The effect of electric field stress on pure poly(vinyl chloride), poly(methyl methacrylate) and their polyblend samples

The TSDC and transient currents measurement have been carried out on pure poly(vinyl chloride), poly(methyl methacrylate) and polyblends of various weight ratios as a function of electric fields at constant poling temperature. For PVC and different blend samples single peak in the temperature range 100–170 °C has been observed in TSDC thermograms, however, for PMMA samples two peaks were observed at around 90 and 165 °C. The various TSDC parameters i.e. activation energy, charge released and relaxation times have been calculated. Results suggest that dipolar and space charge mechanism are dominant for observed current.     

Dielectric relaxation of CsHSeO4 above room temperature

Dielectric measurements of CsHSeO₄ show a distinct relaxation at low frequencies at several isotherms (T < 363 K). For example, the relaxation frequency is around 4 kHz at 323 K and increases to higher frequencies (~ 100 kHz) as the temperature increases. The relaxation has an activation energy of 0.8 eV, which is in close agreement with that associated with transport of charge carriers. We suggest that the observed dielectric relaxation could be produced by the H⁺ jump and SeO₄^? 2 reorientation that cause distortion and change the local lattice polarizability, inducing dipoles like HSeO₄^?.     

Conductivity and dielectric relaxation phenomena in (NH4)2SO4 single crystal

AC impedance measurements have been carried out on (NH₄)₂SO₄ single crystals for the temperatures from 300 to 473 K and frequency range between 100 Hz and 4 MHz. The results reveal two distinct relaxation processes in the sample crystal. One is the dipolar relaxation with a peak at frequency slightly higher than 4 × 10⁶ Hz. The other is the charge carrier relaxation at lower frequencies. The frequency dependence of conductivity is described by the relation σ(ω) = Bωⁿ, and n = 1.32 is obtained at temperatures below 413 K. This value drops to 0.2 and then decreases slightly with increasing temperature. The dipolar response of the (NH₄)₂SO₄ single crystal under an ac field is attributed to the reorientation of dipoles. The contribution of charge carriers is increasing substantially with increasing temperature at temperatures above 413 K. The temperature variation of conductivity relaxation peaks follows the Arrhenius relation. The obtained activation energy for migration of the mobile ions for (NH₄)₂SO₄ single crystal was 1.24 eV in the temperature range between 433 and 468 K in this intrinsic region. It is proposed that the NH₄⁺ in the sample crystal has the contribution to the electrical conduction.     

The lightning striking distance—Revisited

First return stroke current waveforms measured by Berger [Methods and results of lightning records at Monte San Salvatore from 1963–1971 (in German), Bull. Schweiz. Elektrotech. ver. 63 (1972) 21403—21422] and Berger and Vogelsanger [Measurement and results of lightning records at Monte San Salvatore from 1955–1963 (in German), Bull. Schweiz. Elektrotech. ver. 56 (1965) 2–22] are used to estimate the charge stored in the lightning stepped leader channel. As opposed to previous charge estimates based on the entire current waveform, only the initial portion of measured current waveforms (100 μs in duration) was used in order to avoid the inclusion of any charges not involved in the effective neutralization of charges originally stored on the leader channel. The charge brought to ground by the return stroke within the first 100 μs, Q_f,100 μs (in C) is related to the first return stroke peak current, I_pf (in kA), as Q_f,100 μs=0.61 I_pf. From this equation the charge distribution of the stepped leader as a function of the corresponding peak return stroke current is estimated. This distribution (along with the assumed average electric field of 500 kV/m in the final gap) is used to estimate the lightning striking distance S (in meters) to a flat ground as a function of the prospective return stroke peak current I (in kA): S=1.9 I_pf^0.90. For the median first stroke peak current of 30 kA one obtains S=41 m, while the traditional equation, S=10 I_pf^0.65, gives S=91 m. In our view, the new equation for striking distance provides a more physically realistic basis for the electro-geometric approach widely used in estimating lightning incidence to power lines and other structures.     

