O2的化学吸附对2H—MoS2(0001)清洁表面和离子溅射表面电子结构的影响

利用低能N⁺(0.5keV)离子轻微轰击2H-MoS₂(0001)清洁表面,从UPS(HeⅠ,HeⅡ)得到d电子峰向E_F移动,价带顶出现明显的“肩膀”或带尾,它随轰击时间的增加而增强,同时使d_(z²)带变宽。UPS的结果表明,这种表面在室温下有明显的O₂吸附活性,O₂吸附后这个肩膀明显下降。结合XPS,AES和LEED的研究,我们认为这个“肩膀”态与次表面原子层的Mo原子的d电子的暴露和最外表面原子层s原子空位缺陷的产生有关。这些新的表面电子态与加氢脱硫(HDS)催化活性中心有密切的关系。 关键词：     

SrRuO3的电子结构与磁性研究

用自洽的全势能线性丸盒轨道能带方法计算了氧化物体系SrRuO₃(SRO)的电子结构和磁性.对于理想的立方钙钛矿结构的计算得出的电子结构明显改善了已有的计算结果:每个元胞的磁矩为129μ_B,按原子球划分为084μ_B/Ru原子和011μ_B/O原子;Sr原子上的自旋磁矩几乎为零;费米能级处的态密度N(E_F)为435(states/Ryd/f.u.).关于实际的正交结构SRO,计算得出磁矩为108μ关键词： 过渡金属氧化物 电子结构 磁性     

24Mg核11.528MeV能级的验证

本文介绍用γ共振吸收法检验²⁴Mg核11.528MeV能级的实验结果。实验中在此能级的附近能区意外地发现多个精细能级,数据分析给出这些能级的能量E_r和宽度Г_a等数据,同时还获得了与以往数据不同的发射能级宽度Г_e。 关键词：     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

氢在担载金属表面的吸附研究

应用格林函数方法在紧束缚近似下研究了氢在担载金属表面的吸附性质。采用自洽的Anderson-Newns吸附模型,对氢在Pt/ZnO,Cu/ZnO和Ni/ZnO三种担载式复合体系表面的吸附能△E、吸附态能级E_ad作了计算,并讨论了金属簿层在ZnO衬底上的沉积厚度及金属-衬底相互作用对氢在该类复合体系表面的吸附性质的影响。计算表明,金属-衬底相互作用越强,氢在Pt(Cu,Ni)/ZnO体系表面的吸附能及电荷转移量越小。金属-衬底相互作用抑制了氢在金属表面的吸附。衬底对金属表面吸附性质的影 关键词：     

平均键能Em的物理内涵探讨

在面心立方(fcc)、体心立方(bcc)和六角密堆积(hcp)3种不同结构晶体的自由电子能带模型中,发现4个最低能带与5个次低能带本征值的平均能量(称为平均键能,E_m)与费米能级(E_F)相当接近;并进一步在hcp结构的钛(Ti)、锆(Zr)和铪(Hf)以及bcc结构的铁(Fe)等金属中,采用从头赝势能带计算方法和平均键能计算方法,证实在这些金属的实际能带中,平均键能(E_m)值仍然非常接近于费米能级(E_F)值.该发现有助于进一步了解平均键能(E_m)的物理内涵. 关键词： 平均键能 费米能级 能带结构     

助催化剂Co与单晶MoS2边缘面区域及离子溅射解理面相互作用

为了阐明Co原子在钼硫化态催化剂表面上的助催化作用,本文利用UPS,XPS和LEED,研究了Co-Mo催化剂活性相的层状硫化物半导体MoS₂单晶边缘面区域的成分较高的表面以及离子溅射解理面上过渡金属Co的亚原子单层淀积过程。在覆盖度为某个亚原子单层时,表面上存在的与淀积上去的Co有关的界面态,改变了E_F能级的钉扎位置(提高了0.30—0.35eV),使表面势垒下降,表面功函数减小。在E_F附近电子结构的明显变化和LEED研究的结果表明,在MoS₂表面的无序缺陷位置上,可能形成了有利于催化过程的Co-Mo-S类合金键型的活性相。 关键词：     

