Observation of luminescence from bound multiexciton complexes in gallium doped germanium

Spectrally resolved luminescence associated with the decay of bound multiexciton complexes in optically excited Ge:Ga is observed. This is the first reported observation of multiexciton complexes in p-type germanium. The observed spectra are consistent with the shell model for bound multiexciton complexes.No-phonon, TA, LA, and TO phonon assisted luminescence are observed. From these spectra, the energies of the LA, TA, and TO phonons in Ge:Ga are determined.     

Diffusion of nondecaying TA-phonons

Propagation of nonequilibrium phonons under spontaneous decay and impurity scattering is studied on an isotropic model with one decaying and one nondecaying phonon branch (LA and TA). It is shown that the phonon nonequilibrity spreads in space linearly with time, the spreading velocity being of the order of the sound velocity.     

海洛因的傅里叶红外吸收谱

给出海洛因和鸦片的傅里叶红外吸收实测谱。根据吸收峰的位置，计算出海洛因的基本声子能量：ＥＬＯ＝０．０４８６ｅＶ，ＥＴＯ１＝０．０５５５ｅＶ，ＥＴＯ２＝０．０６１６ｅＶ，ＥＬＡ＝０．０２５７ｅＶ，ＥＴＡ１＝０．００９７ｅＶ，ＥＴＡ２＝０．０１３４ｅＶ。这些声子按照不同的组合方式，形成海洛因的全部傅里叶红外吸收峰。     

N型4H-SiC低温拉曼光谱特性

利用拉曼散射技术对N型4H-SiC单晶材料进行了30～300 K温度范围的光谱测量。实验结果表明,随着温度的升高,N型4H-SiC单晶材料的拉曼峰峰位向低波数方向移动,峰宽逐渐增宽。分析认为,晶格振动随着温度的升高而随之加剧,其振动恢复力会逐渐减小,使振动频率降低;原子相对运动会随温度的升高而加剧,使得原子之间及晶胞之间的相互作用减弱,致使声学模和光学模皆出现红移现象。随着温度的升高,峰宽逐渐增宽。这是由于随着温度的升高声子数逐渐增加,增加的声子进一步增加了散射概率,从而降低了声子的平均寿命,而声子的平均寿命与峰宽成反比,因此随着温度的升高峰宽逐渐增宽。声子模强度随温度升高呈现不同规律,E₂(LA),E₂(TA),E₁(TA)和A₁(LA)声子模随着温度升高强度单调增加,而E₂(TO),E₁(TO)和A₁(LO)声子模强度出现了先增后减的明显变化,在138 K强度出现极大值。分析认为造成原因是由于当温度高于138 K时,高能量的声子分裂成多个具有更低能量的声子所致。     

Soft modes and phonon interactions in studied by neutron scattering

The low frequency lattice dynamics and its relationship to the second order paraelectric-to-ferroelectric transition in Sn₂P₂S₆ is studied. The dispersion branches of the acoustic and lowest lying optical phonons in the a^*-c^* plane have been obtained in the ferroelectric phase, for x-polarized phonons. Close to the phase transition a considerable softening is found for the lowest optical mode (P_x), comparable to the behaviour observed in previous Raman investigations. As found previously in Sn₂P₂Se₆, a strong coupling between the TO(P_x) and TA(u_xz) phonons is observed, although, apparently, not strong enough to lead to an incommensurate phase. The soft TO(P_x) mode at the zone center is observed. The temperature dependence of its frequency and damping shows that the transition is not entirely displacive. At low temperatures an unusual apparent negative LO-TO splitting is observed which is shown to arise from the coupling of the x-polarized soft mode to the nearby z-polarized optical phonon. For comparison, the soft TO(P_x) dispersion in the a^*-b^* plane is measured in both the paraelectric and ferroelectric phases. Consistent frequency changes and LO-TO splitting are observed, revealing a significant interaction between the TA(u_yx) and LA(u_xx) acoustics branches and the TO and LO soft optic branches, respectively. In contrast, the nearby y-polarized optic branch shows almost no temperature dependence. Finally, the influence of piezoelectric effects on the limiting acoustic slopes in the ferroelectric phase is discussed. Received: 11 May 1998 / Revised and Accepted: 15 June 1998     

Pressure dependent optical phonon anharmonicity in GaP

The asymmetric Raman line shape of the TO(Γ) phonon in GaP has been carefully measured under hydrostatic pressure up to 87 kbar (room temperature). At high pressure the peak becomes symmetric and a weak sideband emerges. These results can be explained as due to the third order anharmonic interaction of TO(Γ) with the combination modes TA + LA(≈ X). A calculation of this effect, based on the measured phonon dispersion of GaP, is successful in fitting the observed line shape at all pressures. The anharmonic coupling strength for the decay TO(Γ) → TA + LA(≈ X) is found to decrease linearly with pressure by an appreciable amount.     

