Phonon dispersion in quasiperiodic semiconductor superlattices

The phonon spectra of unstrained and strained quasiperiodic semiconductor superlattices (QSSL) have been calculated using one-dimensional linear chain model. We consider two types of quasiperiodic systems, namely cantor triadic bar (CTB) and Fibonacci sequences (FS), constituting of AlAs, GaAs and GaSb of which the latter two have a lattice mismatch of about 7%. The calculations have been made using transfer matrix method and also with and without the inclusion of strain. We present the results on phonon spectra of two component CTB and two as well as three component FS semiconductor superlattices (SSL), thickness and order dependence on LO mode of GaAs, effect of strain on LO frequency of GaAs. The calculated results show that the strain generated due to lattice mismatch reduces significantly the magnitudes of the confined optical phonon frequency of GaAs.     

Optically active vibrational modes in the photoluminescence line shape of BDMO-PPV films

In this work we simulate the photoluminescence (PL) spectra of BDMO-PPV thin films prepared by spin-coating technique on glass and on copper, as a function of temperature (12-300 K). Simulations were done using two theoretical models based on (i) the SSH theory where the line shape of the purely electronic transition is partly generated by localized states and partly by delocalized states and (ii) the semi-empirical model containing the coupling between localized molecular excitons and vibrational modes in Franck-Condon approach. Four active vibrational modes have been considered: C-C stretching coupled to a C-H bending of the phenyl ring at 1111.5 cm⁻¹, inter-rings C-C stretching at 1282.2 cm⁻¹, CC stretching coupled to a C-H bending of the vinyl group at 1309.3 cm⁻¹, C-C stretching of the phenyl ring at 1580.2 cm⁻¹. Additional vibrational mode of 403 cm⁻¹ associated with C-C-C out-of-plane bending allowed leastwise for this material to adjust well with the characteristic asymmetry of the purely electronic transition. Finally, application of theoretical models are strongly dependent on the well-resolved PL spectra, i.e., electronic transition peak presented a relatively thinner HWHM and an asymmetric line shape.     

Raman and infrared spectroscopical investigation of the optical vibrational modes in GaSb/AlSb superlattices

The vibrational spectrum of ultra-thin layer GaSb/AlSb superlattices was investigated in detail by infrared (IR) and Raman spectroscopies. The effect of confinement of the transverse and longitudinal optical phonons in both types of the layers was studied. The dispersions of optical phonons of the GaSb and the AlSb obtained from the analysis of the Raman and IR spectra are in a good accordance with the theoretical data and results of neutron scattering experiments. First- and second-order Raman spectroscopy indicates the presence of intermixture of atoms at the interfaces in the GaSb/AlSb superlattices. Received: 11 May 1998 / Accepted: 21 July 1998     

Effect of disorders on topological phases in one-dimensional optical superlattices

In a recent paper, Lang et al. proposed that edge states and topological phases can be observed in one-dimensional optical superlattices. They showed that the topological phases can be revealed by observing the density profile of a trapped fermion system, which displays plateaus with their positions. However, disorders are not considered in their model. To study the effect of disorders on the topological phases, we introduce random potentials to the model for optical superlattcies.Our calculations show that edge states are robust against the disorders. We find the edge states are very sensitive to the number of the sites in the optical superlattice and we propose a simple rule to describe the relationship between the edge states and the number of sites. The density plateaus are also robust against weak disorders provided that the average density is calculated over a long interval. The widths of the plateaus are proportional to the widths of the bulk energy gaps when there are disorders. The disorders can diminish the bulk energy gaps. So the widths of the plateaus decrease with the increase of disorders and the density plateaus disappear when disorders are too strong. The results in our paper can be used to guide the experimental detection of topological phases in one-dimensional systems.     

金属插层对一维光子晶体中光传输特性的影响

利用传输矩阵方法,从理论上研究了金属插层对由SiSiO2组成的一维光子晶体中光传输特性的影响.结果表明:由(SiSiO2)n组成的一维光子晶体,考虑到材料的实际吸收及折射率随波长发生变化的情况,当n≥9时,该体系出现全反射带(光子带隙),在(SiSiO2)n光子晶体中的SiO2层的中间插入金属银层,构成(SiSiO2AgSiO2)n金属型一维光子晶体,光子带隙的宽度明显加宽,且在该带隙中s光和p光在0—60°入射角下均具有较低损耗,利用这一特性,可以制作出宽带反射镜 关键词： 光子晶体 金属层 传输矩阵     

Modeling and simulation of vibrational breathing-like modes in individual multiwalled carbon nanotubes

We study the collective vibrational breathing modes in the Raman spectrum of multiwalled carbon nanotubes (MCNTs). First, a bond polarization theory and the spectral moment's method (SMM) are used to calculate the non-resonant Raman frequencies of the breathing-like modes (BLMs) and the tangential-like ones (TLMs). Second, the Raman active modes of MCNTs are computed for different diameters and numbers of layers. The obtained low frequency modes in MCNTs can be identified to each single-walled carbon nanotubes. These modes that originate from the radial breathing ones of the individual walls are strongly coupled through the concentric tube–tube van der Waals interaction. The calculated BLMs in the low-frequency region are compared with the experimental Raman data obtained from other studies. Finally, special attention is given to the comparison with Raman data on MCNTs composed of six layers.     

