Effect of an electric field on the bifurcation of a biaxially stretched incompressible slab rubber

This paper describes the effect of an electrical field on the bifurcation phenomenon that appears in a biaxially stretched slab of Mooney-Rivlin material (M. Mooney, J. Appl. Phys. 11, 582 (1940)) subjected to equal dead loads. The main conclusion of the analysis is that the stretch ratio at which the bifurcation phenomenon appears crucially depends on the configuration of the system rubber slab-electrodes. The theoretical foundations of the present study are based on a recent formulation on this subject carried out by Dorfmann and Ogden (A. Dorfmann, R.W. Ogden, Acta Mech. 174, 167 (2005); J. Elasticity 82, 99 (2006)).     

Instability of incompressible cylinder rubber tubes under radial electric fields

The possibility of instability of cylindrical tubes of elastomers is analyzed taking into account Mooney-Rivlin (M. Mooney, J. Appl. Phys. 11, 582 (1940)) and Ogden (R.W. Ogden, Proc. R. Soc. London, Ser. A 326, 565 (1972)) models. In some aspects this paper is the elasto-electric counterpart of a previous paper by Bustamante, Dorfmann and Ogden (R. Bustamante, A. Dorfmann, R.W. Ogden, J. Engn. Math. 59, 139 (2007)). However in the present case the appearance of instability is checked. The results indicate that models more complex than the Mooney-Rivlin model are necessary to predict instability zones showing minimum critical points.     

Re-study of Nucleon Pole Contribution in J/

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Shape Coexistence for 179Hg in Relativistic Mean-Field Theory

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Pair-Breaking Critical Current Density of Two-Band Superconductor MgB2

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Top Quark Flavor Changing Decay t

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Quantum entanglement formation by repeated spin blockade measurements in a spin field-effect transistor structure embedded with quantum dots

We propose a method of operating a quantum state machine made of stacked quantum dots buried in adjacent to the channel of a spin field-effect transistor (FET) [S. Datta, B. Das, Appl. Phys. Lett. 56 (1990) 665; K. Yoh, et al., Proceedings of the 23rd International Conference on Physics of Semiconductors (ICPS) 2004; H. Ohno, K. Yoh et al., Jpn. J. Appl. Phys. 42 (2003) L87; K. Yoh, J. Konda, S. Shiina, N. Nishiguchi, Jpn. J. Appl. Phys. 36 (1997) 4134]. In this method, a spin blockade measurement extracts the quantum state of a nearest quantum dot through Coulomb blockade [K. Yoh, J. Konda, S. Shiina, N. Nishiguchi, Jpn. J. Appl. Phys. 36 (1997) 4134; K. Yoh, H. Kazama, Physica E 7 (2000) 440] of the adjacent channel conductance. Repeated quantum Zeno-like (QZ) measurements [H. Nakazato, et al., Phys. Rev. Lett. 90 (2003) 060401] of the spin blockade is shown to purify the quantum dot states within several repetitions. The growth constraints of the stacked InAs quantum dots are shown to provide an exchange interaction energy in the range of 0.01–1 meV [S. Itoh, et al., Jpn. J. Appl. Phys. 38 (1999) L917; A. Tackeuchi, et al., Jpn. J. Appl. Phys. 42 (2003) 4278]. We have verified that one can reach the fidelity of 90% by repeating the measurement twice, and that of 99.9% by repeating only eleven QZ measurements. Entangled states with two and three vertically stacked dots are achieved with the sampling frequency of the order of 100 MHz.     

Nanoscale oscillatory fracture propagation in metallic glasses

We describe the oscillatory crack propagation for small propagation velocities at the atomistic scale that was recently observed for brittle metallic glasses [G. Wang, Y.T. Wang, Y.H. Liu, M.X. Pan, D.Q. Zhao, W.H. Wang, Appl. Lett. 89 (2006) 121909; G. Wang, D.Q. Zhao, H.Y. Bai, M.X. Pan, A.L. Xia, B.S. Han, X.K. Xi, Y. Wu, W.H. Wang, Phys. Rev. Lett. 98 (2007) 235501]. Based on a simple model of crack propagation [Y. Braiman, T. Egami, Phys. Rev. E, 77 (2008) 065101(R)], we derived and analyzed expressions for the feature size, oscillation period, and maximum strain accumulated in the material.     