Dual Space Analyzing Based on Symmetry Properties for Phonons of Si Quantum Dot

Phonon modes in spherical Si quantum dots (QDs) with up to 7.9 nm in diameter are calculated by using the projection operators of the group theory into valence force field model. The phonons of dot modes in each of five irreducible representations (symmetries) are classified by using a dual space analysis method. It is found that the bulk-like modes with localization radius much smaller than the dot‘s radius have clearly pronounced bulk specific-κdefinite bulk band (one in six modes). In Si dots of all sizes, each specific bulk-like dot mode has specific symmetry.TO dot modes and bulk-like X-derived TA and LA dot modes red-shift in frequency with decreasing dot size. There is almost not LO/TO mixing for bulk-like modes. As for the surface-like modes localized at the periphery of the dot,their eigenmodes have not a dominant bulk specific-κ point parentage or a dominant BZ parentage around some special point. They are a superposition of many bulk bands with κ from all over the bulk BZ. They have much significant mode mixing than the bulk-like phonons. The classification of dot modes based on the symmetry of group theory will bring advantageous to the discussion of Ramam spectrum, electron-phonon interaction and other phonon-assisted effects in QDs.     

Resonant Frequency of Impurity Polaron in a Quantum Well

It is shown that the resonant frequency ω_c^* of a magnetopolaron bound to a Coulomb impurity in a GaAs/Ga_1-xAl_x AS quantum well is lower than that oflongitudinal optical (LO) phonons owing to the effect of the Coulomb potential. Using MacDonald method to treat the Coulomb potential we come to the conclusion that ω_c^* is really below the frequency of LO phonons but not "pinning" at a frequency near that of TO phonons.     

Raman probe studies of Nd: YAlG laser generated non-equilibrium excitations in GaAs

A survey is presented of the non-equilibrium excitations in GaAs that can be probed by Raman scattering. Intense Q-switched Nd:YAlG laser pulses are used both for generating the non-equilibrium excitations at low temperature, and for in-situ Raman scattering probe measurements. Particular emphasis is placed on the search for non-equilibrium, zone-edge slow TA phonons. We discovered that the difference frequency combination spectrum involving slow TA phonons is surprisingly coincident with the acceptor excitation line spectrum for the Zn impurity. The discrimination between the non-equilibrium phonon population and a non-equilibrium hole population on minority acceptors in n-GaAs is discussed.     

Dispersive phonon modes by resonant Raman scattering in AgBr

Dispersive Raman modes are observed in AgBr at low temperatures when the incident laser light is tuned across the indirect Γ-L^′₃ exciton absorption. These modes occur as sidebands of the resonantly enhanced 2 TO(L), TO+LA(L) and 2 LA(L) Raman peaks and are interpreted as being due to three- and four-phonon processes, respectively. They involve longitudinal acoustic phonons near the Brillouin zone center that exhibit strong dispersion. From analysing the spectra the relaxation of the intermediate exciton state can be studied in detail. The model applied enables us to obtain directly the average effective mass of the ls indirect exciton as 1.5 electron masses.     

Selection rules for multiphonon transitions at tetrahedral lattice sites

Selection rules for the involvement of phonons of the host crystal in multiphonon transitions associated with substitutional impurities having either a |s> or |p> localized state are derived. It is shown that for P₁ → P₁ transitions only LA and LO phonons are important, and also that a P₄ localized state couples with all phonons. The latter, plus the lack of a selection bar, suggests that such impurity states are more strongly coupled to the lattice that P₁ states.     

Dual Space Analyzing Based on Symmetry Properties for Phonons fo Si Quantum Dot

Phonon modes in spherical Si quantum dots (QDs) with up to 7.9 nm in diameter are calculated by using the projection operators of the group theory into valence force field model. The phonons of dot modes in each of five irreducible representations (symmetries) are classified by using a dual space analysis method. It is found that the bulk-like modes with localization radius much smaller than the dot's radius have clearly pronounced bulk specific-k point parentage, T_λ(n, k_BZ, K_cut), from specific part of the Brillouin zone (BZ) (Γ-derived, X-derived etc.) and from definite bulk band (one in six modes). In Si dots of all sizes, each specific bulk-like dot mode has specific symmetry. The bulk TO(Γ)-like and the bulk LO(Γ)-like dot modes always have T₂ and A₁ symmetries, respectively. Except the bulk-A(Γ)-like dot modes of which the frequencies blue-shift as the dot size reducing, the bulk-like Γ-derived LO and TO dot modes and bulk-like X-derived TA and LA dot modes red-shift in frequency with decreasing dot size. There is almost not LO/TO mixing for bulk-like modes. As for the surface-like modes localized at the periphery of the dot, their eigenmodes have not a dominant bulk specific-k point parentage or a dominant BZ parentage around some special point. They are a superposition of many bulk bands with k from all over the bulk BZ. They have much significant mode mixing than the bulk-like phonons. The classification of dot modes based on the symmetry of group theory will bring advantageous to the discussion of Ramam spectrum, electron-phonon interaction and other phonon-assisted effects in QDs.     

