High temperature arsenic doping of CdHgTe epitaxial layers

Experimental results on solid‐state arsenic doping of the n‐type bulk and ISOVPE epitaxial Cd_XHg_1‐XTe (X = 0.19 ÷ 0.3) alloys are presented. The arsenic doped thin epitaxial Cd_xHg_1‐xTe films (n_As ≈ 5 · 10¹⁶ ÷ 1 · 10²⁰ cm^‐3; d = 2 ÷ 5 μm) obtained by RF sputtering in a mercury glow discharge were used as As diffusion sources. The arsenic diffusion and activation were carried out at temperatures T = 500 ÷ 600 °C under Hg vapour pressure. Immediately after the high temperature treatment all samples were annealed to annihilate point defects. The SIMS analysis was used for determination of the quantitative admixture distribution of As in the diffusion area. The arsenic electrical activity has been evaluated by means of differential Hall, resistivity and thermoemf measurements. The analysis of experimental data obtained as well as their comparison with previously obtained results has been performed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Comparison of lead solubility in NaCl crystals from data obtained by different methods

The solvus of the NaCl: Pb²⁺ system was found in the concentration range from 1.5 × 10⁻³ to 1.9 × 10⁻² mol% at temperatures ranging from 375 to 430 °C from the data of flotation measurements of the crystal density. The heat of impurity dissolution equal to 2.0 ± ± 0.6 eV and the change in the vibrational entropy in the formation of the solid solution S_v/K= 20 ± 10 were determined. Reasons for a difference in the estimates of lead solubility in NaCl, obtained from temperature dependences of light scattering and by other methods: measurement of the density, electric conductivity, and the electron-microscopic decoration of the same crystals are discussed.     

Thermoelectric properties of indium sesquiselenide single crystals

Single crystals of δ-In₂Se₃ were prepared in the solid state laboratory at Qena-Egypt, by means of Bridgman technique. The temperature dependence of the thermal e.m.f. α in the temperature range from 205 K up to 360 K of In₂Se₃ was studied. The δ-phase In₂Se₃ sample appeared to be n-type. The ratio of the electron and hole mobilities are found to be μ_n/μ_p = 1.378. The effective masses of charge carriers are m = 1.3 × 10⁻³⁰, m = 8.27 × 10⁻³¹ kg for holes and electrons, respectively. The diffusion coefficient was estimated to be D_n = 3.37 cm²/s and D_p = 2.45 cm²/s for both electrons and holes, respectively. The mean free time between collision can be deduced to be τ_n = 70 × 10⁻¹⁶ s and τ_p = 8 × 10⁻¹⁴ s for both electrons and holes. The diffusion length of the electrons and holes are found to be L_n = 1.5 × 10⁻⁷ cm and L_p = 4.4 × 10⁻⁷ cm.     

Electrical Characterization of Irradiation plus Annealing – induced VAsZnGa Pairs in p-type GaAs (Zn) Crystals

Effect of fast electron irradiation (E =2.2 Mev, ϕ_c = 1 × 10¹⁶ el/cm²) and subsequent annealings (T = 150 to 350 °C, t = 10 to 600 min) of zinc-doped p-type GaAs crystals on the formation and dissociation of V_AsZn_Ga, pairs is studied. An analysis of the formation and dissociation kinetics of V_AsZn_Ga pairs permitted to find the diffusion coefficient of radiation-induced arsenic vacancies D(D = 1.5 × 10⁻¹⁸, 1 × 10⁻¹⁷ and 5 × 10⁻¹⁷ cm²/s at 150, 175 and 200 °C accordingly), their migration energy ϵ_m(ϵ_m = 1.1 eV), the binding energy of V_AsZn_Ga, pairs ϵ_b(ϵ_b = 0.5 eV), and also their dissociation energy ϵ_d(ϵ_d = 1.6 eV).     

Investigations for Sn diffusion in Pb1−xSnxTe and PbTe

By annealing Pb_1−xSn_xTe and PbTe isothermally in a quartz ampoule Sn diffused from Pb_1−xSn_xTe into PbTe. The profiles obtained have been investigated by means of an electron beam microanalyser, and the coefficients of diffusion have been determined at various temperatures. The diffusion of Sn can be explained by the expressions: D_PbSnTe = 1.5 · 10⁻¹ exp (−1.8 eV/kT) cm² s⁻¹ (0,14 < x < 0,18) D_PbTe = 5,5 · 10⁻⁴ exp (−1.5 eV/kT) cm² s⁻¹. N-type layers are observed at the surface of Pb_1−xSn_xTe specimens.     

