Aerosol deposition of detonation nanodiamonds used as nucleation centers for the growth of nanocrystalline diamond films and isolated particles

The aerosol deposition of detonation nanodiamonds (DNDs) on a silicon substrate is comprehensively studied, and the possibility of subsequent growth of nanocrystalline diamond films and isolated particles on substrates coated with DNDs is demonstrated. It is shown that a change in the deposition time and the weight concentration of DNDs in a suspension in the range 0.001–1% results in a change in the shape of DND agglomerates and their number per unit substrate surface area N _s from 10⁸ to 10¹¹ cm⁻². Submicron isolated diamond particles are grown on a substrate coated with DND agglomerates at N _s ≈ 108 cm⁻² using microwave plasma-enhanced chemical vapor deposition. At N _s ≈ 10¹⁰ cm⁻², thin (∼100 nm) nanodiamond films with a root-mean-square surface roughness less than 15 nm are grown.     

Spectrum and mechanism of the acceleration of protons in a solar flare

Investigations based on neutron monitor data show that two components of relativistic cosmic rays are generated by a solar flare. The so-called prompt component comes from a flare with flight times and is characterized by an exponential spectrum with a parameter of E ₀ ≈ 0.5 Gev. Numerical simulation of the conditions in the flare current sheet of the Bastille flare demonstrated that such a spectrum is formed at a magnetic reconnection velocity of ∼10⁷ cm s⁻¹. The delayed component has a power law spectrum and is apparently formed during the diffusion of protons in the plasma of the interplanetary magnetic field.     

Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10⁻¹⁰ W/Hz^1/2. With estimated frequency dependent antenna effective area S_est for contact wires considered as antennas, the estimated possible noise equivalent power NEP_pos for n-MOSFET structures themselves can be from ∼15 to ∼10³ times better in the specral range of ν ∼55–78 GHz reaching NEP_pos ≈10⁻¹² W/Hz^1/2.     

Evolution and structure of the plasma of current sheets forming in two-dimensional magnetic fields with a null line at low initial gas ionization and their interpretation

An analysis of the experimental data obtained by holographic interferometry in our work [1] makes it possible to explain most of the observed specific features of the structure and evolution of the plasma sheets developing in a two-dimensional magnetic field with a null line in a plasma with a low initial degree of ionization (≈10⁻⁴). The following two processes are shown to play a key role here: additional gas ionization in an electric field and the peculiarities of plasma dynamics in a current sheet expanding in time.     

Interaction of muonium with oxygen on silica powder surfaces

Results of the first μSR studies using Merck FO Optipur silica powder, which contains paramagnetic impurities at the ppb level and has a surface area of 610±20 m²/g. are reported. Above 20 K, the transverse field muonium relaxation rate is roughly constant at 0.5 μs⁻¹. Upon the addition of oxygen at ppm levels, the relaxation rate increases linearly with O₂ concentration in the temperature range from 40–100 K yielding two-dimensional depolarization rate constants on the order of 10⁻⁴ cm² molecule⁻¹ s⁻¹. As the temperature is increased further, both oxygen and muonium desorb from the surface yielding a three-dimensional rate constants at 300 K of 3.1(3)×10–10⁻¹⁰ cm³ molecule⁻¹ s⁻¹, in agreement with the gas phase value. Longitudinal field measurements suggest that MuO₂ is formed and is able to spin exchange with other oxygen molecules.     

Target plasma formation by UHF power

The properties of plasma injected into an open magnetic trap of uniform field from an independent UHF source have been investigated. Plasma is created in the UHF source at the frequency of 2400 MHz (power input 150 W) in the electron cyclotron resonance (ECR) regime at the pressure of neutral argon (10⁻⁵−10⁻²) torr. It is established that a rather quiescent target plasma with controlled density within the range of (2 × 10⁸−2 × 10¹²) cm⁻³ and temperature 2–3eV is accumulated in the trap. It turned out that plasma lifetime in the trap is determined by a classical mechanism of particle escape at the expense of collisions, at fixed value of magnetic field in the trap it practically is not changed with the variation of neutral gas pressure and reaches the value ≈ 4×10⁻³ s at the magnetic field strength in the trap equal 1600 Oe.     

