Fractional soliton dynamics of electrical microtubule transmission line model with local M-derivative

In this paper, two integrating strategies namely exp[-Φ(X)] and G'/G~2-expansion methods together with the attributes of local-M derivatives have been acknowledged on the electrical microtubule(MT) model to retrieve soliton solutions. The said model performs a significant role in illustrating the waves propagation in nonlinear systems. MTs are also highly productive in signaling, cell motility, and intracellular transport. The proposed algorithms yielded solutions of bright, dark, singular, and combo fractional soliton type. The significance of the fractional parameters of the fetched results is explained and presented vividly.     

Electrical properties of triple-doped bismuth oxide electrolyte for solid oxide fuel cells

In this study, the quaternary solid solutions of (Bi₂O₃)_(0.8?x)(Tb₄O₇)_0.1(Ho₂O₃)_0.1(Dy₂O₃)_x (x = 0.05, 0.10, 0.15, 0.20) as an electrolyte were synthesized for solid oxide fuel cells by the technique of solid-state synthesis.

The products were characterized by X-ray powder diffraction, differential thermal analysis/thermal gravimetry and the four-point probe technique (4PPT). The total electrical conductivity is measured on the temperature and the doped concentration by 4PPT.

All samples have been obtained as the δ-phase. According to the measurements of the 4PPT, the electrical conductivities of the samples increase with the temperature but decrease with the amount of doping rate. The value of the highest conductivity (σ) is found as 1.02?×?10^?1 S cm^?1 for the system of (Bi₂O₃)_0.75(Tb₄O₇)_0.1(Ho₂O₃)_0.1(Dy₂O₃)_0.05 at 850 °C. The thermal gravimetry (TG) curve shows that there is no mass loss of sample during the measurement. The analyses of differential thermal reveal that there are neither endothermic peaks nor exothermic peaks during the heating and cooling cycles (ranging from 30 to 1000 °C).     

The influence of oxidation temperature on structural, optical and electrical properties of thermally oxidized bismuth oxide films

Monoclinic bismuth oxide (Bi₂O₃) films have been prepared by thermal oxidation of vacuum evaporated bismuth thin films onto the glass substrates. In order to obtain the single phase Bi₂O₃, the oxidation temperature was varied in the range of 423-573 K by an interval of 50 K. The as-deposited bismuth and oxidized Bi₂O₃ films were characterized for their structural, surface morphological, optical and electrical properties by means of X-ray diffraction, scanning electron microscopy (SEM), optical absorption and electrical resistivity measurements, respectively. The X-ray analyses revealed the formation of polycrystalline mixed phases of Bi₂O₃ (monoclinic, α-Bi₂O₃ and tetragonal, β-Bi₂O₃) at oxidation temperatures up to 523 K, while at an oxidation temperature of 573 K, a single-phase monoclinic α-Bi₂O₃ was formed. From SEM images, it was observed that of as-deposited Bi films consisted of the well-defined isolated crystals of different shapes while after thermal oxidation the smaller dispersed grains were found to be merged to form bigger grains. The changes in the optical properties of Bi₂O₃ films obtained by thermal oxidation at various temperatures were studied from optical absorption spectra. The electrical resistivity measurement depicted semiconducting nature of Bi₂O₃ with high electrical resistivity at room temperature.     

Structural and electrical study of Ce-substituted bismuth vanadate

Samples of Ce^IV-substituted bismuth vanadate, formulated as Bi₄Ce_xV_2−xO_{11−(x/2)−δ}; 0≤x≤0.30, were synthesized by solid-state reactions. The phase structure and electrical conductivity were investigated using X-ray powder diffraction, FT-IR, differential thermal analysis and AC impedance spectroscopy. For a low composition range, two phase transitions, α↔β and β↔γ, were exhibited in which the system mimics in most events the parent compound. Impedance analysis evidenced no relationship between the blocking effect of charge carriers and structural changes at ambient temperatures. However, the temperature dependence of conductivity was correlated with the stability region of various phases within the system.     