Thermoelectric power of indium sesquisulphide single crystals

The investigation covers a temperature range from 200 to 450 K. Thermoelectric power measurements of In₂S₃ crystals showed that all samples under investigation have a positive TEP in all temperature ranges, indicating n-type conductivity for In₂S₃ crystals. The ratio of the electron and hole mobilities is μ_n/μ_p = 4.71. The effective mass of electrons m is found to be 0.00008 × 10⁻³¹ kg. The obtained effective masses of holes m = 1.893 × 10⁻³¹ kg. The diffusion coefficient for both carriers (electrons and holes) is evaluated to be 84.71 cm²/s and 17.985 cm²/s respectively. The mean free time between collision is estimated to be τ_n = 1.7 × 10⁻²⁰s, and τ_p = 8.5 × 10⁻¹⁷s. The estimated diffusion length for electrons is found to be L_n = 1.2 × 10⁻⁹ cm and L_p = 3.9 × 10⁻⁸ cm.     

Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal

Electrical conductivity (σ) and Hall coefficient (R_H) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p-type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm² V⁻¹ s⁻¹ and could described by the law μ = aTⁿ (n = 1.6) in the low temperature range. In the high temperature range, adopting the law μ = bT^–m (as m = 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98 × 10⁷ cm⁻³.     

Growth,thermophysical and electrical properties of the nonlinear optical crystal BPO4

Bulk BPO₄ crystals have been successfully grown from high temperature solution of BPO₄, Li₂O, and MoO₃ in the molar ratio of 2.3:1:1.3 by the top‐seeded solution growth (TSSG) method using [101]^c orientation seeds. There are no visible scattering centers and impurity of Mo in the as‐grown BPO₄ crystals, whose optical homogeneity reaches up to 1.6×10^–5/cm. BPO₄ possesses a specific heat of 0.50–1.00 J·g^–1·K^–1 in the temperature range from 298 to 698 K and exhibits strong anisotropic thermal expansion behavior with α_a = 14.2 × 10^–6 K^–1 and α_c = ‐4.0 × 10^–7 K^–1. Moreover, the thermal conductivity coefficients are calculated to be κ_a = 62.4 W·m^–1·K^–1 and κ_c = 51.5 W·m^–1·K^–1, which are remarkably larger than those of some commonly used borates. The measured dielectric constants, ε_a and ε_c, are 4.8 and 6.1, respectively, and the ionic conductivity coefficients, σ_a = 4.3 × 10^–8 S/cm and σ_c = 9.5 × 10^–8 S/cm, are several orders of magnitude lower than that of LiB₃O₅ (LBO). (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Absorption and electrical conductivity of CaMoO4 crystals

The electrical conductivity σ of CaMoO₄ crystals was investigated between room temperature and 850°C. The mobility v_v and the diffusion coefficient D_v of the O⁻ ion vacancies have been derived from σ: v_vT = 3300 exp (−1.52 eV/kT) cm² K/Vs, D_v = (0.1…1) × exp (−1.52 eV/kT) cm²/s. An absorption occuring in crystals which are reduced or X-irradiated at low temperatures is dichroitic and caused by Mo⁵⁺ ions. For measurement in c direction the oscillator strength of the 680 nm absorption band is found to be about 0.1.     

Kinetics of crystal growth of strontium tungstate from solutions in sodium tungstate melts by continuous cooling

The crystallisation kinetics of strontium tungstate from unstirred saturated solutions in sodium tungstate melts was studied by continuous cooling from initial crystallisation temperatures T₀ = 1000° to 800°C to room temperature at cooling rates R_T = 0.67° to 3.3°C min⁻¹. The main crystal growth was diffusion rate-controlled; the final crystal growth was rate-controlled by the development rate of excess solute concentration. The estimated diffusion rate constant (k_D) values increased with cooling rates and initial crystallisation temperatures. They are higher than the rate constants for diffusion-controlled growth of calcium tungstate from sodium tungstate melts, but very much smaller than those for strontium tungstate from lithium chloride melts.     

