Si80笼状分子的结构研究

采用基于密度泛函的第一性原理计算方法,构建了Si₈₀笼状分子的模型,并对其结构和电学特性进行了考察. 研究发现,经过结构优化计算,Si₈₀分子从I_h高对称性下降为T_h,但仍然保持较好的笼状结构. 对Si₈₀笼状分子的稳定性、轨道分布和电荷分布等性质进行了分析和讨论. 关键词： 80')" href="#">Si₈₀ 富勒烯 结构     

Si3N4/Si表面Si生长过程的扫描隧道显微镜研究

利用原位扫描隧道显微镜和低能电子衍射分析了Si的纳米颗粒在Si₃N₄/Si(111)和Si₃N₄/Si(100)表面生长过程的结构演变.在生长早期T为350—1075K范围内,Si在两种衬底表面上都形成高密度的三维纳米团簇,这些团簇的大小均在几个纳米范围内,并且在高温退火时保持相当稳定的形状而不相互融合.当生长继续时,Si的晶体小面开始显现.在晶态的Si₃N₄(0001)/S 关键词： 氮化硅 扫描隧道显微镜 纳米颗粒     

Al196团簇结构及熔化行为的分子动力学模拟

运用分子动力学方法结合退火及淬火技术,采用半经验的Gupta原子间多体势,系统研究了Al₁₉₆团簇的熔化特性.模拟结果表明:从不同的初始结构出发得到的熔化行为明显不同.从较低能量稳定结构出发,会出现明显的比热呈现双峰的熔化行为;而从基态或接近于基态的低能稳定结构出发.则呈现出比热显示单峰的熔化现象.通过分析不同温度点上团簇淬火结构的势能分布图给出了Al₁₉₆团簇的不同（比热出现双峰或单峰）熔化行为的成因.     

Si10团簇成键条件和解离行为的密度泛函紧束缚研究

本研究利用遗传算法和基于密度泛函理论的紧束缚方法相结合的计算方法,研究了Si₁₀团簇的原子堆积结构的成键条件和电子性质.计算结果发现,Si₁₀团簇的最低能稳定结构表现为以一个三棱柱体为基础结构单元,在其3个侧面和一个底面堆积了四个金字塔堆积结构,形成了由四个金字塔包围三棱柱体的类球形结构.原子间成键强烈依赖于团簇中各原子紧邻原子的几何排布情况,原子间交叠电子布居数具有显著的方向性,随着键长增加迅速减小.由团簇中各原子成键条件的分析,可以判断Si₇团簇是Si₁₀团簇最容易形成的解离产物,然后出现的是Si₆团簇.     

无杂质空位扩散法造成InGaAsP/InP多量子阱结构带隙蓝移规律的研究

采用光荧光谱(PL)和光调制反射谱(PR)的方法,研究了由Si₃N₄、SiO₂电介质盖层引起的无杂质空位(IFVD)诱导的InGaAsP四元化合物半导体多量子阱(MQWs)结构的带隙蓝移。实验中Si₃N₄、SiO₂作为电介质盖层,用来产生空位,再经过快速热退火处理(RTA)。实验结果表明:多量子阱结构带隙蓝移和退火温度、复合盖层的组合有关。带隙蓝移随退火温度的升高而加大。InP、Si₃N₄复合盖层产生的带隙蓝移量大于InP、SiO₂复合盖层。而InGaAs、SiO₂复合盖层产生的带隙蓝移量则大于InGaAs、Si₃N₄复合盖层。同时,光调制反射谱的测试结果与光荧光测试的结果基本一致,因此,PR谱是用于测试带隙变化的另一种方法。     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si₃N₄纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

a-Si:H中本征缺陷引起的赝隙态

本文取原子集团模型Si₈H₁₈,Si₁₇及从连续无规网络中挖取的集团模型Si₂₉和Si₄₇,用CNDO LCAO-MO方法计算其电子结构,探讨了a-Si:H中由弱键、弯键和带电组态等本征缺陷引起的赝隙态分布。结果表明,当弱键拉伸时,两个弱键态移动并收缩至带隙中央;过剩电荷使弱键能级移至价带顶或导带底附近;弯键态主要出现在价带顶附近。当弯键曲率较大时,弯键态上移至带隙中央以下的区域。结构拓扑无序导致 关键词：     

