Polymer White-Light-Emitting Diodes with High Work Function Cathode Based on a Novel Phosphorescent Chelating Copolymer

Polymer white-light-emitting diodes are fabricated based on the blend of poly[9,9-di-（2-ethylhexyl）-fluorenyl-2, 7- diyl]-end capped with polysilsesquioxane （PFO） and a chelating copolymer of poly[（9,9-bis（3′-（N,N-dimethylamino） propyl）-2, 7-fluorene-alt-2, 7-（9,9-dioctylfluorene） ）-co- [2, 7-（9,9-dioctlyfluorene）-alt-5,5-bis（2-（4-methyl-l-naphtha- lene） pyridine-C^2,N） iridium （III） acethylacetonate]] （PFN-NaIr）. The device with the sole aluminium cathode is able to produce a comparably white electroluminescence efficiency of 1.31 cd/A to that of the device using low work function cathodes （such as Ba, Ca, etc.）. The CIE coordinates of the white light emission consisting of red, green and blue three components are nearly at （0.34, 0.35）. The mechanism of the white light emission from the device with the AI cathode is investigated, which is related to the efficient injection of electrons through the interface of PFN-Nalr/AI.     

Efficient White Light Emission Using a Single Copolymer with Red and Green Chromophores on a Conjugated Polyfluorene Backbone Hybridized with InGaN-Based Light-Emitting Diodes

We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode. The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole （BT） and 4,7-bis（2-thienyl）-2,1,3-benzothiadiazole （DBT） as green and red light-emitting units, respectively. For the single copolymer/InGaN hybrid device, the Commission Internationale de 1＇Eclairage （CIE） coordinates, color temperature Tc and color rendering index Ra at 20mA are （0.323,0.329）, 5960K and 86, respectively. In comparison with the performance of red eopolymer PFO-DBT15 （DOF：DBT=85：15 with DOF being 9＇9- dioctylfluorene） and green copolymer PFO-BT35 （DOF：BT=-65：35） blend/InGaN hybrid white devices, it is concluded that the chemically doped copolymer hybridized device shows a higher emission intensity and spectral stability at a high driving current than the polymer blend.     

Enhanced Green Electrophosphorescence from Oxadiazole-Functionalized Iridium Complex-Doped Devices Using Poly（9,9-Dioctylfluorene） Instead of Poly（N-Vinylcarbazole） as a Host Matrix

Optoelectronic properties of the oxadiazole-functionalized iridium complex-doped polymer light-emitting devices （PLEDs） are demonstrated with two different polymeric host matrices at the dopant concentrations 1-8%. The devices using a blend of poly（9,9-dioctylttuorene）（PFO） and 2-（4-biphenyl）-5-（4-tert-butylphenyl）-1,3,4-oxadiazole （PBD） as a host matrix exhibited a maximum luminance efficiency of 11.3 cd/A at 17. 6 mA/cm^2. In contrast, the devices using a blend of poly（N-vinylcarbazole） （PVK） and PBD as a host matrix reveal only a peak luminance efficiency of 6.Scd/A at 4.1 mA/cm^2. The significantly enhanced electrophosphorescent emissions are observed in the devices with the PFO-PBD blend as a host matrix. This indicates that choice of polymers in the host matrices is crucial to achieve highly efficient phosphorescent dye-doped PLEDs.     

A New Conducting Polymer Electrode for Organic Electroluminescence Devices

Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.     

Enhancement of Stability of Polymer Light-Emitting Diodes by Post Annealing

We investigate the effect of thermal annealing before and after cathode deposition on the stability of polymer light-emitting diodes （PLEDs） based on green fluorescent polyfluorene derivative. The annealed PLEDs exhibit improved charge transport and red-shift emission compared to the as-fabricated device. The stability of the PLEDs is largely enhanced by post-annealing before and after Ca deposition, which is attributed to the enhanced charge transport and the intimate contact between the cathode and the emissive layer.     

Improved Blue-Green Electrophosphorescence from a Tuning Iridium Complex with Benzyl Group in Polymer Light-Emitting Devices

Electroluminescence performances from a tuning biscyclometlated iridium complex with benzyl group are demonstrated in double-layered polymer light-emitting devices （PLEDs） using a blend of poly（9,9-dioctylfluorene） and 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole as a host matrix. Blue-green electrophosphorescent emission with a peak at 521 nm and a shoulder at 492nm was observed. The highest luminance efficiency of 4.8cd/A at current density of 0. 56 mA/cm^2 and a maximum luminance of 1944 cd/m^2 at 217.6 mA/cm^2 were achieved in the devices at the dopant concentration of 8%. The luminous performance of the devices becomes better with increasing dopant concentrations from 1% to 8%. This implies that the concentration quenching of this iridium complex with benzyl group can be efficiently inhibited in the devices.     

