The effect of Ag or Au overlayers on underlying YBa2Cu3O7 thin films

Although Ag and Au are commonly used to provide low-resistance contacts to YBa₂Cu₃O₇ (YBCO), their effect on the electrical properties of the underlying YBCO has been largely neglected. Epitaxial YBCO thin films on LaAlO₃ substrates were used in this study. Thin (50 nm) and thick (1 μm) layers of Ag or Au were deposited as overlayers, and in some cases annealed in oxygen at 550–650°C. Compared to samples with no metal overlayers, for both Ag and Au the normal-state parameters changed (resistivity, its temperature coefficient, and the transition width), whereas the transition temperature and critical current density remained unaltered. These results are encouraging for the use of these metals as contacts and/or conducting overlayers on YBCO.     

RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2

Ohmic contacts to p-type CuCrO₂ using Ni/Au/CrB₂/Ti/Au contact metallurgy are reported. The samples were annealed in the 200–700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of 2 × 10⁻⁵ Ω cm² was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB₂ diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.     

Formation of Ca-doped YBa2Cu4O8 phase in thin films

Ca-doped YBa₂Cu₄O₈ (124) thin films are prepared on (100) SrTiO₃ substrates by annealing the amorphous films deposited using a pulsed laser deposition technique. The X-ray diffraction measurements show that the Ca-doped YBa₂Cu₄O₈ phase is formed by annealing below 800°C at a oxygen pressure of 1 atm. The 124 films have c-axis orientation normal to the substrates. As the Ca content increases, the proportion of the 123 impurity phase in the samples increases. The onset temperature of superconductivity of the Y(Ca)Ba₂Cu₄O₈ films increases from 79 K to 88 K with an increase Ca-substitution for 5 to 10% of Y.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Fabrication of Y123 disk by the seeded infiltration and growth method

The seeded infiltration and growth process was used to prepare disks of Y123. This process produces a net-shape product with a uniform distribution of Y211 with a majority of the particles under 2 μm. The Y211 area fraction remained constant at about 27% for different cooling rates in the range 0.5–4°C/h. The critical current density at 77 K was determined to be in excess of 100 000 A/cm² under zero field and about 20 000 A/cm² under 1.5 T magnetic field, which indicates that this method is a good replacement for the conventional melt-texturing process.     

Ln1−xSrxCoO3(Ln = Sm, Dy) for the electrode of solid oxide fuel cells

The perovskite-type oxides were synthesized in the series of Ln_1−xSr_xCoO₃(Ln = Sm, Dy). The formation of solid solutions in Dy_{1 − x}Sr_xCoO₃ was limited, compared with that in Sm_{1 − x}Sr_xCoO₃. The electrical conductivities of the sintered samples were measured as a function of x in the temperature range 30 to 1000 °C. The highest conductivity of around 500 S/cm at 1000 °C was found in Sm_0.7Sr_0.3CoO₃. The reactivity of all the samples with YSZ was examined at 800–1000 °C for 96 h. The Sr-doped perovskite oxides were more reactive with YSZ and produced SrZrO₃ at 900 °C after 96 h. However, no reaction product between SmCoO₃ and YSZ was observed at 1000 °C for 96 h. The cathodic polarization of the oxide electrodes, sputtered on yttria stabilized zirconia (YSZ), was studied at 800–1000 °C in air. SmCoO₃ shows no degradation of the electrode performance at higher temperatures. The thermal expansion measurements on the sintered samples were carried out from room temperature to 1000 °C. Large thermal expansion coefficients were found in these samples.     

