表面修饰的钛酸钡的拉曼光谱

采用水热法制得表面包裹有十二烷基苯磺酸(DBS)和硬脂酸(St)的BaTiO₃纳米粒子，平均粒径均为60nm左右.拉曼光谱检测结果表明，样品的确为表面包裹有表面活性剂(DBS或St)的BaTiO₃纳米粒子集合体.与未包裹的相比，各光学声子模对应的拉曼振动模式峰均发生了蓝移.还发现不同的包裹体，所导致的蓝移值也不同.从纳米粒子的表面结构及包裹层的压力出发对此现象进行了定性解释和讨论. 关键词： 拉曼光谱 3纳米粒子')" href="#">DBS/ BaTiO₃纳米粒子 蓝移     

光折变晶体Ce:BaTiO3电光和压电系数的测量

用干涉仪的方法测量了Ce:BaTiO₃晶体的低频电光系数和压电系数．排除压电效应对光通过晶体引起相位的变化，得到低频下经极化的Ce:BaTiO₃单晶的电光系数r₄₂=1945±220pm/V和r₁₃=11.8±1pm/V．从而，为研究Ce:BaTiO₃晶体的光折变效应和理论计算提供了精确的线性电光系数 关键词：     

四方相BaTiO3结构的中子衍射

在13.6℃用中子四圆衍射仪收集了BaTiO₃单晶的衍射数据55个。利用最小二乘法对四方相BaTiO₃(p4mm)的结构作了进一步的研究,R因子达到1.86%。结果表明,b位附近的O原子是无序的。 关键词：     

金属纳米团簇复合薄膜Au/BaTiO3与Fe/BaTiO3的PLD制备及其光吸收特征

用脉冲激光沉积技术制备了掺杂纳米金属颗粒Au或Fe的BaTiO₃复合薄膜.用透射电子显微镜和x射线光电子能谱表征了金属颗粒的形态和化学态.330—800nm范围的吸收谱研究表明，掺Au颗粒的BaTiO₃薄膜在580nm附近有一个明显的共振吸收峰，而掺Fe颗粒的BaTiO₃薄膜没有这样的吸收峰.用Mie散射理论对结果进行了分析. 关键词： 复合薄膜 金属颗粒 脉冲激光沉积 吸收谱     

BaTiO3/p-Si异质结的整流特性和光诱导特性的研究

利用脉冲激光沉积法成功制备了BaTiO₃/p-Si异质结, 该异质结在80–300 K 显示出了良好的整流特性和光诱导特性. 开启电压随着温度的升高而逐渐降低. 利用不同频率的光子辐照样品, 观察到明显的光电导效应. 且随着照射光子能量的增大, 结电流也相应变大, 光诱导效应越明显. BaTiO₃薄膜电阻-温度(R-T) 曲线显示氧缺陷条件下BaTiO₃薄膜具有良好的半导体特性. 关键词： 异质结 光诱导效应 3薄膜')" href="#">BaTiO₃薄膜     

掺铑BaTiO3单晶场致应变特性的研究

系统地研究了掺铑的BaTiO₃单晶在老化后的场致应变性能.研究发现，晶体的场 致应变随老化时间的增加而增大，在老化27天后，在300V/mm的电场下，其双向场致应变可达1.11％；在较小的测试频率下（0.01Hz）也可得到0.95％的可逆的巨大的单向场致应变，在低频范围内，晶体的单向场致应变随测试频率增大而减小；研究晶体老化后的电滞回线，发现其 形状类似于蜂腰磁滞回线.实验结果表明，对BaTiO₃单晶掺杂铑元素可以大大改 善其电致伸缩性能，可能产生新的在超大应变及非线性驱动器中的应用. 关键词： 3单晶')" href="#">BaTiO₃单晶 掺铑 场致应变 老化     

