声子-电子耦合效应对半导体表面感应电势的影响

根据“镜反射”模型，研究快速运动的离子在平行于重掺杂半导体表面飞行时产生的表面感应电势和能量损失，并采用一种局域介电函数，研究声子-电子耦合效应对感应电势和能量损失的影响. 关键词：     

隧道结的发光效应

一、基本原理 根据量子力学原理,如果被真空或绝缘物分开的二电极间间隙足够窄,窄到仅有几个原子直径的距离,这时即使电子没有足够的能量“越过”由这个间隙形成的势垒,由于电子的波动性它们也能经“隧道”穿过势垒.这种现象称作电子隧道效应. 观察电子隧道效应的实验模型是隧道结:一层约20A厚的绝缘物夹在两层金属薄膜之间.当在这两层金属膜之间加上小的偏压 V时,便有电子隧道穿过绝缘层形成隧道电流,此时电子获得能量eV. 隧道电子通过绝缘层有两条通道:弹性通道和非弹性通道.在弹性通道中,电子隧穿获得的能量没有损失;在非弹性通道中,电…     

大能量损失几何条件下剩余电子屏蔽效应的理论研究

通过考虑末通道 中剩余电子的屏蔽效应,用BBK模型及修正方案在大能量损失小动量转移几何条件下对电子电离氦原子的三重微分截面进行了计算,并从物理本质上系统地研究和分析了剩余电子的屏蔽效应在大能量损失几何条件下对三重微分截面所产生的影响.     

大能量损失几何条件下剩余电子屏蔽效应的理论研究

通过考虑末通道 中剩余电子的屏蔽效应,用BBK模型及修正方案在大能量损失小动量转移几何条件下对电子电离氦原子的三重微分截面进行了计算,并从物理本质上系统地研究和分析了剩余电子的屏蔽效应在大能量损失几何条件下对三重微分截面所产生的影响.     

磁台阶势垒结构中二维电子气的自旋极化输运

运用散射矩阵方法,研究了台阶磁势垒量子结构中二维电子气的隧穿输运性质.结果表明：在零偏压下,电子传输概率的自旋极化曲线随入射能量的增加而振荡衰减;随着磁台阶数的增加,电子传输概率的自旋极化度最大值减小,同时电子传输概率的自旋极化度振荡衰减也越来越慢;随着磁台阶的总宽度增加,电子传输概率的自旋极化曲线出现更明显的振荡,电子隧穿磁台阶势垒表现出明显的量子尺寸效应;在偏置电压的作用下,电子传输概率的自旋极化度在宽广的入射能量区出现明显的振荡增大,电子隧穿磁台阶势垒表现出更明显的自旋过滤效应. 关键词： 磁台阶势垒 自旋极化 自旋过滤     

β粒子验证相对论动量-能量关系实验中单能电子阻止本领的研究

本文利用RES-98型相对论效应实验谱仪测定了单能电子在空气中的阻止本领,对单能电子在空气中能量损失规律进行了讨论,分析了β粒子验证相对论动量-能量关系实验中空气对实验结果的影响;实现了在普通实验室进行单能电子阻止本领的测量．     

电子显微学进展及其在材料科学中的应用

文章简要介绍了高分辨电子显微学方法和电子能量损失谱的进展.文中特别指出,随着电子显微技术的发展,原子分辨电子显微图像对结构问题的深入研究有重要作用.装备有能量单色器的新一代电子显微镜,可以直接给出高能量分辨率的电子能量损失谱(优于 0.1eV).这些先进技术方法的应用,推动了晶体结构学、材料科学、物理学、纳米科学及生命科学的发展,也为解决很多重要结构问题奠定了基础.文章重点讨论了几个典型功能材料体系的结构问题:利用大角度会聚束电子衍射技术,分析了应变硅器件中的应变分布;利用原位电子显微技术,研究了新型电子铁电体LuFe2O4电荷序和物理性能的关系;深入探讨了强关联体系中电子关联效应对电子能量损失谱和电子结构的影响.     

