Wetting and superhydrophobic properties of PECVD grown hydrocarbon and fluorinated-hydrocarbon coatings

Wetting characteristics of micro-nanorough substrates of aluminum and smooth silicon substrates have been studied and compared by depositing hydrocarbon and fluorinated-hydrocarbon coatings via plasma enhanced chemical vapor deposition (PECVD) technique using a mixture of Ar, CH₄ and C₂F₆ gases. The water contact angles on the hydrocarbon and fluorinated-hydrocarbon coatings deposited on silicon substrates were found to be 72° and 105°, respectively. However, the micro-nanorough aluminum substrates demonstrated superhydrophobic properties upon coatings with fluorinated-hydrocarbon providing a water contact angle of ∼165° and contact angle hysteresis below 2° with water drops rolling off from those surfaces while the same substrates showed contact angle of 135° with water drops sticking on those surfaces. The superhydrophobic properties is due to the high fluorine content in the fluorinated-hydrocarbon coatings of ∼36 at.%, as investigated by X-ray photoelectron spectroscopy (XPS), by lowering the surface energy of the micro-nanorough aluminum substrates.     

Vapour phase formation of amino functionalised Si3N4 surfaces

Self-assembled monolayer (SAM) formation of silanes on SiO₂ surfaces has been extensively studied. However, SAMs formed on silicon nitride (Si₃N₄) substrates have not been explored to the same level as SiO₂, even though they are of technological interest with a view to the chemical modification of microelectromechanical systems (MEMS). Therefore, this article presents the formation and characterisation of 3-aminopropyltrimethoxysilane (APTMS) SAMs on Si₃N₄ substrates from solution phase and vapour phase, compared to the well characterised APTMS SAMs formed on SiO₂ surfaces. Contact angle, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and ellipsometric data indicate the formation of APTMS SAMs (0.55 nm ellipsometric thickness) after 60 min immersion of either SiO₂ or Si₃N₄ substrates in APTMS solution (0.5 mM in EtOH). By comparison Si₃N₄ substrates exposed to APTMS vapour, at 168 mbar for 60 min, result in the formation of the equivalent of a bi or trilayer of APTMS.     

Secondary ion species containing nitrogen atoms from plasma-enhanced chemical vapor deposited silicon oxide films on silicon

Secondary ion species from plasma-enhanced chemical vapor deposited (PECVD) SiO₂ films have been investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Comparative studies of PECVD SiO₂ films prepared using a mixture of SiH₄/N₂O reaction gas at 400 °C with thermally oxidized SiO₂ films grown at 900 °C were carried out in the mid-range mass spectra from 95 to 165 amu. Small amounts of ion species containing nitrogen atoms, including Si₂O₂N⁺, Si₃O₂N⁺and Si₃O₃N⁺, were detected in the SiO₂ bulk from the PECVD SiO₂ films. Furthermore, large amounts of Si₃O₂N⁺ and Si₂O₃N⁻ were found at the interface between silicon and the SiO₂ films. Depth analysis showed that the intensity peak shapes of these ion species containing nitrogen atoms at the interface were closely coincident with those of Si₃O₃⁺ corrected by subtracting the influence of the SiO₂ matrix. The variation in the spectra of these ion species clearly indicates that two types of structures of oxynitride exist for the PECVD SiO₂ films in the SiO₂ bulk films and at the interface. These are likely produced by the reaction of reactive gas with SiO₂ and silicon surfaces where dangling bonds of silicon may exist in the different form.     

Preferred orientations in nano-gold/silica/silicon interfaces

Gold in contact with silicon substrates Si(1 0 0), Si(1 1 1), and SiO₂ is studied by thermal evaporation and annealing in N₂ using the modified sphere-plate technique. The final orientation distribution of crystalline Au films grown on Si substrate systems that incorporate a native amorphous oxide layer of silica and Au on amorphous silica (SiO₂ glass) substrates is influenced by preferred orientations and twinning. Experimental evidence suggests that the orientation of Au{1 1 1} close packed planes (multiply twinned) was found to be of low-energy as the annealing temperature was increased to 530 °C and 920 °C. Additional orientations were observed for Au{1 0 0} on Si(1 0 0) substrates and Au{1 0 0}, {1 1 0}, and {3 1 1} on SiO₂ substrates. After annealing at 920 °C the size distribution of the gold particles was determined to be within the range of 20-800 nm while the morphology of gold surface appears spherical to faceted in character. These results show similarities to recent findings for smaller nano-size 1D particles, islands and thin Au films on silicon annealed over lower temperature ranges.     