Efficient Top-Emitting Polymer Light-Emitting Diodes Using Chromium as Anode

We demonstrate a high eftlciency top-emitting polymer light-emitting diode （TPLED） with chromium （Cr） taking as the anode. The TPLED structure is Cr/poly-3, 4-ethylenedioxythiophene （PEDOT：PSS）/poly [2-（4-3＇,7＇- dimethyloctyloxy）-phenyl]-p-phenylenevinylene） （P-PP V） /Ba/Ag. The Cr （ 100 nm） anode is prepared by sputterdepositing in a vacuum chamber. It is found that the device emissive properties are affected dramatically by the thickness of both PEDOT：PSS and the Ag cathode. Optimized thicknesses of PEDOT：PSS and Ag layer are 60nm and 15nm, respectively. The diode exhibits excellent electroluminescence （EL） properties, such as a turn-on voltage of 3.32 V, luminous eftlciency of 4.41 cd/A and luminance of 6989cd/m^2 at driving voltage of about 9 V.     

Organic Light-Emitting Devices with a LiF Hole Blocking Layer

We introduce a thin LiF layer into tris-8-hydroxyquinoline aluminium （Alq3 ） based bilayer organic light-emitting devices to block hole transport. By varying the thickness and position of this LiF layer in Alq3, we obtain an electroluminescent efficiency increase by a factor of two with respect to the control devices without a LiF blocking layer. By using a 10nm dye doped Alq3 sensor layer, we prove that LiF can block holes and excitons effectively. Experimental results suggest that the thin LiF layer may be a good hole and exciton blocking layer.     

Efficient white organic light-emitting devices using 4,7-diphenyl-1,10-phenanthroline as block layer

A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq₃ [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency η_ext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m² at 15 V.     

Organic Light-Emitting Diodes with Magnesium Doped CuPc as an Efficient Electron Injection Layer

Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide （ITO）/copper phthalocyanine （CuPc）/N,N＇-bis-（1-naphthl）-diphenyl-1,1＇-biphenyl-4,4＇-diamine （NPB）/Tris（8-quinolinolato） aluminum（Alq3）/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc （1：2 in weight） shows a brightness of 4312cd/m^2 and a current efficiency of 2.52cd/A, while the reference device exhibits 514 cd/m^2 and 1.25 cd/A.     

Enhanced Electroluminescent Efficiency Based on Functionalized Europium Complexes in Polymer Light-Emitting Diodes

Efficient red polymer light-emitting diodes are fabricated with the single active layer from the blends of poly（N- vinylcarbazole） （PVK） in the presence of 30 wt. % electron-transporting compound 2-（4-biphenylyl）-5-（ptert- butylphenyl）-1,3,4-oxadiazole （PBD） and europium complexes. The polyphenylene functionalized europium com- plex shows an enhanced electroluminescent efficiency due to the large site-isolation effect. For the polyphenylene functionalized europium complex, the maximum external quantum efficiency of 1.90% and luminous efficiency of 2.01 cd A^-1 are achieved with emission peak at 612nm. The maximum brightness is more than 300cd m^-2.     

Solution-processed white organic light-emitting devices based on small-molecule materials

We investigated solution-processed films of 4,4′-bis(2,2-diphenylvinyl)-1,1′-bibenyl (DPVBi) and its blends with N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) by atomic force microscopy (AFM). The AFM result shows that the solution-processed films are pin-free and their morphology is smooth enough to be used in OLEDs. We have developed a solution-processed white organic light-emitting device (WOLEDs) based on small-molecules, in which the light-emitting layer (EML) was formed by spin-coating the solution of small-molecules on top of the solution-processed hole-transporting layer. This WOLEDs, in which the EML consists of co-host (DPVBi and TPD), the blue dopant (4,4′-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and the yellow dye (5,6,11,12-tetraphenylnaphtacene), has a current efficiency of 6.0 cd/A at a practical luminance of 1000 cd/m², a maximum luminance of 22500 cd/m², and its color coordinates are quite stable. Our research shows a possible approach to achieve efficient and low-cost small-molecule-based WOLEDs, which avoids the complexities of the co-evaporation process of multiple dopants and host materials in vacuum depositions.     

Electroluminescence of a Multi-Layered Organic Light-Emitting Diode Utilizing Trans-4-[p-[N-methyl-N-(hydroxymethyl)amino]styryl]-N-Methylphridinium Tetraphenylborate as the Active Layer

Employing an organic dye salt of trans-4-[p-[N-methyl-N-(hydroxymethyl)amino]styryl]-N-methylphridinium tetra\-phenylborate (ASPT) as the active layer, 8-hydrocyquinoline aluminium (Alq₃) as the electron transporting layer and N,N’-diphenyl-N,N’-bis(3-methylphenyl)-[1,1’-biphenyl]-4,4’-diamine (TPD) as the hole transporting layer, respectively, we fabricate a multi-layered organic light-emitting diode and observe the colour tunable electroluminescence (EL). The dependence of the EL spectra on the applied voltage is investigated in detail, and the recombination mechanism is discussed by considering the variation of the hole-electron recombination region.     

Organic electroluminescence channel avoiding triplet excitons

Polarons and bipolarons are main carriers in conducting polymers. It is shown that a bipolaron can open a channel of electroluminescence, which does not involve a triplet exciton, and can enhance the efficiency of electroluminescence. The dynamics of this channel is simulated.     

