The influence of intense electromagnetic field on the energy-gap between spin branches in ferromagnetic semiconductors

The influence of an intense laser field on the intraband motion of a charge carrier in the localized moment potential of a ferromagnetic semiconductor is discussed. The quasienergy spectrum of a free carrier is calculated and it is shown that for very large fields the energy-gap between the spin branches decreases with increasing laser amplitude.     

Theory of absorption and refraction of direct-gap semiconductors with arbitrary free-carrier concentrations

The complex optical dielectric function of highly excited semiconductors is determined very accurately from the excitonic to the quasi-metallic limit, by solving the Bethe-Salpeter equation in the statically screened ladder approximation by matrix inversion. The resulting spectra show especially the changes which occur around the Mott-transition.Project of the Sonderforschungsbereich Frankfurt/Darmstadt, financed by special funds of the Deutsche Forschungsgemeinschaft     

The spin polarization of conduction electrons in ferromagnetic semiconductors

Within the framework of the s?f exchange model the exact asymptotics of the spin polarization of conduction electrons in the non-degenerate ferromagnetic semiconductor at low temperatures is calculated. It is demonstrated that the temperature dependent corrections to the total density of states are proportional to $\text{T}{}^{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}$.     

One-photon absorption in direct gap semiconductors

One-photon absorption coefficients of InSb and GaAs are calculated using the first order perturbation theory assuming a two band model in which the interband energy difference is given by $E(k)=E_g{(1+\frac{h^2{k}^2}{m^{*E}g})}^{1/2}$ The results obtained are in much better agreement with the experimental data than the results of first order perturbation calculations using parabolic bands.     

Localization transitions for nuclear spin waves in ferromagnetic alloys

We investigate the possible localization of nuclear spin waves associated with the minority constituent of a binary ferromagnetic alloy. NMR methods for observing the transition and the time scale of propagating spin waves are suggested.     

Electron spin polarization and conduction band structure of doped ferromagnetic semiconductors

The spin polarization of the conduction electrons of a doped semiconductor (e.g. EuO + x%Gd) is calculated using a moment method together with an alloy analogy. It is shown to be caused by a complicated temperature- and carrier concentration-dependence of the quasiparticle spectrum of the s-f model. Obtained polarization agrees very well with recent photoemission experimental data.     

L 0 - phonon instability in the free-carrier absorption in semiconductors under strong magnetic fields

The LO- phonon damping in an electron-phonon system in the presence of a laser beam and a d. c. magnetic field is discussed. It is shown that near the laser-cyclotron resonance, and for the laser beam propagating perpendicularly to the magnetic field the LO-phonon population in a relatively narrow range of $\text{K}$ may grow with time.     

Indirect exciton transitions in the two-photon absorption in semiconductors

The theory of indirect two-photon exciton transitions is developed from third-order time-dependent perturbation theory. The problem is treated by introducing three different band models; a four-band, a two-band and an intermediate (three-band) model. Selection rules and numerical estimates show that the three-band model is the most favourable for this type of process. An application for the case of GaP is performed.     

Micromagnetic phase transitions and spin wave excitations in a ferromagnetic stripe

Magnetic excitations of micrometer-wide ferromagnetic stripes subjected to a transverse applied field have been measured between 1 and 20 GHz. The complexity of the observed response is attributed to the spatially nonuniform equilibrium spin distribution. This one is modeled analytically and numerically, which allows one to distinguish two micromagnetic phases governing the ground state. The nucleation-related phase transitions are evidenced by soft modes, while the different observed resonances are attributed to spin wave modes localized in the two phases and at their interface.     

Resistance peak and giant magnetoresistance of degenerate ferromagnetic semiconductors with arbitrary spin polarization

The temperature peak of the resistance and the giant magnetoresistance of degenerate ferromagnetic semiconductors with an arbitrary degree of electron spin polarization are investigated. The spin-wave and paramagnetic domains are considered. The calculations are based on the notion of the magnetic-impurity scattering of carriers. Fiz. Tverd. Tela (St. Petersburg) 39, 1589–1593 (September 1997)     

Magnon instability in the free-carrier absorption in magnetic semiconductors under a strong d.c. magnetic field

The magnon damping in an electron-magnon system in the presence of a laser beam and a d.c. magnetic field is discussed. It is shown that near the laser-cyclotron resonance, and for the laser beam propagating perpendicularly to the magnetic field the magnon population in a relatively narrow range of k may grow with time.     

界面各向异性对双层铁磁薄膜自旋波性质的影响

在海森堡模型的基础上,采用界面参数化方法,将双层铁磁薄膜中自旋波本征值问题归结为联立求解能量约束方程和界面参数化方程.重点研究了界面各向异性对薄膜中自旋波本征问题的影响.结果表明:界面各向异性使对称模的波形在界面处呈现明显的钉扎现象,且界面模的能量随各向异性场增强而增大.     

Specific features of electron transitions in almost ferromagnetic semiconductors (with reference to FeSi)

In the context of spin-fluctuation theory, the possibility of formation of Anderson localized states caused by a strong scattering of electrons by spin density fluctuations in almost ferromagnetic semiconductors is considered. The results are applied to FeSi.     

Optical properties of III-Mn-V ferromagnetic semiconductors

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, the diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices.     

Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors

We show that one-photon absorption of linearly polarized light should produce pure spin currents in noncentrosymmetric semiconductors, including even bulk GaAs. We present 14x14 k.p model calculations of the effect in GaAs, including strain, and pseudopotential calculations of the effect in wurtzite CdSe.     

Quantum entanglement and quantum phase transitions in frustrated spin ladder with ferromagnetic interchain exchanges

Using the density matrix renormalization group technique, the quantum phase transitions in a frustrated spin-1/2 ladder with ferromagnetic interchain exchanges are investigated. According to our results, the two-rung entanglement is capable of describing the quantum phase transitions. Furthermore, its first order derivative is shown to be more sensitive than order parameters for determining phase boundary. Therefore, the intermediate columnar dimerized phase region is determined definitely.     

Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors

Diluted ferromagnetic semiconductors(DMSs) that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic(spintronic) devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ(Ga,Mn)As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature T_Co f 230 K has been achieved in(Ba,K)(Zn,Mn)_2As_2. However, most DMSs, including(Ga,Mn)As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba(Zn,Co)_2As_2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance(NMR) and muon spin rotation(μSR).