Dielectric relaxations in undoped,Ce-doped and Ce,Zr-codoped Lu3Al5O12 single crystals

Dielectric spectroscopy was performed on single crystals of pure, Ce-doped or Ce,Zr-codoped Lu₃Al₅O₁₂, before and after UV- or X-irradaiation, at various frequencies within the range 100 Hz–1 MHz as the temperature was scanned from 110 to 353 K. All samples previously subjected to ionising radiations gave spectra showing loss peaks with Arrhenius characteristics of permanent dipoles relaxation. We attribute the dipoles to defect-stabilised pairs of anion–anion vacancies (oxygen ions and oxygen vacancies) that have captured holes and photo-electrons separately, thus forming O^?- and F⁺-like centers. The dielectric relaxation peaks disappeared in undoped or doped samples annealed at 573 K, suggesting that charge carrier traps are relatively deep. UV–visible absorption spectra have also been measured, which tend to support our proposed interpretation. Further evidence for deep traps has come from thermally stimulated luminescence experiments.     

Estimation of charge neutralized by negative cloud-to-ground flashes in Catalonia thunderstorms

Charges neutralized by lightning flashes have been usually located and inferred from the quasi-static changes in the vertical component of electric field (ΔE) obtained from multiple synchronized measurement stations. In this paper, the charges neutralized by negative cloud-to-ground (?CG) lightning flashes are located and inferred using single station electric field measurements in combination with total lightning (cloud-to-ground and intra-cloud) data from lightning detection networks in the north-eastern region of Spain. The altitude of the negative charge region in 8 thunderstorms examined here was in the range of 5.8–7.2 km as inferred from temperature soundings. Charge locations are assumed to be in the region where the VHF (Very High Frequency) sources associated with the discharge are located. The quantity of charge neutralized is calculated using a point charge model and the measured vertical component of electric field (ΔE) associated with each flash. The results are compared with those previously obtained from measurements carried out in the NASA Kennedy Space Center (KSC) in Florida. The analysis of 260 ?CG flashes from eight thunderstorms reveals a median charge value of ?9.7 C with 95% of the values ranging between ?4.5 C and ?45 C.     

Spin state transition in Ca-doped Na0.7CoO2 with the nominal Co valence below 3.16

In order to clarify the nature of the transition around 300 K in Ca-doped Na_0.7CoO₂, the magnetism of Na_0.7Ca_yCoO₂ with y=0.035 and 0.07 was investigated in a positive muon spin rotation and relaxation (μ⁺SR) experiment. Transverse field μ⁺SR measurements showed that the spin state of the Co ions in Na_0.7Ca_0.07CoO₂ changes at around 300 K; i.e. the exponential relaxation rate vs. T curve exhibited a large maximum around 300 K with an accompanying small peak in the muonic Knight shift, whereas no changes were found in the asymmetry, similar to [Ca₂CoO₃]_0.62[CoO₂] at around 400 K.Although the spin-density-wave (SDW) state exists for Na_xCoO₂ with x≥0.75 at low temperatures, zero-field μ⁺SR spectra in the Ca-doped samples showed no muon spin precessions down to 1.8 K but only fast relaxations indicating disorder. This is probably because the Ca²⁺ ions in the Na planes alter the charge and/or spin distribution in the CoO₂ planes. As a result, the SDW order is hindered, as the nominal Co valence is decreased below 3.16.     

Sound insulation property of Al–Si closed-cell aluminum foam sandwich panels

Al–Si closed-cell aluminum foam sandwich panels (1240 mm × 1100 mm) of different thicknesses and different densities were prepared by molten body transitional foaming process in Northeastern University. The experiments were carried out to investigate the sound insulation property of Al–Si closed-cell aluminum foam sandwich panels of different thicknesses and different densities under different frequencies (100–4000 Hz). Results show that sound reduction index (R) is small under low frequencies, large under high frequencies; thickness affects the sound insulation property of material obviously: when the thicknesses of Al–Si closed-cell aluminum foam sandwich panels are 12, 22, and 32 mm, the corresponding weighted sound reduction indices (R_W) are 26.3, 32.2, and 34.6 dB, respectively, the rising trend tempered; the increase of density of Al–Si closed-cell aluminum foam can also increase the sound insulation property: when the densities of aluminum foam are 0.31, 0.51, and 0.67 g/cm³, the corresponding weighted sound reduction indices (R_W) are 28.9, 34.3, and 34.6 dB, the increasing value mitigating.     

