氢化非晶碳薄膜的光致发光线型及其激发能量依赖关系

本文报道了氢化非晶碳薄膜在2.9-4.5eV光激发下的发光谱。它的光致发光谱是无结构的不对称宽带,半宽度约为0.8eV。在低于3.56eV的光激发下,谱带的峰值能量随激发能量的降低明显红移。在安德森带结构和指数分布的带尾态密度的基础上,考虑了尾态中粒子的两种跃迁过程,实验的PL谱就可得到解释。并用这个简单模型计算了这种材料的光致发光谱特征。     

a-C:H薄膜的光致发光

利用射频辉光放电法沉积a-C:H薄膜,研究不同测量温度、不同退火温度光致发光光谱的变化,以及光致发光光谱随光子能量的变化,实验表明:随着测量温度的升高发光效率降低,用非晶碳网络的二相系统模型对这些结果作了解释。另外,光致发光光谱也随着激发光能量的不同而变化,当激发光能量接近光学带隙E_opt时,发光强度最高。 关键词：     

键合氢对GDa—Si:H薄膜光致发光性质的影响

测量了在不同衬底温度下制备的GDa-Si:H膜的光致发光谱和光吸收谱。实验发现键合氢含量的增加导致光致发光峰强度、发光峰能量、发光带半宽度、Stokes位移和热淬灭的增大。由此导出:(1)键合氢不仅能消除无辐射复合中心,而且能产生辐射复合中心;(2)随着键合氢含量的增加电子-声子相互作用增强,带尾宽度缓慢变窄。 关键词：     

MOCVD法生长Ca_(0.5)In_(0.5)P外延层的近红外光致发光与温度的依赖关系

测量了用金属有机物化学气相沉积(MOCVD)方法在GaAs衬底上生长的Ga_(0.5)In_(0.5)P外延层的近红外光致发光光谱,观察到三个与深能级有关的发光带,其峰值能量分别为1.17,0.99和0.85eV.研究了这些发光带的发光强度,峰值位置和半宽度随温度的变化关系,并初步分析其来源.     

非晶氧化硅薄膜带尾发光特性

采用等离子体增强化学气相沉积技术,通过改变CO2流量制备了不同氧含量的非晶氧化硅薄膜。利用紫外可见吸收谱、傅里叶红外吸收谱和稳态/瞬态光致发光谱等技术研究了薄膜的微观结构和光学特性。实验结果表明,随着氧含量的增加,薄膜的带隙增大,光致发光强度增加、峰值朝高能方向移动、光谱半峰全宽展宽。时间分辨光谱显示薄膜发光峰值处的衰减时间随氧含量的增加从6.2ns单调增加到21ns,而同一样品的发光寿命随发射波长能量增加而减小。综合分析光学吸收、发射及发光衰减特性表明,薄膜的发光机制主要归结为非晶材料带尾态之间的辐射复合。     

C+注入a-SiNx：H薄膜的微结构及光发射的研究

常温下对低压化学气相沉积制备的纳米硅镶嵌结构的a-SiN_x:H薄膜进行低能量高剂量的C⁺注入后,在800~1200℃高温进行常规退火处理。X射线光电子能谱(XPS)及X射线光电子衍射(XRD)等实验结果表明,当退火温度由800℃升高到1200℃后,薄膜部分结构由SiC_xN_y转变成SiN_x和SiC的混合结构。低温下利用真空紫外光激发,获得分别来自于SiN_x、SiC_xN_y、SiC的,位于2.95,2.58,2.29 eV的光致发光光谱。随着退火温度的升高,薄膜的结构发生了变化,发光光谱也有相应的改变。     

Bi3.15Eu0.85Ti3O12铁电薄膜的结构与光学性能

采用化学溶液沉积法在石英衬底上制备了Bi_3.15Eu_0.85Ti₃O₁₂ (BEuT) 铁电薄膜,研究了 BEuT薄膜的结构和光学性能。XRD结果表明,不同温度退火的BEuT皆形成铋层状钙钛矿型结构,其晶粒尺寸随着退火温度的升高而增大,与SEM观察结果一致。对BEuT薄膜的拉曼光谱研究表明,Eu³⁺主要取代钙钛矿层中的Bi³⁺位。光学透过率曲线显示,在大于500 nm的波段,各BEuT薄膜的透过率均比较高,其禁带宽度约为 3.69 eV。BEuT薄膜的发光随着退火温度的升高而增强,这可归因于其结晶状况的改善。     

玻璃中CdSeS纳米晶体的室温光致发光谱

对掺有过饱和的镉、硒和少量硫的玻璃在500～800℃分别退火4h,生长了不同尺寸的CdSe_1-xS_x纳米晶体。测量了纳米晶体的室温吸收光谱和光致发光(PL)光谱,550℃生长的样品在300～800nm的范围没有观察到吸收和发光峰,表明温度低于550℃玻璃中不能形成纳米晶体。生长温度在600～650℃,纳米晶体的PL光谱主要为两个宽的发光带,即带边激子发光带和通过表面态复合的发光带。随着生长温度的升高,带边复合发光的蓝移减小,通过表面态的发光逐渐消失,并出现了叠加于宽发光带上的一系列明显的弱发射峰。不同温度生长的样品中,叠加峰的能量相同。同一样品中叠加峰的能量不随激发光波长的变化而变化。     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

