Optical vibration modes and electron－phonon interaction in ternary mixed crystals of polar semiconductors

Optical vibrations of the lattice and the electron－phonon interaction in polar ternary mixed crystals are studied in the framework of the continuum model of Born and Huang and the random-element-isodisplacement model. A normal-coordinate system to describe the optical vibration in ternary mixed crystals is correctly adopted to derive a new Fr?hlich-like Hamiltonian for the electron－phonon interaction including the unit-cell volume variation influence. The numerical results for the phonon modes, the electron－phonon coupling constants and the polaronic energies for several typical materials are obtained. It is verified that the nonlinearity of the electron－phonon coupling effects with the composition is essential and the unit-cell volume effects cannot be neglected for most ternary mixed crystals.     

Surface phonon–polaritons in rectangular quantum wires of polar ternary mixed crystals

In this paper, the dispersion relations of surface phonon–polaritons in freestanding rectangular quantum wire systems of polar ternary mixed crystals are derived. The numerical calculations for Al_xGa_1−xAs and Zn_xCd_1−xSe quantum wire systems are performed. The results reveal that the frequencies of surface phonon–polariton modes are sensitive to the geometric structures of the quantum wires, the wave-vectors in z-direction, and the compositions of the ternary mixed crystal materials. The effects of the “two-mode” and “one-mode” behaviors of the ternary mixed crystals on the surface phonon–polariton modes are also discussed.     

Entanglement evolution of three-qubit mixed states in multipartite cavity—reservoir systems

We analyze the multipartite entanglement evolution of three-qubit mixed states composed of a GHZ state and a W state.For a composite system consisting of three cavities interacting with independent reservoirs,it is shown that the entanglement evolution is restricted by a set of monogamy relations.Furthermore,as quantified by the negativity,the entanglement dynamical property of the mixed entangled state of cavity photons is investigated.It is found that the three cavity photons can exhibit the phenomenon of entanglement sudden death(ESD).However,compared with the evolution of a generalized three-qubit GHZ state which has the equal initial entanglement,the ESD time of mixed states is later than that of the pure state.Finally,we discuss the entanglement distribution in the multipartite system,and point out the intrinsic relation between the ESD of cavity photons and the entanglement sudden birth of reservoirs.     

On the binding energies of excitons in polar quantum well structures in a weak electric field

The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.     

Calculating the dielectric anisotropy of nematic liquid crystals: a reinvestigation of the Maier——Meier theory

This paper investigates the average dielectric permittivity (\overline ε ) in the Maier--Meier theory for calculating the dielectric anisotropy (Δε) of nematic liquid crystals. For the reason that \overline ε of nematics has the same expression as the dielectric permittivity of the isotropic state, the Onsager equation for isotropic dielectric was used to calculate it. The computed \overline ε shows reasonable agreement with the results of the numerical methods used in the literature. Molecular parameters, such as the polarizability and its anisotropy, the dipole moment and its angle with the molecular long axis, were taken from semi-empirical quantum chemistry (MOCPAC/AM1) modeling. The calculated values of Δε according to the Maier--Meier equation are in good agreement with the experimental results for the investigated compounds having different core structures and polar substituents.     

Properties of ground state and anomalous quantum fluctuations in one-dimensional polaron-soliton systems—the effects of electron-two-phonon interaction and non-adiabatic quantum correlations

Based on the Holstein model Hamiltonian of one-dimensional molecular crystals, by making use of the expansion approach of the correlated squeezed-coherent states of phonon instead of the two-phonon coherent state expansion scheme, the properties of the ground state and the anomalous quantum fluctuations are investigated in a strongly coupled electron-phonon system with special consideration of the electron-two-phonon interaction. The effective renormalization (αi) of the displacement of the squeezed phonons with the effect of the squeezed-coherent states of phonon and both the electron-displaced phonon and the polaron-squeezed phonon correlations have been combined to obtain the anomalous quantum fluctuations for the corrections of the coherent state. Due to these non-adiabatic correlations, the effective displacement parameter αi is larger than the ordinary parameter α (0) i . In comparison with the electron-one-phonon interaction (g) corrected as αig, we have found the electron-two-phonon interaction (g1) corrected as αi2 g1 is enhanced significantly. For this reason, the ground state energy (E(2) 0 ) contributed by the electron-two-phonon interaction is more negative than the single-phonon case (E(1) 0 ) and the soliton solution is more stable. At the same time, the effects of the electron-two-phonon interaction greatly increase the polaron energy and the quantum fluctuations. Furthermore, in a deeper level, we have considered the effect of the polaron-squeezed phonon correlation (f-correlation). Since this correlation parameter f > 1, this effect will strengthen the electron-one and two-phonon interactions by fαig and f2αi2 g1, respectively. The final results show that the ground state energy and the polaron energy will appear more negative further and the quantum fluctuations will gain further improvement.     

Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)N quantum well operating at 1.55 μm

In this paper, we theoretically study the effects of doping concentration NDand an external electric field on the intersubband transitions in InxAl(1-x)N/InyGa(1-y)N single quantum well by solving the Schr¨odinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions(E2- E1),(E3- E1), and(E3- E2) are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration NDexists for which the transition 0.8 eV(1.55 μm) is carried out. Finally, the dependence of the optical absorption α13(ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.     

Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

We investigate the band structure of a compressively strained In(Ga)As/In 0.53 Ga 0.47 As quantum well (QW) on an InP substrate using the eight-band k · p theory.Aiming at the emission wavelength around 2.33 μm,we discuss the influences of temperature,strain and well width on the band structure and on the emission wavelength of the QW.The wavelength increases with the increase of temperature,strain and well width.Furthermore,we design an InAs /In 0.53 Ga 0.47 As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.     

Propagation and interaction of ion-acoustic solitary waves in a quantum electron-positron-ion plasma

This paper discusses the existence of ion-acoustic solitary waves and their interaction in a dense quantum electron-positron-ion plasma by using the quantum hydrodynamic equations.The extended Poincar’e-Lighthill-Kuo perturbation method is used to derive the Korteweg-de Vries equations for quantum ion-acoustic solitary waves in this plasma.The effects of the ratio of positrons to ions unperturbation number density p and the quantum diffraction parameter H e (H p) on the newly formed wave during interaction,and the phase shift of the colliding solitary waves are studied.It is found that the interaction between two solitary waves fits linear superposition principle and these plasma parameters have significantly influence on the newly formed wave and phase shift of the colliding solitary waves.The investigations should be useful for understanding the propagation and interaction of ion-acoustic solitary waves in dense astrophysical plasmas (such as white dwarfs) as well as in intense laser-solid matter interaction experiments.     

Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model

In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.     

纤锌矿氮化物量子阱中光学声子模的三元混晶效应

本文先比较了几种常用方法(修正的无规元素等位移模型、虚晶近似和简化相干势近似等)对纤锌矿三元混晶体声子频率的拟合结果,再选用与实验数据接近的拟合方法,结合介电连续和单轴晶体模型导出含纤锌矿三元混晶In_xGa_1－xN和Al_xGa_1－xN单量子阱各类光学声子模的色散关系,进一步分析了声子模随组分的变化. 结果表明,修正的无规元素等位移模型对单模性纤锌矿     

三元混晶四层系统的表面和界面声子极化激元

运用改进的无规元素等位移模型和玻恩-黄近似,结合电磁场的麦克斯韦方程和边界条件,研究了真空/极性二元晶体薄膜/极性三元混晶薄膜/极性二元晶体衬底四层系统的表面和界面声子极化激元.以AlxGa1-xAs/GaAs和ZnxCd1-xSe/ZnSe为例,获得了表面和界面声子极化激元模的色散关系以及表面模和界面模的频率随混晶组分和薄膜厚度的变化关系.结果表明,三元混晶四层异质结系统中存在七支表面和界面声子极化激元模,且这七支表面模和界面模的频率随混晶组分和薄膜厚度呈非线性变化,三元混晶的"单模"和"双模"性也在色散曲线中得到了很好的体现.     

Surface and interface phonon-polaritons in freestanding quantum well wire systems of polar ternary mixed crystals

The surface and interface phonon-polaritons in freestanding rectangular quantum well wire systems consisting of polar ternary mixed crystals are investigated in the modified random-element-isodisplacement model and the Born–Huang approximation, based on the Maxwell's equations with the boundary conditions. The numerical results of the surface and interface phonon-polariton frequencies as functions of the wave-vector, geometric structure, and the composition of the ternary mixed crystals in GaAs/Al_xGa_1−xAs and Zn_xCd_1−xSe/ZnSe quantum well wire systems are obtained and discussed. It is shown that there are 10 and 8 branches of surface and interface phonon-polaritons in the two quantum well wire systems respectively. The effects of the “two-mode” and “one-mode” behaviors of the ternary mixed crystals on the surface and interface phonon-polariton modes are shown in the dispersion curves.     

Exciton--polaritons in ternary mixed crystals

In this paper the bulk exciton polaritons in ternary mixed crystals (TMCs) are investigated in the Born--Huang approximation. The numerical results of the polariton frequencies as functions of the wave-vector and the compositions for ternary mixed crystals Al电震荡 三重混合晶体 激子 电磁学polariton, exciton, ternary mixed crystalProject supported partly by PhD Progress Foundation of Higher Education Institutions of China (Grant No~20040126003) and the Natural Science Foundation of Inner Mongol of China (Grant No~200408020101).2006-10-08In this paper the bulk exciton polaritons in ternary mixed crystals （TMCs） are investigated in the Born-Huang approximation. The numerical results of the polariton frequencies as functions of the wave-vector and the compositions for ternary mixed crystals AlxGa1-xAs, CdxZn1-xSe, and AlxGa1-xN are obtained and discussed. The new dispersion characteristics for exciton-polaritons in TMC systems are found in comparison with binary crystals. The splitting of the two branches of exciton-polariton frequencies varies nonlinearly with the composition of TMCs and has a minimum in the long-wavelength range.     