基于六粒子纠缠态和Bell态测量的量子信息分离

通过介绍六粒子纠缠态的新应用研究,提出了一个二粒子任意态的信息分离方案.在这个方案中,发送者Alice、控制者Charlie和接受者Bob共享一个六粒子纠缠态,发送者先执行两次Bell基测量|然后控制者执行一次Bell基测量|最后接受者根据发送者和控制者的测量结果,对自己拥有的粒子做适当的幺正变换,从而能够重建要发送的二粒子任意态.这个信息分离方案是决定性的,即成功概率为100%.与使用相同的量子信道进行二粒子任意态的信息分离方案相比,本文提出的方案只需要进行Bell基测量而不需要执行多粒子的联合测量,从而使得这个方案更简单、更容易,并且在目前的实验室技术条件下是能够实现的.     

on submicron rings and their application for coherent nanoelectronic devices

Electron-phase modulation in magnetic and electric fields will be presented in In_0.75Ga_0.25As Aharonov–Bohm (AB) rings. The zero Schottky barrier of this material made it possible to nanofabricate devices with radii down to below 200 nm without carrier depletion. We shall present a fabrication scheme based on wet and dry etching that yielded excellent reproducibility, very high contrast of the oscillations and good electrical gating. The operation of these structures is compatible with closed-cycle refrigeration and suggests that this process can yield coherent electronic circuits that do not require cryogenic liquids. The InGaAs/AlInAs heterostructure was grown by MBE on a GaAs substrate [F. Capotondi, G. Biasiol, D. Ercolani, V. Grillo, E. Carlino, F. Romanato, L. Sorba, Thin Solid Films 484 (2005) 400], and in light of the large effective g-factor and the absence of the Schottky barrier is a material system of interest for the investigation of spin-related effects [W. Desrat, F. Giazotto, V. Pellegrini, F. Beltram, F. Capotondi, G. Biasiol, L. Sorba, D.K. Maude, Phys. Rev. B 69 (2004) 245324; W. Desrat, F. Giazotto, V. Pellegrini, M. Governale, F. Beltram, F. Capotondi, G. Biasiol, L. Sorba, Phys. Rev. B 71 (2005) 153314; J. Nitta, T. Akazaki, H. Takayanagi, T. Enoki, Phys. Rev. Lett. 78 (1997) 1335] and the realization of hybrid superconductor/semiconductor devices [Th. Schäpers, A. Kaluza, K. Neurohr, J. Malindretos, G. Crecelius, A. van der Hart, H. Hardtdegen, H. Lüth, Appl. Phys. Lett. 71 (1997) 3575].     

Study of Strange Quark Mass in CFL Phase

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Sigma Terms and Strangeness Contents of Baryon Octet in Modified Chiral Perturbation Theory

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Comment on: “Globally exponential synchronization in array of asymmetric coupled neural networks” [Phys. Lett. A 369 (2007) 444]

In this Letter, we indicate that the proposed sufficient condition in Letter [J.Q. Lu, W.C. Ho, M. Liu, Phys. Lett. A 369 (2007) 444] does not hold when coupling matrix G satisfies Assumption 3 in Letter [J.Q. Lu, W.C. Ho, M. Liu, Phys. Lett. A 369 (2007) 444]. Besides, there are some mistakes in deducing Theorem 1. The mistakes have been corrected and a correct version is given in this Letter.     

Statistical analyses of repolarisation current of a PZT film deposited on ITO electrode with different thermal treatments

In the vast application fields of lead zirconate titanate (PZT) thin films, of particular interest are the interaction effects occurring at the ferroelectric–substrate interface [E. Bruno, M.P. De Santo, M. Castriota, S. Marino, G. Strangi, E. Cazzanelli and N. Scaramuzza, J. Appl. Phys. 103 (2008) p.064103; S. Dunn and R.W. Whatmore, J. Eur. Ceram. Soc. 22 (2002) p.825]. Relevant for this purpose are polarity-sensitive liquid crystals (LC) cells and micro- and nanoelectronic applications [S. Marino, M. Castriota, G. Strangi, E. Cazzanelli and N. Scaramuzza, J. Appl. Phys. 102, selected for Virtual Journal of Nanoscale Science & Technology, 30 July 2007 (2007) p.013002]. The polarisation current was investigated of a PZT film (PbZr_0.47Ti_0.53O₃) obtained by sol–gel synthesis and deposited by spin coating on an indium tin oxide (ITO) electrode. The different behaviour exhibited by such a system when the support electrode was previously submitted to a thermal treatment was attributed to the change of the electrical properties of the ITO layer. In particular, a higher negative charge in the conductive band of the ITO electrode seems to be responsible for a higher order in the ferroelectric film.     

Single-oscillator model and determination of optical constants of spray pyrolyzed amorphous SnO<Subscript>2</Subscript> thin films