Electron-stimulated processes in boron nitride-based ceramics

The low-energy electron radiation resistance of boron nitride-based BN + Si₃N₄ and BN + SiO₂ ceramics proposed as a construction material for ion space engines was studied. It was shown that a reduced silicon phase is formed on the BN + Si₃N₄ ceramics surface in the high-temperature region (～900 K), which results from material thermal destruction. The BN + SiO₂ ceramics exhibits high thermal stability and is not prone to destruction due to electron-stimulated oxygen desorption (the cross section of this process does not exceed 10^?20 cm²). It is preferable to use such ceramics as a construction material. Based on the results obtained, some models were proposed that explain variations in the erosion rate of ceramic units of ion engines under electron and ion irradiation.     

Electrons diffusion study on the nitrogen-doped nanocrystalline diamond film grown by MPECVD method

Nitrogen-doped nanocrystalline diamond (NNCD) films were deposited onto p-type silicon substrates with three different layer structures: (i) directly onto the silicon substrate (NNCD/Si), (ii) silicon with undoped nanocrystalline diamond layer which was deposited in the same way as the above mentioned NNCD by the recipe Ar/CH₄/H₂ with a ratio of 98%/1%/1% (NNCD/NCD/Si), and (iii) silicon wafer with 100 nm thickness SiO₂ layer (NNCD/SiO₂/Si). Atomic force microscopy (AFM), X-ray diffraction (XRD) and Raman spectroscopy were employed to characterize the morphology and microstructure of the as-grown nitrogen-doped diamond films. Silver colloid/silver contacts were made at to measure the current-voltage (I-V) characteristics for the three different structures. Electrons from a CVD reactor hydrogen plasma diffuse toward the p-type silicon substrate during a deposition process under the high temperature (∼800 °C). The study concluded that the SiO₂ layer could effectively prevents the diffusion of electrons.     

Controlled growth of superhydrophobic films by sol-gel method on aluminum substrate

Superhydrophobic surface was prepared by sol-gel method on aluminum substrate via immersing the clean pure aluminum substrate into the solution of zinc nitrate hexahydrate (Zn(NO₃)₂·6H₂O) and hexamethylenetetraamine (C₆H₁₂N₄) at different molar ratios and unchanged 0.04 mol/L total concentration, then heated at 95 °C in water bath for 1.5 h, subsequently modified with 18 alkanethiols or stearic acid. When the molar ratios of Zn(NO₃)₂·6H₂O and C₆H₁₂N₄ were changed from 10:1 to 1:1 the contact angle was higher than 150°. The best prepared surface had a high water contact angle of about 154.8°, as well as low angle hysteresis of about 3°. The surface of prepared films using Zn(NO₃)₂·6H₂O and C₆H₁₂N₄ composed of ZnO and Zn-Al LDH, and Al. SEM images of the film showed that the resulting surface exhibits different flower-shaped wurtzite zinc oxide microstructure and porous Zn-Al LDH. The special flowerlike and porous architecture, along with the low surface energy leads to the surface superhydrophobicity.     

Double layer oxidation resistant coating for carbon fiber reinforced silicon carbide matrix composites

Double layer coatings, with celsian-Y₂SiO₅ as inner layer and Y₂Si₂O₇ as outer layer, were prepared by microwave sintering on the surface of carbon fiber reinforced silicon carbide matrix composite. Both celsian, Y₂SiO₅ and Y₂Si₂O₇ were synthesized by in situ method using BAS glass, Y₂O₃ and SiO₂ as staring materials. The sintering temperature was 1500 °C, and little damage was induced to the composite. The composition and micrograph of the fired coating were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The oxidation and thermal shock resistance of samples with doubled-layered coating were characterized at 1400 °C in air. After 150 min oxidation and thermal cycling between 1400 °C and room temperature for 15 times, the weight loss of double layer-coated sample was 1.22% and there were no cracks in the coating.     

