in the presheath are modeled by a relaxation time approximation (namely, Bhatnagar-Gross-Krook model, or simply BGK model). To find the variation in electrostatic potential with position, the model and analysis from Emmert et al. (1980), are used. Distribution functions of the ions and electrons in a collisionless presheath and sheath on a wall partially reflecting ions and electrons, therefore, can be exactly obtained. The reflections of the ions and electrons by a wall play important roles in studying heat transfer from a plasma sheath to a workpiece surface, and sputter etching and deposition, ion implantation, and ion scattering spectroscopy. Irrespective of ion and electron reflectivities, velocities of the ions in the presheath and sheath are of highly non-Maxwell-Boltzmann distributions. The electrons in the presheath are close to Maxwell-Boltzmann distributions, whereas those in the sheath are non-Maxwell-Boltzmann distributions. Even though the wall partially reflects ions and electrons, the Bohm's criterion is marginally satisfied at the sheath edge. The computed distribution functions for a completely absorbing surface agree with theoretical results provided in the literature. Good comparison of the resulted transport variables with available analytical work is presented in the companion paper     

Effect of Cathode and Anode Voltage on an Ion Sheath Thickness in a Magnetically Confined Diffusion Plasma

This article reports about the ion sheath thickness variation occurring in front of a negatively biased plate immersed in the target plasma region of a double plasma device. The target plasma is produced due to the local ionization of neutral gas by the high energetic electrons coming from the source region (main discharge region). It is observed that for an increase in cathode voltage (filament bias voltage) in the source region, the ion flux into the plate increases. As a result, the sheath at the plate contracts. Again, for an increase in source anode voltage (magnetic cage bias), the ion flux to the plate decreases. As a result, the sheath expands at the plate. The ion sheath formed at the separation grid of the device is found to expand for an increase in cathode voltage and it contracts for an increase in the anode voltage of the main discharge region. One important observation is that the applied anode bias can control the Bohm speed of the ions towards the separation grid. Furthermore, it is observed that the ion current collected by the separation grid is independent of changes in plasma density in the diffusion region but is highly dependent on the source plasma parameters. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

在等离子体源离子注入中靶周围等离子体的行为

在等离子体源离子注入中，将待处理的工件直接放在等离子体内，并在工件上按一定的占空比加脉冲连续式负偏压，我们通过计算，分析了在工件未加负偏压时等离子体对工件的作用，并给出了在工件加上负偏压时注入工件的离子能量的简化分布模型，最后计算了在负偏压脉冲持续时间内离子阵鞘层边界的扩展。     

Laser carbonitriding of alumina surface

Laser carbonitriding of alumina surfaces is examined. Temperature and stress fields developed during the laser heating of the substrate surface are predicted using the finite element method in line with the experimental conditions. The formation of Al(C, N) and AlN compounds in the surface region of irradiated workpiece is examined using X-ray Photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The microstructural and morphological changes in the laser irradiated region are examined using Scanning Electron Microscope (SEM). The microhardness of the resulting surface is measured and compared with the base material hardness. It is found that high temperature gradient is developed in the irradiated region, which in turn, results in high residual stress levels in this region. XPS and XRD data reveal the presence of Al (C, N) and AlN compounds in the surface region. The microhardness in the surface region of the laser treated workpiece increases significantly.     

Experimental studies of plasma sheath near meshes of different transmissivity

<正>The measurements of the potential distributions in the boundary layer near meshes with different mesh spacing were conducted in weakly collisional plasmas using a fine-structured emissive probe and the results of the sheath thickness and electric field at the sheath-presheath edge were compared with theoretical models of collisional presheath and collisionless sheath.It was shown that,because the meshes are partially transparent to ions,the sheath is thinner and the electric field is stronger for the mesh of higher transmissivity,owing to the increased ion density in the sheath contributed from the ions transmitted from the other side of the mesh.However,the potential profiles in the presheath remain almost the same for different meshes except for the shift of the sheath-presheath edge.The thickness of the sheath decreases while the electric field at the edge increases with the increase of the neutral gas pressure.Furthermore, depending on the pressure,the measured electric fields at the edge are close to that from the models of a transition region.     

Molecular dynamics simulation of processing using AFM pin tool

A three-dimensional molecular dynamics (MD) model is utilized to investigate the effect of tool geometry on the deformation process of the workpiece and the nature of deformation process at the atomic-scale. Results show that different states exist between the atomic force microscope (AFM) pin tool and the workpiece surface, i.e. the non-wear state, the ploughing state, the state in which ploughing is dominant and the state in which cutting plays a key role. A relationship between the deformation process of the workpiece and the potential energy variation is presented. The potential energy variation of atoms in different deformed regions in the workpiece such as plastically deformed region, elastically deformed region and the mixed deformation region is different. The features of variations of potential energy are discussed.     

基于压力补偿原理的抛光面形快速收敛技术

为解决强激光系统中大口径光学元件抛光面形精度收敛困难的问题,提出了一种基于压力补偿原理的抛光面形快速收敛技术。利用独特的抛光垫修整技术,将抛光垫表面修整成特定形状,使工件与抛光垫的接触面产生不均匀的压力分布,并结合精确的抛光转速控制,以加快工件面形精度的收敛速度。实验结果表明,将抛光垫修整成微凸面形,可以有效避免抛光中元件过早塌边问题,能将大口径平面元件的初抛时间从数天缩短到6 h以内,元件面形精度提高到1个波长左右。