Enhancement of optical conductivity in the ultra-violet region of Cs doped ZnO sol gel thin films

Nano crystalline cesium (Cs) doped ZnO thin films were deposited on glass substrate by sol gel spin coating method with 1–3 mol.% doping concentration and different annealing temperatures. The deposited films were characterized by X-ray diffraction (XRD), Hall Effect, Photoluminescence (PL) and UV–Visible studies. XRD measurements reveal that all the samples abound in the wurtzite structure with polycrystalline nature. An increase in crystalline size from 19.60 to 44.54 nm is observed with the increase of doping concentration. Electrical conductivity of Cs doped ZnO films were observed from Hall effect measurements and the maximum carrier concentration obtained is 7.35 × 10¹⁸ cm^?3. The near band emission (384 nm) peak intensity increases with the increase of Cs doping concentration and a maximum intensity 55,280 was observed for CZ3 film from PL spectrum. Also a low energy near infrared (NIR) emission peak centered at 1.62 eV appears for the Cs doped ZnO films. The average transmission of CZ film is 88 % and the absorption edge is red shifted with the increase of Cs doping concentration and also the optical conductivity increases in the UV region.     

Electrical properties of ion-implanted poly(p-phenylene sulfide)

Ion implantation of impurities into thin films of poly(p-phenylene sulfide) (PPS) is found to increase the conductivity of the material by up to 12 orders of magnitude. The increase is stable under exposure to ambient conditions, in contrast to the instability of the conductivity increases in PPS produced by chemical doping with AsF₅. PPS films 0.1–0.2 μm thick are spin cast from solution onto interdigitated electrodes patterned on an oxidized silicon substrate. The room-temperature interelectrode resistance is measured as a function of implantation fluence. An estimate of film conductivity is obtained from this resistance with a simple model for the electrode and film geometry. A first experiment yielded similar conductivity increases for implantation of either arsenic or krypton. At a fluence of 1 × 10¹⁶cm^?;2, which corresponds to an average impurity concentration of 2.5 × 10²¹cm^?3, the conductivity reaches an apparently saturated value of 1.5 × 10^?5 (Ω cm)^?1. Infrared spectra of the films before and after implantation suggest that crosslinking may be present in the implanted films, and Auger studies show stoichiometric changes throughout the implanted layer. These results suggest that the observed conductivity changes are the result of molecular rearrangements produced by the implantation rather than the result of specific chemical doping. Specific chemical doping may, however, explain the results of a second experiment in which implantation of bromine resulted in substantially larger conductivities found to increase at an approximate linear rate from a value of 1.0 × 10^?4 (Ω cm)^?1 at a fluence of 1 × 10¹⁶ cm^?2 to a value of 4.0 × 10^?4 (Ω cm)^?1 at a fluence of 3.16 × 10¹⁶ cm^?2.     

Electrical conductivity of hexacene doped with iodine

Hexacene (HEX) and derivatives such as dihydrohexacene and dihydroxyhexcane quinone were synthesized and thin films of them were prepared by the sublimation method. The structure and conductivity of the films both before and after doping with iodine were studied. The doped HEX film showed the conductivity of 3 × 10^?2 S/cm at room temperature, which was lower than expected since the conductivity of highly ordered pentacene was above 100 Ω^?1 cm^?1. The reason for the low conductivity was considered to be the disorder in molecular alignment since the HEX film showed an amorphous structure. A reversible change in the conductivity of the HEX film was observed in air and in vacuum.     

Synthesis of poly(o‐phenylenediamine) nanofiber with novel structure and properties

The poly(o‐phenylenediamine) (PoPD) was synthesized from the monomer o‐phenylenediamine in various organic solvent medium viz. dimethyl sulfoxide (DMSO), N,N‐dimethyl formamide (DMF) and methanol using ammonium per sulfate as a radical initiator. The structure just like polyaniline derivative with free ?NH functional groups of the synthesized polymers confirmed by various standard characterizations was explained from the proposed polymerization mechanism. All the synthesized polymers were completely soluble in common organic solvent like DMSO and DMF because of the presence of polar free ?NH functional groups in its structure. The formation of polymer nanofiber by reverse salting‐out process was confirmed, and the synthesized polymer in DMSO medium was the best polymer in terms of nano‐morphology as well as conducting properties. Interestingly, the average DC conductivity of undoped polymer film was recorded as 2.21 × 10^?6 Scm^?1 because of induced doping through self charge separation. Moreover, the conductivity of the polymer film was further increased to 1.16 × 10^?3 Scm^?1 after doping by sulfuric acid. Copyright © 2016 John Wiley & Sons, Ltd.     