Evaporation-coupled wetting of ZrO2 by molten Mg in Ar atmosphere

The wetting behaviors of molten Mg drops on polycrystalline ZrO₂ substrate surfaces were studied in a controlled Ar atmosphere at 948–1173 K using an improved sessile drop method. The ZrO₂ substrate is virtually not wetted by molten Mg at temperatures below 1173 K. The wetting and evaporation stages according to different variation behaviors of contact angle, contact diameter and drop height were identified. Six representative modes were proposed to describe the evaporation-coupled wetting behaviors during different stages. The competitions between surface oxidation, chemical reaction and drop evaporation were discussed to account for the mechanisms for various wetting behaviors at different temperatures. The chemical reaction leads to the formation of more wettable MgO phase at the interface; however, it yields only an inconspicuous improvement in the wetting due to enhanced Mg evaporation.     

X-ray photoemission and X-ray absorption studies of Hf-silicate dielectric layers

Photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) measurements have been performed on HfSi_xO_y and HfSi_xO_yN_z dielectric layers, which are potential candidates as high-k transistor gate dielectrics. The hafnium silicate layers, 3-4 nm thick, were formed by codepositing HfO₂ and SiO₂ (50%:50%) by MOCVD at 485 °C on a silicon substrate following an IMEC clean. Annealing the HfSi_xO_y layer in a nitrogen atmosphere at 1000 °C resulted in an increase in the Si⁴⁺ chemical shift from 3.5 to 3.9 eV with respect to the Si⁰ peak. Annealing the hafnium silicate layer in a NH₃ atmosphere at 800 °C resulted in the incorporation of 10% nitrogen and the decrease in the chemical shift between the Si⁴⁺ and the Si⁰ to 3.3 eV. The results suggest that the inclusion of nitrogen in the silicate layer restricts the tendency of the HfO₂ and the SiO₂ to segregate into separate phases during the annealing step. Synchrotron radiation valence band photoemission studies determined that the valence band offsets were of the order of 3 eV. X-ray absorption measurements show that the band gap of these layers is 4.6 eV and that the magnitude of the conduction band offset is as little as 0.5 eV.     

Characterization of ion species of silicon oxide films using positive and negative secondary ion mass spectra

Secondary ion species of silicon oxide films have been investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Characterization of thermally grown SiO₂ films on silicon has been performed. A diagram showing secondary ion spectra of SiO₂ films in both positive and negative polarities indicates the pattern of change in polarities and intensities of ion species from SiO⁺ to Si₅O₁₁⁻. The ions mostly change from positive to negative polarity between Si_nO_2n−1 and Si_nO_2n. Ion peaks with the strongest intensities in the respective cluster ions correspond to the Si_nO_2n+1 negative ion. Intensities of ion species of Si_nO_2n+2 appear negligibly small. Ion species of Si₃O⁺, Si₃O₂⁺ and Si₃O₃⁺ have been found at the interface between silicon and SiO₂ films. The intensity patterns of these ion species compared to those of SiO₂ films indicate that most of these species are not emitted from the SiO₂ films, but likely from the SiO structures.     

The influence of temperature (20-1000 °C) on binary mixtures of solid solutions of CH3COOLi·2H2O-MgHPO4·3H2O

Thermally induced phase transitions (20-1000 °C) in the substrates and binary mixtures of CH₃COOLi·2H₂O(1)-MgHPO₄·3H₂O(11) have been analysed. Changes taking place on dehydration and thermal dissociation of binary mixtures prepared with percent molar ratios of 90-10% were studied by differential thermal analysis (TG, DTG, DTA), IR-spectroscopy and WAXS.The above-mentioned substrates changed their structure when heated for 1 h at 500 or 1000 °C. CH₃COOLi·2H₂O(1) (ID: 23-1171) changed the structure at 500 °C to that of Li₂CO₃ (ID: 22-1141), while at 1000 °C the structure was impossible to analyse as the compound reacted both with porcelain and with platinum (crucible materials). MgHPO₄·3H₂O(11) (Newberyite, ID: 35-780, 19-762) changed its structure at 500 °C to amorphous phase and at 1000 °C to Mg₂P₂O₇ (ID: 32-626).The following compounds were assayed in the respective binary mixtures heated at 500 °C for 1 h: 70% (1)-30%(11): LiMgPO₄ (ID: 18-735), MgO (ID: 4-829); 50%(1)-50%(11): LiMgPO₄ (ID: 18-735), Li₃PO₄ (ID: 25-1030); 30%(1)-70%(11): LiMgPO₄ (ID: 32-574); binary mixtures heated at 1000 °C contained the following compounds: 70%(1)-30%(11): LiMgPO₄ (ID: 32-574,18-735), Li₃PO₄ (ID: 15-760,25-1030), MgO (ID: 4-829); 50%(1)-50%(11): LiMgPO₄ (ID: 32-574, 18-735), MgO (ID: 4-829); 30%(1)-70%(11): LiMgPO₄ (ID: 18-735, 32-574), Mg₂P₂O₇ (ID: 22-1152, 8-38), Li₄SiO₄ (37-1472).     