激光分子束外延BaTiO3薄膜最顶层表面原子平面与薄膜生长机理

用激光分子束外延技术在SrTiO₃(001)衬底上外延生长了高质量的BaTiO_{3< /sub>薄膜,薄膜的生长过程由反射式高能电子衍射仪(RHEED)原位实时监测,表明薄膜具有 二维层状生长模式.薄膜的晶体结构和表面形貌分别由X射线衍射和原子力显微镜表征,显示 该薄膜为完全c轴取向四方相晶体结构,其表面具有原子尺度光滑性.采用角分辨X射线光电 子谱技术(ARXPS),研究了BaTiO3薄膜表面最顶层原子种类和排列状况.结果表 明,BaTiO3 关键词： 激光分子束外延 3薄膜')" href="#">氧化物BaTiO3薄膜 最顶层表面 角分辨X射线光电子谱}     

脉冲激光淀积BaTiO3薄膜的介电与铁电特性

用脉冲激光淀积方法在SrTiO₃衬底上制备了BaTiO₃/YBa₂Cu₃O_7-δ（铁电/超导）双层膜，X射线分析表明BaTiO₃薄膜是高度c取向的．对BaTiO₃薄膜的介电和铁电性能进行了实验研究．观察到铁电薄膜特有的电滞线和蝶型C-V曲线，薄膜呈现出较好的铁电性，在铁电随机存储等领域有重要的应用前景 关键词：     

水热条件下钛酸钡晶粒生长基元模型研究(Ⅱ)——生长基元稳定能计算及晶粒的成核与生长

报道了BaTiO₃晶粒生长基元稳定能计算的结果，并以此说明了水热条件下BaTiO₃晶粒成核及生长过程 关键词：     

静电场作用下α一LiIO3单晶中子衍射增强现象的理论解释

本文根据(1)在偏振锥光下,用显微镜观察到α-LiIO₃单晶中层状缺陷在静电场作用下的变化;(2)静电场对a-LiIO₃单晶的X射线形貌象的影响;(3)用X射线双晶衍射测得α-LiIO₃单晶晶格参数的不均匀性,指出α-LiIO₃单晶在静电场作用下中子衍射增强现象是由于晶体中的空间电荷(载流子、杂质离子和空位)在宏观尺度缺陷处富集,造成晶格参数有一定梯度。我们对通常计算中子布喇格散射截面的玻恩近似,引入消光修正,得到畸变晶格中子衍射强度公式,可以解释文献[4—6]中观察到的各种现象。 关键词：     

Formation and crystal structure of metallic inclusions in a HPHT as-grown diamond single crystal

One of the most important characteristics associated with crystal growth technology is the entrapment of inclusions by the growing crystal. Diamond single crystals prepared under high temperature-high pressure (HPHT) usually contain metallic inclusions. In the present paper, metallic inclusions in a diamond grown from a Fe-Ni-C system using the HPHT method have been, for the first time, systematically examined by transmission electron microscopy (TEM). Energy dispersive X-ray spectrometry (EDS) , combined with selected area electron diffraction (SAD) patterns, has been used to identify the chemical composition and crystal structure of the metallic inclusions. The metallic inclusions were found to be composed mainly of cubic γ-(FeNi), face-centered cubic (FeNi)₂₃C₆, ortho-rhombic Fe₃C and hexagonal Ni₃C, which may have been formed through the entrapment of molten catalyst by the growth front or through reaction of the trapped melt with contaminants in the diamond. Received: 19 June 2000 / Accepted: 21 June 2000 / Published online: 16 August 2000     