New solid electrolytes based on bismuth oxide

The oxide ion conducting systems Bi₂O₃-Y₂O₃-Pr₆O₁₁ and Bi₂O₃-Y₂O₃-ZrO₂ have been prepared and studied in order to combine the advantages of stabilized Bi₂O₃ and ZrO₂ solid electrolytes. Coprecipitation of high purity oxides was used for preparation. The formation of the fluorite-type cubic structure was confirmed by X-ray powder diffraction analysis. The relative contributions of ions and electrons to the total conductivity were measured by the concentration cell method. Using Ultraviolet Photoemission Spectroscopy (UPS) we have determined the work function Φ of electrons, the position of the Fermi level in relation to the valence band edge (E_F-E_V) and the change of the ionization potential (I) as a function of temperature. For bismuth oxide-based solid electrolytes, we used an Fe/FeO mixture as reference contact to establish a defined oxygen partial pressure in the solid electrolyte sample. Oxygen isotope exchange experiments were performed in an exchange cell with a gas regulating system and mass spectrometer to determine the oxygen surface exchange rate. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995     

Diameter-dependent electrical transport properties of bismuth nanowire arrays

Single-crystalline bismuth nanowire arrays with different diameters were fabricated within porous anodic alumina membranes with the same pore size using the pulsed electro-deposition technique. X-ray diffraction measurements show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy and high-resolution transmission electron microscopy analyses indicate that bismuth nanowire arrays are high filling, ordered and single-crystalline. Electrical resistance measurements show that the bismuth nanowires have a metal-semiconductor transition when the diameters decrease from 90 to 50 nm, and the resistance behaviors are explained on the basis of the quantum confinement effect and Matthiessen’s rule.     

Optical and electrical properties of thermally oxidized bismuth thin films

Bismuth trioxide (Bi₂O₃) thin films were prepared by dry thermal oxidation of metallic bismuth films deposited by vacuum evaporation. The oxidation process of Bi films consists of a heating from the room temperature to an oxidation temperature (T_o = 673 K), with a temperature rate of 8 K/min; an annealing for 1 h at oxidation temperature and, finally, a cooling to room temperature. The optical transmission and reflection spectra of the films were studied in spectral domains ranged between 300 nm and 1700 nm, for the transmission coefficient, and between 380 nm and 1050 nm for the reflection coefficient, respectively. The thin-film surface structures of the metal/oxide/metal type were used for the study of the static current-voltage (I-U) characteristics. The temperature of the substrate during bismuth deposition strongly influences both the optical and the electrical properties of the oxidized films. For lower values of intensity of electric field (ξ < 5 × 10⁴V/cm), I-U characteristics are ohmic.     

Stable and high conductivity ceria/bismuth oxide bilayer electrolytes for lower temperature solid oxide fuel cells

A highly conductive bismuth oxide/ceria bilayer electrolyte was developed to reduce solid oxide fuel cell (SOFC) operating temperatures. Bilayer electrolytes were fabricated by depositing a layer of Er_0.2Bi_0.8O_1.5 (ESB) of varying thickness via pulsed laser deposition and dip-coating on a Sm_0.2Ce_0.8O_1.9 (SDC) substrate. The open-circuit potential (OCP) and ionic transference number (t _i) of ESB/SDC electrolytes were tested in a fuel cell arrangement as a function of relative thickness, temperature, and with H₂/H₂O and CO/CO₂ on the anode side and air on the cathode side. These EMF measurements showed a significant increase in OCP and t _i with the bilayer structure, as compared to the cells with a single SDC electrolyte layer. Furthermore, improvement in the OCP and t _i of bilayer SOFCs was observed with increasing relative thickness of the ESB layers. Hence, the bilayer structure overcomes the limited thermodynamic stability of bismuth oxides and prevents electronic conductivity of ceria-based oxides in reducing atmosphere.     

Barium silicate modified strontium bismuth tantalate ferroelectric thin films

Novel strontium bismuth tantalate (Sr_0.8Bi_2.2Ta₂O₉ (SBT)) modified with 3 and 5 mol% ratio barium silicate (Ba₂SiO₄) thin films were grown on Pt(100?nm)/Ti(50?nm)/SiO₂/Si(100) substrates by spin coating technique. The influence of barium silicate doping in SBT was studied from the view point of changing dielectric and ferroelectric properties like dielectric constant (ε_r) and remnant polarization (P_r). Well crystallized thin films showed convenient ferroelectric properties with comparatively lower P_r in the range between 1.52 and 0.44 µC/cm² and smaller ε_r value of 163. Thus, with such reduced values of P_r and ε_r barium silicate modified SBT offers a useful potential to be used in Ferroelectric Field Effect Transistor (FeFET) type (1T-type) Ferroelectric Random Access Memories (FeRAMs) upon improving insulation properties.     