氮化硅薄膜的微结构

利用TEM,STM和PDS显微光度计研究了ECR-PECVD技术制备的Si₃N₄薄膜的微结构.结果表明：在较低沉积温度下，ECR-PECVD制备的Si₃N₄薄膜是一种纳米α-Si₃N₄薄膜，其晶粒粒度在14—29nm间，而且这种薄膜具有较好的表面平整度.初步分析了ECR-PECVD制备的Si₃N₄在较低沉积温度下形成晶态薄膜的机理. 关键词：     

ReSi1.75电子结构的第一性原理研究

基于第一性原理全势线性缀加平面波方法和局域密度近似(LDA)，对ReSi_1.75的基态晶格属性进行了研究. 结构优化的结果表明，ReSi_1.75的基态平衡晶格常数比实验值小约0.6%. 在LDA计算基础上，考虑局域的Re的d电子库仑作用，用LDA+U方法计算了ReSi_1.75的电子结构，发现当U_eff=U-J=4.4eV时，能带结构呈半导体性质. 具有0.12eV 关键词： 1.75')" href="#">ReSi_1.75 局域密度近似 自相互修正作用 电子结构     

Cu掺杂β-Si3N4的力学性能和电子结构的第一性原理研究

采用基于密度泛函的第一性原理方法研究了(Si_3-xCu_x)N₄(x=0,0.25,0.5,0.75,1)晶体的稳定性、力学性能和电子结构,分析了Cu掺杂对β-Si₃N₄力学性能的影响机制.结果表明,(Si_3-xCu_x)N₄为热力学稳定结构,Cu掺杂降低了β-Si₃N₄的稳定性.由弹性常数和Voigt-Reuss-Hill近似看出,(Si_3-xCu_x)N₄满足波恩力学稳定性判据,Cu掺杂使得β-Si₃N₄的体模量、剪切模量和杨氏模量降低,当x=0时,(Si_3-xCu_x)N₄的体模量、剪切模量和杨氏模量最大,分别为234.3 GPa、126.7 GPa和322.1 GPa.根据泊松比和G/B值判断出(...     

Improved endohedral fullerenelike structures of silicon clusters Si31–Si39 by density functional calculations

We extensively search for the endohedral silicon-fullerene structures of Si₃₁–Si₃₉ using the combination of a tight-binding potential with the density functional theory. The resulting structures of our best candidates characterize more compact features comparing to previous isomers [J. Am. Chem. Soc. 126, 13845 (2004); J. Chem. Phys. 124, 164311 (2006)]. Most of our best candidates belong to new families featuring different core/cage combinations or different original carbon fullerene cages with respect to those of previous isomers. Energy calculations reveal that our best candidates are more stable than the previous best ones at the PW91 level, except for n = 34 and 38. The predicted relative stabilities of these isomers remain even at finite temperatures. In addition, the densities of dangling-bond atoms in the surfaces of our Si₃₃ and Si₃₉ isomers are significantly lower than the previous best candidates, as well as lower than those of their neighbors. This finding together with the densities of the active sites in the surfaces of the previous best candidates of Si₃₄ and Si₃₈ is roughly consistent with the observed relative reactivities of the silicon clusters in the size range of n = 31-39.     