Spectroscopic study of nanocrystalline V2O5·nH2O films doped with Li ions

Optical properties of nanocrystalline, Li_xV₂O₅·nH₂O films (0<x<22 mol%), are explored in the present work. These films have been produced by the sol–gel technique (colloidal route), which was used for the preparation of high purity and homogeneity films. Optical measurements were carried out using a double-beam spectrophotometer. The optical constants such as refractive index n, the extinction coefficient k, absorption coefficient α, and optical band gap of the films material have been evaluated. The optical absorption coefficient was calculated from the measured normal reflectance, R, and transmittance, T, spectra. The optical spectra of all samples exhibited two distinct regions: at high energy, which suggests a direct forbidden transition with optical gap ranging from 1.75 to 2.0 eV and increases with increase in Li-content. On the other hand a second low-energy band suggests a direct allowed transition with optical gap ranging from 0.40 to 0.42 eV. The width of the localized states (band tail) E_e was also estimated for all samples. Additional calculations applying the real part of the optical dielectric function led to the evaluation of the charge carrier concentration and their effective mass.     

In situ characterization of transport properties of superconducting (Cu, C)-system thin films

Transport properties of (Cu, C)Ba₂CuO_x [(Cu, C)-1201] thin films have been characterized by in situ temperature dependence of resistivity, without breaking vacuum from the deposition to the measurement. In in situ transport properties measurements, the obtained results reveal that (Cu, C)Ba₂CuO_x films exhibit T_c > 20 K on the cased of conductivity at 290 K (σ_[290 K]) > 4 × 10² S/cm and temperature coefficient of resistivity (TCR) > 1.5 × 10^?3 K^?1, and doping level of them should be in between under-doped and optimally-doped states. Their results suggest that there would be possible to further increases of T_c, and XPS data suggest that (Cu, C)-system should have the excellent dopability in their charge reservoir and the possibility of low anisotropy.     

Study on unsteady molten insulation volume change during flame spreading over wire insulation in microgravity

Tests with flames spreading over wire insulation in microgravity were performed at varying external opposed flow conditions to examine the influence of flow velocity in the time dependent volume change of molten insulation. In the experiments, low density polyethylene insulated Nickel–chrome wire specimens were used and the oxygen concentration was fixed at 30% (N₂ balanced). The results show that the time dependent changes in molten insulation volume are related to the opposed flow velocity. Further, as opposed flow velocity increases, the volume change rate decreases monotonically. By subtracting the volume change rate from the volume supply rate from the solid part to the molten part, which is calculated by multiplying the rate of spreading of molten insulation at the leading edge by the cross sectional area of the insulation, a pyrolysis volume rate for the polyethylene was established. The pyrolysis volume rate is defined as the amount of consumed molten insulation volume per unit time. After these calculations, it was found that the pyrolysis volume rate increases monotonically with increases in the opposed flow velocity. Further, numerical calculations of time dependent volume change in the molten insulation at different flow velocities were made. The numerical results show good agreement with the experimental results of the molten insulation volume change during the 0–4.5 s of microgravity measured here. By using the numerical calculations for this initial short period, the time dependent volume change in molten insulation during longer-term microgravity is predicted. The calculated results show that the volume finally reaches a steady state value in flow velocities of 10–250 mm/s investigated here. These results provide insight into the mechanism of flame spreading over wire insulation, especially the unsteadiness of the flame in flame spreading events.     

Annealing effects on the crystal structure and physical properties of FeSe1−xTex (0.6 ≦ x ≦ 1) single crystals

Annealing effects of FeSe_1?xTe_x (0.6 ≦ x ≦ 1) single crystals have been investigated from measurements of the powder X-ray diffraction and specific heat. Through the annealing, several peaks of powder X-ray diffraction have become sharp and a clean jump of the specific-heat at the superconducting (SC) transition temperature, T_c, has been observed for x = 0.6–0.9, indicating bulk superconductivity. For annealed single-crystals of x = 0.6–0.8, the SC condensation energy, U₀, and the SC gap, Δ₀, at 0 K have been estimated as ～1.8 J/mol and 2.3–2.5 meV, respectively. The value of 2Δ₀/k_BT_c is 3.9–4.5, indicating a little strong-coupling superconductivity. Both the electronic specific-heat coefficient in the normal state, γ_n, and the residual electronic specific-heat coefficient in the SC state, γ₀, have been found to show significant x dependence. The values of γ_n are much larger than those estimated from the band calculation.     

