We have investigated the relationship between the energy levels of an emissive layer and the modulation rate of organic light-emitting diodes (OLEDs) based on a distyrylbenzene derivative, 1,4-bis[2-[4-[N,N-di(p-tolyl)amino]phenyl]vinyl]benzene (DSB). By utilizing DSB as an emitting material, a high modulation rate can be realized because of the short fluorescence lifetime of 0.2 ns of DSB. Furthermore, we also found that an energy gap between an emissive layer and an adjacent organic layer is an important parameter to improve modulation rate. DSB-doped 4,4-bis(2,2-ditolylvinyl)biphenyl is the best combination of all the organic materials used in this study, and the fastest cutoff frequency of 10 MHz has been achieved for the OLED in spite of the large emitting area of 1 mm(2). 相似文献
A bright white quantum dot light-emitting device(white-QLED) with 4-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-2- [3-(tri-phenylen-2-yl)phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m~2@8 V with the Commission Internationale de l'Eclairage(CIE) chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence(EL) spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED. 相似文献
We report the studies on photoluminescence (PL) and electroluminescence (EL) spectra of organic light emitting diodes (OLED) based on most widely used light emitting material, i.e., Tris-(8-hydroxyquinoline) aluminum (Alq3). PL studies from the edges and top surface were carried out on different thicknesses of single layer of Alq3 coated on glass substrate and the PL intensity from the edges was found to be more than that from the top surface. On the other hand EL emission intensity from the surface was found to be larger than that from the edges of the OLED device. The discrepancy in the PL and EL emission from edge and the top surfaces is discussed. The effect of the thickness of Alq3 layer on the PL intensity and the emission spectra are also investigated. 相似文献
In this paper, the optical properties of a novel organic, 2,8-di(t-butyl)-5,11-di[4(t-butyl) phenyl]-6,12-diphenylnaphthacene (tetra(t-butyl)rubrene) have been investigated. Our results show that there are two peaks in the photoluminescence (PL) spectra of tetra(t-butyl)rubrene (TBRb) which are also confirmed in the electroluminescence (EL) spectra. Photo-quenching of the PL intensity is observed when the irradiation time increases. It is shown that oxidation is the dominant reason for photo-quenching. The absolute refractive index and absorption coefficient have also been determined and the results correlate well with the PL results. The results show that TBRb can be a good dopant to achieve the Förster energy transfer and to assist light emission. The optical properties of TBRb are similar to those of rubrene; however, the PL of TBRb is much stronger than that of rubrene. Finally, although crystalline organics have been commonly reported by heating the sample, we report crystallization of TBRb at low temperature <230 K when the TBRb film is in an amorphous form before cooling. PACS 78.47.+p; 78.55.-m; 81.05.Lg; 85.60.-q 相似文献
Electroluminescence (EL) and photoluminescence (PL) have been studied on multi-layer organic light-emitting diode (OLED) devices based on phosphorescent platinum octaethyl porphine (PtOEP) molecule. A multi-layer OLED (called Pt5) which has 100% PtOEP without doping in host as the emitting layer is investigated and compared its EL and PL characteristics with those of the other OLEDs (Pt2 and Pt3) with emitting layer of PtOEP doped in 4,4′-N,N′-dicarbazole-biphenyl (CBP) host material. It is observed that Pt5 shows a lower EL efficiency than Pt2 and Pt3. Three broad EL bands are observed at 500, 527 and 570 nm in the multi-layer device in addition to red sharp EL band due to PtOEP in Pt5, while only the red PtOEP EL is observed in Pt2 and Pt3. The 500, 527 and 570 nm EL peaks arise from absorption of the broad 525 nm Alq3 emission band by PtOEP layer. The emission from the Alq3 electron-transport layer is caused by the carrier leakage from the hole-blocking BAlq layer. The intensity of red EL due to PtOEP is much weaker in Pt5 than in Pt2. Taking into account the result of PL, it is suggested that highly efficient energy transfer from CBP host to PtOEP guest occurs in Pt2 and Pt3, giving rise to higher PtOEP luminance, while concentration quenching occurs in PtOEP layer in Pt5. 相似文献
BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs. 相似文献
BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs. 相似文献
A C3-symmetric triphenylbenzene based photoluminescent compound, 1,3,5-tris(4′-(N-methylamino)phenyl) benzene ([NHMe]3TAPB), has been synthesized by mono-N-methylation of 1,3,5-tris(4′-aminophenyl) benzene (TAPB) and structurally characterized. [NHMe]3TAPB acts as a selective fluorescent sensor for picric acid (PA) with a detection limit as low as 2.25 ppm at a signal to noise ratio of 3. Other related analytes (i.e. TNT, DNT and DNB) show very little effect on the fluorescence intensity of [NHMe]3TAPB. The selectivity is triggered by proton transfer from picric acid to the fluorophore and ground-state complex formation between the protonated fluorophore and picrate anion through hydrogen bonding interactions. The fluorescence lifetime measurements reveal static nature of fluorescence quenching. 相似文献
The mixed cohosts of electron transport host (E-host): 4,40-bis(carbazol-9-yl)biphenyl (CBP) have been comparatively investigated for an efficient green fluorescent organic light emitting diode (OLED) doped with a thermally activated delayed fluorescence (TADF) emitter (4s,6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN). The E-host:CBP systems significantly enhance the electroluminescent (EL) properties. After doping E-host, the lifetime of the emissive layer decreases and the surface becomes smoother, together with the impedance decreases for one magnitude and the hole-injection depresses. The charge balance and improved interface both contribute to the EL performance enhancement. Here we develop a universal mixed host system suitable to most of emitters. 相似文献
In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS2. µ‐Raman, µ‐photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) are utilized to probe the fluorescence lifetime and photoluminescence properties of individual flakes of MoS2 films. Usage of these three techniques allows identification of the grown layers, grain boundaries, structural defects and their relative effects on the PL and fluorescence lifetime spectra. Our investigation on individual monolayer flakes reveals a clear increase of the fluorescence lifetime from 0.3 ns to 0.45 ns at the edges with respect to interior region. On the other hand, investigation of the film layer reveals quenching of PL intensity and lifetime at the grain boundaries. These results could be important for applications where the activity of edges is important such as in photocatalytic water splitting. Finally, it has been demonstrated that PL mapping and FLIM are viable techniques for the investigation of the grain‐boundaries.
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