低温凝聚InSb膜相变过程中的时间效应和超导电性

本文研究了低温凝聚InSb膜相变过程中出现的时间效应和超导电性,获得了几个重要结果:(a)低温凝聚InSb膜从发生第一次电导跃变以后到第二次电导跃变之前,样品处于同一非晶金属态,并且具有相同的超导转变温度T_c;(b)T_c和退火温度T_a的关系十分类似于电导随T_a的变化关系;(c)随着第二次电导峰值后的电导下降,在某些特殊的相变区R(T)超导转变中,样品由完全的超导电性逐渐过渡到部分的超导电性;(d)相变过程中存在显著的时 关键词：     

Ar离子注入YBa2Cu3O7-x超导薄膜中微结构变化的透射电子显微镜研究

Ar离子注入YBa₂Cu₃O_7-x超导薄膜后,不仅会引起样品超导转变温度T_c和临界电流密度J_c的下降,还会使样品的正常态由金属型变为半导体型。透射电子显微镜观察发现在小剂量(<5×10¹²Ar/cm²)注入情况下,样品的晶格结构几乎不受影响。随着注入剂量的增加,晶格损伤越来越严重,最终变成非晶态。对实验结果的分析表明,Ar离子注入引起YBa_{2< 关键词：}     

硫酸锂钾的室温相和低温相的锂离子位置

核磁共振实验表明,LiKSO₄在T_c=195K发生结构相变。本文报道了温度低于T_c时,Li位电场梯度张量的温度依赖关系。结合理想离子晶体模型,讨论了该晶体的结构,指出室温相Li的位置并不像Bradley所推测的,在(2/3,1/3,0.849)的位置,而应在(2/3,1/3,0.706)的位置;195K的相变是由于Li离子的位移造成;低温相的空间群可能为R3。 关键词：     

LaAlO3晶体中相变与缺陷研究

从室温到800℃范围内用锥光干涉图实时观察LaAlO₃晶体中的相变,发现在560℃存在由三角相转变为立方相的相变,并由X射线衍射法得到证实,同时对孪晶的形态,畴区的结晶学取向规律,孪晶的密集度以及畴和包裹体的双折射像在T_c附近的变化规律进行了系统的研究。 关键词：     

低温凝聚InSb膜相变过程中的结构及其超导电性

本文研究了低温凝聚LnSb膜相变过程中的结构变化及其对超导电性的影响,由X射线衍射分析发现一系列新结果,从而解释了低温凝聚InSb膜相变过程中的电导及相应的T_c本文指出对应于第二电导峰值的T_c是六方晶系(InSb)H的层状导电机制所致。 关键词：     

高温超导薄膜中的涨落超导电性及其维度

对RBa₂Cu₃O_7-δ(R=Y,Gd)超导薄膜电阻温度关系的仔细测量,观察到在T_c附近有相当强的超导涨落现象,研究发现,多晶和外延的YBa₂Cu₃O_7-δ薄膜在T_c以上均呈现出2D涨落超导电性;而当温度趋向于T_c时,有—2D向3D的转变发生,这与Lawrence-Doniach理论很好地相符,实验中还发现,一 关键词：     

Lu2Ti2O7和Lu2TiO5陶瓷材料的Kr离子辐照损伤研究

钛酸盐因其优异的物理化学性能,可作为高放射性核废物（HLW）和锕系元素（钚）的重要候选固化材料之一。采用传统的陶瓷烧结工艺制备了多晶的Lu₂Ti₂O₇和Lu₂TiO₅陶瓷材料。在室温下,用800 keVKr2+对两种材料进行辐照,辐照后的样品采用GIXRD进行表征,观察到两种样品都经历了先肿胀、然后再发生非晶相变的过程。不同的是Lu₂Ti₂O₇的晶格肿胀程度大于Lu₂TiO₅。另外,Lu₂TiO₅样品的辐照到2×10₁₄ ions/cm₂时非晶含量达95.54%,而Lu₂Ti₂O₇样品在此剂量下非晶含量只有74.66%。通过第一性原理计算了Lu₂Ti₂O₇晶体的晶格肿胀随反位浓度的变化关系,结果表明,Lu₂Ti₂O₇出现非晶前的晶格肿胀主要由阳离子反位导致,而Lu₂TiO₅是无序的萤石结构,其辐照所导致的晶格肿胀不含阳离子反位的贡献,晶格肿胀程度较低。     