Quick response PZT/P(VDF-TrFE) composite film pyroelectric infrared sensor with patterned polyimide thermal isolation layer

The fabrication method and the pyroelectric response of a single element infrared sensor based lead zirconate titanate (PZT) particles and polyvinylidene fluoride P(VDF-TrFE) copolymer composite thick film is reported in this paper. A special thermal insulation structure, including polyimide (PI) thermal insulation layer and thermal insulation tanks, was used in this device. The thermal insulation tanks were fabricated by laser micro-etching technique. Voltage responsivity (R_V), noise voltage (V_noise), noise equivalent power (NEP), and detectivity (D^*) of the PZT/P(VDF-TrFE) based infrared sensor are 1.2 × 10³ V/W, 1.25 × 10⁻⁶ V Hz^1/2, 1.1 × 10⁻⁹ W and 1.9 × 10⁸ cm Hz^1/2 W⁻¹ at 137.3 Hz modulation frequency, respectively. The thermal time constant of the infrared sensor τ_T was about 15 ms. The results demonstrate that the composite infrared sensor show a high detectivity at high chopper frequency, which is an essential advantage in infrared detectors and some other devices.     

Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices

A non-volatile flash memory device based on metal oxide semiconductor (MOS) capacitor structure has been fabricated using platinum nano-crystals(Pt–NCs) as storage units embedded in HfAlO_x high-k tunneling layers. Its memory characteristics and tunneling mechanism are characterized by capacitance–voltage(C–V) and flat-band voltage-time(ΔV_FB-T) measurements. A 6.5 V flat-band voltage (memory window) corresponding to the stored charge density of 2.29 × 10¹³ cm⁻² and about 88% stored electron reserved after apply ±8 V program or erase voltage for 10⁵ s at high frequency of 1 MHz was demonstrated. Investigation of leakage current–voltage(J–V) indicated that defects-enhanced Pool-Frenkel tunneling plays an important role in the tunneling mechanism for the storage charges. Hence, the Pt–NCs and HfAlO_x based MOS structure has a promising application in non-volatile flash memory devices.     

High resolution emission spectroscopy of the E2Π–X2Σ+ transition of SrH and SrD

Emission spectra of SrH and SrD have been studied at high resolution using a Fourier transform spectrometer. The molecules have been produced in a high temperature furnace from the reaction of strontium metal vapor with H₂/D₂ in the presence of a slow flow of Ar gas. The spectra observed in the 18 000–19 500 cm^?1 region consist of the 0–0 and 1–1 bands of the E²Π–X²Σ⁺ transition of the two isotopologues. A rotational analysis of these bands has been obtained by combining the present measurements with previously available pure rotation and vibration–rotation measurements for the ground state, and improved spectroscopic constants have been obtained for the E²Π state. The present analysis provides spectroscopic constants for the E²Π state as ΔG(½) = 1166.1011(15) cm^?1, B_e = 3.805503(32) cm^?1, α_e = 0.098880(47) cm^?1, r_e = 2.1083727(89) Å for SrH, and ΔG(½) = 839.1283(23) cm^?1, B_e = 1.918564(15) cm^?1, α_e = 0.034719(23) cm^?1, r_e = 2.1121943(83) Å for SrD.     

Correlation between phosphorus concentration and opto-electrical properties of doped a-Si:H films

Phosphorus doped hydrogenated amorphous silicon (a-Si:H) films were prepared by decomposition of silane using RF plasma glow discharge. Both DC dark conductivity measurements, and spectrophotometric optical measurements through the range 200–3000 nm were recorded for the prepared films. The DC conductivity activation energy E_a decreased from 0.8 eV for the undoped sample to 0.34 eV for the highest used doping value. The optical energy gap E_g decreased ranging from 1.66 eV to 1.60 eV. The refractive index n, the density of charge carriers N/m* and the plasma frequency ω_p showed an opposite behavior, i.e. an increase in value with doping. Fitting the dispersion values to Sellmeier equation led to the determination of the material natural frequency of oscillating particles. A correlation between the changes in these parameters with the doping has been attempted.     