Dynamics of twin layer widening in In-Pb crystals

The authors studied mobility of boundaries of plane-parallel twin layers in In-0.2 wt.% Pb and In-2 wt.% Pb crystals in the temperature range 290–373 K when stresses are applied τ/G = (1.35 – 7) × 10⁻⁶ (G is the shear modulus). They found that lead concentration increase as well as dislocation structure deterioration result in lower boundary velocity for a constant stress. In In-2 wt.% Pb crystals, the boundary velocity is well describable as V_n = V₀(τ) × × exp [ − ΔH (τ)/kT] where V₀(τ) = Ae^ατ/G (A = 10⁻³ cm/s, α = 1.1 × 10⁶) τ ΔH(τ) is the activation energy depending on the stress, ranging under these circumstances from 0.33 to 0.43 eV. At present it is difficult to interpret the results at hand. The analysis allows only to assume that the change in the boundary movement activation energy for impure crystals as against that for pure ones can be associated with the impurity effect on the structure of the intermediate zone between the twin and the matrix. The dependence of the pre-exponential factor on the stress is probably due to the effect of the internal long-range stress field on sources of twinning dislocations. Comparison with data for calcite and pure indium shows that twin boundary mobility parameters and their dependence on the stress are governed by the crystal type and defect structure.     

Crystal structures of four inclusion compounds of 2,2′-dithiosalicylic acid and tetraalkylammonium

Herein four inclusion compounds of 2,2′-dithiosalicylic acid and tetraalkylammonium, 2(CH₃)₄N⁺·C₁₄H₈O₄S₂^2?·H₂O (1), (C₂H₅)₄N⁺·C₁₄H₉O₄S₂^?·0.25H₂O(2), (n-C₃H₇)₄N⁺·C₁₄H₉O₄S₂^? (3) and (n-C₄H₉)₄N⁺·C₁₄H₉O₄S₂^?(4) are prepared and characterized by X-ray single crystal diffraction. As shown in the results, compounds 1 and 3 belong to orthorhombic crystal system with different space groups of P2₁2₁2₁ and Pca2₁, and 2 and 4 are monoclinic system with similar groups of P2₁/n and P2₁/c. The crystallography data are displayed below: 1: a = 10.5903(7) Å, b = 10.6651(7) Å, c = 21.9476(13) Å, V = 2478.9(3) ų, Z = 4, R₁ = 0.0359; 2: a = 8.13340(1) Å, b = 22.0741(3)Å, c = 13.2143(2)Å, β = 101.6360(1) °, V = 2323.70(6) ų, Z = 1, R₁ = 0.0385; 3: a = 15.7857(2) Å, b = 8.24830(1) Å, c = 20.2599(2) Å, V = 2637.94(5) ų, Z = 4, R₁ = 0.0308_degree4: a = 11.7476(2) Å, b = 17.1346(1) Å, c = 16.3583(3)Å, β = 109.4560(1) °, V = 3104.74(9)ų, Z = 4, R₁ = 0.0562. Interestingly, although the carbon chains of the guest templates vary from methyl group to butyl group, the host molecules of 2,2′-dithiosalicylic acid all construct the similar 2D hydrogen-bonded host layers with or without the existence of water molecules to contain the guest templates to yield analogous sandwich-like inclusion compounds. Obviously, although the guest templates will have certain effects on the ultimate formation of these crystal structures, the host molecule of 2,2′-dithiosalicylic acid is a controlling factor to form these four inclusion compounds.     

Crystal Data,Electrical Resisitivity and Mobility in Cu3In5Se9 and Cu3In5Te9 Single Crystals

X-ray powder diffraction data were obtained for Cu₃In₅Se₉ and Cu₃Te₉, which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu₃In₅Se₉, was identified to be n-type with a room temperature resistivity of 3 × 10³ Ω·cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu₃In₅Te₉ exhibits p-type conduction with a room temperature resistivity of 8.5 × 10⁻³ Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.     

Differential thermal analysis studies on the crystallization of strontium tungstate melts. Variation of rate constants with crystallization temperatures and cooling rates

Kinetics of strontium tungstate crystallization from sodium tungstate melts were studied in platinum crucibles (by DTA) by continuous cooling from initial crystallization temperatures T₀ = 800° to 1000° to below the eutectic temperature at cooling rates R_T = 0.67° to 3.3° min⁻¹. Heterogeneous nuclei first formed slowly onto metal platinate particles within the solution during induction periods (t ); the main crystal growth then started after the development of some exces solute concentration (ΔC ) at the induction temperature (T ). The actual growth after t was diffusion rate-controlled. The diffusion rate-constants (k_Dt) for growth after the induction periods along the major axis were estimated; the increased with T₀ and R_T. These values were higher than those for diffusion-controlled crystal growth of strontium tungstate from sodium tungstate melts in alumina crucibles but much smaller than the real diffusion rate-constants (k_Dl)_real.     

