Collective excitations in fast ion conductor superlattices

Within the framework of the electromagnetic theory, the collective modes in the superlattice system composed of superionic conductors and ionic crystals are studied. The superionic conductor is described by the hydrodynamical model in which the anion cage is immersed in the cation liquid. The behavior of the modes are analysed in terms of the coupling strength between excitations pertaining to different layers. The coupling strength is controlled by varying the slab thicknesses. An interesting behavior in which the diffusion mode transforms to the relaxation mode when the coupling strength is varied from strong to weak is obtained. Also, the effect of the coupling strength on the acoustical and optical modes are shown.     

Double phase transition in highT c superconductors

Experiments have revealed that some samples of high-T _c ceramic superconductors possess a double peak structure in the specific heat. We shall show that within a BCS formalism it is possible to explain this double peak as a pure superconduction phenomenon. An important feature of the model is the onsite pairing interaction term which turns out to determine the difference between the two peaks.     

Elastic Modulus and Hardness of Cr-Nb Nano-Multilayers

Cr-Nb nano-multilayered films with various modulation wavelengths A are prepared by e-gun evaporation and their mechanical properties are investigated. Cr and Nb both have bcc structures with large differences in lattice constants and Young＇s modulus, which are supposed to favour modulus enhancement. Nevertheless, nano-indention measurements show no enhancement for the modulus and a slight decrease for the hardness with decreasing A down to 5 nm. This is mainly due to counter-contribution to modulus from adjacent layers subjected to reverse strains, in agreement with recent theoretical study, while the decrease of hardness arises from grain boundary sliding. Interestingly, at A = 3 nm, the hardness of the film has an increase of 44% relative to the value of a rule of mixture, owing to the emergence of a new phase for reconciling the structure difference at the interfaces.     

Ground state energy of the electron-hole liquid in type-II (GaAs)m/(AlAs)m quantum wells

The ground state energy of quasi-two-dimensional electron-hole liquid (EHL) at zero temperature is calculated for type-II (GaAs)_m/(AlAs)_m (5≤m≤10) quantum wells (QWs). The correlation effects of Coulomb interaction are taken into account by a random phase approximation of Hubbard. Our EHL ground state energy per electron-hole pair is lower than the exciton energy calculated recently for superlattices, so we expected that EHL is more stable state than excitons at high excitation density. It is also demonstrated that the equilibrium density of EHL in type-II GaAs/AlAs QWs is of one order of magnitude larger than that in type-I GaAs/AlAs QWs.     

Temperature-dependent ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films

To investigate temperature-dependent ferroelectric and dielectric properties of ferroelectric films, Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. The ferroelectric and dielectric behaviors have been studied in a wide temperature range from 80 K to room temperature. The saturated polarization (P_sat) decreases with decreasing temperature and decreasing electric field, whereas remnant polarization (P_r) shows a more complex temperature dependence. These results, which can be well explained based on a temperature-dependent charged defects-domain wall interaction model, might be helpful for further understanding the domain switching behavior. Based on these results, an alternative way to investigate temperature-dependent ferroelectric fatigue is proposed and experimentally carried out. The measured fatigue rate is found to be linearly dependent on temperature, consistent with the report on Pb(Zr,Ti)O₃ films. Temperature-dependent dielectric measurements of the films further confirm the above explanation.     

Temperature dependent preferential sputtering in CoSi2 and NbSi2

Sputtering of CoSi₂ and NbSi₂ has been carried out by Xe ion bombardment at room temperature, as well as at elevated temperatures putting these systems in their radiation-enhanced diffusion regimes. The range of the Xe ions (at 200–260 keV) was appreciably less than the thickness of the silicides. The samples were analyzed by 2 MeV He⁺ backscattering spectrometry, x-ray diffraction and optical microscopy. The ratio of the sputtering yield of Si to that of the metal (i.e., Co or Nb) always exceeds the stoichiometric ratio 21, leading to Si depleted surface layers. The amount of the sputtered species increases almost linearly with dose until intermixing of the silicide with the underlying Si becomes appreciable. This happens at lower doses in the radiation-enhanced diffusion regime than at room temperature. Irradiation of CoSi₂ samples at high temperature leads to a broadening of the implanted Xe profile compared to the room temperature profile. No such phenomenon has been found in NbSi₂. The effect of Xe broadening on the sputtering yields is discussed.     