Dependence of electron dynamics on magnetic fields in semiconductor superlattices

Numerical simulation results are presented for a drift-diffusion rate equation model which describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices （SLs）. The electron dynamics is dependent on the external magnetic field perpendicular to the electron motion direction, and a detailed explanation is given. Using different parameters, the system shows different dynamic behaviors, and three distinct phenomena are observed and controlled by increasing magnetic field. （i） For a lower doping density, the system state transfers from stable state to oscillationary state. （ii） An opposite result is obtained to that in the case （i） for an intermediate value of the doping density, and the state changes from oscillationary to stationary. （iii） The state varies between oscillationary and stationary when doping density is large. Then, a detailed theoretical analysis is given to explain these surprise phenomena. The distribution of the electric-field domain along the SLs is plotted. We find the structure of the domain is almost uniform for a lower doping density, and no domain occurs in the SLs. By adding an external ac signal, complex nonlinear behaviors are observed from the Poincaré map and the corresponding phase diagrams when the driving frequency changes.     

三元合金缺陷层对有限超晶格中局域界面光学声子模的影响

在宏观介电连续近似下，采用转移距阵方法，研究了三元合金缺陷层对有限超晶格中局域界面光学声子模的影响.在这种有限超晶格结构中，可以清楚地看到所有界面模的演化轨迹.结果表明：存在两类局域模，它们的宏观静电势波函数分别局域在缺陷层和表面层附近，且这些模随着超晶格组分层和缺陷层的相对厚度和介电常数的改变，其局域位置和特性发生显著变化.此外，发现虽然能隙中局域模的数目不守恒，但所有界面模的总数守恒.     

Effect of high pressure on the vibrational modes and the energy gap of ZnP2

The pressure dependence of the vibrational modes in ZnP₂ has been investigated by Raman Spectroscopy using a diamond anvil cell, up to 150 kbar pressure. The intrachain phosphorus modes exhibit a strong pressure dependence whereas the low frequency Zn-P modes soften very slightly under pressure. For a crystal which is treated as a molecular crystal this is an unexpected result. It is suggested that the behaviour may be due to a buckling of the phosphorus chain, or due to a double bond promotion between P atoms, or a charge transfer under pressure. The shift in the energy gap has also been measured to 100 kbar hydrostatic pressure. There is a small initial blue shift which gradually changes over to a red shift. However the whole shift in 100 kbar is quite small. Combining the (dEg/dP) _T with the published (dEg/dT) _P the thermal expansion contribution and the electron-phonon interaction contribution were evaluated. The latter dominates the total (dEg/dT) _P of ZnP₂. The authors felicitate Prof. D S Kothari on his eightieth birthday and dedicate this paper to him on this occasion.     

超晶格和层状结构传热特性的连续模型及其在能源材料设计中的应用

层状材料和超晶格结构为提高热电材料和隔热涂层提供了新的设计思路, 并成为最近的研究热点. 应用连续波动方程和线性阻尼理论, 本文研究了此类材料中的声子输运特性. 给出了在整个相空间里的界面调制和声子局域化效应, 得出了超晶格材料热导率的上极限和下极限; 同时, 分析表明界面锐化加强了声子带隙, 使得部分模态的声子局域化加强. 最后, 通过对石墨烯/氮化硼超晶格(G/hBN)和硅/锗超晶格的分子模拟(Si/Ge), 验证了该理论模型. 该方法适用于所有的层状材料和超晶格结构, 对此类新能源材料的设计提供了普适的设计思路.     

应变Si/Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型

为了描述生长在弛豫Si_1-xGe_x层上应变Si n型金属氧化物半导体场效应晶体管(nMOSFETs)反型层中电子迁移率的增强机理,提出了一种新型的、基于物理的电子迁移率模型.该模型不仅能够反映声学声子散射迁移率、表面粗糙度散射迁移率与垂直于半导体-绝缘体界面的电场强度之间的依赖关系,而且也能解释不同的锗组分对两种散射机理的抑制情况从而引起电子迁移率增强的机理.该模型数学表达式简单,可以模拟任意锗组分下的迁移率.通过数值分析验证得出,该 关键词： 应变Si/SiGe 电子迁移率 反型层 模型     

漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响

结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si_1－βGe_β中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值. 关键词： 应变硅金属氧化物半导体场效应管 漏致势垒降低 二维泊松方程 阈值电压模型     

利用拉格朗日方程求解离子在分阱系统中的集体振动模式

介绍了利用拉格朗日方程求解离子在分阱系统中的集体振动模式的基本原理,并具体计算了分阱系统中3个离子的集体振动模式.     