R13Fe74Si13三元合金的结构与磁性

本文对R₁₃Fe₇₄Si₁₃(R=Ce,Pr,Nd,Gd,Tb,Dy,Ho,Er,Y)三元合金的结构和磁性进行了研究。结果表明,R₁₃Fe₇₄Si₁₃的主相为R₂(Fe_0.85Si_0.1517赝二元金属间化合物,而不出现类似于R₂Fe₁₄B的三元 关键词：     

First principle calculation on the electronic structure of CeRu2Ge2

The electronic structure of CeRu₂Ge₂ has been calculated using the self-consistent full-potential linearized augmented plane wave method (FP_LAPW) based on the density functional theory (DFT). The effect of the position exchanging between Ru and Ge atoms is studied. It shows that the magnetic moment of Ce ion is sensitive to the position exchanging between them. The result also reveals that the spin–orbit interaction and on-site Coulomb potential should be added on the Ce-derived 4f orbitals to obtain the correctly ground-state magnetic moment of CeRu₂Ge₂. The electronic structures of CeRu₂Ge₂ and its isostructural compound CeRu₂Si₂ have also been compared.     

Theoretical investigation on the electronic structure, elastic properties, and intrinsic hardness of Si2N2O

According to the density functional theory we systematically study the electronic structure, the mechanical prop- erties and the intrinsic hardness of Si2N2O polymorphs using the first-principles method. The elastic constants of four Si2N2O structures are obtained using the stress-strain method. The mechanical moduli (bulk modulus, Young’s mod- ulus, and shear modulus) are evaluated using the Voigt-Reuss-Hill approach. It is found that the tetragonal Si2N2O exhibits a larger mechanical modulus than the other phases. Some empirical methods are used to calculate the Vickers hardnesses of the Si2N2O structures. We further estimate the Vickers hardnesses of the four Si2N2O crystal structures, suggesting all Si2N2O phases are not the superhard compounds. The results imply that the tetragonal Si2N2O is the hardest phase. The hardness of tetragonal Si2N2O is 31.52 GPa which is close to values of β-Si3N4 and γ-Si3N4.     

Quasiparticle band structure of CeCu2Si2 and CeAl3

The band structure for the ground state is obtained for CeCu₂Si₂ and CeAl₃ within the local-density approximation (LDA). Subsequently, the quasiparticle band structure is calculated on the basis of the Kondo Lattice Ansatz (KLA) for the Cerium 4f state using the LDA potential parameters for all other electrons. The KLA requires the specification of both the symmetry of the scattering channel, which is taken from the crystal-field (CF) ground state, and the energy dependence of the scattering phase shift, for which a Kondo resonance is assumed. Different results are obtained for two choices of the CF ground-state parameters for CeCu₂Si₂. Based on our results the low temperature specific heat is discussed.     

Magnetic order in RCr\mathsf{_{2}}Si\mathsf{_{2}} intermetallics

The magnetic structure and ordering temperatures of three intermetallic compounds which crystallize in the tetragonal ThCr₂Si₂ structure, TbCr₂Si₂, HoCr₂Si₂ and ErCr₂Si₂, have been determined by neutron diffraction, differential scanning calorimetry and magnetization measurements. The Cr-sublattice orders anti-ferromagnetically with Néel temperatures of 758 K for TbCr₂Si₂, 718 K for HoCr₂Si₂ and 692 K for ErCr₂Si₂. Chromium atoms located at 4d crystallographic sites are aligned anti-parallel along the c-axis, with G_ZCr magnetic modes. In contrast with metallic bcc Cr, the refined room temperature value of the ordered Cr moment is anomalously large for all three compounds. No long range magnetic order of the R sublattice in TbCr₂Si₂ and HoCr₂Si₂ is observed, whilst the Er sublattice in ErCr₂Si₂ orders independently of the Cr sublattice below 2.4 K with moments ferromagnetically aligned in the basal plane.Received: 4 November 2003, Published online: 30 January 2004PACS: 75.25. + z Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source X-ray scattering, etc.) - 75.30.Cr Saturation moments and magnetic susceptibilities - 75.50.Ee Antiferromagnetics     

Crystallisation kinetics of amorphous Si–C–N ceramics: Dependence on nitrogen partial pressure

