Deformation mechanism and dislocation structure of high-purity molybdenum single crystals at low temperatures

High purity molybdenum single crystals were deformed in tension and compression along the symmetric double slip orientation [110] in the temperature range from 300 K down to 0.5 K with strain rates between 10⁻³ and 10⁻⁵ s⁻¹. The activation volume was measured by stress relaxation tests. The dislocation structure of the deformed crystals (T → 1.85 K) was examined by high voltage electron microscopy. It was established that the low temperature increase of the critical shear stress exhibits three distinct temperature regimes with different temperature dependences. These non-uniformities are discussed in terms of recently developed theories of kink-pair formation and kink-kink interactions on screw dislocations in bcc metals. The HVEM observations suggest that the mobility of screw dislocations at very low temperatures should be determined by the combined effects of the PEIERLS barriers and the jog dragging.     

Stress relaxation behavior of soda-lime glass between the transformation and softening temperatures

The compressive stress relaxation modulus of a container glass composition was investigated over a wide range of strain, time, modulus, and temperature. It is shown that the glass behaves in a linear viscoelastic manner up to a 2% strain level, and that the relaxation modulus is a smooth function of time, with no pseudo-rubbery plateau apparent down to a modulus of 10⁸ dyn/cm². The data cover roughly five decades of modulus, five decades of time, and a temperature range of 150° C above the glass transition, T_g = 536°C. Within experimental error, the effect of temperature on the stress relaxation behavior is to simply shift the modulus-time curves along the time axis with no change in shape. Temperature dependent shift factor data are expressed in terms of the WLF relation, and are shown to be in good agreement with data found in the literature for other silicate compositions. Viscosity data derived from the generated stress relaxation data agree well with data obtained by more direct methods.     

Dislocation internal friction and temperature dependence of yield stress in high-purity molybdenum single crystals

High purity molybdenum single crystals (residual resistivity ratio ≈ 6 · 10⁴) were studied by means of computer-controlled internal friction technique at frequencies of about 100 kHz in the temperature range 6 to 300 K. The amplitude dependences of decrement were measured within the vibrational strain amplitude 10⁻⁷ to 10⁻⁴. It was established that the temperature dependence of ultrasonic amplitude providing a constant level of reversible dislocation deformation coincides well in relative units with the temperature dependence of the critical resolved shear stress at 20 to 180 K.     

Properties of CVD alumina-titania composite films grown at different CO2/H2 inputs

Amorphous alumina-titania (Al₂O₃-TiO₂) films were prepared on silicon substrates by low-pressure chemical vapor deposition (CVD) using a mixture of aluminum tri-sec-butoxide (ATSB) and titanium tetrachloride (TiCl₄) at different CO₂/H₂ inputs (the ATSB/TiCl₄/CO₂/H₂ system). The films had increased Al contents at higher temperatures and CO₂/H₂ inputs. The `splotchy' deposits were observed. The higher compressive internal stress at higher temperature was attributed to the films with a thinner thickness. Higher compressive internal stress and more Al-O bonding resulted in higher specific critical load. Films deposited at low temperature of 350 °C have a defected structure and a higher dielectric property, due to the non-stoichiometric nature at the Ti-rich composition. Resistivity decreased from 10¹¹ to 10⁸-10⁹ Ω cm after annealing. Breakdown voltages increased slightly with substrate temperature and were in the range of 2.3-6.4 MV/cm. Refractive indices were in the range of 1.71-2.28. Greater than 60% transmittance was observed at visible range for all films.     

Plateau Behaviour of Fatigued FCC Single Crystals

The mechanical behaviour of fatigued pure nickel monocrystals oriented for single slip was studied in push-pull tests at room temperature. Especially the cyclic hardening curves, the cyclic stress-strain curve and the shape changes of the hysteresis loops were investigated in the range of the plastic resolved shear strain amplitude, γ_ap, between 10^-10 and 10^-2. In this range the cyclic stress-strain curve exhibits a plateau which is related to plastic strain localization in persistent slip bands (PSBs) developing within the residual “matrix” volume. Using a two-phase model the cyclic saturation mechanical behaviour of the PSB and the matrix volumes has been determined. An explanation has been given of the constant plateau stress τ_B of the cyclic stress-strain curve by taking into account the nucleation stress for PSBs depending on the plastic resolved shear strain amplitude of the matrix volume. Further, the propagation rate of PSBs after strain amplitude increase in the plateau range has been calculated by applying the two-phase model.     

Low-frequency mechanical relaxation in CoO crystals

Internal friction Q ⁻¹ was studied in nominally pure and Li-doped CoO crystals at frequencies of about a few Hz in the temperature range from −180 to 20°C. Doping Co crystals with Li results in a new relaxation maximum of Q ⁻¹ at −115°C at a frequency of 3 Hz. The occurrence of this maximum is related to the reorientation of the Co³⁺-Li¹⁺ elastic dipole under external stress.     