It has recently been shown that growth of a multilayer structure with one or more delta-layers at high temperature leads to spreading and asymmetrization of the dopant distribution [see, for example, E.F.J. Schubert, Vac. Sci. Technol. A. 8, 2980 (1990), A.M. Nazmul, S. Sugahara, M. Tanaka, J. Crystal Growth 251, 303 (2003); R.C. Newman, M.J. Ashwin, M.R. Fahy, L. Hart, S.N. Holmes, C. Roberts, X. Zhang, Phys. Rev. B 54, 8769 (1996); E.F. Schubert, J.M. Kuo, R.F. Kopf, H.S. Luftman, L.C. Hopkins, N.J. Sauer, J. Appl. Phys. 67, 1969 (1990); P.M. Zagwijn, J.F. van der Veen, E. Vlieg, A.H. Reader, D.J. Gravesteijn, J. Appl. Phys. 78, 4933 (1995); W.S. Hobson, S.J. Pearton, E.F. Schubert, G. Cabaniss, Appl. Phys. Lett. 55, 1546 (1989); Delta Doping of Semiconductors, edited by E.F. Schubert (Cambridge University Press, Cambridge, 1996); Yu.N. Drozdov, N.B. Baidus', B.N. Zvonkov, M.N. Drozdov, O.I. Khrykin, V.I. Shashkin, Semiconductors 37, 194 (2003); E. Skuras, A.R. Long, B. Vogele, M.C. Holland, C.R. Stanley, E.A. Johnson, M. van der Burgt, H. Yaguchi, J. Singleton, Phys. Rev. B 59, 10712 (1999); G. Li, C. Jagadish, Solid-State Electronics 41, 1207 (1997)]. In this work analytical and numerical analysis of dopant dynamics in a delta-doped area of a multilayer structure has been accomplished using Fick's second law. Some reasons for asymmetrization of a delta-dopant distribution are illustrated. The spreading of a delta-layer has been estimated using example materials of a multilayer structure, a delta-layer and an overlayer.     

Mixing,ergodicity and slow relaxation phenomena

Investigations on diffusion in systems with memory [I.V.L. Costa, R. Morgado, M.V.B.T. Lima, F.A. Oliveira, Europhys. Lett. 63 (2003) 173] have established a hierarchical connection between mixing, ergodicity, and the fluctuation–dissipation theorem (FDT). This hierarchy means that ergodicity is a necessary condition for the validity of the FDT, and mixing is a necessary condition for ergodicity. In this work, we compare those results with recent investigations using the Lee recurrence relations method [M.H. Lee, Phys. Rev. B 26 (1982) 2547; M.H. Lee, Phys. Rev. Lett. 87 (2001) 250601; M.H. Lee, J. Phys. A: Math. Gen. 39 (2006) 4651]. Lee shows that ergodicity is violated in the dynamics of the electron gas [M.H. Lee, J. Phys. A: Math. Gen. 39 (2006) 4651]. This reinforces both works and implies that the results of [I.V.L. Costa, R. Morgado, M.V.B.T. Lima, F.A. Oliveira, Europhys. Lett. 63 (2003) 173] are more general than the framework in which they were obtained. Some applications to slow relaxation phenomena are discussed.     

Dynamics of Two-Photon Lasers with

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Comment on "Wide-field coherent anti-Stokes Raman scattering microscopy with non-phase-matching illumination"

We comment on a Letter by Toytman et al. [Opt. Lett.32, 1941 (2007)] in which a novel setup for wide-field imaging in coherent anti-Stokes Raman scattering (CARS) microscopy is demonstrated. There the authors state that our phase-matching implementation of a wide-field CARS system [Appl. Phys. Lett.84, 816 (2004); New J. Phys.8, 36 (2006)] suffers from a strong background from the bulk medium. However, our results show quite the contrary, i.e., that our setup provides a very good signal contrast, due to an almost vanishing background level from the bulk solvent.     

Single-element ultrasonic transducer modeling using a hybrid FD–PSTD method

In a recent publication [E. Filoux, S. Callé, D. Certon, M. Lethiecq, F. Levassort, Modeling of piezoelectric transducers with combined pseudospectral and finite-difference methods, J. Acoust. Soc. Am. 123 (6) (2008) 4165–4173], a new finite-difference/pseudospectral time-domain (FD–PSTD) algorithm was presented and used to model the generation of acoustic waves by a piezoelectric resonator and their propagation in the structure and the surrounding water. In this paper, the model has been extended to simulate the two-dimensional behaviour of a complete single-element transducer, composed of the resonator, a backing and a front matching layer. This further version of the model takes into account the mechanical loss in materials, and enables the calculation of electrical impedance, which is a characteristic of high interest to optimize the performance of ultrasonic transducers. The impedance curves of a PZT [URL: http://www.ferroperm-piezo.com (last viewed 04/2008); B. Jaffe, R.S. Roth, S. Marzullo, Piezoelectric properties of lead zirconate-lead titanate solid-solution ceramics, J. Appl. Phys. 25 (1954) 809–810] plate-based high-frequency transducer, with a 50 MHz thickness resonant frequency, were compared to those of a KLM model [R. Krimholtz, D.A. Leedom, G.L. Matthei, New equivalent circuit for elementary piezoelectric transducers, Electron. Lett. 6 (1970) 398–399] in the one-dimensional case. The acoustical properties were also found to be in good agreement with those obtained using the finite element (FE) method of ATILA^® software in two-dimensional configuration.     

Erratum to “Adaptive synchronization of the complex dynamical network with non-derivative and derivative coupling” [Phys. Lett. A 374 (2010) 1673]

We indicate that the proof of theorem is incorrect in Letter [Y. Xu, W. Zhou, J. Fang, W. Sun, Phys. Lett. A 374 (2010) 1673]. For correcting the mistakes, a correct version of the proof of theorem is given in this Letter.