Twin Boundaries in Zinc Oxide with Additions of Gallium Oxide

Twin boundaries (TBs) in ZnO sintered with small additions of Ga₂O₃ have been characterized with advanced methods of transmission electron microscopy (TEM). The TBs and accompanying inversion domain boundaries are on {011¯3} planes of ZnO. The Ga content of the TB corresponds to an effectively half occupied {011¯3} plane determined from compositional maps calculated from electron spectroscopic images using electron filtering TEM. The structure of the TBs were investigated by high-resolution TEM, and images of focus series were used to reconstruct the complex electron wave. Simulated electron waves based on structure models of the TB were quantitatively compared with the reconstructed wave to identify and to refine atom positions. The twins can be considered to be created by a mirror operation on a {011¯3} plane of ZnO, and two alternating closed-packed polyhedral clusters of oxygen ions can be identified as building units of the TB structure. Unit 1 is occupied with Zn²⁺ by simply continuing ZnO₄ tetrahedra of the same type from both crystals to the TB. Using arguments of local charge balance unit 2 can only be occupied with the trivalent Ga³⁺ ion. The Ga³⁺ position was refined with high precision (±5 pm), and the resulting polyhedron is a GaO₅ square pyramid. The pyramids form densely occupied columns parallel to the twin axis [21¯1¯0]. The analysis of the TB structure yields a fractional occupancy of the boundary plane by Ga of 0.5, which is in good agreement with the result of the chemical composition measurement with energy filtered TEM.     

Electron microscopy study of the structural defect formation in ZnS under irradiation by electrons with energy of 400 keV

ZnS crystals grown form the vapor phase and ZnS/(001)GaAs epitaxial structures grown by metalorganic vapor phase epitaxy are studied by transmission electron microscopy after in situ irradiation in an electron microscope at an electron energy of 400 keV and intensity of (1–4) × 10¹⁹ electrons/cm² s. It is shown that irradiation leads to the formation of small (2.5–45 nm) dislocation loops with a density of 1.4 × 10¹¹ cm^–2, as well as voids and new phase inclusions ≤10 nm in size. Using the moire fringe contrast analysis, these inclusions were identified as ZnO and ZnO₂.     

Luminescence and structure of nanosized inclusions formed in SiO2 layers under double implantation of silicon and carbon ions

Luminescent and structural characteristics of SiO₂ layers exposed to double implantation by Si⁺ and C⁺ ions in order to synthesize nanosized silicon carbide inclusions have been investigated by the photoluminescence, electron spin resonance, transmission electron microscopy, and electron spectroscopy methods. It is shown that the irradiation of SiO₂ layers containing preliminary synthesized silicon nanocrystals by carbon ions is accompanied by quenching the nanocrystal-related photoluminescence at 700–750 nm and by the enhancement of light emission from oxygen-deficient centers in oxide in the range of 350–700 nm. Subsequent annealing at 1000 or 1100°C results in the healing of defects and, correspondingly, in the weakening of the related photoluminescence peaks and also recovers in part the photoluminescence of silicon nanocrystals if the carbon dose is less than the silicon dose and results in the intensive white luminescence if the carbon and silicon doses are equal. This luminescence is characterized by three bands at ～400, ～500, and ～625 nm, which are related to the SiC, C, and Si phase inclusions, respectively. The presence of these phases has been confirmed by electron spectroscopy, the carbon precipitates have the sp ³ bond hybridization. The nanosized amorphous inclusions in the Si⁺ + C⁺ implanted and annealed SiO₂ layer have been revealed by high-resolution transmission electron microscopy.     

A combined SNMS and EFTEM/EELS study on focused ion beam prepared vanadium nitride thin films

We investigated the diffusion profiles and core-loss fine-structures (ELNES) of thin vanadium nitride films by electron energy-loss spectroscopy (EELS) and energy filtering transmission electron microscopy (EFTEM). The nitride layers have been produced by rapid thermal processing in a NH₃ or N₂ atmosphere and have then been cross-sectioned with a focused ion beam instrument (FIB) under mild milling conditions to maintain crystallography. For the high-resolution electron energy-loss spectroscopy studies (HREELS), a recently developed TEM gun monochromator, implemented into a 200 kV field emission gun column was used in combination with a new post-column spectrometer. It was found that, dependent on substrate and atmosphere, layers with different vanadium and nitrogen content were formed, showing distinct differences in their ELNES. With an energy resolution at the 0.2 eV level and a TEM beam spot size of approximately 2 nm these layers could be unambiguously identified when compared to theoretical ELNES simulations from the literature.     