Conductive triethylene glycol monomethyl ether substituted polythiophenes with high stability in the doped state

Synthesis of two conducting polymers containing 3‐hexylthiophene and 3‐[2‐(2‐(2‐methoxyethoxy)ethoxy)ethoxy]thiophene is demonstrated. In thin‐film transistors, the high‐molecular‐weight polymer shows an average mobility of 4.2 × 10^?4 cm² V^?1 s^?1. Most importantly, the polymers have high conductivity upon doping with iodine and also have high stability in the doped state with high conductivities measured even after 1 month. Furthermore, the doping causes transparency to thin films of the polymer and the films are resistant to common organic solvents. All these properties indicate a great potential for the iodine‐doped polymer to be used as an alternative to commercially available poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate). © 2019 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2019 , 57, 1079–1086     

High thermal conductivity of polymerizable liquid‐crystal acrylic film having a twisted molecular orientation

The aligned films, the homogeneous film, the 90°‐twisted film and the 180°‐twisted film, have been prepared by immobilizing the polymerizable liquid crystals under the UV irradiation. The relation between the thermal conductivity and the aligned molecular direction of the films was investigated. It is indicated that the additional thermal transmission effect, which the increase of the thermal conductivity may be induced, would exist in the twisted films. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1419–1425, 2006     

Preparation and characterization of a conductive polyaniline/polysulfone film and evaluation of the effect of co-solvent

A novel conductive dense membrane composed of polyaniline (PANI) and polysulfone (PSU) was prepared. To improve the solubility of PANI in N-methyl pyrrolidone (NMP) and consequently increase the conductivity of the eventual film, a tertiary amine (1,3-dimethyl-2-imidazolidinone, DMI) was added to the solvent as a co-solvent. Different PANI solution concentrations in NMP/DMI were used to make blend films via solution blending with PSU solution in NMP in different ratio’s of PANI/PSU. The effect of the PSU fraction on the properties of the membrane has been investigated. The electrical conductivity, doping degree, crystallinity, miscibility of the polymers and shape stability were investigated. It was observed that an increase in the PSU fraction causes a decrease in the conductivity as well as less film deformation after doping. The conductivity and shape stability of the blend film were optimized by a change in PANI concentration in the casting solution and a change in the PSU fraction. The best conductivity was achieved using 3% PANI solution in NMP/DMI and the minimum percentage of PSU, allowing good shape stability after doping, was found to be 40%.     

Control of bending electrostriction in polyurethane films by doping with salt

We systematically investigated the effect of doping with salt on the bending electrostriction in polyurethane films. When a film was doped with sodium acetate, it was bent toward the cathode side by the application of an electric field. However, when a film was doped with zinc bromide, it was bent toward the anode side. Thus, we found a way of controlling the bending direction. We also investigated the mechanism of the effect of the doping. Doping is believed to be a treatment that can control the bending deformation through modification of the charge injection, the major origin of the deformation. © 2001 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 39: 1061–1069, 2001     

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced (Au‐) crystallization of amorphous germanium (α‐Ge) thin films was investigated by depositing Ge on aluminum‐doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X‐ray diffraction, and scanning electron microscopy. The Raman and X‐ray diffraction results indicated that the Au‐induced crystallization of the Ge films yielded crystallization at temperature as low as 300°C for 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current‐voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm⁻¹ for annealed samples grown on aluminum‐doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge‐based electronic and photovoltaic applications.     

