类锂硅离子X射线激光谱线宽度和电子密度的空间分布

通过分析类锂硅离子X射线激光谱线宽度的空间分布特性,表明斯塔克展宽是主要的展宽机制;由此得到增益介质电子密度的空间分布显示增益区电子密度约在10¹⁹/cm³左右,对应最大增益处的线宽为0.21?,电子密度为2.9×10¹⁹/cm³。 关键词：     

狭窄波束型高频引力辐射与电磁场的作用效应

从弱引力场的Einstein-Maxwell方程出发,讨论了晶体空间阵列的狭窄波束型高频引力辐射与电磁场的作用效应,并给出了扰动解。计算表明,在TT(Transvese Traceless)坐标系中,最优辐射方向的引力波束是纯十型极化的,并可使同频的电磁波产生倍频的扰动效应,使静态电磁场产生与时间成线性关系的累积扰动效应。对于任意方向上的引力辐射波束,在垂直于引力波矢的平面内仍然是纯十型极化的。在高频辐射和实验室典型尺度条件下,TT坐标系与Fermi坐标系的差异是可以忽略的。 关键词：     

引力场的能量动量赝张量与轴对称体系的引力辐射

本文计算了轴对称体系的引力辐射总功率。用胡宁的τ^(n)αβ表达式和Bondi的柱面波解直接计算导出-(dE)/(dt)=1/2∫^x₀c₀²sinθdθ。这个结果与Bondi不用任何τ^αβ表达式得到的公式完全相同,并证明辐射总功率是恒正的。但是,由郑玉昆的τ^αβ表达式得到的结果与Bondi的公式不一致,并表明辐射总功率不是恒正的。 关键词：     

Nd3+螯合物的含氢有机溶液光谱性能研究

研究了Nd(TTA)₃螯合物溶于二甲基甲酰胺溶剂的光谱性质，溶液中所有氢未置换为氘.测量了这种溶液体系的吸收谱、荧光谱和荧光寿命.在898和1058 nm波长处观察到明显的Nd³⁺荧光特征峰.用Judd-Ofelt理论对吸收谱进行分析计算，得到了三个强度参数Ω_t(t=2,4,6)分别为Ω₂=4.9×10^-20 cm², Ω₄=5.1×10^-20 cm²和Ω₆=2.5×10^-20 cm².利用强度参数计算了⁴F_3/2能级与⁴I_9/2和⁴I_11/2之间的跃迁强度S_ed、自发辐射系数A_ed以及荧光分支比β等，估算了⁴F_3/2能级的辐射跃迁寿命τ_r＝682 μs.实测1058和898 nm波长处荧光寿命τ大约为460和505 μs，因此荧光量子效率分别高达0.67和0.74.荧光量子效率高表明Nd³⁺在这种溶液中无辐射跃迁比较弱；强度参数Ω₂比较大，表明Nd³⁺在溶液中具有不对称配位场环境，不对称的配位场环境可大大促进Nd³⁺吸收激发能量.光谱质量因子Ω₄/Ω₆>1，使得898 nm的辐射强于1058 nm的辐射. 关键词： Nd 有机溶液 光谱性能 Judd-Ofelt理论     

激光烧蚀Al靶产生的等离子体中辐射粒子的速度及激波

在低真空条件下(5Pa),通过测量脉冲激光烧蚀平面Al靶产生的等离子体辐射谱的时间分辨特征,得到辐射粒子速度的空间分布.在激光脉冲宽度为10ns,烧蚀斑直径为200μm,靶面上功率密度分别为1.91×10¹⁰,5.10×10¹⁰和7.64×10¹⁰W/cm²时,测得辐射粒子Al的速度均在10⁶cm/s量级,且随着靶面径向距离的增大而近似呈指数衰减.在距靶面的相同距离处,激光功率密度的增大反而使速度减小.利用激波模型(shockwave model)较好地解释了实验结果,并得出激波的波面基本为柱对称 关键词： 激光等离子体 平面Al靶 粒子速度分布 激波     