Hypersonic properties of undoped and Cr-doped bismuth germanium oxide

The velocity and attenuation of hypersonic waves propagating along the [100] or [110] axis of undoped and Cr-doped Bi₁₂GeO₂₀ have been measured at frequencies from 0.76 to 1.65 GHz and at temperatures of 4.5, 24, 77 and 293 K. The second-order elastic constants and Debye temperature have been calculated from these results. The measurements and the results of the calculations are used to interpret the attenuation in terms of collisions between low-energy phonons, constituting the sound wave, and thermal phonons. The thermal-phonon lifetime and Grüneisen constant have been estimated for undoped and doped material.     

Oxygen permeation in bismuth-based materials. Part II: Characterisation of oxygen transfer in bismuth erbium oxide and bismuth calcium oxide ceramic

The ¹⁸O/¹⁶O Isotope Exchange Depth Profile technique was applied to BE25 ((Bi₂O₃)_0.75(Er₂O₃)_0.25) and BICAO ((Bi₂O₃)_0.73–(CaO)_0.27) dense ceramics to characterise the oxygen transfer in these materials. Pure ceramics, ceramics coated with silver on the surface and 40% silver cermets were investigated. Slow oxygen surface exchange kinetics were confirmed for the pure ceramics whilst the kinetics were improved when silver was painted on the surface. However oxygen permeation fluxes were not improved when a silver paste was painted onto the membrane surface. Permeation was also limited by electronic conduction which is likely to be more limiting than oxygen exchange at the surface of these ceramics. In contrast, fast kinetics of oxygen surface exchange were revealed for cermets.     

Inelastic behaviour of bismuth germanium oxide at hypersonic frequencies

Brillouin scattering was used between 10 and 300 K to probe 35 GHz hypersonic phonons. The velocity and attenuation of longitudinal phonons propagating in the [111] direction have been measured. The hypersonic attenuation appears to be dominated by anharmonic phonon-phonon interactions down to 150 K.     

Crystallographic fringe orientation diffraction efficiency in bismuth silicon oxide

We report the first experimental measurement of fringe-angle applied electric field scaling of space charge growth and of crystallographic orientation effects in the initial development of the diffraction efficiency of thick holograms produced by the photorefractive effect in a bismuth silicon oxide (BSO) crystal. Diffraction efficiencies of holograms made by interfering two plane waves on the [¯110] face are measured as a function of the angle between the fringe pattern and the applied electric field. As the crystal is rotated relative to the interference fringes, the applied field may be scaled to yield identical space charge growth. Polarization-dependent diffraction measurements agree with the theory of a birefringent grating when optical activity is included as a separate, serial effect. Both the rotation-scaled applied electric fields and the crystallographic variations in the birefringent diffraction grating are consistent with charge transport processes in which the initial space charge fields are perpendicular to the interference fringes over growth times extending nearly into the steady state regime.     

Fractional Fourier transform for partially coherent Gaussian-Schell model beams

The fractional Fourier transform (FRT) is applied to partially coherent twisted anisotropic Gaussian-Schell model (GSM) beams based directly on the cross-spectral density. An analytical and concise formula is derived for the cross-spectral density of partially coherent twisted anisotropic GSM beams passing through a FRT system in terms of the tensor method. The corresponding tensor ABCD law for performing a FRT is obtained. The connection between the FRT formula and the generalized Collins formula for partially coherent beams is discussed. The formulas derived provide a powerful tool for analyzing and calculating the FRTs of partially coherent beams.     

Graphene oxide with improved electrical conductivity for supercapacitor electrodes

Predominant few-layer graphene (FLG) sheets of high electrical conductivity have been synthesized by a multi-step intercalation and reduction method. The electrical conductivity of the as-synthesized FLG is measured to be ∼3.2 × 10⁴ S m⁻¹, comparable to that of pristine graphite. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman analysis reveal that the as-synthesized FLG sheets have large areas with single and double layers. The specific capacitance of 180 F g⁻¹ is obtained for the FLG in a 1 M Na₂SO₄ aqueous electrolyte by integrating the cyclic voltammogram. The good capacitive behavior of the FLG is very promising for the application for next-generation high-performance electrochemical supercapacitors.