Preparation and optical–electrical properties of Al-doped ZnO films

Among the various semiconducting metal oxide materials, ZnO thin films are highly attractive in the development of materials area. In this paper, Al-doped ZnO thin films were prepared by sol–gel dipping and drawing technology and their composition, structure and optical–electrical properties were investigated. XRD results shows that the Al-doped ZnO thin film is of polycrystalline hexagonal wurtzite structure, and the (002) face of the thin film has the strongest orientation at the annealing temperature of 550 °C. The surface resistance of Al-doped ZnO thin film firstly drops and then increases with the increase in annealing temperature. Al doping concentration is also an important factor for improving the conductivity of modified ZnO thin films, and the surface resistance has the tendency to drop at first and then to increase when the Al concentration is increasing. The surface resistance of modified ZnO thin films drops to the lowest point of 139 KΩ sq^?1 when the Al concentration is 1.6 at% and the annealing temperature is 500 °C. The light transmission measurements show that the doping concentration has little influence on light transmittance. The transmittance at the visible region of films is all over 80 %, and the highest value is up to 91 %.     

In-situ Apparent Mobility of Charge Carriers in Polyaniline Films Measured with a New Four-band Electrode

The in‐situ apparent mobility in polyaniline films was accurately measured in a wide doping region using a new four‐band electrode. It was found the apparent mobility in polyaniline films rises with increasing the doping level or carrier density. The influence of film thickness on the conductivity and apparent mobility of charge carriers was also investigated. The relative higher conductivity observed in a thinner film under low and intermediate doping potentials is assigned to the higher inter‐chain mobility related to the more ordered structure of the film. The mobility variations provide experimental evidence to confirm the inter‐chain path for hopping transport of polarons and the intra‐chain path for evolution of metallic conduction.     

Efficient hole transport material formed by atmospheric pressure plasma functionalization of Spiro-OMeTAD

A technique to increase the conductivity of Spiro-OMeTAD using an easily scalable, non-thermal atmospheric pressure plasma jet (APPJ) is reported. An investigation of plasma functionalization demonstrated an enhancement in hole conductivity by over an order of magnitude from 9.4 × 10^?7 S cm^?1 for the pristine film to 1.15 × 10^?5 S cm^?1 for films after 5 minutes of plasma treatment. The conductivity value after plasma functionalization was comparable to that reported for 10–25% Li-TFSI-doped Spiro-OMeTAD. The increase in conductivity was correlated with a reduction in phase value observed using electrostatic force microscopy. Kelvin probe force microscopy showed an increase in work function after plasma exposure corresponding to the p-type nature of the doping. X-ray photoelectron spectroscopy revealed surface oxidation of plasma-functionalized films, as well as variation in nitrogen chemistry, with the formation of a higher binding energy quaternary nitrogen tail. Oxidation of Spiro-OMeTAD was also confirmed by the appearance of the 500 nm absorption peak using UV–vis spectroscopy. The synergistic contribution of increase in charge density in Spiro-OMeTAD due to the energetic species in the plasma jet coupled with improvement in π-π stacking of the molecules is thought to underlie the conductivity enhancement. The enhancement in positive charges can also be attributed to the formation of quinoid structures with quaternary nitrogen +N=C formed due to loss of methyl groups during plasma surface interaction. This work opens up the possibility of using an atmospheric pressure plasma jet as a simple and effective technique for doping and functionalizing Spiro-OMeTAD thin films to circumvent the detrimental issues associated with chemical dopants.     

Temperature,humidity, and dimension dependence of the bending motion of ionomer‐based polymer actuators

This paper focuses on the effects of temperature, humidity, and dimensions on the displacement of ionomer‐based polymer actuators. The amount of displacement and velocities of the actuation strongly increased with increasing humidity and temperature. We attributed this behavior to a change in the Young's modulus (the stiffness) and ion conductivity based on water uptake. To evaluate the dependence of the velocity of the displacement on humidity and temperature, we examined three velocities (i.e. the initial, bending, and backtracking velocities). The observed increase in the bending velocity at higher relative humidity (RH) levels arises from an increase in the water uptake, which enhances ion conductivity and decreases the film stiffness. The ratio of the bending velocity to the backtracking velocity at higher RH decreased because of a drastic increase of the backtracking velocity at higher RH. This result would be explained by an increase in the ion conductivity accompanying a decrease in the stiffness. Furthermore, we compared the difference in the amount of displacement of the actuator using actuators of two widths (2 and 10 mm) at 30, 60, and 90% RH and at 25 °C. The difference in the width of the actuator did not completely affect the displacement. These results are reasonably explained by considering the amount of mobile ions per unit volume of the films of the actuators. Copyright © 2016 John Wiley & Sons, Ltd.     