Interface phonon assisted transition in double quantum well

A detailed calculation of interface phonon assisted electron intersubband transition in double GaAs/AlGaAs quantum well structure is presented. Our calculation concentrates on the lowest two subbands which can be designed to be in resonance with a given interface phonon mode. Various phonon mode profiles display quasi-symmetric or quasi-antisymmetric shapes. The quasi-antisymmetric phonon modes give rise to much larger transition rates than those assisted by quasi-symmetric ones. The transition rate reaches a maximum when the subband separation coincides with a given phonon mode energy. The calculation procedure presented here can be easily applied to the design and simulation of other low dimensional semiconductor structures, such as quantum cascade lasers. Received 22 December 2002 Published online 23 May 2003 RID="a" ID="a"e-mail: bhwu@263.net     

High-fidelity quantum memory realized via Wigner crystals of polar molecules

The collective excitations of spin states of an ensemble of polar molecules are studied as a candidate for high-fidelity quantum memory. To avoid the collisional properties of the molecules, they are arranged in dipolar crystals under one or two dimensional trapping conditions. We calculate the lifetime of the quantum memory by identifying the dominant decoherence mechanisms and estimating their effects on gate operations when a molecular ensemble qubit is transferred to a microwave cavity.     

Eigenstate localization in an asymmetric coupled quantum well pair

Optical pumping of a type-I/type-II coupled asymmetric quantum well pair induces a spatially separated two dimensional charge carriers plasma in the well’s wide and narrow parts. Treating the two coupled wells as a single system we find that the eigenstate probability distribution localizes exclusively either in the wide or the narrow parts of the well pair. The energy of the narrow-well localized state determines the minimal excitation energy for optically pumped charge carriers separation. In a previously used design [Guliamov et al., PRB 64 035314 (2001)] this narrow well transition energy was measured to correspond to a wavelength of 646 nm. We propose modifications to the design suggested earlier with the purpose of pushing up the energy required for the optical pumping of the two-dimensional plasma into the green and blue regions of the visible spectrum.     

Confinement of polar optical phonons in quasi-one-dimensional Wurtzite GaN-based quantum well wires: propagating and half-space phonon modes

With the aid of the macroscopic dielectric continuum and Loudon’s uniaxial crystal models, the propagating (PR) and half-space (HS) optical phonon modes and corresponding Fröhlich-like electron-phonon interaction Hamiltonians in a quasi-one-dimensionality (Q1D) wurtzite quantum well wire (QWW) structure are derived and studied. Numerical calculations on a wurtzite GaN/A_l0.15Ga_0.85N QWW are performed, and discussion is focused mainly on the dependence of the frequency dispersions of PR and HS modes on the free wave-number k _z in the z-direction and on the azimuthal quantum number m. The calculated results show that, for given k _z and m, there usually exist infinite branches of PR and HS modes in the high-frequency range, and only finite branches of HS modes in the low-frequency range in wurtzite QWW systems. The reducing behaviors of the PR modes to HS modes, and of the HS mode to interface phonon mode have been observed clearly in Q1D wurtzite heterostructures. Moreover, the dispersive properties of the PR and HS modes in Q1D QWWs have been compared with those in Q2D quantum well structures. The underlying physical reasons for these features have also been analyzed in depth.     

Localized interface phonon polaritons in superlattice with a structural defect consisting of ternary mixed crystal

Using a transfer matrix method, we investigate the existence and characteristics of the localized interface phonon-polariton modes (IPPMs) in superlattice (SL) with a structural defect consisting of ternary mixed crystal (Al_xGa_1−xAs). The results show that the introduction of two-mode behavior of the ternary mixed crystal leads to the rich and varied localized IPPMs spectra with new features. The characteristics and positions of the localized IPPMs in the Reststrahlen region are strongly dependent on the concentration x of the ternary mixed crystal. Moreover, it is found that the localized IPPMs are sensitive to the thicknesses of the defect and constituent layers as well as to the transverse wavenumber q_∥.     

纤锌矿结构ZnO/Mg_xZn_(1-x)O量子阱中带间光吸收的尺寸效应和三元混晶效应

对于纤锌矿结构ZnO/MgxZn1-xO有限深单量子阱结构,考虑内建电场、导带弯曲及材料掺杂对实际异质结势的影响,利用有限差分法和自洽法数值求解Schr?dinger方程和Poisson方程,获得电子(空穴)的本征能级和本征波函数.进而,采用费米黄金法则讨论带间光吸收的尺寸效应和三元混晶效应.结果表明:三元混晶材料MgxZn1-xO中Mg组分的增加会增强垒层和阱层的内建电场强度,使得电子(空穴)平均位置靠近左(右)垒,导致带间跃迁吸收峰呈指数减小且发生蓝移;ZnO/MgxZn1-xO量子阱带间跃迁吸收峰随阱宽增大而减小,吸收峰发生红移.所得结果可为改善异质结构材料和器件的光电性能提供理论指导,以期获得实际应用所需的光学吸收频谱和波长.