Nanocrystalline Pr0.5Sm0.5Co5 alloy obtained by mechanical milling

Starting from arc-melted alloys, nanostructured Pr_0.5Sm_0.5Co₅ powders were synthesized by mechanical milling and subsequent vacuum annealing during short times to develop an optimal microstructure with high hard magnetic properties. The best magnetic properties were obtained for the stoichiometric Pr_0.5Sm_0.5Co₅ powders milled for 4 h and annealed at 800 °C for 1 min with a high coercitivity of 13.5 kOe, a high M_r/M_max ratio of 0.72 and a maximum energy product of 11 MGOe. From X-ray diffraction and transmission electron microscopy, CaCu₅-type phase and an average grain size of about 12 nm were determined in the annealed powders, and we calculated that 59% of the volume of the grains/crystallites are exchange-coupled. The observed magnetic hardening is associated to the high magnetic anisotropy field of the PrCo₅ and SmCo₅ phases and also to the microstructure developed by the processing used.     

Magnetic anisotropy induced in Nd16Fe76B8 by Hf additions

Remanence, coercivity and maximum energy product (BH)_max of Nd₁₆Fe_76−xHf_xB₈ (x=0, 0.1, 0.2) magnets processed under different hydrogenation-disproportionation-desorption-recombination (HDDR) conditions, were studied. Vibrating sample magnetometry results showed that Hf-doped materials develop an important degree of anisotropy, especially for the case of solid-HDDR treatments at 800°C and 850°C, with the largest effect at 850°C. Maximum values of remanence and coercivity were observed for Hf-added samples S-HD at 850°C, and 900°C, respectively. The highest (BH)_max value was also observed in S-HD 900°C Hf-added samples. These results are discussed in terms of the expected microstructure of the intermediate HD and final HDDR processed powders.     

New experimental evidence of the structural modification in single crystal Bi2Sr2CaCu2Oy by X-ray diffraction observation

The variations of the high angle 00 peak-shape by means of X-ray l scans of the 00l fundamental reflections were investigated in detail for a highly oriented Bi₂Sr₂CaCu₂O_y (Bi2212) crystal with sufficiently small intrinsic mosaicity and the same crystal annealed in air at 250, 300, 400, 600, and 750°C for 20 h in consequence. For the first time, we observed a new additional reflection almost overlapped original 00l fundamental reflection at annealing temperature below 400°C by X-ray diffraction measurement, which shows that there coexisted two sets of lattice periodicity in the c-direction of the annealed crystal. The new additional reflection appeared at 250°C and disappeared at 400°C. Its intensity was increased at 300°C. The measurements of the AC susceptibility, c-axis parameter and full width at half maximum (FWHM) of the 00 peaks showed that the new additional reflection was associated with the oxygen diffusion in CuO₂ planes and the changes of strain field. The results provide the new experimental evidence that the structural distortion is more sensitive to the oxygen diffusion in CuO₂ planes than to that in Bi–O layers.     

Superconductivity, Ca content and oxygen deficiency of Ga(Sr,Ca)2(Yb,Ca)Cu2O7

Superconducting transition temperature (T_c), Ca content and oxygen deficiency are studied on GaSr_1.8Ca_0.2Yb_1−xCa_xCu₂O₇ (x≤0.35). Superconducting samples with T_c=52 K are prepared after the annealing at 20 MPa of oxygen. The T_c is reduced through a slight oxygen loss accompanied by annealing in air above 650°C. The oxygen loss suggests the presence of short Cu–O chains in the GaO₄ slab. The formal valence of planar Cu required for the appearance of superconductivity depends on oxygen and Ca contents. The critical formal Cu valences are 2.105 and 2.125 for the samples annealed in air at 600°C and at 835°C, respectively. The values are higher than those of usual high-T_c superconductors. This can be explained by a high concentration of localized holes in the CuO₅ slab.     

Structure and magnetic properties of magnetron-sputtered [(Fe/Pt/Fe)/Au]n multilayer films

Using dc magnetron sputtering, Fe/Pt/Au multilayer films were prepared, and the effects of Au layer thickness and annealing temperature on structure and magnetic properties of the Fe/Pt/Au multilayer films were investigated. The as-deposited Fe/Pt/Au multilayer films have good periodic structure with composition modulation along the growth direction. The stress stored in the as-deposited films promoted the ordering of the films annealed at 400 °C. When the films were annealed at 500 °C, the thicker Au layer could restrain the order-disorder transformation region volume and lead to the decrease of the ordered volume fraction with Au layer thickness increasing.     