Microscopic growth mechanisms for carbon and boron-nitride nanotubes

Received: 27 November 1998 / Accepted: 18 December 1998     

p-type porous-silicon transducer for cation detection: effect of the porosity, pore morphology, temperature and ion valency on the sensor response and generalisation of the Nernst equation

This paper shows the possibility of using oxidised porous silicon (PS) as a transducer material for ion-sensor applications. It aims to study the over-Nernstian behaviour of the porous electrodes towards the concentration of cations in contact. The dependence of the sensitivity on the porosity of the samples prepared from highly doped substrates has been studied. Maximal values of over-Nernstian sensitivities around 240 mV/pNa and ∼92 mV/pCu, corresponding to a PS-layer porosity of about 65%, obtained respectively from p⁻ and p⁺ silicon substrates, have been registered. Furthermore, the effect of the porous nanostructure morphology has been studied, by preparing PS samples from weakly doped wafers. The porous-silicon-based sensor behaviour for different PS-layer thicknesses has also been experimentally investigated. According to these results, a physical model has been proposed to explain the mechanisms which govern the charge-carrier transfer from one side to the other of the functionalised oxide layer, and leads to the over-Nernstian adsorption of the cationic species at the electrolyte/SiO₂ interface. Afterwards, the Nernst relation has been generalised accordingly, on one hand, to the previous experimental results, and on the other hand, to the results obtained about the ion-valency and the electrolyte-temperature effects on the sensor responses. Received: 15 December 2000 / Accepted: 18 December 2000 / Published online: 23 March 2001     

A model for growth directional features in silicon nanowires

Long silicon nanowires (SiNWs) grown by laser ablation or by thermal evaporation of monoxide source materials are primarily oriented in the <112> direction, and some in the <110> direction, but rarely in the <100> or <111> directions. We propose a model to explain these SiNW growth directional features. The model consists of two parts. Part one is concerned with mechanism-based criteria and part two with applying these criteria to explain the experimental results. Four criteria are considered: (i) the stability of a Si atom occupying a surface site; (ii) the Si {111} surface stability in the presence of oxygen; (iii) the stepped Si {111} surface layer lateral growth process; and (iv) the effect of dislocations in providing perpetuating {111} steps to facilitate SiNW growth. Analyses of SiNW growth in accordance with these criteria showed that <112> and <110> are the preferred SiNW growth directions, and that <111> and <100> are not. Received: 12 November 2001 / Accepted: 20 November 2001 / Published online: 23 January 2002     

Growth and characterization of ultrathin GaP layer in a GaAs matrix by X-ray interference effect

An ultrathin two monolayers thick layer of GaP sandwiched within a GaAs matrix was grown by atomic layer molecular beam epitaxy (ALMBE). The X-ray interference effect (Pendellösung) was used to determine the structural parameters such as thickness, lattice parameter, chemical composition, and strain. Excellent agreement between the experimental rocking curve and the simulation using the dynamical theory of X-ray diffraction was found indicating the high quality of the sample. Analysis of the scans in symmetrical (004) and asymmetrical (224) reflections, sensitive to both perpendicular and parallel strain, shows that the GaP layer is coherent with the substrate, i.e., it is below the critical thickness in agreement with critical thickness theories. Despite the competition for incorporation between arsenic and phosphorus the experimental GaP thickness is found to be identical to the nominal growth value, demonstrating full incorporation of phosphorus when growing by ALMBE. No significant out-diffusion or segregation of P is observed.     

Effect of elastic anisotropy on the strain fields and band edges in stacked InAs/GaAs quantum dot nanostructures

The effect of elastic anisotropy on the strain fields and confinement potentials in InAs/GaAs quantum dot (QD) nanostructures was investigated for an isolated dot and a stacked multi-layer dots using finite element analysis and model solid theory. The assumption of isotropy tends to underestimate especially hydrostatic strain that is known to modify confinement potentials in conduction band. Consideration of anisotropy results in a wider band gap and shallower potential well as compared with the isotropic model. Since the band gap and potential well depth would be related to opto-electronic properties of quantum dot systems via quantum mechanical effects, it is suggested that consideration of elastic anisotropy in the calculation of strains and band structures is necessary for the design of QD-based opto-electronic devices.     

Self-assembling of gold nanoparticles in one, two, and three dimensions

In the present work, we report the growth of ordered arrays of gold nanoparticles passivated with n-alkylthiol molecules using crystallization in toluene vapor. We kept constant the average particle size and the length of the passivating molecule (1-dodecanethiol). The temperature and time of growth were varied. We show that in the initial stages of the growth, nano-chains of particles are produced. These nano-chains aggregate to form two-dimensional arrays. In the initial stages the nano-chains form a two-dimensional square lattice which then relaxes to a close-packed structure. In latter stages of growth a three-dimensional supercrystal is produced. It is found that the packing of nanoparticles corresponds to an average FCC lattice. However, large variations on the local parameters of the lattice are observed. Near the edges of the supercrystal the anomalous packing reported by Zanchet et al. [20] and Fink et al. [21] was observed. The energy of the observed structures is analyzed using molecular dynamics simulation. It is concluded that using the vapor growth method, it is possible to produce controlled ordered structures from one to three dimensions. Received: 24 February 2000 / Accepted: 28 March 2000 / Published online: 13 July 2000     