氧原子在不同过渡金属表面吸附性质的比较研究

采用第一性原理方法对O原子在过渡金属Ir(100)表面吸附能和电子结构随覆盖度变化进行了理论研究,并与类似体系结果进行对比分析.研究结果表明:氧原子在不同过渡金属表面吸附强弱与金属表面d态电子结构密切相关,且在不同过渡金属(111)表面氧原子吸附能与Pt(111)表面的氧原子吸附能拟合结果呈线性关系.     

Zn吸附到含有氧空位(VO)以及羟基(-OH)的锐钛矿相TiO2(101)表面电子结构的第一性原理计算

基于密度泛函理论的第一性原理平面波超软赝势方法, 计算了Zn吸附到TiO₂(101)清洁表面、含有氧空位(V_O)的缺陷表面以及既含有氧空位(V_O)又含有羟基(-OH)表面的能量、Mulliken重叠布居数以及电子结构, 并找到了Zn在每种表面的最稳定结构(分别为模型(c), 模型(aI)以及模型(aII)). 通过对三种表面稳定结构的分析、对比发现: 首先, Zn原子吸附到清洁TiO₂(101)表面上, 主要与表面氧相互作用, 形成Zn–O共价键; 其次, 当Zn原子吸附到缺陷表面时, 吸附能减小到-1.75 eV, 说明Zn更容易吸附到氧空位上(模型(aI)); 最后, 纵观表面模型的能带结构以及态密度图发现, -OH的引入并没有引进新的杂质能级, Zn吸附此表面, 即Zn-TiO₂-V_O-OH, 使得禁带宽度缩短到最小(1.85 eV), 从而有望提高TiO₂的光催化活性. 关键词： 密度泛函理论 氧空位 羟基 Zn原子     

硅中的过渡元素杂质能级

本文提出了半导体中过渡元素杂质的一个简单模型,用格林函数方法计算了硅中替代和间隙原子产生的杂质能级和波函数。发现两者的性质有很大的差别。替代原子只有当d原子能级V_d低于价带顶时才能产生杂质能级。它的波函数主要是悬键态,当能级靠近导带边时变成正键态。间隙原子只有当V_d高于价带顶时才能产生杂质能级。它的波函数主要是中心原子d态,当能级靠近导带边时变成弱反键态。最后定性地说明了过渡元素杂质能级的化学趋势和一些实验事实。 关键词：     

Evolution of the d∥ band across the metal-insulator transition in VO2

We studied the evolution of the electronic structure of VO₂ across the metal-insulator transition. The electronic structure was calculated using the standard TB-LMTO-ASA method. The calculated DOS was compared to previous photoemission and X-ray absorption spectra. The electronic structure is discussed in terms of the usual molecular-orbital scheme. In the metallic phase, the d_∥ band appears at the bottom of the V 3d bands and crosses the Fermi level. In the insulating phase, the d_∥ band is split around 2 eV opening a pseudo band gap at the Fermi level. The largest effect of the splitting appears in the unoccupied part of the d_∥ band. The calculated value of the splitting accounts for 77% of the experimental value, 2.6 eV. The results suggest that electron-lattice interaction seems to be the dominant factor in the splitting of the d_∥ band.     

Embedded cluster calculations for hydrogen chemisorption on the (111) surfaces of fcc Co,Ni, Cu,Rh, Pd and Ag