c-Axis orientation control of YBa2Cu3O7−x films grown on inclined-substrate-deposited MgO-buffered metallic substrates

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on non-textured metal substrates with inclined-substrate-deposited (ISD) MgO as template. The biaxial texture feature of the films was examined by X-ray pole-figure analysis, φ-scan, and 2θ-scan. A tilt angle of 32° of the MgO[001] with respect to the substrate normal was observed. Epitaxial growth of YBCO films with c-axis tilt angle of 32° with respect to the substrate normal was obtained on these substrates with SrTiO₃(STO) as buffer layer. Whereas, by choosing yttria-stabilized ZrO₂ and CeO₂ instead of STO as buffer layer, a c-axis untilted YBCO film was obtained. Higher values of T_c=91 K and J_c=5.5×10⁵ A/cm² were obtained on the c-axis untilted YBCO films with 0.46 μm thickness at 77 K in zero field. Comparative studies revealed a unique role of CeO₂ in controlling the orientation of the YBCO films grown on ISD-MgO buffered metal substrates.     

Fabrication of superhydrophobic coating via a facile and versatile method based on nanoparticle aggregates

Herein, we report a facile and low cost method for the fabrication of superhydrophobic surface via spin coating the mixture of polydimethylsiloxane precursor (PDMS) and silicon dioxide (SiO₂) nanoparticles. The surface hydrophobicity can be well tuned by adjusting the weight percent of PDMS and SiO₂. The water contact angle (WCA) can increase from 106.8 ± 1.2° on PDMS film to 165.2 ± 2.3° on PDMS/SiO₂ coating, companying with a change from adhering to rolling which was observed from tilting angle (TA) characterization. Multi-scale physical structures with SiO₂ nanoparticle aggregates and networks of SiO₂ nanoparticle aggregates are characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM), and they can be observed more clearly from the AFM images treated with software (WSxM). Then the relationship between surface hydrophobicity and structures is further discussed based on Wenzel and Cassie models, indicating that the appearance of networks of nanoparticle aggregates is important in the Cassie state. The superhydrophobic coating can keep the superhydrophobicity at least for one month under environment conditions and readily regenerate after mechanical damage. Additionally, the superhydrophobic coating can be fabricated using other methods including dip coating, spray coating and casting. Thus, a large area of superhydrophobic coatings can be easily fabricated. Therefore the range of possible applications for these facile and versatile methods can be expanded to various actual conditions.     

Dense and high-hydrophobic rutile TiO2 nanorod arrays

Dense and well-oriented rutile TiO₂ nanorod arrays were synthesized on a titanium substrate using the organic compound dibutyltin dilaurate as the oxygen source in the oxidation of Ti at 850 °C. The influence of temperature on the nanostructured TiO₂ formation and the effect of the TiO₂ structures on their wettability were also investigated. Polycrystalline TiO₂ grains were formed at 800 °C; in contrast, TiO₂ micro-whiskers were grown on the Ti substrate at 900 °C. The measurement of the water contact angle shows that the wetting property of the TiO₂ films strongly depends on their surface structure. The surface of the dense well-oriented nanorod arrays is highly hydrophobic with a water contact angle of 130 °C. This study has demonstrated that the direct oxidation of Ti substrate using an organic oxygen source is a promising method for fabrication of large scale, uniform and well-aligned TiO₂ nanorod arrays on titanium substrates. PACS 81.16.-Be; 81.20.ka; 82.4c.Cc; 68.37.Hk     

First nucleation steps during deposition of SiO2 thin films by plasma enhanced chemical vapour deposition

