弛豫铁电体队Pb(Mg,Nb)O_3系统中有序畴的生长模型

本文基于有序-无序相变模型,从热力学上给出在的Pb(Mg,Nb)O_3系统中的有序态,同时得到了长程序参量与B位离子组份的关系曲线,并在此基础上,利用电荷平衡条件,在二维平面上和三维空间里分别提出了有序畴的生长模型。计算结果与实验结果基本符合。     

Pb(Zr,Sn,Ti)O3反铁电陶瓷的低温相变扩散与极化弛豫

用弱场介电温谱、热释电流谱、强场电滞回线和变温X射线衍射谱研究了微量La掺杂Pb(Zr,Sn,Ti)O₃(PZST)反铁电(AFEt)陶瓷在-100—180℃温区内的结构与电学特性.弱场介电温谱显示,AFEt陶瓷在低温段(-100—50℃)呈现介电频率弥散(0.1—100kHz)和扩散型相变的特征,而变温X射线衍射谱却表明材料在这一温区内保持四方相结构;低温下经强场作用后,AFEt被诱导为亚稳三方铁电态,介电频率弥散消失.基于多元复杂化合物的组分起伏理论,讨论了PZST AFEt陶瓷 关键词： Pb(Zr Sn 3反铁电陶瓷')" href="#">Ti)O₃反铁电陶瓷 反铁电弛豫 相变 变温X射线衍射     

弛豫铁电体材料的内耗研究

内耗测量被证明是研究弛豫铁电体中相变的有效方法之一。我们研究了弛豫铁电陶瓷（1-x％）Pb（Mg1/3Nb2／3）O3-x％PbTiO3（PMNTx），（0〈x〈33）在低频（0．1Hz至10Hz）和音频（1kHz）的内耗。实验表明在铁电微畴的冻结温度出现了一个相变内耗峰和模量的软化，并且随作PbTiO3含量的增加相变逐渐增强，该相变与微畴冻结之间的关系还需作进一步的研究。同时我们还测量到了铁电纳米微畴的反转引起的力学响应，这与其介电响应结果是一致的。     

弛豫铁电体材料的内耗研究

内耗测量被证明是研究弛豫铁电体中相变的有效方法之一.我们研究了弛豫铁电陶瓷 (1-x%)Pb(Mg1/3Nb2/3)O3-x%PbTiO3 (PMNTx), (0＜x＜33)在低频(0.1 Hz至10Hz)和音频(1 kHz)的内耗.实验表明在铁电微畴的冻结温度出现了一个相变内耗峰和模量的软化,并且随作PbTiO3含量的增加相变逐渐增强,该相变与微畴冻结之间的关系还需作进一步的研究.同时我们还测量到了铁电纳米微畴的反转引起的力学响应,这与其介电响应结果是一致的.     

(1-x)(K0.5Na0.5)NbO3-xSrTiO3陶瓷的弛豫铁电性能

通过对（1-x）（K_0.5Na_0.5）NbO₃-xSrTiO₃（0≤x≤0.15）陶瓷的相组成、晶体结构和介电性能的研究发现,该陶瓷为单一的钙钛矿结构相.当x含量较小（x＜0.1）时为正交相结构,x≥0.1时转变为四方相结构.随着SrTiO₃掺杂量的增加,样品的致密度增加,样品由正常铁电相逐渐向弥散铁电相转变,且相 关键词： 弛豫铁电体 0.5Na_0.5）NbO₃铁电陶瓷')" href="#">（K_0.5Na_0.5）NbO₃铁电陶瓷 3掺杂')" href="#">SrTiO₃掺杂 相变温度     

相互作用能量参数对A(B1/21B1/22)O3系统有序畴形成的影响

本文利用有序-无序相变理论讨论了A(B_1/2¹B_1/2²)O₃系统中的有序-无序相变,半定量地研究了在A(B_1/2¹B_1/2²)O₃系统中相互作用能参数对形成B¹:B²=1:1有序畴的影响,理论计算结果与实验结果基本一致。 关键词：     