Investigation of carrier scattering mechanisms in n-Cd1−xMgxSe single crystals using Fourier Transform Infrared Spectroscopy

This paper presents results of investigations of carrier scattering mechanisms in n-Cd_1−xMg_xSe mixed crystals with magnesium content varying from x = 0 to x = 0.33. Experimental results obtained by means of the Fourier Transform Infrared Spectroscopy (FT-IR) and Hall measurements are discussed in the frame of the Drude and the quantum theories. The character of the wavelength dependence of the optical absorption coefficient in investigated crystals was found to be of the type ∼λ^p, where 2 < p < 3.5. The p = 2 is expected from the Drude theory and the relaxation time approximation. The obtained experimental values of p parameter suggest that the optical phonon and impurity scattering mechanisms are dominating scattering mechanisms in these crystals. The calculated carrier concentration from optical absorption spectrum for a n-CdSe crystal is in a good agreement with this obtained from Hall measurement.     

Thin films of molecule-based charge transfer complex cobalt tetracyanoethylene: In situ X-ray photoemission study

Thin films of molecule-based charge transfer magnet, cobalt tetracyanoethylene [Co(TCNE)_x, x ~ 2] consisting of the transition metal Co, and an organic molecule viz. tetracyanoethylene (TCNE) have been deposited by using physical vapor deposition method under ultra-high vacuum conditions at room temperature. X-ray photoelectron spectroscopy (XPS) technique has been used extensively to investigate the electronic properties of the Co(TCNE)_x thin films. The XPS measurements show that the prepared Co(TCNE)_x films are clean, and oxygen free. The stoichiometries of the films, based on atomic sensitive factors, are obtained, and yields a ~ 1:2 ratio between metal Co and TCNE for all films. Interestingly, the positive shift of binding energy position for Co(2p), and negative shifts for C(1s) and N(1s) peaks suggest a charge-transfer from Co to TCNE, and cobalt is assigned to its Co(II) valence state. In the valence band investigation, the highest occupied molecular orbital (HOMO) of Co(TCNE)_x is found to be at ~ 2.4 eV with respect to the Fermi level, and it is derived either from the TCNE^? singly occupied molecular orbital (SOMO) or Co(3d) states. The peaks located at ~ 6.8 eV and ~ 8.8 eV are due to TCNE derived electronic states. The obtained core level and valence band results of Co(TCNE)_x, films are compared with those of V(TCNE)_x thin film magnet: a well known system of M(TCNE)_x type of organic magnet, and important points regarding their electronic properties have been brought out.     

Proton diffusion in the superprotonic phase of [(NH4)1 − xRbx]3H(SO4)2 as studied by 1H spin-lattice relaxation

Proton diffusion in [(NH₄)_1 ? xRb_x]₃H(SO₄)₂ (0 < x < 1) has been studied by means of ¹H spin-lattice relaxation times, T₁. The relaxation times were measured at 200.13 MHz in the range of 296–490 K and at 19.65 MHz in the range of 300–470 K. In the high-temperature phase (phase I), translational diffusion of the acidic protons relaxes both the acidic protons and the ammonium protons. Spin diffusion averages the relaxation rate of the two kinds of protons, whereas proton exchange between them are slow. The spin-lattice relaxation times in phase I were analyzed theoretically, and parameters of proton diffusion were obtained. The mean residence time of the acidic protons increases with increase in x for [(NH₄)_1 ? xRb_x]₃H(SO₄)₂ (0 ≤ x ≤ 0.54). Rb₃H(SO₄)₂ does not obey this trend. The results of NMR well explain the macroscopic proton conductivity.     

Extending the fast multipole method for charges inside a dielectric sphere in an ionic solvent: High-order image approximations for reaction fields

As a sequel to our previous paper on extending the Fast Multipole Method (FMM) for charges inside a dielectric sphere [J. Comput. Phys. 223 (2007) 846–864], this paper further extends the FMM to the electrostatic calculation for charges inside a dielectric sphere immersed in an ionic solvent, a scenery with more relevance in biological applications. The key findings include two fourth-order multiple discrete image approximations in terms of u = λa to the reaction field induced by the ionic solvent, provided that u = λa < 1 where λ is the inverse Debye screening length of the ionic solvent and a is the radius of the dielectric sphere. A 10⁻⁴ relative accuracy in the reaction field of a source charge within the sphere can be achieved with only 3–4 point image charges. Together with the image charges, the FMM can be used to speed up the calculation of electrostatic interactions of charges in a dielectric sphere immersed in an ionic solvent.