Ferromagnetism in Mn-doped ZnO due to impurity bands

We have prepared quasi-homoepitaxial Zn_0.95Mn_0.05O-films on ZnO substrates by pulsed laser deposition. The thin films were characterized by in situ RHEED during growth, X-ray diffraction and reflectometry, as well as transmission electron microscopy (TEM). The magnetic properties have been analyzed by SQUID magnetometry and by measuring the anomalous Hall effect. By varying the growth conditions (substrate temperature: 200–600 ^∘C, deposition atmospheres: Ar, O₂) a different concentration of impurities has been generated. Our results show that the films are electron doped and exhibit a ferromagnetic coupling that depends on the impurity concentration.     

Shape-controlled synthesis of Cu2O microcrystals by electrochemical method

Cuprous oxide (Cu₂O) microcrystals have been successfully synthesized via a facile electrochemical method in alkaline NaCl solution with copper plate and graphite slice as electrodes and Na₂Cr₂O₇ as additive. The as-synthesized products have been systematically studied by X-ray powder diffraction (XRD), field emission scanning electron microscope (FESEM), transmission electron microscope (TEM), selected area electron diffraction (SAED) and ultraviolet-visible spectrum (UV-vis). The results indicate that the pH value, temperature and potential play important roles in the morphology control besides the crystal habits of Cu₂O. The possible mechanism has been explored in the article.     

TEM Characterisation of YNi2B2C Thin Film Microstructure

A thin film of the superconductor YNi₂B₂C deposited on an MgO(001) substrate by pulsed laser deposition has been investigated by transmission electron microscopy (TEM). Plan-view TEM analyses show that the YNi₂B₂C film consists of isolated rectangular grains distributed within a second phase. This phase was identified as the monoclinic phase Y₂Ni₁₅B₆ with lattice parameters a=1.422 nm,b=1.067 nm,c=0.958 nm and β=95°. Additionally, the cubic phase Y₂O₃ with lattice constant a=1.06 nm was identified within the film. PACS 74.70.Dd; 74.78.Db; 68.37.Lp; 68.55.-a     

The investigation of multiply twinned L10-type FePt nanoparticles by transmission electron microscopy

Thin films of FePt nanoparticles were prepared by co-deposition of Fe and Pt on to amorphous C films kept at 350°C. As-prepared films were composed of disordered Fe–Pt nanoparticles with a fcc structure, where twinned and multiply twinned Fe–Pt nanoparticles could be identified by transmission electron microscopy (TEM) and electron diffraction. Atomic ordering from fcc to L1₀ structure was followed by in-situ TEM observation during heating up to 750°C. Multiply twinned (fivefold) nanoparticles of the L1₀ FePt were observed for the first time by high-resolution TEM observation. In these nanoparticles the crystallographic c axes of L1₀ structure is oriented parallel to the film plane in each segment. The stability of the fivefold FePt nanoparticles is briefly discussed.     

Synthesis of bismuth nanocap arrays on quartz substrates and their surface plasmon resonance properties

Bismuth nanocap arrays have been prepared by vacuum depositing Bi films onto the surfaces of self-assembled monolayer arrays of SiO₂ nanoparticles. The surface morphologies, structures, and optical properties of the obtained samples have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscope (AFM), X-ray diffraction (XRD), and ultraviolet–visible–near infrared (UV–vis–NIR) spectrophotometer. TEM and AFM images indicated that the SiO₂/Bi composite nanoparticles were incompletely encapsulated and their surfaces were relatively rough. UV–vis–NIR absorption spectra showed that Bi nanocap arrays had strong and tunable surface plasmon resonance peaks in the visible and near infrared regions, which were dependent dramatically on the relative ratio of the SiO₂ core diameter to the Bi cap thickness.