原子非序列双电离的多次返回碰撞电离机理分析

本文采用三维半经典再散射模型研究了He原子在高光强(1.5×10¹⁵ W/cm²)、少周波激光脉冲作用下的非序列双电离问题,重点分析了沿激光电场极化方向的动量关联谱.发现两个电子沿相反方向发射的比例明显比中等光强区(7×10¹⁴ W/cm²)和低光强区(2.5×10¹⁴ W/cm²),以及同等光强的长脉冲情形都偏高, 同时V形结构也更加明显.通过轨道"回溯"分析, 进一步深入 关键词： 强场 非序列双电离 再散射     

Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究

本文采用γ射线、高能电子和中子对Ti/4H-SiC肖特基势垒二极管(SBD)的抗辐射特性进行了研究.研究发现对于γ射线和1 MeV电子辐照,-30 V辐照偏压对器件的辐照效应没有明显的影响.经过1 Mrad(Si)的γ射线或者1×l0¹³ n/cm²的中子辐照后,Ti/4H-SiC肖特基接触都没有明显退化;经过3.43×10¹⁴ e/cm²的1 MeV电子辐照后Ti/4H-SiC的势垒高度比辐照前轻微下降,这是由于高能 关键词： 碳化硅 肖特基 辐照 偏压     

部分电离金属钛和银等离子体输运性质的计算

金属等离子体的组分为计算热力学、光学和辐射输运特性研究提供了基本的输入参数.为获得此参数,本文用部分电离等离子体模型,在考虑金属发生三次电离,以及电子与中性粒子的极化作用、离子与离子之间、电子与离子之间、电子与电子之间库仑相互作用下,计算得到了等离子体组分,进而用线性响应理论计算了金属钛和银的电导率.并与已有的实验数据进行了比较,验证了模型的可靠性.在此基础上进一步预测了密度在0.001—2.0 g/cm³、温度在1.5×10⁴—2.5×10^{4关键词： 等离子体 线性响应理论 电离度 输运系数}     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

冲击波在铝靶中传播的数值模拟研究

利用一维辐射流体力学数值模拟程序对激光驱动的冲击波在平面铝靶中传播的实验结果进行了模拟研究.分析了空间单元层的厚度对模拟结果的影响,给出了最佳单元层厚度.通过将数值模拟与实验结果相比较给出了实验中两种激光光强的实际的吸收系数.结果显示,波长为1.053μm,强度分别为0.81×10¹⁴和1.65×10¹⁴W/cm²的激光驱动的冲击波在铝靶中传播速度分别为16.52,18.56μm/ns,冲击波的峰值压力分别为0.386和0.537TPa,这些模拟结果与实验结果是一致的 关键词： 冲击波 辐射流体力学 激光等离子体     

Regimes of laser plasma expansion at optical breakdown in the normal atmosphere

Propagation regimes of a plasma (fast ionization wave, laser-supported radiation wave, and laser-supported detonation wave) generated by laser radiation in a wide range of intensities (5 × 10⁸?10¹¹ W/cm² ) are described. The regimes were analyzed on the basis of the calculated dependence of the propagation velocity on the laser radiation intensity. The lower bound of the velocity was used for the fast ionization wave. Calculation results agree with experimental data and show that the plasma propagates as a fast ionization wave in the above range of intensities.     

Targeted destruction of murine macrophage cells with bioconjugated gold nanorods

Gold nanorods manifest a readily tunable longitudinal plasmon resonance with light and consequently have potential for use in photothermal therapeutics. Recent work by others has shown how gold nanoshells and rods can be used to target cancer cells, which can then be destroyed using relatively high power laser radiation (∼1×10⁵ to 1×10¹⁰ W/m²). Here we extend this concept to demonstrate how gold nanorods can be modified to bind to target macrophage cells, and show that high intensity laser radiation is not necessary, with even 5×10² W/m² being sufficient, provided that a total fluence of ∼30 J/cm² is delivered. We used the murine cell line RAW 264.7 and the monoclonal antibody CD11b, raised against murine macrophages, as our model system and a 5 mW solid state diode laser as our energy source. Exposure of the cells labeled with gold nanorods to a laser fluence of 30 J/cm² resulted in 81% cell death compared to only 0.9% in the control, non-labeled cells.     