Ba(Mg1/3Nb2/3)O3电子结构第一性原理计算及光学性能研究

Ba(Mg_1/3Nb_2/3)O₃ (BMN)复合钙钛矿陶瓷具有高介电常数和高品质因子等介电性能, 预示了其在光学领域的应用前景. 本文采用第一性原理方法计算了BMN的电子结构, 对其本征光学性能进行分析和预测. 对固相合成六方相BMN的XRD 测试结果进行Rietveld精修(加权方差因子R_wp=6.73%, 方差因子R_p=5.05%), 在此基础上建立晶体结构模型并对其进行几何优化. 运用基于密度泛函理论(DFT)的平面波赝势方法, 对六方相BMN晶体模型的能带、态密度和光学性质进行理论计算. 结果表明BMN的能带结构为间接带隙, 禁带宽度E_g=2.728 eV. Mg-O和Ba-O以离子键结合为主, Nb-O以共价键结合为主, 费米面附近的能带主要由O-2p和Nb-4d 态电子占据, 形成了d-p轨道杂化. 修正带隙后, 计算了BMN沿[100]和[001]方向上的复介电函数、吸收系数和反射率等光学性质. 结果表明, BMN近乎光学各向同性, 在可见光区, 其本征透过率为77%< T <83%, 折射率为1.91< n <2.14, 并伴随一定的色散现象. 实验测试结果与理论计算结果相吻合.     

铁电磁体Pb(Fe1/2Nb1/2)O3的磁电性能研究

对铁电磁体Pb(Fe_1/2Nb_1/2)O₃单晶样品中的 介电和磁性能进行了研究. 认为在其反铁磁相变点观察到的介电常数和损耗的异常来自于自发极化序和自旋序的相互作用 引起的磁电耦合. 磁矩与温度的关系曲线在Nel点以下的低温段呈上升趋势，测得的磁滞 回线证明有弱铁磁性出现. 对铁电磁体磁电相互作用的Monte Carlo模拟得到与实验类似的 结果. 关键词： 铁电磁体 1/2Nb_1/2)O₃')" href="#">Pb(Fe_1/2Nb_1/2)O₃ 磁电耦合 Monte Carlo模拟     

The transverse laser induced thermoelectric voltages in step flow growth （1-x）Pb(Mg1/3Nb2/3)O3-xPbTiO3 thin films

This paper reports that the transverse laser induced thermoelectric voltages (LITV) are observed for the first time in the step flow growth (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT,x = 0.20, 0.33, 0.50) thin films deposited on vicinal-cut strontium titanate single crystal substrates. Because lead magnesium niobate-lead titanate is a solid solution of lead magnesium niobate (PMN) and lead titanate (PT), there are two types of signals. One is wide with a time response of a microsecond, and the other superimposed with the wide signal is narrow with a time response of a nanosecond. The transverse LITV signals depend on the ratio of PMN to PT drastically. Under the irradiation of 28-ns pulsed KrF excimer laser with the 248-nm wavelength,the largest induced voltage is observed in the 0.50Pb(Mg1/Nb2/3)O3-0.50PbTiO3 films. Moreover, the effects of film thickness, substrates, and tilt angles of substrates are also investigated.     

GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH4/O2/H2 ATMOSPHERE

Partially oriented and highly textured diamond films on Si( 111 ) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5×10⁸cm^-2 was realiged in 3 min by near-surface glow discharge. The os-grown films were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH₄/H₂, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond (111) surface was demonstrated to be in Stranski-Krastanov model by SEM.     

Generation of oxygen vacancies in the surface of ferroelectric Pb(Nb,Zr,Ti)O3

Controlled generation of oxygen vacancies in the surface of ferroelectric thin films is crucial to study how surface reduction affects molecular adsorption and catalysis of gas-surface phenomena. We demonstrate the effective reduction in the surface of 4% niobium doped 20/80 PZT (PNZT) thin films. The sample was characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), and heated at 200, 250 and 300 °C in a high vacuum system at 10⁻⁵ T of H₂. Auger peak-to-peak intensities was used to study the elemental concentrations during the reduction experiment. High-resolution XPS spectra were acquired before and after reduction process for detecting the changes of the oxygen signal. Vacancies production rates as slow as 0.21% per minute were achieved and the temperature was not a key parameter in the process. Experiments at higher hydrogen pressures and lower temperatures might improve the control of the vacancies production.     

Modification of ferroelectric hysteresis in Pb(Nb,Zr,Ti)O3 thin films induced by CO2 adsorption

We report on the modification of ferroelectric hysteresis in Pb(Nb,Zr,Ti)O₃ thin films under the adsorption of CO₂ gas. The samples were exposed to the gas in ultra high vacuum while different voltages between the top (Ag) and bottom (Pt) electrodes were applied. After dosing, the samples were heated from room temperature at 1.8 K/s, and a mass spectrometer was used to detect the desorbed molecules. The effective molecular sticking was demonstrated by the appearance of the carbon Auger peak in the surface of the sample and by the presence of CO₂ in the desorption curves. After +(−) 9.9 V were applied to the bottom electrode during dosing, we found a shift of −0.52 (+0.58) μC/cm² in the remnant polarization. These evidences suggest the existence of a depolarizing field induced by molecular adsorption at the surface of the top electrode, and contribute to highlight the potential use of ferroelectric thin films as gas sensors.     