Phonon dispersion in AgBr and exchange of the transverse mode Eigenvectors at L

Using inelastic neutron scattering, phonon dispersion curves for AgBr at 85 K are measured along the 〈100〉, 〈110〉 and 〈111〉 directions in reciprocal lattice. Special attention is payed to the anomalous behaviour of the TA and TO branches at the L-point (0.5; 0.5; 0.5). With high resolution (Δv = 0.24 THz) their frequencies are determined to be 1.54 and 1.93 THz, respectively. The ratio of their integrated intensities is found to be 2.15 ± 0.4. This value is in good agreement with the ratio of 2.38 calculated under the assumption that at L the heavier (Ag⁺) ions is vibrating with the higher and the lighter (Br^-) ion with the lower frequency, as suggested by recent lattice dynamical calculations. Comparison of our phonon frequencies with corresponding optical data prove that the momentum-conserving phonons associated with the lowest indirect exciton transition belong to the TO and LA phonon branches at L. Since the lowest conduction band minimum at Γ is well established experimentally, our results in turn imply that the uppermost valence band maximum is right at the L-point.     

Modulation of the phonon structures in piezotransmission experiments

The ratio of the piezomodulation parameters of the indirect transitions assisted respectively by the LA and the TA phonons is calculated. In the case of GaP, we compare a piezotransmission spectrum and a wavelength modulation one, and we discuss the different values quoted in the literature for the hydrostatic deformation potential of the indirect edge.     

Neutron scattering study of phonons associated with indirect band-gap transition in AgBr

Phonons in AgBr are studied by neutron inelastic scattering along the [111] direction of reciprocal lattice. From the phonon dispersion and the optical data, it is concluded that the valence band maximum is at the L-point and the phonons participating in the indirect band-gap transition are identified as TO(L) and LA(L).     

Two-phonon resonant Raman scattering at the indirect exciton in silver chloride

Resonant Raman scattering in AgCl is reported for the first time. With excitation in the indirect absorption edge at 1.8K the observed scattering processes involve pairs of momentum-conserving TA(L) and LA(L) phonons with energies of 8.2 meV and 12.9 meV, respectively. The dependence of the scattered intensity on excitation energy suggests that, in contrast to AgBr, intravalley scattering by long wavelength acoustic phonons and intervalley scattering are negligibly small, the main relaxation mechanism of the free exciton being self-trapping. Some enhancement in the 2LO scattering intensity observed is probably due to resonance with the lowest direct exciton.     

Double acceptor bound exciton in Ge

Six photoluminescence lines from excitons bound to neutral zinc acceptors in germanium are observed. The six lines consist of three replicas associated with zero, TA and LA phonons. Two lines from each replica correspond to the transitions from the split ground states of the bound exciton complex. The binding energy of the bound exciton is found to be 3.2 meV.     

Remarks on the theory of electron capture into shallow donors in GaAs

A new model for low-temperature recombination of conduction electrons to ionized donors in GaAs is proposed. It assumes that the conduction electron is captured into the ground state of shallow impurity by simultaneous emission of two LA phonons. From a comparison of computed capture rate with recent experimental results the estimated value of the two-phonon deformation potential is d_2LA = 0.02 eV.     

Mode dispersion in the optical-phonon spectra of mixed crystals ZnS1−x Sex

The IR reflection and the Raman spectra of ZnS_1?x Se_x crystals (0≤ x ≤ 1) are measured. The mode dispersion of the solid solutions is found to deviate from that calculated using an isodisplacement model. The reasons behind this deviation are discussed. Two additional modes are found in the frequency range between the ZnS-like TO and LO modes. It is assumed that one of them is a line of the second-order spectrum amplified by the Fermi resonance and the other is linked to the resonance (additional local) mode of Se impurity atoms. The latter conclusion is confirmed by calculating the spectrum of a Se impurity in a ZnS crystal in terms of the microscopic lattice dynamics theory in the low impurity concentration approximation. The oscillator strengths of the main and additional optical phonons in ZnS_1?x Se_x solid solutions are discussed.     

Ultrafast vibrational dynamics and stability of deuterated amorphous silicon

Infrared four-wave mixing experiments performed upon deuterated amorphous silicon layers (a-Si:D) reveal profound differences in the dynamics of Si-D stretch vibrations compared to those of analogous Si-H vibrational modes in hydrogenated amorphous silicon (a-Si:H). Remarkably, transient-grating measurements of the population decay rate of the Si-D vibrations show single-exponential decay directly into collective modes of the a-Si host, bypassing the local bending modes of the defect into which the Si-H vibrations decay. Photon-echo measurements of the vibrational dephasing suggest at low temperature contributions from TO nonequilibrium phonons and at elevated temperatures elastic phonon scattering of TA phonons.