A comparison of hydrogen incorporation and effusion in doped crystalline silicon,germanium, and gallium arsenide

The incorporation of deuterium into crystalline silicon, germanium, and gallium arsenide from a plasma source is investigated as a function of sample temperature during the plasma treatment. The total amount of incorporated deuterium and its bonding states are characterized by the thermal effusion (TE) technique for different dopants and doping levels. In all samples investigated, we find a strong influence of the passivation temperature on these quantities; however, there are large differences between different semiconductors and for different doping levels or dopants. The results are discussed in terms of plasma-induced defects, dopant-deuterium complexes, and surface effects.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Ti:LiNbO3 optical waveguides

Various experiments on Ti diffused optical waveguides in LiNbO₃ have been carried out in order to determine precisely the character of the diffusion process. The required guide parameters and the effective mode indices could be controlled by adjusting only the diffusion time under fixed temperature and film thickness. Therefore the dependence of the guide characteristics on the diffusion time has been investigated in detail. On the basis of the data obtained, a two-stage diffusion model is proposed. In the first stage, the Ti diffusant profile is described by a erfc-function, and the second stage is characterized by a modified Gaussian form.     

Growth and Auger electron spectroscopy characterization of donut-shaped ZnO nanostructures

Zinc oxide (ZnO) nanodonuts have been obtained by vapor phase transport process utilizing a mixture of ZnO, graphite and erbium oxide powder as the evaporation source. ZnO nanodonuts prepared under various thermal processes indicate that ZnO nanodonuts start forming during the initial thermal ramp up stage. A subsequent holding of the growth temperature at 1000 °C causes the nanodonut to evolve into perfectly donut-shaped nanostructure. Additional deposition of ZnO on top of the nanodonut during the holding of the furnace temperature at 1000 °C result in partially filled nanodonuts or hemispherical nanostructures, or donuts that are completely buried beneath ZnO film. Auger electron spectroscopy depth profile analysis indicates that the deposited ZnO film is stoichiometric, whereas the nanodonuts and the completely filled hemispherical nanostructures are porous and are oxygen deficient. The volume density of the nanodonut is estimated to be 20% that of the background ZnO film.     

Thermal annealing of a-Si:H/a-SiNx:H multilayers

The crystallinity of Si/SiN_x multilayers annealed by a rapid thermal process and furnace annealing is investigated by a Raman-scattering technique and transmission electron microscopy. It is found that the crystallization temperature varies from 900 °C to 1000 °C when the thickness of a-Si:H decreases from 4.0 nm to 2.0 nm. Raman measurements imply that the high crystallization temperature for the a-Si:H sublayers originates from the confinement modulated by the interfaces between a-Si:H and a-SiN_x:H. In addition to the annealing temperature, the thermal process also plays an important role in crystallization of a-Si sublayers. The a-Si:H sublayers thinner than 4.0 nm can not be crystallized by furnace annealing for 30 min, even when the annealing temperature is as high as 1000 °C. In contrast, rapid thermal annealing is advantageous for nucleation and crystallization. The origin of process-dependent crystallization in constrained a-Si:H is briefly discussed. Received: 11 April 2001 / Accepted: 20 June 2001 / Published online: 30 August 2001     

The influence of the solubility limit on diffusion of as implants in silicon

Enhanced diffusion of implanted arsenic impurities in silicon during subsequent thermal annealing can be interpreted in terms of a system of reaction-diffusion equations. It is shown that for high doses the local solubility limit can considerably influence the reactions between the defects involved and thus markedly change the effective diffusion of As donors. A similar effect can be brought about by the presence of predoped donors/acceptors, which also can significantly accelerate/retard the effective diffusion of As implants. Furthermore, an explanation of some precipitation/clustering processes during a rapid/slow cooling-down is proposed. Finally, several contradictory experimental results published previously will be shown to be compatible with the present model.     

Diffusion amorphization and interface properties of FeB multilayers

Received: 3 September 1996/Accepted: 6 January 1997     

A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium

The composition and size of optically active Cd_xZn_1−xSe/ZnSe quantum dots are estimated with a previously developed method. The results are then compared with those obtained for Cd_xZn_1−xSe/Zn_0.97Be_0.03Se QDs. We show that introducing Be into the barrier material enhances both Cd composition and quantum size effect of optically active quantum dots.