基于ZnS增透膜的顶发射白光有机发光二极管

顶发射白光有机发光二极管(TEWOLED)在白光照明和全彩显示中有着良好的应用前景, 克服顶发射器件中的微腔效应是制备光电性能良好的TEWOLED的前提. 使用具有高折射率的ZnS作为增透膜改善金属阴极在蓝光波段的透射率,降低其反射性, 从而有效抑制了微腔的影响.同时利用转移矩阵理论和宽角干涉方法分别对阴极结构和 蓝光发光层位置进行了优化,最终获得了高效、色纯度良好、色度随视角变化小的TEWOLED. 最高亮度和效率分别达到9213 cd/m²和3 cd/A,色坐标位于白光区且接近白光等能点, 同时具有良好的视角稳定性,在0°---60°范围内色坐标仅变化(0.02, 0).     

Simple theoretical analysis of the thermoelectric power in quantum dot superlattices of non-parabolic heavily doped semiconductors with graded interfaces under strong magnetic field

We study theoretically the thermoelectric power in the presence of a large magnetic field (TPM) in heavily doped III–V, II–VI, PbTe/PbSnTe, strained layer and HgTe/CdTe quantum dot superlattices (QDSLs) with graded structures on the basis of newly formulated electron energy spectra and compare the same with that of the constituent materials. It has been found, taking heavily doped GaAs/Ga_1−xAl_xAs, CdS/CdTe, PbTe/PbSnTe, InAs/GaSb and HgTe/CdTe QDSLs as examples, that the TPM increases with increasing inverse electron concentration and film thickness, respectively, in different oscillatory manners and the nature of oscillations is totally band structure dependent. We have also suggested the experimental methods of determining the Einstein relation for the diffusivity–mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws.     

Effect of local toroidal flow on double-tearing modes in cylindrical geometry

The effect of local toroidal flow (LTF) on double-tearing modes (DTMs) is investigated in cylindrical geometry using the reduced magnetohydrodynamics (RMHD) model. The results indicate that the LTF between the two rational surfaces is the dominant suppression effect on DTMs. The suppression effect is enhanced with the flow width increasing, and the DTMs become more stable with the increase of the shear of the LTF between the two rational surfaces. So, in the reversed shear magnetic field configuration, the local flow is driven between the two rational surfaces, which can effectively suppress the development of DTMs and maintain the high-performance state.     

Low-frequency interlayer vibration modes in two-dimensional layered materials

Two-dimensional (2D) layered materials have been attracted tremendous research interest because of their novel photoelectric properties. If a single atomic layer instead of individual atoms is taken as a rigid motion object, two unique interlayer vibrations, i.e. compression/breathing and shear motions, at ultra-low frequencies can be expected and actually have been observed in many layered materials. The vibrations stem from the interlayer van der Waals interaction and can be well described by a conventional linear-chain model in most cases. The vibration frequencies strongly depend on layer thickness, which enables an accurate determination of layer numbers. A quick and nondestructive determination of flake thickness is particularly important for the materials, since the physical properties can be dramatically changed in the cases of several atomic layers. As a measure of interlayer coupling, the low-frequency modes are also sensitive to the stacking methods of atomic layers and the overlapping of different kinds of 2D materials. This allows the modes to play a key role in the applications like van der Waals heterojunctions. In this paper, we will give a brief review on the experimental observations and theoretical understanding of the interlayer modes in several typical 2D systems, as well as their actual and potential applications.     

Extended nature of coupled optical interface modes in Thue-Morse dielectric superlattices

We investigate coupled optical interface modes in Thue-Morse (TM) dielectric superlattices composed of two kinds of materials with frequency-dependent dielectric functions. Four basic transfer matrices are derived in the dielectric continuum approximation. By a standard matrix operation method, the trace map of the global transfer matrix in this configuration is obtained. Under Born-von Kármán boundary conditions, the frequency spectra are calculated and their branching rules together with the quartet property are elucidated. It is further proved rigorously that nearly all eigenmodes in this framework have extended nature. The quartet of the eigenmodes is illuminated analytically. The common features and pronounced differences compared with coupled optical interface modes in periodic and Fibonacci dielectric superlattices as well as with other collective elementary excitations in TM structures are also revealed. Received 24 September 2002 / Received in final form 11 January 2003 Published online 11 April 2003 RID="a" ID="a"e-mail: gjin@nju.edu.cn