Crystal and molecular structure of 2-diazo-5-phenyl-cyclohexan-1,3-dione

M_r = 214.24, monoclinic space group P 2₁, a = 10.964(2), b = 5.870(2), c = 8.574(2) Å, β = 98.09(2)°, V = 546(1) ų, Z = 2, D_x = 1.302 Mg m⁻³, F(000) = 224, λ (MoKα) = 0.71069 Å, μ = 0.8 mm⁻¹. The crystal structure was determined by direct methods and refined by least-squares procedure to the discrepancy factor R = 0.034. M_r = 214.24, monokline Raumgruppe P 2₁, a = 10.964(2), b = 5.870(2), c = 8.574(2) Å, β = 98.09(2)°, V = 546(1) ų, Z = 2, D_x = 1.302 Mg m⁻³, F(000) = 224, λ(MoKα) = 0.71069 Å, μ = 0.8 mm⁻¹.     

The molecular and crystal structure of 2-oxo-1-pyrrolidine-acetamide

C₆H₁₀N₂O₂, P1 , a = 6,607(2) Å, b = 8,538(2) Å, c = 6,392(2) Å, α = 102,43(2)°, β = 91,11(2)°, y = 79,82(2)°, V = 349,1 ų, Z = 2, D_m = 1,36 g × cm⁻³, D_x = 1,35 g × × cm⁻³, MoKα radiation, λ = 1.71069 Å, μ(MoKα) = 1.11 cm⁻¹. The structure was solved by direct methods. The parameters were refined by full matrix least squares technique to a final R = 0.088 for 834 reflections with ∥F₀∥ > 4σ(F₀). The dihedral angle between the least-squares plane through the pyrrolidine ring and that through the acetamide group is 90.4°. The N H … O hydrogen bonds connect molecules to form bands parallel to the z axis.     

Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS_0.5Se_0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×10¹⁷ and 4.1×10¹⁶ cm^‐3, respectively, and an electron effective mass of 0.41 m₀. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.     

Crystal and Molecular Structure of Tosyl Pyrrolidine-2-Methanol (C12H17SO3N)

C₁₂H₁₇SO₃N, M_r = 255.33, Orthorhombic, P2₁2₁2₁, a = 11.703(1) Å, b = 14.797(3) Å, c = 14.971(2) Å, V = 2592.52 ų, Z = 8, D_m = 1.309 Mgm⁻³, D_c = 1.308 Mgm⁻³, mμ = 21.57 cm⁻¹, F(000) = 1088, T = 290 K, final R = 0.080 for 2416 unique reflections. There are two crystallographically independent molecules in the unit cell of the title compound.     

Determination of Nitrogen Concentration in GaP Epitaxial Layers by Two Independent Methods

The nitrogen concentration in GaP is determined by optical absorption in the A-line at T = 77 K. The concentration of the isolated nitrogen atoms is given for T = 77 K by the modified LIGHTOWLERS' relation [N_A] cm⁻³ = 8.2 · 10¹⁴ phα_max, where α is measured in cm⁻³, h in meV. p is a dimensionless line shape factor. It is shown that at higher N concentrations considering only the A-line absorption the impurity density is underestimated because the nitrogen atoms included in NN_i pairs give no contribution to the absorption. The measurements have been made in the range from [N] = 5 · 10¹⁶…︁ 10¹⁹ cm⁻³ in layers grown by vapour phase epitaxy. The results are compared with nitrogen concentrations obtained by precision lattice parameter measurements. The change of the lattice parameter is calculated using VEGARD's law. The good agreement between the nitrogen densities obtained by two different independent methods reveals (i) that the LIGHTOWLERS' calibration factor is valid also at higher N-concentrations and (ii) that the nitrogen atoms are predominantly incorporated into P-lattice sites.     

Impurity band conduction effects in liquid phase epitaxial Te-doped GaP grown from tin solution

GaP layers were grown by liquid phase epitaxy from tin solution on semi-insulating GaAs substrates with various amounts of Te added to the melt (x_Te = 10⁻⁴ …︁ 3 · 10⁻²). The Sn and Te concentrations in the layers were determined by chemical analysis as function of x. An analysis of the electrical measurements shows that the carrier transport in the layers is essentially determined by impurity band conduction effects.