The origin of photoluminescence in Ge-implanted SiO2 layers

Ge ions were implanted at 100 keV with 3×10¹⁶ cm⁻² into a 300  nm thick SiO₂ layer on Si. Visible photoluminescence (PL) around 2.1 eV from an as-implanted sample is observed, and faded out by subsequent annealing at 900°C for 2 h. However, PL shows up again after annealing above 900°C at the same peak position. Compared with the as-implanted sample, significant increase of Ge–Ge bonds is measured in X-ray photoelectron spectroscopy, and the formation of Ge nanocrystals with a diameter of 5 nm are observed in transmission electron microscopy from the sample annealed at 1100°C. We conclude that the PL peak from the sample annealed above 900°C is caused by the quantum confinement effects from Ge nanocrystals, while the luminescence from the as-implanted sample is due to some radiative defects formed by Ge implantation.     

Effects of processing variables on the magnetic properties of melt-processed YBa2Cu3Ox

Samples of YBa₂Cu₃O_x (Y123) with excess Y₂BaCuO₅ (Y211) in the molar ratio of 5:1 (Y123/Y211) were processed using the SLMG (‘solid-liquid melt growth’) technique. The effects of precursor particle size, thermal pretreatment, and substrate choice were examined. Particle size was shown to accelerate degradation of the BaCuO₂ precursor. Thermal pretreatment resulted in reduction of porosity in the samples and hence improved magnetic properties. Contamination by carbon and magnesium from the substrates was also examined and eliminated by using BaZrO₃ substrates.     

Synthesis and physical behaviour of In2S3 films

In₂S₃ layers have been grown by close-spaced evaporation of pre-synthesized In₂S₃ powder from its constituent elements. The layers were deposited on glass substrates at temperatures in the range, 200–350 °C. The effect of substrate temperature on composition, structure, morphology, electrical and optical properties of the as-grown indium sulfide films has been studied. The synthesized powder exhibited cubic structure with a grain size of 63.92 nm and S/In ratio of 1.01. The films grown at 200 °C were amorphous in nature while its crystallinity increased with the increase of substrate temperature to 300 °C. The films exhibited pure tetragonal β-In₂S₃ phase at the substrate temperature of 350 °C. The surface morphological analysis revealed that the films grown at 300 °C had an average roughness of 1.43 nm. These films showed a S/In ratio of 0.98 and a lower electrical resistivity of 1.28 × 10³ Ω cm. The optical band gap was found to be direct and the layers grown at 300 °C showed a higher optical transmittance of 78% and an energy band gap of 2.49 eV.     

Solid-state electrochemical CO2 sensor by coupling lithium ion conductor (Li2CO3-Li3PO4-Asl2O3) with oxide ion-electron mixed conductor (La0.9Sr0.1MnO3)

A solid-state electrochemical cell of the type O₂(air), PtLa_0.9Sr_0.1MnO₃/Li₂CO₃(+5 mol% Li₃PO₄ + 6 mol% Al₂O₃)/Au, CO₂, O₂ was composed to determine CO₂ concentration, where Li₂CO₃, a lithium ion conductor, was used as an electrolyte, and the perovskite-type oxide (La_0.9Sr_0.1MnO₃)/O₂-electrode as a reference electrode. The electromotive force (EMF) of the cell was found to be proportional to the logarithm of CO/₂ partial pressure in CO₂/O₂/N₂ gas mixtures at temperatures between 300 and 400 °C. The EMF responded to changes of CO₂ partial pressure within 1 min at 400 °C. The sensitivity to CO₂ of this cell was not affected by coexistence of O₂, and the EMF remained constant after the first 15 days. The mechanism for sensing CO₂ is discussed.     