Nature of low-energy excitations in La<Subscript>1.87</Subscript>Sr<Subscript>0.13</Subscript>CuO<Subscript>4</Subscript> superconducting cuprate

The spectra of the conductivity and dielectric constant of La_1.87Sr_0.13CuO₄ cuprate have been directly measured in the frequency range of 0.3 to 1.2 THz (10–40 cm⁻¹) and the temperature range of 5 to 300 K in the E | c polarization (the electric field vector of radiation is perpendicular to the copper-oxygen planes). Excitation has been observed in the superconducting phase, and its nature has been attributed to the transverse optical excitation of the condensate of Cooper pairs, which appears because Josephson junctions between CuO planes are modulated due to in-plane magnetic and charge stripes. Additional quasiparticle absorption of unknown origin has been detected at frequencies below ≈15 cm⁻¹ at liquid helium temperatures.     

Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon

The residual polarization of negative muons in n-type silicon with impurity density (1.6±0.2) · 10¹³ cm⁻³ is investigated as a function of temperature in the range 10–300 K. The measurements are performed in an external magnetic field of 0.08 T oriented transversely to the spin of the muons. Relaxation of the muon spin and a shift of the precession frequency are observed at temperatures below 30 K. The relaxation rate at 30 K equals 0.25±0.08 μs⁻¹. The shift of the precession frequency at 20 K equals 7 · 10⁻³. Both the relaxation rate and the shift of the precession frequency increase as the temperature decreases. At temperatures below 30 K the relaxation rate is described well by the relation Λ=bT ^−q , where q=2.8±0.2. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 7, 539–543 (10 April 1996)     

The superconducting properties of YBa2(Cu1−xMx)3O7 for M=Zn and Ni

Transverse and zero-field μSR measurements were made on YBa₂(Cu_1−xNi_x)₃O_7−y withx=0.1 and 0.2, and YBa₂(Cu_1−x Zn _x )₃O_7−y withx=0.03, 0.06, 0.1, and 0.16, wherey≈0.1. Since doping may lead to magnetic ordering this was searched for with both zero and transverse field μSR, but no evidence was found over the temperature range studied: 10–100 K. However, depolarization rates as functions of temperature were obtained, and the low temperature values of these are σ=3.2 μs⁻¹.1.6μs⁻¹, and 1 μs⁻¹ forx=0.01, and 0.2 Ni, respectively, and σ=0.8 μs⁻¹, 0.75 μs⁻¹, 0.65 μs⁻¹, and 0.4 μs⁻¹ forx=0.03, 0.06, 0.1, and 0.16 Zn, respectively. Estimates for the effect of decreasing electron concentration for Zn are made, but these alone do not account for the drop in σ. Estimates for the effect of scattering on λ and hence σ are made. The reduction in σ for Ni dopant is in surprisingly good agreement with these estimates. For Zn the order of magnitude is correct, but the relative lack of further change in σ after the effect of the first 0.03 addition seems to imply a saturation of the effect of scattering.     

Stimulated brillouin scattering of electromagnetic ion cyclotron waves in a plasma

Using the fluid model for the nonlinear response of ions, we have studied the nonlinear scattering of an electromagnetic ion cyclotron wave off the ion acoustic wave in a plasma. The low frequency nonlinearity arises through the parallel ponderomotive force on ions and the high frequency nonlinearity arises through the nonlinear current density of ions. For a typical nonisothermal plasma (T _e/T _i∼10) the threshold for this instability in a uniform plasma is ∼1mW/cm². At power densities ≳10² W/cm², the growth rate for backscatter turns out to be ∼10⁴s⁻¹.     