A compositional fluctuation and properties of Pb(Zr,Ti)O3

Structure and properties of piezoelectric materials of composition Pb(Zr_xTi_1?x)O₃ near the morphotropic phase boundary between tetragonal and rhombohedral phases are studied. When these materials were prepared by a new “wet-dry combination technique”, no coexistence of these two phases was found in any range of compositions. This fact is in contrast with the case of Pb(Zr_xTi_1?x)O₃ prepared by an ordinary dry method. The coexistence behavior is interpreted in terms of compositional fluctuation, on the basis of which various properties of the materials are explained.     

Electrical characteristics and low-temperature sintering of BiFeO3-modified Pb(Zr,Ti)O3–Pb(Fe2/3W1/3)O3–Pb(Mn1/3Nb2/3)O3 ceramics with ZnO addition

Effects of ZnO addition on electrical properties and low-temperature sintering of BiFeO₃-modified Pb(Zr,Ti)O₃–Pb(Fe_2/3W_1/3)O₃–Pb(Mn_1/3Nb_2/3)O₃ were investigated. The investigations revealed that the sintering temperature can be decreased to 950 °C, and the favorable properties were obtained with 0.10 wt% ZnO added ceramics. The electrical properties were as follows: d₃₃ = 313 pC/N, K_p = 0.56, tan δ = 0.0053, ε_r = 1407 and T_c = 295 °C, which showed that this system was a promising material for the multilayer devices application.     

DIELECTRIC RELAXATION BEHAVIOR OF CERAMICS IN THE Pb(Zn1/3Nb2/3)O3-BaTiO3-PbTiO3 SYSTEM

The dielectric properties of ceramics in Pb(Zn_1/3Nb_2/3)O₃-BaTiO₃-PbTiO₃ system were characterized using dielectric-temperature spectra. A spontaneous (zero field) relaxor-normal ferroelectric tran sition was observed for tetragonal rich compositions. A significant hysteresis effect accompanied by this transition, similar to first-order phase transition of normal ferroelectrics. This behavior was different from that of other relaxors, in which such transitions occurred only under a biased dc field. This observation was explained in terms of a thermally driven transformation from an ensemble of polar microregions to normal long-range ferroelectric state (micro-macro domain transition), which was attributed to the internal field resulting from the tetragonal strain.     

Ferroelectric relaxor behaviour in Pb(Fe0.5Ta0.5)O3

The relaxor ferroelectric lead iron tantalate, Pb(Fe_0.5Ta_0.5)O₃ (PFT) is synthesized by Coulombite precursor method. The X-ray diffraction pattern of the sample at room temperature shows a cubic phase. The field dependence of dielectric response is measured in a frequency range 0.1 kHz — 1 MHz and in a temperature range from 173–373 K. The temperature dependence of permittivity (ɛ′) shows broad maxima at various frequencies. The frequency dependence of the permittivity maximum temperature (T _m ) has been modelled using Vogel-Fulcher relation.      

铁电磁体Pb(Fe1/2Nb1/2)O3相变特征

借助与示差扫描量热法、磁化率测量、电子自旋共振、铁电与介电性质测量及电子衍射系统地研究了Pb(Fe_1/2Nb_1/2)O₃(PFN)的电、磁性质和相变特征．结果表明发生在380K附近的顺电－铁电转变和发生在145K附近的顺磁 反铁磁转变分别为一级相变和二级相变或弱一级相变．在室温下,PFN的剩余极化与矫顽场分别为11.5μC/cm²和3.04kV/cm.介电测量表明PFN的顺电-铁电相变为弥散型相变．其弥散指数为1.62.电子衍射表明Fe³⁺与Nb⁵⁺离子在B位置上是无序分布的,正是这种与无序分布相关联的成分涨落导致铁电相变的弥散性. 关键词：     

Nanoembossing and piezoelectricity of ferroelectric Pb(Zr0.3,Ti0.7)O3 nanowire arrays

Arrays of ferroelectric PZT nanowires with lateral size down to 200 nm were fabricated by nanoembossing technology. Structural characterization of the embossed PZT film was studied by Raman spectroscopy. Multidomain configurations of a single nanowire have been explored by vertical mode piezoresponse force microscopy (VPFM). The local electric polarization of the individual ferroelectric nanowire has also been investigated. Excellent ferroelectric and piezoelectric characteristics observed in the embossed PZT nanowires suggest nanoembossing technique proposed in this work is promising to become a useful method for ferroelectric nanowires fabrication.