We present a muffin tin based calculation on (TM)₃H, (TM)₇H and (TM)₁₉H clusters embedded at the surface of an effective jellium-like medium whose potential is treated in scattering length approximation. We consider the changes occurring when the d-like perturbation of the TM muffin tins is switched on. The broad chemisorption-induced resonance seen for H on the effective jellium surface is narrowed and shifted down in energy. Furthermore the occupation of this resonance is increased from about 1.1 electrons to about 1.4 (on 3d metals) or 1.8 (on 4d metals), due to d-like states dropping down from the d band to form a relatively welldefined “bonding state”. An antibonding state containing about 0.4 electrons is formed at the top of the d band. The results are compared with other calculations and with photoemission data. Implications for the metal-hydrogen distance and (for Ni) the demagnetizing effect of hydrogen chemisorption are discussed. We use the change in total single particle energy when the d-like perturbation is switched on to estimate trends in chemisorption energy along the 3d and 4d series. In the 3d case experimental data is available on the difference in chemisorption energy between Ni and Cu which is in reasonable agreement with our estimate.     

Trends in hydrogen chemisorption on transition metals

A systematic study of H adsorption on the close-packed surfaces of the transition metals in the 3d and 4d series is presented. The effect of the TM d band on the chemisorption bond is investigated, by embedding a cluster of TM muffin tins at the surface of an effective jellium-like medium. It is found that the broad and incomplete H/jellium resonance is narrowed, shifted down and made to contain more electrons as a result of hybridization with the TM d states. These effects are larger in the case of the 4d metals, thus indicating a greater participation in the chemisorption bond of the d electrons for these metals than for the 3d metals. Calculation of one-electron energy differences on going from the H on jellium system to that of H on the TM cluster are presented. Trends for the one-electron energy differences are compared to trends in experimental chemisorption energy. H adsorption in the three-fold hollow site with no secondlayer TM atom below the H site is favoured for the hcp metals, while no discernible preference between the two hollow sites is recorded for the fcc metals, with the exception of Rh where the site with no second-layer TM atom below is preferred.     

Trends in the heat of adsorption on transition metal films

An LCAO-MO calculational procedure was used to determine the heat of chemisorption (Q) for an adatom monolayer on a transition metal film. Characteristic parameters of the metal such as Fermi energy (E_F), bandwidth, and position of the d atomic level (ε_d), parameters of the adatom such as energy level (ε_A), and interaction parameters (β) between adatom and metal were varied to determine the dependence of Q on metal position in the periodic table. Adatoms with one valence orbital (for simplicity, of the s type) and with occupation of zero (acceptor), one (radical), or two (donor) were considered. On-top and hole sites each led to similar conclusions. In accordance with model results, Q depends monotonically on $\text{β}\text{(ε}{}_{\mathrm{<mtext>A</mtext>}}\text{?}\text{E}{}_{\mathrm{<mtext>F</mtext>}}\text{)}$. As the d occupation increases within a given transition series, the Q value decreases for the radical and donor cases but increases for the acceptor. These curves are rather flat, in agreement with model results and experimental trends.     

Nd-(Ce)-Cu-O的电子结构和超导电性

本文应用线性化缀加平面波(WLAPW)方法自洽地计算了Nd₂CuO₄的电子结构,由于局域的Nd₄f电子与导带电子的相互作用(杂化),使Cu—O(1)的dp带在高于Fermi能0.18ev处出现了峰值≈4state/eV·cell的态密度(DOS)峰,可能用来说明Nd_2-xCe_xCuO₄随x变化而出现的超导电性转变。 关键词：     

Electronic structure of amorphous Zr based alloys with V,Cr and Mn studied by photoelectron spectroscopy and bandstructure calculations

The electronic structure of the amorphous alloys V₃₆Zr₆₄, Cr₃₀Zr₇₀ and Mn₃₀Zr₇₀ has been studied by photoelectron spectroscopy (UPS, XPS) and bandstructure calculations for the ordered analogs. The valence band photoelectron spectra and the calculated density of states reveal a large contribution to the state density at the Fermi level from the 3d metal. This behavior is characteristic of Zr based alloys with early 3d transition metals and differs from alloys with higher 3d electron numbers in which the 3d band is located at higher energies. The implications of the high density of states at E_F of the amorphous Zr-(V, Cr, Mn) alloys for magnetism and the occurrence of superconductivity is discussed.     