Bl结构MoNx薄膜的制备及物理性能研究

我们对以反应性溅射法制备的MoN_x薄膜测量了超导转变温度T_c,电阻率ρ(T)(从T_c起始到300K)。用X射线衍射技术、卢瑟福背散射(RBS)、俄歇谱仪和X射线光电子能谱(XPS)技术对这些样品进行了分析。实验结果表明T_c和ρ(T)随N含量改变而变化。当样品是B1结构时,T_c小于4.2K,而且样品内还有过量的N存在。俄歇分析表明,样品内有O,C杂质存在。这些因素都可能导致T_c很低,ρ(T)呈负的温度系数。 关键词：     

LiKSO4的旋光性和相变

室温下测量了LiKSO₄单晶的旋光频散特性,用“晶体”旋光模型可以很好地拟合实验结果。在-180℃到680℃温度范围内,测量了LiKSO₄的旋光度,观测到四个相交:低温相变具有显著的温度迴线,相变温度随样品而异。讨论了上述相变模式与目前已报道的LiKSO₄相变资料之间的关系。 关键词：     

Si-Al2O3复合薄膜的室温铁磁性

在Si-Al₂O₃复合薄膜中观察到室温铁磁性.Si的体积百分比为15 %的Si-Al₂O₃复合薄膜的磁性最强.Si的含量影响样品的磁有序,在样品中观察到了明显的磁畴.在不同气氛下,对样品进行快速热退火.退火样品的磁性测试结果的差别表明氧空位不是样品铁磁性的主要来源.我们认为铁磁性来源于Si与Al₂O₃基质界面之间的缺陷的磁耦合.改变Si的含量可以改变缺陷密度,从而控制铁磁耦合强度. 关键词： 2O₃薄膜')" href="#">Al₂O₃薄膜 室温铁磁性 掺杂 交换相互作用     

含Sb的Bi系超导体的研究

Bi-Sr-Ca-Cu-O系中掺入适量的Sb,其高温相(110K相)含量明显多于不掺Sb样品。Sb具有加速高温相形成的作用。对于各义组分为Bi_2-xSb_xSr₂Ca_2.5Cu_3.7O_y的样品,x=0.1最有利于高温相的形成。用液氮中淬火后低温回火的方法,发现在865℃烧结时样品中首先形成的是低温相(80K相),然后再逐渐转变为高温相。T_c值随烧结时间的延 关键词：     

Superconductivity and electrical resistivity of amorphous Nb75Ge25 and Nb80Si20 after heavy ion irradiation at low temperature

Low temperature irradiation of thin films of Nb₇₅Ge₂₅ (T_c = 3.2 K) and Nb₈₀Si₂₀ (T_c = 4.7 K) with 20 MeV sulfur ions leads to an increase of T_c of about 0.5 K and a decrease of ? of about 1.5 to 3.5%. Annealing up to room temperature partly restores the initial values. Qualitatively the results can be explained by irradiation induced smearing of the structure factor, which is partially recovered by annealing.     

Superconductivity of niobium nitride single crystals after implantation of carbon and nitrogen

Single crystals of δ-NbN_0.85 with a superconducting transition temperature T_c of 14.3 K were implanted with nitrogen and carbon ions at room temperature and subsequently annealed at high temperatures. Implantation was also performed at high substrate temperatures. After implantation at about 920°C maximum T_c-values of 16.5 and 17.8 K were obtained with N- and C-ions respectively. Disorder observed after room temperature implantation consisted of displaced Nb-atoms which could not be completely annealed in an isochromous annealing process up to 1000°C. For annealing temperatures above 1100°C nitrogen diffusion out of the implanted layers resulted in a reduction of T_c.     

高温电子辐照硅中缺陷的研究

本文对高温电子辐照硅中产生的缺陷进行了研究,发现缺陷的引进率随电子辐照温度的增加而增加,在达到极值温度T_m后,缺陷的引进率将随之而下降,T_m值与缺陷的退火激活能有关。E₃缺陷(E_c—0.36eV)浓度在高温电子辐照中显著增加,在330℃高温电子辐照时,E₃缺陷浓度为室温电子辐照的6倍。研究结果表明,E₃缺陷的可能结构为与多空位和氧有关的复合体。 关键词：     

Effect of annealing temperature on some physical properties of MgB2 by using the Hall probe ac-susceptibility method