Physical constants as cosmological constraints

A solution to the primary “missing mass” problem is found in the context of accounting for the coincidence of large dimensionless numbers first noticed by Weyl, Eddington, and Dirac. This solution entails (1) a log₂ relation between the electromagnetic and gravitational coupling constants; (2) setting the maximum radius of curvature at the gravitational radius, 2GM/c ²; (3) a changing gravitational parameterG, which varies as an inverse function of the universal radius of curvature. These features motivate the development of a neo-Friedmann formalism, which employs a function,ε(χ). governing the change from Euclidian to non-Euclidian volumes. Observational consequences include (1) a universal density of 7.6×10^?31g cm^?3, (2) a Hubble parameter of 15 km s^?1 Mpc^?1, (3) an age of the universe of 32×10⁹ yr, (4) a gravitational parameter diminishing at a current rate of 2.2×10^?12 yr^?1, and (5) a deceleration parameter of 1.93. Moreover, it is shown that for a Friedmann-type (λ=0) cosmology (whether open or closed) any deceleration parameter will be represented by a straight line in the (log-log) red shift: luminosity-distance space of the Hubble diagram. The major claim of this paper is that we have devised a model in which the large-scale structure of the universe is completely determined by the values of the fundamental physical constants:c, h, e, andm _e setting the scale, andG selecting the epoch.     

Double-line terawatt OPCPA laser system for exciting beat wave oscillations

A double-line terawatt beat laser (BEAT) is developed for exciting beat wave oscillations. BEAT consists of two oscillators and an amplification system including optical parametric chirped-pulse amplification (OPCPA) in which two individual pulses with wavelength separations of 10–35 nm are amplified, recompressed, and focused as a single beam. The recompressed pulse trace shows that a 150-fs pulse duration full width at half maximum was modulated at a beating period of 72 fs. This beating period matches a resonant excitation of plasma wave with an electron density of 2.5 × 10¹⁸ cm^?3, resulting in excitation of a beat wave in hydrogen plasma with wave amplitude of 15 GV/m. The multiple beating oscillations can amplify the plasma wave and improve its structure. This scheme would be ideal for stabilizing the plasma wave strength in the plasma cavity and for realizing a practical laser plasma accelerator.     

红外激光对可见光CCD成像系统的干扰

采用连续波红外激光对可见光面阵CCD成像系统进行了干扰实验,观察到饱和串扰、全屏饱和等干扰现象,并测到串扰阈值小于2.0×102W/cm2,全屏饱和阈值为1.2×104W/cm2。通过分析CCD输出电压、视频信号,提出基于有效干扰面积的干扰效果评估方法,并利用该方法对干扰面积与激光功率密度、辐照时间之间的关系进行了半定量分析。结果显示:激光功率密度对干扰效果的影响较大,而辐照时间在0.5~2.0 s之间时,辐照时间对CCD干扰效果的影响不明显。     

Annealing of arsenic-and antimony-implanted silicon single crystals using A CW xenon arc lamp

Abstract

Continuous, incoherent light from a xenon arc lamp has been used to anneal radiation damage in <100> silicon single crystals produced by implantation of 30?keV arsenic or antimony ions to doses between 1×10¹⁵ cm^?2 and 1×10¹⁶ cm^?2. The recrystallized layers have been characterized by Rutherford-backscattering spectroscopy, ion-channeling, Transmission Electron Microscopy, and sheet-resistivity measurements.     