Quantum diffusion of muonium in GaAs

The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT ₁ relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 10¹⁰ s⁻¹ (corresponding diffusion constantD≈10⁻⁶ cm²s⁻¹) at lower temperatures as well as at room temperature.     

Cyclotron emission of electromagnetic waves by electrons having an exponential distribution

Expressions are obtained for the cyclotron emissivity and absorption coefficient of nonrelativistic electrons having an exponential distribution ≈exp (-ɛ/ɛ_*) in a magnetic field. The nondipole nature in a wide range of cyclotron frequency harmonicss≪s _* ² is taken into account by a simple factor exp (−s ²/s _* ² ). The formulas can be used to calculate the radio emission from the flare plasmas of solar and stellar coronas. Institute of Terrestrial Magnetism, the Ionosphere, and Radio-Wave Propagation, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 42, No. 2, pp. 82–85, February, 1999.     

Low-temperature mobility of surface electrons and ripplon-phonon interaction in liquid helium

The low-temperature dc mobility of the two-dimensional electron system localized above the surface of superfluid helium is determined by the slowest stage of the longitudinal momentum transfer to the bulk liquid, namely, by the interaction between the surface and volume excitations of liquid helium, which decreases rapidly with the temperature. Thus, the temperature dependence of the low-frequency mobility is μ_dc ≈ 8.4 × 10⁻¹¹ n _e T ^−20/3 cm⁴ K^20/3/(V s), where n _e is the surface electron density. The relation T ^20/3 E_⊥⁻³ ≪ 2 × 10⁻⁷ between the pressing electric field (in kilovolts per centimeter) and temperature (in Kelvins) and the value ω ≲ 10⁸ T ⁵ K⁻⁵ s⁻¹ of the driving-field frequency have been obtained, at which the above effect can be observed. In particular, E _⊥ ≃ 1 kV/cm corresponds to T ≲ 70 mK and ω/2π ≲ 30 Hz.     

On the electric activity of superfluid systems

The Keldysh theory of the superfluidity of a diluted electron-hole gas has been generalized to the case of the possible polarization of the pairs. It has been shown that the inhomogeneity of the system induces the dipole moment, which appears near the system boundaries and is proportional to the gradient of the particle density. It has been found that the quantized vortices in the magnetic field carry a real electric charge. The charge density in He II rotating at a rate of 10²s⁻¹ in a magnetic field of 10 T is about 10⁴ e cm⁻³, where e is the elementary charge.     

Magnetoplasticity and diffusion in silicon single crystals

The effect of static magnetic fields on the dynamics of surface dislocation segments, as well as the diffusion mobility of a dopant in silicon single crystals, has been analyzed. It has been experimentally found that the preliminary treatment of p-type silicon plates (the dopant is boron with a concentration of 10¹⁶ cm⁻³) in the static magnetic field (B = 1 T, a treatment time of 30 min) leads to an increase in the mobility of surface dislocation segments. The characteristic times of observed changes (about 80 h) and the threshold dopant concentration (10₁₅ cm⁻³) below which the magneto-optical effect in silicon is not fixed have been determined. It has been found that diffusion processes in dislocation-free silicon are magnetically sensitive: the phosphorus diffusion depth in p-type silicon that is preliminarily aged in the static magnetic field increases (by approximately 20%) compared to the reference samples.     

Immobilization of luminescent nanosilicon in a microfine polytetrafluoroethylene matrix by means of supercritical carbon dioxide