Doping of processable conducting poly(m‐aminophenol) with silver nanoparticles

Processable poly(m‐aminophenol) (PmAP) was synthesized using ammonium persulfate (APS) oxidant in 0.6 M sodium hydroxide solution at room temperature. Soluble silver hydroxide ammonium complex was formed by dissolving silver nitrate in excess liquor ammonia and the thermal decomposition of this complex easily produced silver nanoparticle. Then, in situ silver nanoparticle‐doped PmAP film was obtained by casting PmAP film from dimethyl sulfoxide (DMSO) with silver hydroxide ammonia complex mixture at 140°C. The nanocomposite was characterized by ultraviolet‐visible spectroscopy, Fourier transformed spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy, electron dispersion spectroscopy, thermogravimetric analysis, and X‐ray diffraction analysis. The average size of the nanoparticle was around 130–140 nm as confirmed by the TEM analysis. Synthesized PmAP silver nanocomposite showed the highest DC‐conductivity of 1.03 × 10^?6 S/cm. From the above characterizations, it can be said that silver nanoparticle shows some doping effect on the conductivity of PmAP. The doping level of the silver nanoparticle inside the polymer was optimized in terms of DC‐conductivity of the silver nanoparticle‐doped PmAP film. Copyright © 2009 John Wiley & Sons, Ltd.     

Synthesis and characterization of epoxidized polybutadiene/polyaniline graft conducting copolymer

In this article the synthesis and characterization of an elastomeric conducting material, obtained by grafting polyaniline (EB) on commercial cis‐1,4‐polybutadiene (PB), are described. PB was first partially epoxidized in chloroform solution using meta‐chloroperbenzoic acid (MCPBA). The conducting polymer was then grafted to the activated polybutadiene (EPB) via the aminolysis reaction between the polyaniline NH₂ terminal groups and the oxirane rings. The material so obtained (EPBPAN) and the epoxidized intermediate product were characterized by ¹H NMR, ¹³C NMR, Fourier transform infrared, and ultraviolet–visible spectroscopy, thermal and mechanical analysis, and electrical conductivity measurements. The effect of the sample deformation on conductivity also was analyzed. The HCl doping of the EPBPAN film induced crosslinking reactions, generated by the acid cleavage of unreacted oxirane groups. The electrical conductivity of the doped material reached values of about 10^?5 Ω^?1 cm^?1. The key characteristics of our elastomeric conducting material are its simple synthesis, its starting as a commercial product, and the solubility of its undoped form in a common low‐boiling organic solvent like chloroform. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 3082–3090, 2004     

Theoretical study of sorption-induced bending of polypyrrole films

Polypyrrole films containing perchlorate were electrochemically synthesized and the bending and recovery motion of the films obtained has been investigated. It was found that the thickness of the film and ambient relative humidity (RH) were crucial to the motion of film: An increase of the film thickness decreased the displacement of the bending but increased the bending stress. On the other hand, an increase of the ambient RH decreased both functions. The motion of film was caused by the difference of expansion on both sides of the film owing to anisotropic sorption of water vapor, which could be expressed by the diffusion-limited bending model. The diffusion coefficients calculated from the bending and recovery motion at 25°C, RH 50% were 12.2 × 10⁻⁸ cm² s⁻¹ and 3.5 × 10⁻⁸ cm² s⁻¹, respectively. The maximum expansion of the film surface calculated from the bending curve was about 0.36%. © 1998 John Wiley & Sons, Inc. J. Polym. Sci. B Polym. Phys. 36: 2237–2246, 1998     

Thickness dependence of thermally induced changes in surface and bulk properties of Nafion® nanofilms