Dynamic deformation of silicon-rich V3Si single crystals at elevated temperatures

The plastic deformation behaviour of the intermetallic phase V₃Si (Cr₃Si type) was investigated under dynamic conditions. The experiments revealed that V₃Si deforms plastically at a strain rate of about 4.7 × 10⁻⁵s⁻¹ above 1200°. Flow stress depends strongly on deformation temperature and strain rate. An alloy hardening by deviation from stoichiometric composition within the range of homogeneity is observed.     

The influence of OH−-ions on the mechanical properties in LiF and NaCl single crystals

The influence of the growing atmosphere on the mechanical properties was investigated on LiF and NaCl single crystals. The growing atmospheres were air or vacuum and argon, respectively. In a wide temperature range the air grown crystals have a higher flow stress and a smaller activation volume. Besides, the dislocations are less mobile. The differences arise probably from the OH⁻-ions, which were found in a considerable concentration in the air grown material. The OH⁻-ions may create lattice distortions by themselves or by the formation of different complexes with the divalent cation impurities. In this way the density of thermal and athermal obstacles for the dislocation motion increases.     

On the strengthening of Magnesium Single Crystals by Cadmium

Solid solution hardening in single crystals of magnesium containing cadmium (up to 2.4 at.%) has been investigated in the temperature range 77 K to 295 K. A strong temperature dependence of the critical resolved shear stress, τ₀, is observed below 230 K, while above this temperature τ₀ is temperature independent. At all temperatures τ₀ is found to increase linearly with c^2/3, where c is the concentration (in atomic fractions) of cadmium as solute. The concentration dependence of τ₀ can be explained by the theory of LABUSCH .     

Precision measurements of plastic deformation of β-CuZn at helium temperatures

By attaching condenser plates directly to the tensile specimen, creep rates of β-CuZn single crystals have been measured by the capacitance change in the strain-rate range of 10⁻⁷ to 10⁻⁵ s⁻¹ and at temperatures between 0.7 and 17 K using a ³He cryostat. Slope of the temperature variation of the stress to give a constant strain-rate decreases below 5 K and seems to level off at 0 K. The strain-rate sensitivity becomes almost constant below 2 K. The conventional activation analysis showed that an ARRHENIUS type strain-rate equation breaks down drastically below 5 K. For an effective temperature T^* which gives 2 K at 0 K and asympototically coincides with the testing temperature at 5 K, the experimental results can be fitted to the ARRHENIUS strain-rate equation with an activation enthalpy ΔH(τ) for the PEIERLS mechanism. The above result is interpreted in terms of the quantum-mechanical oscillation of the dislocations.     

Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal

Electrical conductivity (σ) and Hall coefficient (R_H) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p-type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm² V⁻¹ s⁻¹ and could described by the law μ = aTⁿ (n = 1.6) in the low temperature range. In the high temperature range, adopting the law μ = bT^–m (as m = 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98 × 10⁷ cm⁻³.     

Temperature dependences of the electrical conductivity and hall coefficient of indium telluride single crystals

Conductivity type, carrier concentration and carrier mobility of InTe samples grown by Bridgmann technique were determined by the Hall effect and electrical conductivity measurements. The study was performed in the temperature range 150–480 K. Two samples with different growth rate were used in the investigation. The samples under test were P-type conducting, in accordance with previous measurements of undoped material. The Hall coefficient was found to be isotropic yielding room temperature hole concentration in the range 10¹⁵ – 10¹⁶ cm⁻³. The hole mobilities of InTe samples were in the range 1.17 × 10³ – 2.06 × 10³ cm²/V · sec at room temperature. The band – gap of InTe determined from Hall coefficient studies has been obtained equal to 0.34 ev. The scattering mechanism was checked, and the electrical properties were found to be sensitive to the crystal growth rate.     

Diffusion of tin in soda-lime glass between the transformation point and softening point

The diffusion coefficients of tin in soda-lime glass in the temperature range of 500–630°C have been determined by measuring the concentration profile of tin with an electron microprobe. The values obtained were 3.20 × 10^?13 to 1.30 × 10^?12 cm² s^?1 over the given temperature range and the activation energy for diffusion was calculated to be 14.1 kcal/mol.     