中子辐照高掺硅砷化镓的光致发光研究

研究了高掺硅的n型GaAs在中子辐照前后和150℃-500℃等时热退火以后的光致发光光谱。观察到在中子辐照后积分发光强度降低为辐照前的1/36。在退火温度超过250℃时,积分发光强度显著增长,当退火温度达400℃以上时,在带边峰的低能侧出现能量为1.35eV、1.30eV和1.26eV的发光峰。假设250℃退火阶段对应于较大的空位团分解为较小的空位团,400℃退火阶段对应于较小的空位团分解出VGa,可以较好地解释实验现象。     

掺铒SiOx的光致发光特性

利用分子束外延设备生长了掺铒SiO_x,观察到铒掺入的同时O的掺入效率也得到提高.铒可以促进氧的掺入的原因是铒与氧在硅衬底表面反应，以络合物形式掺入硅中，从而提高了硅中氧的浓度.测量了铒在SiO_x中的光致发光特性，结果表明掺铒的SiO_x的发光强度从18K到300K仅下降了约1/2，这说明Er掺在SiO_x中是一种降低发光强度的温度淬灭效应的途径，最后讨论了温度淬灭的机制. 关键词：     

Study on morphology and photoluminescence of Au/SiO2 nanocomposite films

Au/SiO₂ nanocomposite films were fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering technique and annealing at different temperature for 20 min (mode A) and at 1000 °C for different annealing time (mode B). The nanocomposite films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL). SEM results demonstrate that the size of Au crystallites in mode A first increases and then decreases, on increasing annealing temperature, according to the results of XRD spectra. Analysis of PL spectra in mode B shows that the intensity of the emission peak at 440 nm and 523 nm early increases and late decreases, with increasing annealing time at 1000 °C. The origin of the emission peak at around 440 nm was related to the size and quantity of Au particles and one of the emission peak at around 523 nm was related to the nanostructure of films in agreement with SEM imagines. Experimental results indicated that morphology, microstructure and luminescence of Au/SiO₂ nanocomposite films showed close affinity with annealing temperature and annealing time.     

The influence of nickel dopant on the microstructure and optical properties of SnO2 nano-powders

The microstructure and optical properties of Ni-doped SnO2 nano-powders are studied in detail. By Ni-doping, not only the grain size reduces, but also the grain shape changes from nano-rods to spherical particles. The crystallization becomes better with annealing temperature increasing. The band gap energy decreases as nickel doping level increases. The sp-d hybridization and alloying effect due to amorphous SnO2-x phase should be responsible for the band gap narrowing effect. Nickel dopant does not change the photoluminescence （PL） peak positions.     

Excitation process and photoluminescence properties of Tb and Eu ions in SnO2 and in SnO2: Porous silicon hosts

Tin oxide (SnO₂)-layers-doped terbium and europium ions are elaborated by the sol-gel method on silicon substrates. After annealing at 500 °C, the transmission electron microscopy revealed a crystallization of tin oxide.The emission properties of rare-earth in SnO₂ are studied systematically against temperature annealing and Tb³⁺ concentration. The PL spectrum is optimal after annealing at 900 °C and the corresponding photoluminescence (PL) decay is nearly exponential, showing that the sample is homogenous and the PL process can be described by two levels system.The concentration effect shows a quenching of the PL intensity for Tb³⁺ concentration above 4%. From the investigation of the decay rate from the ⁷F₅ state within terbium concentration, we show that self-quenching is insured by dipole - dipole interaction. The evolutions of both PL intensity and PL lifetime versus temperature are studied. The PL intensity and PL lifetime are enhanced by deposing SnO₂:Tb³⁺ and SnO₂:Eu³⁺ in porous silicon. We show that an efficient excitation transfer from Si nanocrystallites to RE ions can occur.     

Influence of annealing temperature on structural, optical and magnetic properties of Zn0.95Cu0.02Cr0.03O powders

Zn_0.95Cu_0.02Cr_0.03O powders have been synthesized by the sol-gel method and sintered in argon atmosphere under different temperatures. The structural, optical and magnetic properties of the powders were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and vibrating sample magnetometer (VSM). The XRD results demonstrated that Cr and Cu ions are incorporated into ZnO successfully when annealing temperatures were 600 and 700 °C. But when the samples were annealed at 500 °C, the crystallinity of the samples was not very good. However, when the annealing temperature was increased to 800 °C, the secondary phase of Cu and ZnCr₂O₄ appeared in the samples. The PL spectra revealed that the position of the ultraviolet (UV) emission peak of the samples showed a blue shift and the green emission peak enhanced significantly with the annealing temperature increasing from 600 to 700 °C. Magnetic measurements indicated that the room temperature ferromagnetism of Zn_0.95Cu_0.02Cr_0.03O was intrinsic in nature. In addition, the saturation magnetization (Ms) increased from 0.0078 to 0.0088 emu/g with the annealing temperature increased from 600 to 700 °C.     