低速分子离子在固体电子气中的散射与能量损失

利用量子力学中的电子分子散射理论，研究了低速双原子分子离子在固体电子气中的散射与能量损失，重点讨论了两离子之间的干扰效应对能量损失的影响。根据原子的ｉｎｄｅｐｅｎｄａｎｔ ｐａｒｔｉｃｌｅ－ｍｏｄｅｌ（ＩＰＭ）势和变相法，确定了单原子离子的散射相移和阻止本领，并与非线性密度泛函理论的结果进行了比较。 关键词：     

电子能量损失谱学及其在材料科学中的应用

讨论了电子能量损失谱学及其在材料科学中的应用，主要内容包括：能量分析和选择系统，低能损失谱学，内层损失谱学，能量选择成像以及电子能量损失谱的精细结构的分析。     

高能离子与固体相互作用引起的一些实验现象

高能(MeVlamu)离子在固体中的能量损失主要用于激发电子。本文结合三类实验现象(固体径迹形成,高能离子溅射和薄膜基体粘着力增强效应),讨论这部分电子激发能在绝缘介质中如何转移为原子运动能量的模型机制以及有关问题。     

Resonant tunneling transport through GaAs/AlGaAs superlattices in strong tilted magnetic field

An analysis is presented of the transverse resonant tunneling transport through GaAs/AlGaAs superlattices due to tunneling between Landau levels in quantum wells in a strong tilted magnetic field. A high tunneling rate is demonstrated between Landau levels with Δn ≠ 0 in a magnetic field with a nonzero in-plane component. This leads to substantial broadening and shift of the tunneling resonance and significant changes in the current-voltage characteristics of superlattices. The predicted behavior of the current-voltage characteristics of superlattices in tilted magnetic fields is demonstrated experimentally.     

Observation of sequential excited-to-excited states resonant tunneling in weakly coupled superlattices with wide quantum wells

The sequential excited-to-excited state resonant tunneling effect was observed in weakly coupled long-period superlattices resulting in additional negative differential conductivity resonances in multistable current–voltage characteristics. The results obtained show the evidence of the highly nonequilibrium distribution of carriers over subbands with energies below the optical phonon energy in superlattices. A new type of electric field domains, due to resonant tunneling between excited subbands in adjacent wells, is considered, and experimental evidencies of such a domain's existence are given.     

Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices

The phonon-plasmon interaction in tunneling GaAs _n /AlAs _m superlattices (m=5and 6≥n≥0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers.     

Recent results on superlattice transport and optoelectronics applications

Recent results involving miniband transport in superlattices at millimetre (mm) wave frequencies are reviewed. The miniband negative differential conductance up to very high frequencies allows for a new kind of device, the superlattice photo-oscillator. A practical application for optical to mm-wave conversion is demonstrated. An analysis of the intrinsic limitations in the transport processes led to recent progress in the understanding of superlattices physics involving Zener inter-miniband tunneling.     

Interband tunneling and wannier—stark states in superlattices with complex primitive cell

Interband electron tunneling and Wannier-Stark st ates in superlattices with a complex primitive cell were investigated. The method developed in this study allows an arbitrary number of minibands to be considered.     

Resonant tunneling of ultracold atoms through vacuum induced potentials

We demonstrate resonant tunneling of ultracold atoms through potentials produced by the interaction of atoms with the vacuum field of a system of cavities. We show the close connection of the transmission characteristics to the resonant states in vacuum induced potentials. Transmission of cold atoms, though sharing some features with tunneling in finite semiconductor superlattices, is strongly dependent on the coherent addition of amplitudes from various wells and barriers.     

Multi-affine analysis of typical currency exchange rates

The resonance splitting in finite semiconductor superlattices which consist of a number of electric barriers is investigated. It is found that (n-1)-fold splitting for n-barrier tunneling obtained in periodic superlattices of identical barriers no longer holds for superlattices which are periodically juxtaposed with two different building barriers. In general, one resonant domain in the former splits into two resonant subdomains in the latter, and splitting occurs each time when two new barriers are added. The results indicate that the resonance splitting is determined not only by the structure but also by the parameters of building blocks. Received: 12 October 1997/ Revised and Accepted: 5 January 1998     

Resonant tunneling in GaAs/AlxGa1−xAs superlattices with aperiodic potential profiles

Using the exact Airy function formalism and the transfer-matrix technique, we have numerically investigated in this paper the effect of intentional correlations in spatial disorder on transmission properties of one-dimensional superlattices. Such systems consist of two different structures randomly distributed along the growth direction, with the additional constraint that barriers (wells) of one kind always appear in triply. It is shown that the intentional correlations in disorder and superlattices structural parameters are responsible to obtain resonant tunneling in aperiodic structure.     

A microscopic model of sequential resonant tunneling transport through weakly coupled superlattices

A microscopic model is developed for resonant tunneling transport in weakly coupled semiconductor superlattices in a constant external electric field. The model takes into account multiple subbands and electric-field dependence of scattering by acoustic and optical phonons, charged impurities, and interface roughness. The model is used as a basis for computing the resonant-tunneling profiles for structures with small size-quantization energies. The computed results are in good agreement with experiment. In structures of this type, an important role is played by electric-field dependence of scattering processes and the threshold behavior of elastic processes is strongly manifested. A substantial asymmetry is predicted not only for the first tunneling resonance, but also for higher order resonant tunneling processes.