Influence of Dopant Concentration on Electroluminescent Performance of Organic White-Light-Emitting Device with Double-Emissive-Layered Structure

A novel phosphorescent organic white-light-emitting device （WOLED） with contiguration of ITO/NPB/CBP： TBPe：rubrene/Zn（BTZ）2：Ir（piq）2（acac）/Zn（BTZ）2/Mg：Ag is fabricated successfully, where the phosphorescent dye bis （1-（phenyl）isoquinoline） iridium （Ⅲ） acetylanetonate （Ir（piq）2 （acac）） doped into bis-（2-（2-hydroxyphenyl） benzothiazole）zinc （Zn（BTZ）2） （greenish-blue emitting material with electron transport character） as the red emitting layer, and fluorescent dye 2,5,8,11-tetra-tertbutylperylene （TBPe） and 5,6,11,12-tetraphenyl-naphthacene （rubrene） together doped into 4,4＇-N,N＇-dicarbazole-biphenyl （CBP） （ambipolar conductivity material） as the blue-orange emitting layer, respectively. The two emitting layers are sandwiched between the hole-transport layer N ,N＇-biphenyl-N , N＇-bis （1-naph thyl）-（1,1＇-biphenyl）-4, 4 Cdiamine （NP B） and electron-transport layer （Zn（BTZ）2 ） The optimum device turns on at the driving voltage of 4.5 V. A maximum external quantum efficiency of 1.53%. and brightness 15000 cd/m^2 are presented. The best point of the Commission Internationale de 1＇Eclairage （CIE） coordinates locates at （0.335, 0.338） at about 13 V. Moreover, we also discuss how to achieve the bright pure white light through optimizing the doping concentration of each dye from the viewpoint of energy transfer process.     

Charge carrier injection and transport in polymer blend films

The steady current-voltage characteristics of single layer organic devices based on MEH-PPV and N,N′-diphenyl-N,N′-bis(4′-[N,N-bis(naphth-1-yl)-amino]-biphenyl-4-yl)-benzidine (TPTE) blend with different TPTE concentrations was investigated. The thickness dependence of the current-voltage relationship clearly demonstrates that the current at low voltage and at high voltage are all space charge limited. The current density-electric field characteristic proves the blend polymer LEDs to operate in the tunneling-controlled model. The effective hole mobility is directly determined by space charge limited current at high voltage and increases with increasing TPTE content in the blend. The EL efficiency shows concentration dependence, which is attributed to the change of the transport of holes in the blend film.     

Organic Light Emitting Diodes with an Organic Acceptor/Donor Interface Involved in Hole Injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.     

Nondoped Electrophosphorescent Organic Light-Emitting Diodes Based on Platinum Complexes

An undoped electrophosphorescent organic light-emitting diode is fabricated using a pure platinum（Ⅱ） （2-phenylpyridinato-N, Ca） （3-benzoyl-camphor） [（ppy）pt（bcam）] phosphorescent layer acting as the emitting layer. A maximum power efficiency Tlp of 6.621m/W and current efficiency of 14.78 cd/A at 745 cd/m2 are obtained from the device. The roll-off percentage of ηp of the pure phosphorescent phosphor layer device is reduced to 5% at a current density of 20mA/cm2, which is about 11% for conventional phosphorescent devices. The low roll-off efficiency is attributed to the phosphorescent material, which has the molecular structure of a strong steric hindrance effect.     

Novel transparent Yb-based cathodes for top-emitting organic light emitting devices with high performance

We have studied three kinds of transparent low-work-function Yb-based cathodes for the top-emitting organic light emitting devices (TEOLEDs) with a structure of ITO/NPB/Alq₃/cathodes and compared them with each other. For the Yb/Au cathodes, a series of Yb layers with various thicknesses have been tested and it is found that the Yb layer with a thickness of 4 nm is the optimum one. The Yb:Au (19 nm) and Yb:Ag (19 nm) co-evaporation cathodes possess very high transmittance but relative poor electron injection; whilst the Yb (4 nm)/Au (15 nm) cathode possess a little lower transmittance but much improved electron injection and the TEOLED with this cathode has the highest power efficiency among the TEOLEDs with the three kinds of Yb-based cathodes mentioned above.     

Infrared electroluminescence from a Si MOS structure with Ge in the oxide

We report on room-temperature infrared electroluminescence (EL) from metal-oxide-semiconductor devices made from Si. We compare the luminescence from RF sputtered oxide films containing SiO₂ with and without Ge by using a composite target and luminescence from a SiO₂ layer made by rapid thermal oxidation. The sputtered films were annealed in the temperature range 600-900 °C. This densifies the films and is likely to reduce the concentration of defects. A luminescence peak located around 1150-1170 nm is observed at current densities as low as 0.1 A/cm². The corresponding photon energy is close to that of the Si band gap. In addition, we observe several broad luminescence bands in the range 1000-1750 nm. These bands get stronger with Ge in the SiO₂ film. Some of these bands have previously been suggested and are directly associated with Ge. Since we observe that the intensity is correlated with the presence of Ge while the mere presence of the bands is not, we discuss the EL bands being due to defects which concentration is influenced by Ge in the oxide.