Electrical and structural properties of epitaxially grown Y1Ba2Cu3O7 − x and Y2Ba4Cu8O16 − x thin films using the BaF2 method

Thin films of Cu, Y and BaF₂ are co-condensed in ultrahigh vacuum onto SrTiO₃ (1 0 0)-substrates at room temperature without any additional oxygen supply. It is found that the temperature of the ex situ fluorine-oxygen exchange reaction in flowing wet oxygen essentially determines whether the Y₁Ba₂Cu₃O_{7 − x}-phase (T_ex = 850°C) or the Y₂Ba₄Cu₈O_{16 − x}-phase (T_ex = 800°C) forms or any mixture of both phases in between. Small-angle X-ray diffraction verifies the strictly epitaxial growth of the superconducting phases. The variation of the composition around the ideal 1,2,3-stoichiometry affects only the superconducting and normal conducting properties which are measured using the four-probe Montgomery method. The values of the normal state resistivity and its temperature dependence are discussed in combination with a reduced cross section of the conduction paths in the films.     

Structure and optical properties of sol–gel derived Gd2O3 waveguide films

Pure and rare earth doped gadolinium oxide (Gd₂O₃) waveguide films were prepared by a simple sol–gel process and dip-coating method. Gd₂O₃ was successfully synthesized by hydrolysis of gadolinium acetate. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) were used to study the thermal chemistry properties of dried gel. Structure of Gd₂O₃ films annealed at different temperature ranging from 400 to 750 °C were investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that Gd₂O₃ starts crystallizing at about 400 °C and the crystallite size increases with annealing temperature. Oriented growth of (4 0 0) face of Gd₂O₃ has been observed when the films were deposited on (1 0 0) Si substrate and annealed at 750 °C. The laser beam (λ=632.8 nm) was coupled into the film by a prism coupler and propagation loss of the film measured by scattering-detection method is about 2 dB/cm. Luminescence properties of europium ions doped films were measured and are discussed.     

ZrB2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO

There is a strong interest in developing thermally stable metallization schemes for ZnO and boride-based contact stacks are expected to have potential because of their thermodynamic stability. The contact characteristics on bulk single-crystal n-ZnO of a ZrB₂/Pt/Au metallization scheme deposited by sputtering are reported as a function of annealing temperature in the range 300-800°C. The contacts were rectifying for anneal temperatures <500 °C but exhibited Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 9 × 10⁻³ Ω cm after 700 °C anneals. The contact stack reverts to rectifying behavior after annealing above 800 °C, coincident with a degraded surface morphology and intermixing of the Au, Pt and ZrB₂. The boride-based contacts exhibit higher thermal stability but poorer specific contact resistivity than conventional Ti/Au metal stacks on ZnO.     

Characteristics of TL and PTTL glow curves of gamma irradiated pure Li2B4O7 single crystals

The TL glow curve of X-ray irradiated pure and Cu-doped Li₂B₄O₇ shows that the most intense TL peak is at 160°C. In the present work the characteristics of the TL and PTTL glow curves from gamma irradiated pure Li₂B₄O₇ single crystal samples (prepared by Mitui Kinzoku Kougyo, Japan) have been studied. The samples were irradiated with different gamma doses (from 0.5 up to 500 Gy) using a ⁶⁰Co gamma ray source at a dose rate of 78 Gy h⁻¹. The TL glow curve shows three intense peaks (at 160°C, 260 and 305°C) and three weak ones (at 110, 140 and 220°C). The most intense TL peak is at 160°C, which agrees with the TL glow curve from X-ray irradiated samples [Kutomi Y. and Tomita A. (1990) TSEE and TL of Li₂B₄O₇:Cu single crystals. Radiat. Prot. Dosim. 33, 347–350]. The 305°C peak in gamma irradiated samples also appears to be very intense, which indicates its possible use in high-dose high-temperature dosimetry. Further, the characteristics of the PTTL glow curve have been studied as a function of ultraviolet exposure and number of repeated PTTL cycles.