退火温度对Er/Yb共掺Al2O3薄膜的光致荧光光谱的影响

通过对不同退火条件下Er/Yb共掺Al_２O_３薄膜光致荧光(PL)光谱的 系统分析，研究了高Er/Yb掺杂浓度所导致的晶体场变化对薄膜PL光谱的影响，并结合薄膜结构分析，探讨了Al_２O_３薄膜的结晶状态在Er^３＋激活、PL光谱宽化 中的作用及可能的物理机理.研 究结果表明：退火处理所导致的Er^３＋ PL光谱的变化与薄膜的微观状态之 间有着密 切的联系.在600—750℃范围内，薄膜呈非晶态结构，薄膜荧光强度的增加主要是薄膜内缺 陷减少所致；在800—900℃范围内，γ-Al_２O_３相的出现是导致荧 光强度明显增加的主 要原因；当退火温度为1000℃时，Er，Yb的大量析出致使荧光强度的急剧下降.此外，对PL 光谱线形分析表明，各子能级跃迁的相对强度变化是导致荧光光谱宽化的主要因素. 关键词： Er/Yb共掺 ２O_３薄膜')" href="#">Al_２O_３薄膜 光致荧光     

Sb/As intermixing in self-assembled GaSb/GaAs type II quantum dot systems and control of their photoluminescence spectra

The intermixing of Sb and As atoms induced by rapid thermal annealing (RTA) was investigated for type II GaSb/GaAs self-assembled quantum dots (QD) formed by molecular beam epitaxy growth. Just as in InAs/GaAs QD systems, the intermixing induces a remarkable blueshift of the photoluminescence (PL) peak of QDs and reduces the inhomogeneous broadening of PL peaks for both QD ensemble and wetting layer (WL) as consequences of the weakening of quantum confinement. Contrary to InAs/GaAs QDs systems, however, the intermixing has led to a pronounced exponential increase in PL intensity for GaSb QDs with annealing temperature up to 875 °C. By analyzing the temperature dependence of PL for QDs annealed at 700, 750 and 800 °C, activation energies of PL quenching from QDs at high temperatures are 176.4, 146 and 73.9 meV. The decrease of QD activation energy with annealing temperatures indicates the reduction of hole localization energy in type II QDs due to the Sb/As intermixing. The activation energy for the WL PL was found to drastically decrease when annealed at 800 °C where the QD PL intensity surpassed WL.     

Annealing effect on the optical properties in Si delta-doped Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures

The optical properties of Si delta-doped Al_0.24Ga_0.76As/In_0.15Ga_0.85As/GaAs pseudomorphic high electron mobility transistor structure (PHEMTs) are estimated after the process of rapid thermal annealing (RTA) in the temperature range 500–750°C. After layer intermixing and decrease of 2DEG densities of PHEMTs just occurs around the annealing temperature of 650°C, the 12H transition peak at 1.354 eV above the annealing temperature of 650°C is newly observed from the photoluminescence (PL) and photoreflectance (PR) spectra. From the results of PL and PR measurements in the annealed PHEMTs, it is found that remarkable modification of band profile in InGaAs QW occur at annealing temperature above 650°C.     

Generation of optically active states in a-SiNx by thermal treatment

Amorphous silicon nitride (a-SiN_x) films were deposited using plasma-enhanced chemical-vapor deposition (PECVD) and subsequently, thermal annealing processes were performed at 700-1000 °C in the ultra-high vacuum (UHV) condition. A strong photoluminescence (PL) peak induced by luminescent defect centers was observed at 710 nm for the as-deposited sample. When the sample was annealed at 700-1000 °C, the PL peak intensity became about 3-12 times stronger with no shift of the PL peak. To investigate the origin of the change in PL peak intensity after the thermal annealing, Si 2p and N 1s core-level spectra were systematically analyzed by high-resolution photoemission spectroscopy (HRPES) using synchrotron radiation. In particular, N 1s spectra were decomposed with three characteristic nitrogen-bonding states. It is revealed that the nitrogen bonding state with N-Si and NSi₂ configurations (denoted as N3) contributes mainly to the change in PL peak intensity. We note that luminescent nitrogen related defect centers such as N₄⁺ and N₂° are localized in the state N3. Detailed analysis of the experimental results shows that the state N3 is located in the interface bounded by the region of the nano-sized stoichiometric silicon nitride Si₃N₄ (denoted as N1) and is considerably influenced by the thermal annealing, which is an appropriate process to cause strong photoluminescence of the related samples as mentioned above.