The initial nucleation stages during deposition of SiO₂ by remote plasma enhanced chemical vapour deposition (PECVD) have been monitored by XPS inelastic peak shape analysis. Experiments have been carried out on two substrates, a flat ZrO₂ thin film and a silicon wafer with a native silicon oxide layer on its surface. For the two substrates it is found that PECVD SiO₂ grows in the form of islands. When the SiO₂ particles reach heights close to 10 nm they coalesce and cover completely the substrate surface. The particle formation mechanism has been confirmed by TEM observation of the particles grown on silicon substrates. The kinetic Monte Carlo simulation of the nucleation and growth of the SiO₂ particles has shown that formation of islands is favoured under PECVD conditions because the plasma species may reach the substrate surface according to off-perpendicular directions. The average energy of these species is the main parameter used to describe their angular distribution function, while the reactivity of the surface is another key parameter used in the simulations.     

Wetting and evaporation behaviors of molten Mg on partially oxidized SiC substrates

The wetting and evaporation behaviors of molten Mg drops on pressureless-sintered SiC surfaces were studied in a flowing Ar atmosphere at 973-1173 K by an improved sessile drop method. The initial contact angles are between 83° and 76°, only mildly depending on temperature. The formation of a ridge at the triple junction as a result of reaction between molten Mg and the SiO₂ film on the SiC surface pins the triple line and leads to a constant contact diameter mode during the entire evaporation process. Moreover, the diffusion coefficients of the Mg vapor at different temperatures were evaluated based on a simple model.     

Effect of sputtering anisotropic ejection on the optical properties and residual stress of Nb2O5 thin films

The effect of sputtering anisotropic ejection on the optical properties and internal stress of niobium pentoxide (Nb₂O₅) films prepared by ion-beam sputtering deposition (IBSD) was investigated experimentally. Thin films were deposited on unheated BK7 glass substrates and silicon wafers at different ejection angles surrounding a metal target. The ejection angles varied from 0° to 75° in increments of 15° for each substrate. It was found that the optical constants of the Nb₂O₅ films were significantly influenced by the sputtering ejection angle. The surface roughness and residual stress in the Nb₂O₅ thin films were also found to vary with the ejection angle. In this work, Nb₂O₅ films had a higher refractive index, lower absorption, lower stress and lower roughness when films deposited at an ejection angle of 30°.     

Structure of Na2O·MO·SiO2·CaF2 (M=Mg,Ca) oxyfluoride glasses

(9−x)CaO·xMgO·15Na₂O·60SiO₂·16CaF₂(x=0, 2, 4, 6, and 9) oxyfluoride glasses were prepared. Utilizing the Raman scattering technique together with ²⁹Si and ¹⁹F MAS NMR, the effect of alkaline metal oxides on the Q species of glass was characterized. Raman results show that as magnesia is added at the expense of calcium oxide, the disproportional reaction Q³→Q⁴+Q² (Qⁿ is a SiO₄ tetrahedron with n bridging oxygens) prompted due to the high ionic field strength of magnesia, magnesium oxide entered into the silicate network as tetrahedral MgO₄, and removed other modifying ions for charge compensation. This reaction was confirmed by ²⁹Si MAS NMR. ¹⁹F MAS NMR results show that fluorine exists in the form of mixed calcium sodium fluoride species in all glasses and no Si–F bonds were formed. As CaO is gradually replaced by MgO (x=6, 9), a proportion of the magnesium ions combines with fluorine to form the MgF⁺ species. Meanwhile, some part of Na⁺ ions complex F⁻ in the form of F–Na(6).     

Structure, morphology and optical properties of SiO2−x thin films prepared by plasma-assisted pulsed laser deposition

The amorphous silicon oxide SiO_2−x thin films were prepared by the plasma-assisted pulsed laser deposition (PLD) method. X-ray diffraction spectrometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-VIS-NIR scanning spectrophotometry and ellipsometry were used to characterize the crystallinity, microscopic morphology and optical properties of obtained thin films. The influences of substrate temperatures, oxygen partial pressures and oxygen plasma assistance on the compositions of silicon oxide (SiO_2−x) thin films were investigated. Results show that the deposited thin films are amorphous and have high surface quality. Stoichiometric silicon dioxide (SiO₂) thin film can be obtained at elevated temperature of 200 °C in an oxygen plasma-assisted atmosphere. Using normal incidence transmittance, a novel and simple method has been proposed to evaluate the value of x in transparent SiO_2−x thin films on a non-absorbing flat substrate.