Thermally induced changes in surface wettability, dewetting behavior, and proton transport of “self‐assembled” nanothin Nafion^® films (4–300 nm) on SiO₂ substrate is reported. Thermal annealing induces switching of the surface wettability of 55 nm and thinner films from hydrophilic to super‐hydrophobic. Thickness dependence of this behavior is observed with higher annealing temperature required for lower thickness films, indicating highly restrictive mobility of Nafion^® ionomer as film thickness decreases. Dewetting is only observed for 4‐nm thin film. Significant suppression in proton conductivity upon thermal annealing was noted. Similarly, two other bulk properties, water uptake and swelling, were found to decrease upon annealing. This work reports a systematic examination of the thickness dependence of thermally induced changes in both surface and bulk properties of ultra‐thin Nafion^®. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1267–1277     

Preparation of porous polyimide/in‐situ reduced graphene oxide composite films for electromagnetic interference shielding

Herein we report an easy and efficient approach to prepare lightweight porous polyimide (PI)/reduced graphene oxide (RGO) composite films. First, porous poly (amic acid) (PAA)/graphene oxide (GO) composite films were prepared via non‐solvent induced phase separation (NIPS) process. Afterwards PAA was converted into PI through thermal imidization and simultaneously GO dispersed in PAA matrix was in situ thermally reduced to RGO. The GO undergoing the same thermal treatment process as thermal imidization was characterized with thermogravimetric analysis, Raman spectra, X‐ray photoelectron spectroscopy and X‐ray diffraction to demonstrate that GO was in situ reduced during thermal imidization process. The resultant porous PI/RGO composite film (500‐µm thickness), which was prepared from pristine PAA/GO composite with 8 wt% GO, exhibited effective electrical conductivity of 0.015 S m^?1 and excellent specific shielding efficiency value of 693 dB cm² g^?1. In addition, the thermal stability of the porous PI/RGO composite films was also dramatically enhanced. Compared with that of porous PI film, the 5% weight loss temperature of the composite film mentioned above was improved from 525°C to 538°C. Moreover, tensile test showed that the composite film mentioned above possessed a tensile strength of 6.97 MPa and Young's modulus of 545 MPa, respectively. Copyright © 2016 John Wiley & Sons, Ltd.     

Conductive Fused Porphyrin Tapes on Sensitive Substrates by a Chemical Vapor Deposition Approach

Oxidative polymerization of nickel(II) 5,15‐diphenyl porphyrin and nickel(II) 5,15‐bis(di‐3,5‐tert‐butylphenyl) porphyrin by oxidative chemical vapor deposition (oCVD) yields multiply fused porphyrin oligomers in thin film form. The oCVD technique enables one‐step formation, deposition, and p‐doping of conjugated poly(porphyrins) coatings without solvents or post‐treatments. The decisive reactions and side reactions during the oCVD process are shown by high‐resolution mass spectrometry. Owing to the highly conjugated structure of the fused tapes, the thin films exhibit an electrical conductivity of 3.6×10^?2 S cm^?1 and strong absorption in the visible to near‐infrared spectral region. The formation of smooth conjugated poly(porphyrins) coatings, even on sensitive substrates, is demonstrated by deposition and patterning on glass, silicon, and paper. Formation of conductive poly(porphyrins) thin films could enable the design of new optoelectronic devices using the oCVD approach.     

Structural and optoelectrical properties of nanocrystalline Gd-doped CdO films prepared by sol gel method

Gd-doped CdO thin films with various Gd concentrations have been prepared on glass and Si wafer substrates using sol gel technique. The films were characterised by X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and dc-electrical measurements. XRF method was used to determine the %Gd content in the films while XRD was used to study the influence of Gd doping on the detailed crystalline structure. Experimental data indicate that Gd³⁺ doping with level of less than 2.4% slightly enlarge the CdO crystalline unit cell. The bandgap (E _g) of Gd-doped CdO suffers narrowing by about 13% due to a small (0.2%) doping level but with %Gd doping level larger than 2.4%, E _g becomes wider than that of undoped CdO. The electrical behaviours of the Gd-doped CdO films show that they are degenerate semiconductors. The 2% Gd-doped CdO film shows increase in its mobility by about 92%, conductivity by 320%, and carrier concentration by 127%, relative to undoped CdO film. From transparent-conducting-oxide point of view, the Gd doping of CdO by sol gel method is not effective. Finally, the absorption in the NIR spectral region was investigated to be due to the free electrons.