Study of chemisorption on silver surfaces using ultraviolet photoelectron spectroscopy (UPS)

Ultraviolet photoelectron spectroscopy (UPS) was used to study the chemisorption of halogens on stepped [3(111) × (100)] and low-index (111) silver surfaces. The initial rate of halogen adsorption using CHCl₃ exposure on the silver stepped surface is approximately twice that on the low-index surface. This indicates that steps play an important role in chemisorption even on metals with a low density of states at the Fermi level. The adsorbate-induced levels on silver were correlated with halogen p valence orbitals using model extended Hückel calculations. Changes in the silver d band are interpreted as due to p?d orbital interactions.     

The ab initio calculations of the doping Zr's influence on the electronic structure of AlCo2Ti

The electronic structures of the ternary (Hume-Rothery) L2₁-phase compound AlCo₂Ti are calculated by first-principles using full potential linearized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). The ab initio results are analyzed with a simplified model for Al-based compounds containing transition metal (TM) atoms. The results show that the total DOS depends strongly on the positions of TM atoms, and the TM d DOS plays a crucial role in hybridization with other element valence electrons. However, the Al 3s states are repelled far away from the Fermi energy in studied sample, and the Al 3d states are far more extended-like in the character than the d states. Furthermore, the total DOS_s are modulated by Al 3p states and the Al 3p states are more sensitive than d states to change in the electronic interactions. Then, the Al 3p is also important for the ternary stability of the intermetallic compound. The Co-Ti interaction becomes stronger by the doping element Zr in the Al₄Co₈Ti₃Zr structure. Especially, the doping Al₄Co₈Ti₃Zr alloy has a larger value DOS at the Fermi level and makes the total DOS gap smaller than the AlCo₂Ti.     

First-principles study of photoconductivity in BaTiO3 with oxygen vacancies

The photoconductivity of BaTiO_2.5 with oxygen vacancy has been studied by the linear muffin-tin orbital method in the atomic sphere approximation (LMTO-ASA). The ground-state structure of BaTiO_2.5 is obtained by minimization of the total energy. The partial densities of states show that the occupied states at the bottom of the conduction band have primarily Ti d orbital character. The photoconductivity shows that two novel features, in the low energy side, can be attributed to the intraband transition of free electronic carriers in the vicinity of the Fermi level and the interband transition of the Ti 3d(yz) related band states, to the Ti 3d(xy,xz) related band states, respectively. In addition, it is also found that the anisotropy of photoconductivity is enhanced because of the introduction of oxygen vacancy. The system can show the conductive behavior of electronic carriers, which is qualitatively in agreement with a recent experimental finding.     

Local spin density total energy study of surface magnetism: V (100)

Results of self-consistent all-electron local (spin) density functional studies of the electronic and magnetic properties of vanadium (100) 1-, 3-, 5- and 7-layers films are reported using our full-potential linearized augmented plane wave (FLAPW) method. The calculated work function, 4.2 eV, agrees very well with the experimental value of 4.12 eV. From both Stoner factor analyses and spin-polarized total energy calculations, it is concluded that V(100) undergoes a ferromagnetic phase transition only for the monolayer system. The magnetic moment is found to be 3.09μ_B per atom of this monolayer film and to have a total energy 57 mRy below that of the paramagnetic structure. For multilayer V(001) systems, the sharp surface density-of-states peak which is characteristic of the occurrence of surface magnetism in the 3d transition metals is located 0.3 eV above the Fermi level. As a result, the paramagnetic state is stable. In addition, no enhancement of the exchange-correlation integral is found for the surface atoms compared with the bulk value. The lower energy of the paramagnetic structure is further supported by total energy investigations of the multilayer relaxation of V(100) — the calculated interlayer spacings for the paramagnetic surface with a 9% contraction of the topmost interlayer spacing and a 1% expansion of the second interlayer spacing with respect to its bulk value are in good agreement with LEED measurements. It is suggested that the surface magnetism of V(100) may be associated with surface oxygen or caused by impurity induced surface reconstructions.