With the use of supercritical carbon dioxide (SC-CO₂), the matrix immobilization of photoluminescent silicon nanocrystals (nc-Si) in polytetrafluoroethylene microparticles (mp-PTFE) is performed, which leads to the formation of mp-PTFE/nc-Si photoluminescent nanocomposite containing ∼10³–10⁴ nc-Si particles per mp-PTFE particle (1–2 μm in size). This approach is based on the effect of polymer swelling in SC-CO₂, efficient SC-CO₂-assisted transport of nanoparticles into the internal free volume of the polymer, and contraction of the nanocomposite after the release of CO₂, an effect that prevents the subsequent agglutination of nanoparticles. Particles of nc-Si photoluminescent in the visible spectrum were synthesized from silicon suboxide powder (SiO _x , x ≈ 1) heated at various temperatures within 25–950°C and then etched in concentrated hydrofluoric acid. The hydrosilylation procedure was used to graft 1-octadecene molecules to the surface of nc-Si particles. As a result, the photoluminescence intensity of nc-Si increased substantially. According to TEM images and small angle X-ray scattering data, the maximum size of nc-Si particles did not exceed 5 nm and 7 nm, respectively, and the core of these nanoparticles consisted of crystalline silicon. The structure and spectral properties of the initial nc-Si particles and synthesized mp-PTFE/nc-Si photoluminescent nanocomposite microparticles were studied.     

Magnetoplastic effect in LiF crystals and longitudinal spin relaxation

New features of the dependence of the average travel distance l of dislocations on the magnetic field B have been found in an investigation of the magnetostimulated dislocation mobility in LiF crystals: A transition has been found from ordinary proportionality l∝B ² to saturation l≈ const in high fields B. It is shown that the experimental points can be described satisfactorily by the theoretical dependence l∝ [(B ₀/B)²+1]⁻¹ (B ₀≈0.8 T), typical for the mechanism of longitudinal spin relaxation in a system of radical pairs, which are supposedly formed when dislocation nuclei interact with paramagnetic impurity centers. According to the theory, the level of the field B ₀ is determined by the characteristic frequency of the oscillations of the internal fields in the lattice, which for B ₀∼1 T is of the order of 10¹¹s⁻¹, which corresponds to the typical frequency of characteristic oscillations of dislocation segments between pinning centers, which, naturally, does not depend on temperature. This in turn explains the fact that the measured values of B ₀ are the same at 293 K and 77 K. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 11, 749–753 (10 December 1999)     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

The attenuation of oscillatory thermocapillary convection in the oxide melt by a transverse magnetic field

The effect of a transverse magnetic field on the oscillatory thermocapillary convection in the NaBi(WO4)2 melt was studied by using the in-situ observation system. The oscillation was attenuated when the 60 mT magnetic field was applied, as shown by the decrease in the amplitude and the frequency. Furthermore, the oscillation under smaller temperature difference was stabilized after the magnetic field was applied. The magnetic effect could be due to the Lorentz force generated by the interaction between motional ions and the vertical magnetic field. The ionic conductivities were measured to demonstrate the effect of the magnetic field. The solid ionic electrical conductivity increases with the temperature rise, and the melt ionic electrical conductivity was measured to be about 2.0×10-4 Ω-1·cm-1. Experimental results manifest that the effect of the magnetic field on anions and cations in the melt makes the flow change to the direction normal to the applied field, so the flow is more orderly and the oscillation is suppressed.     

Experimental and computational study of the passage of an electron beam through the curvilinear element of the Drakon stellarator system in a tenuous plasma

Results are presented from the first stage of studies on the passage of an electron beam with energy 100–500 eV in a magnetic field of 300–700 Oe through the curvilinear solenoid of the KRéL unit, the latter being a prototype of the closing segment of the Drakon stellarator system, in the plasma-beam discharge regime. The ion density at the end of the curvilinear part of the chamber, n _i ≈8×10⁸–10¹⁰ cm⁻³, the electron temperature T _e ≈4–15 eV, and the positions at which the beam hits the target for different distances from it to the electron source are determined experimentally. The motion of the electron beam is computationally modeled with allowance for the space charge created by the beam and the secondary plasma. From a comparison of the experimentally measured trajectories and trajectories calculated for different values of the space charge, we have obtained an estimate for the unneutralized ion density of the order of 5×10⁷ cm⁻³. Zh. Tekh. Fiz. 69, 22–26 (February 1999)