The crystallisation kinetics of amorphous precursor-derived ceramics of composition Si₂₆C₄₁N₃₃ is investigated as a function of temperature and nitrogen partial pressure using X-ray diffractometry. Isothermal annealing at a pressure of 1 bar leads to simultaneous crystallisation of Si₃N₄ and SiC, while only crystalline SiC is formed with annealing at a reduced pressure of 1 mbar. Rate constants of crystallisation are determined using the Johnson–Mehl–Avrami–Kolmogorov (JMAK) formalism. For temperatures below 1700°C, crystallisation rates are significantly higher for annealing at 1 mbar compared to 1 bar. For an explanation of the results, a model is proposed, which is based on diffusion-controlled nucleation and growth of crystalline Si₃N₄ and SiC in an amorphous matrix combined with thermal decomposition of Si₃N₄ at high temperatures.     

First-principles calculations of the structural,elastic, electronic and optical properties of Si2P2O and Ge2P2O at high pressures

The structures of Si₂P₂O and Ge₂P₂O with the space group Cmc21 are derived. The structural, mechanical, elastic anisotropy, electronic and optoelectronic properties are calculated by first principles calculations based on density functional theory (DFT) with generalized gradient approximation (GGA) at high pressure for Si₂P₂O and Ge₂P₂O. By using the elastic stability criteria, it is shown that their structures are all stable. The phonon dispersion spectra are researched throughout the Brillouin zone as implemented in the CASTEP code, which indicates that the optimized structures are stable dynamically. The brittle/ductile behaviors are assessed in the pressures from 0 GPa to 50 GPa. Our calculations present that the performances of them become ductile with pressure rise. Moreover, the anisotropies of them are discussed by the Young's moduli at different pressure, and the results indicate that the anisotropies of them are obvious. The direct band structures of Ge₂P₂O and the indirect band gap of Si₂P₂O show that Si₂P₂O and Ge₂P₂O present semiconducting character at 0 GPa and 50 GPa. The band structures of Si₂P₂O are changed obviously with the increase of pressure. The total DOS originate mainly from O ‘s’ states, O ‘p’ states, P ‘s’ states and P ‘p’ states and M ‘p’ states (M=Si, Ge). The trends of DOS for Si₂P₂O and Ge₂P₂O display many similarities, and the change of DOS is obviously affected by the pressure for Si₂P₂O. The optoelectronic properties of them are researched. The calculated static dielectric constants, ɛ₁(0), are 3.2 at 0 GPa and 6.4 at 50 GPa for Si₂P₂O, and the values of Ge₂P₂O are 10.2 and 9.2 at 0 GPa and 50 GPa.     

First-principles investigations on thermodynamic properties of the ordered and disordered Si0.5Ge0.5 alloys

The structure, formation energy, and thermodynamic properties of Si_0.5Ge_0.5 alloys are investigated through first-principles method. The ordered and disordered structures of Si_0.5Ge_0.5 compounds are considered. Our results show that thermodynamic instabilities of Si_0.5Ge_0.5 alloys at 0 K can be judged from the calculated formation energy. However, the alloy might be prepared at specified environment owing to the entropy effects considered. Moreover, the temperature dependence of the heat capacity, Debye temperature and thermal expansion coefficient of ordered and disordered structures are discussed.     

Simulations of structures of amorphous SixC1−x films

Amorphous Si_xC_1−x films possess the potential to improve wear performance in humid atmospheres and at higher temperatures. But some experimental work on the films showed that silicon contents greatly influenced their microstructures and mechanical properties. Therefore, simulations of molecular dynamics were carried out to predict structures of the Si_xC_1−x films at different silicon contents. The results show that the sp³/sp² ratio of all the films increases, but the stiffness of the films is decreasing with an increase in silicon contents. Moreover, silicon atoms are almost surrounded by carbon atoms, which is in agreement with the experiments.