Leed,aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

Epitaxially grown GaAs(001), (111) and (1?1?1?) surfaces and their behaviour on Cs adsorption are studied by LEED, AES and photoemission. Upon heat treatment the clean GaAs(001) surface shows all the structures of the As-stabilized to the Ga-stabilized surface. By careful annealing it is also possible to obtain the As-stabilized surface from the Ga-stabilized surface, which must be due to the diffusion of As from the bulk to the surface. The As-stabilized surface can be recovered from the Ga-stabilized surface by treating the surface at 400°C in an AsH₃ atmosphere. The Cs coverage of all these surfaces is linear with the dosage and shows a sharp breakpoint at 5.3 × 10¹⁴ atoms cm^?2. The photoemission reaches a maximum precisely at the dosage of this break point for the GaAs(001) and GaAs(1?1?1?) surface, whereas for the GaAs(111) surface the maximum in the photoemission is reached at a higher dosage of 6.5 × 10¹⁴ atoms cm^?2. The maximum photoemission from all surfaces is in the order of 50μA Im^?1 for white light (T = 2850 K). LEED measurements show that Cs adsorbs as an amorphous layer on these surfaces at room temperature. Heat treatment of the Cs-activated GaAs (001) surface shows a stability region of 4.7 × 10¹⁴ atoms cm^?2 at 260dgC and one of 2.7 × 10¹⁴ atoms cm^?2 at 340°C without any ordering of the Cs atoms. Heat treatment of the Cs-activated GaAs(111) crystal shows a gradual desorption of Cs up to a coverage of 1 × 10¹⁴ atoms cm^?2, which is stable at 360°C and where LEED shows the formation of the GaAs(111) (√7 × √7)Cs structure. Heat treatment of the Cs-activated GaAs(1?1?1?) crystal shows a stability region at 260°C with a coverage of 3.8 × 10¹⁴ atoms cm^?2 with ordering of the Cs atoms in a GaAs(1?1?1?) (4 × 4)Cs structure and at 340°C a further stability region with a coverage of 1 × 10¹⁴ at cm^?2 with the formation of a GaAs(1?1?1?) (√21 × √21)Cs structure. Possible models of the GaAs(1?1?1?) (4 × 4)Cs, GaAs(1?1?1?)(√21 × √21)Cs and GaAs(111) (√7 × √7)Cs structures are given.     

Radiation effects in silicon solar cells

Silicon solar cells have been utilized as the principal source of electrical energy for space satellites during the past decade. Despite the reliability of these photovoltaic devices, degradation of their power output by charged particle radiation in the earth's geomagnetic field has continued to be the primary problem for their use on flights of long-duration. A study of radiation damage induced by 1 MeV electrons in a variety of current silicon solar cell types has been conducted as a function of dopant impurity and resistivity of the base region. A companion study of radiation damage induced by nominal 0.2 MeV protons was performed in solar cells with coverslips having small cell areas exposed alongside the coverslip. The photovoltaic current-voltage characteristics were measured under a solar simulator emitting 140mW/cm² at air mass zero. Irradiations were performed at room temperature to fluences of 1 × 10¹⁵ e/cm² and 1 × 10¹⁵ p/cm². The efficiency of 10 ohm-cm cells after large fluences was superior to cells of 2 ohm-cm base resistivity. No significant differences were observed between boron- and aluminum-doped cells. Solar cell exposure to low energy Protons resulted in an 8 per cent loss in power at a fluence of 1 × 10¹⁴ p/cm² when as little as 2 per cent of the solar cell surface was left unshielded.     

Y2BaCuO5粒子掺杂的单畴熔融织构YBCO超导体工艺与性能研究

采用人工掺杂Y-211相的方法以及熔融织构生长结合顶部籽晶工艺制备了不同211粒子含量的 准单畴熔融织构的YBCO块材料,样品致密度高,体密度大于62g/cm³,机械强 度好,振动样品磁强计测量结果表明,样品在温度30K、磁场06T下,其J_c仍 达到123×10⁶A/cm².在温度70K、磁场2T条件下,J_c 仍高达135×10⁴A/cm²,而且临界电流密度对磁场不敏感.扫描电 子显微镜分析也表明,Y-211相的人工掺杂,能改善织构样品的生长状况,减小微裂纹,同 时,掺杂的Y-211粒子能作为强的钉扎中心,因此,这种工艺能精确地控制样品中Y-211粒子 的含量,所制备的样品中Y-211粒子分布越均匀,尺寸越小,其钉扎效果越好.从大量实验结 果比较得出,1∶05是最佳的掺杂比例. 关键词： 准单畴超导体 熔融织构 c')" href="#">临界电流密度J_{c 磁通钉扎中心}