Electrical properties of nitrogen implanted GaSe single crystal

N‐implantation to GaSe single crystals was carried out perpendicular to c‐axis with ion beam of 6 × 10¹⁵ ions/cm² dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100‐320 K. It was observed that N‐implantation decreases the resistivity values down to 10³ Ω‐cm depending on the annealing temperature, from the room temperature resistivity values of as‐grown samples lying in the range 10⁶‐10⁷ Ω‐cm. The temperature dependent conductivities exhibits two regions (100‐190 and 200‐320 K) with the activation energies of 234‐267 meV and 26‐74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility‐temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N‐implantation, the carrier density was analyzed by using single donor‐single acceptor model. We found acceptor ionization energy as E_a = 450 meV, and acceptor and donor concentration as 1.3 × 10¹³ and N_d = 3.5 × 10¹⁰ cm⁻³, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Superplastic flow of a Mg-based bulk metallic glass in the supercooled liquid region

The tensile flow behavior of Mg₆₅Cu₂₅Y₁₀ bulk metallic glass was investigated over a range of strain rates (10⁻³–10⁻¹/s) and deformation temperatures (150–170 °C) in the supercooled liquid region. In this region, the relationship between peak flow stress, strain rate and absolute deformation temperature was described adequately by the classic Sellars–Tegart constitutive relationship. There was also a good correlation between the Zener–Hollomon parameter, Z, and the flow characteristics of the material such as the transition from Newtonian to non-Newtonian flow and maximum achievable tensile elongation; the latter was used for determining the optimum conditions for superplastic flow in the material.     

The growth and mechanical properties of paratellurite single crystals at high temperatures

α-TeO₂ single crystals have been grown by the Czochralski method on specially developed systems with automatic growth control. The mechanical properties of crystals under compression in the [100], [110], and [221] directions at a constant strain rate of about 10⁻⁴ s⁻¹ in the temperature range T = 733−993 K have been investigated. The distribution of plastic shear strain in deformed samples is has been experimentally studied. Manifestations of localized strain in covalent paratellurite crystals at T > 900 K are revealed for the first time. The active slip systems along which localized shear band are oriented are determined. The temperature dependence of the critical stress of transition to localized flow is investigated.     

High temperature x‐ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

Zirconium oxide thin films have been deposited on Si (100) substrates at room temperature at an optimized oxygen partial pressure of 3x10^‐2 mbar by reactive pulsed laser deposition. High temperature x‐ray diffraction (HTXRD) studies of the film in the temperature range room temperature‐1473 K revealed that the film contained only monoclinic phase at temperatures ≤ 673 K and both monoclinic and tetragonal phases were present at temperatures ≥ 773 K. The tetragonal phase content was significantly dominating over monoclinic phase with the increase of temperature. The phase evolution was accompanied with the increase in the crystallite size from 20 to 40 nm for the tetragonal phase. The mean thermal expansion coefficients for the tetragonal phase have been found to be 10.58x10^‐6 K^‐1 and 20.92x10^‐6K^‐1 along a and c‐axes, respectively. The mean volume thermal expansion coefficient is 42.34x10^‐6 K^‐1 in the temperature range 773‐1473 K. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Mechanical behaviour of magnesium oxide single crystals at temperatures from 196 to 2400 °C

The stress — strain characteristics of MgO single crystals in compression are investigated in the temperature range from –196 °C to 2400 °C on samples of the same shape and size. It is shown that the stress — strain curves may be subdivided into three basic types, each of them corresponding to the definite temperature range. The work hardening rate at stage I is temperature independent and at stage II lineary decreases with temperature increase in overall temperature range where work hardening is observed. The high temperature maximum in the temperature dependence on the proportional limit is found which is not due to the effects of impurities. The effect of geometrical form of specimens on stress-strain parameters and the local true strain distribution in compressed specimens have been studied.     

Jump-like twin boundary movement in indium crystals

This is an investigation of the specific features of twin boundary movement by creep in indium crystals at room temperature. It has been shown that in the most structurally perfect crystals, broadening of twin layers is jump-like. Jumps in the kinetic relations for boundary displacement are the most pronounced in the stress range where the initial boundary velocity becomes as high as (5 × 10⁻⁵–10⁻⁴) cm/s. The effect of the applied stress on the average jump density and the characteristic boundary motion velocities, that is the initial velocity, the velocities at the jump and just before it were investigated. Dislocation structure deterioration as well as impurity increase lead to changes in the boundary motion character, namely to monotonic reduction of boundary velocities with time. It has been ascertained that the jump-like nature of the boundary motion is due to boundary interaction with obstacles present in the crystal and unambiguously associated with periodically changing boundary structure: defect formation and eventual defect inclusion into the twinned material.     

Growth of p-type InP single crystals by the temperature gradient method

P-type InP single crystals doped with zinc or cadmium have been prepared from a solution using indium as a solvent in which a temperature gradient was maintained for the transport of the InP solute. The average growth rate was between 1.1 and 3.0 mm/week. The room temperature hole concentration of the crystals obtained was in a range of 10¹⁷ to 10¹⁸ cm^-3. The distribution coefficients of zinc and cadmium were 0.8 and 0.004, respectively. The temperature gradient method makes it possible to dope the crystals with volatile impurities in a controlled manner.