A commercially available powder of MgB₂ is used as starting material for the examination of the influence of the annealing temperature on the properties of this intermediate-T_c superconductor. We performed scanning electron microscopy (SEM) and Hall ac-susceptibility measurements as a function of temperature and ac-field amplitude on samples annealed at 650, 750, 850 and 950 °C. The imaginary part of ac-susceptibility measurements is used to calculate both the inter-granular critical current density, J_c(T_p) and density of pinning force, α_j(0). It was observed that all T_c, J_c(T_p) and α_j(0) exhibit a non-monotonic behavior on the annealing temperature range studied in this work. T_c is measured to be 39.85±0.02 K and J_c(T_p) is estimated to be as high as 60 A/cm² at 39.2 K for the sample annealed at 850 °C. The peak temperature, T_p, in the imaginary part of the ac-susceptibility curves shifts to lower temperatures with both decreasing the annealing temperature and increasing the amplitude of the ac-magnetic fields. A comparison of the experimental ac-susceptibility data with theoretical critical-state models that are currently available is performed. SEM investigations showed that the grain size increases, and the grain connectivity improves when the annealing temperature increases up to 850 °C. The possible reasons for the observed changes in transport, microstructure and magnetic properties due to annealing temperature are discussed.     

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

Magnesium diboride (MgB₂) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB₂ thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature (T_c), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest T_c of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate (T_s) increased, T_c rose. However, the maximum T_s was limited due to the low magnesium sticking coefficient and thus the T_c value was limited as well. The highest T_c, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low T_c, did not have the well-developed MgB₂ grains while the films with higher T_c displayed the well-developed grains and smooth surface. Although the T_c of sputtered MgB₂ films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB₂ heterostructures using rather simple physical vapor deposition method such as sputtering.     

Oxygen content dependence of the EPR line shape in GdBa2Cu3O7−y single crystal

X-band electron paramagnetic resonance (EPR) spectra of a GdBa₂Cu₃O_7−y single crystal were obtained at room temperature before and after reducing its oxygen content by, annealing. Before annealing, the sample exhibited superconductivity atT _c≊90 K; the EPR line was asymmetrical and was described with a Dysonian shape because of the skin effect. After annealing, superconductivity was not observed; the EPR line, less affected by the skin effect, was symmetrical and more intense, approximately described with a Lorentzian shape.     

Effects of neutron irradiation on superconducting properties of orthorhombic Y–Ba–Cu oxides

Abstract

We have studied the effects of fast neutron (E>0.1 MeV) irradiation at reactor (～ 360 K) and low (～ 20 K) temperatures on the superconducting properties of polycrystalline orthorhombic YBa₂Cu₃O_7?y . Measurements were made on the superconducting critical temperature T_c , critical current J_c , Meissner effect and magnetic field dependence of J_c . The T_c drops by an irradiation at reactor temperature and J_c increases with increasing fluence. On the other hand with the irradiation at low temperature, T_c rises and J_c increases. Results of observation of Meissner effect and the magnetic field dependence of J_c are consistent with the behavior of T_c and J_c .     

Effects of low temperature irradiation with heavy ions on superconductor niobium

To study the effects of heavy ion irradiation at low temperature on type II superconductor Nb, the transition temperatureT _c , the normal state residual resistivityρ _B , the transition widthΔT _ph using oxygen ions of 25 MeV and subsequent thermal annealing were measured. The samples were held at temperatures <20 K during irradiation in a cryostat for in situ measurements. The maximum oxygen fluence was about 2·10¹⁵ cm^?2 corresponding a relatively high defect concentration. The heavy ion irradiation experiments are described. The critical temperatureT _c decreases with increasing residual resistivityρ _B . In agreement with the theory and experiments, the gap anisotropy parameter is 〈a ²〉=0.008, subsequent annealing shows a hysteresis ofT _c versusρ _B . The resistivity saturation value Δρ_BS = 2.55 μΩ cm was obtained and different recovery stages were found. Significant broadening of transition width during irradiation was observed.T _c andΔT _ph anneal to 60% in the temperature interval of (60–90) K. Oxygen induced effects as a simulation method of high neutron damage are compared with irradiation measurements using neutrons and deuterons.     

Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

This paper reports that Zn_0.97Mn_0.03O thin films have been prepared by radio-frequency sputtering technology followed by rapid thermal processing in nitrogen and oxygen ambient respectively. Magnetic property investigation indicates that the films are ferromagnetic and that the Curie temperature (T_c) is over room temperature. It is observed that the saturation magnetization of the films increases after annealing in nitrogen ambience but decreases after annealing in oxygen. Room temperature photoluminescence spectra indicate that the amount of defects in the films differs after annealing in the different ambiences. This suggests that the ferromagnetism in Zn_0.97Mn_0.03O films is strongly related to the defects in the films.