Efficiency of reverse cycles

It is demonstrated that the generally accepted treatment of the second law of thermodynamics is incorrect when the statement of the maximum limiting efficiency of the forward Carnot cycle is applied to the reverse cycles. An analysis of reversible cycles compared with the Carnot cycle shows that the reverse Carnot cycle has the lowest efficiency of all reverse cycles. A new characteristic is proposed — the thermal efficiency of reverse cycles, and a generalized theorem is put forward for the additivity of the thermal efficiencies of the forward and reverse cycles. A formulation of the second law of thermodynamics is suggested from the point of view of the efficiency of reverse cycles. Zh. Tekh. Fiz. 69, 11–14 (June 1999)     

Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases

Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 57Ohm are observed under forward bias. An unusual emission at 390ram appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 57Ohm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.     

Reverse Barkhausen jumps

The magnetic parameters, forward and reverse magnetic reversal jumps in iron-core quartzite specimens and in magnetite single crystals, and the effect of thermal treatment on the magnetic and electric parameters of quartzites are studied. Reverse Barkhausen jumps are larger than the forward ones, but they are considerably fewer. The maxima of forward jumps correspond to the coercive force, while those of the reverse ones to fields exceeding the coercive force. Possible causes of the manifestation of reverse Barkhausen jumps are discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fkika, No. 12, pp. 8–12, December, 1984.     

Effects of a reverse shock wave on neutrino oscillations in a new supernova model

It is known that in supernova explosions, there might be a reverse shock wave in addition to the forward shock wave during the explosion phase, when the mass of supernova is in a certain range. In this paper, we propose to add the reverse shock wave to the previous supernova model, in which only the forward shock wave was included,and thus obtain a new model. By analyzing the resonance condition as well as the density jump in the new model and using the Landau-Zener method, an expression for the crossing probability in high density matter(PH) is given.We proceed to study how PH varies with time and with neutrino energy when both the reverse shock wave and the forward shock wave are considered. From comparison with the previous results, where only the effects of the forward shock wave were considered, it is clear that the reverse shock wave brings significant changes to PH.     

稳压二极管的非线性伏安特性研究

用FD-UI-A非线性元件伏安特性实验仪测量了稳压二极管的正向和反向伏安特性,研究结果表明,稳压二极管的正向和反向伏安特性都呈现出非线性,但其正向和反向的lnI-Ud呈良好的线性关系,其斜率反映了二极管材料的导电特性.     

n,p柱宽度对超结SiGe功率二极管电学特性的影响

结合SiGe材料的优异性能与超结结构在功率器件方面的优势,提出了一种超结SiGe功率二极管.该器件有两个重要特点:一是由轻掺杂的p型柱和n型柱相互交替形成超结结构,取代传统功率二极管的n^-基区;二是阳极p⁺区采用很薄的应变SiGe材料.该二极管可以克服常规Si p⁺n^-n⁺功率二极管存在的一些缺陷,如阻断电压增大的同时,正向导通压降随之增大,反向恢复时间也变长.利用二维器件模拟软件MEDICI仿真 关键词： 超结 锗硅二极管 n p柱宽度 电学特性     

采用腔内设置限孔光阑抑制倒向波的理论分析

 氧碘化学激光器通常采用的环形腔存在着倒向波，它对正向波的输出功率以及光束质量不利，因此必须进行抑制。以对称环形共焦非稳腔为例，介绍了在腔内放置限孔光阑，通过改变倒向波与正向波经过增益介质部分的模体积比，从而抑制倒向波的方法。计算结果表明，这种方法对于负支腔倒向波的抑制效果要远远好于正支腔。     

Indentation of transversely isotropic power-law hardening materials: computational modelling of the forward and reverse problems

Using a combination of dimensional analysis and large deformation finite element simulations of triple indentations of 120 materials, a framework for capturing the indentation response of transversely isotropic materials is developed. By considering 4800 combinations of material properties within the bounds of the original set of 120 materials, forward algorithms that predict the indentation response of materials and reverse algorithms that predict the materials’ elastic and plastic properties from experimentally measured indentation responses are formulated for both longitudinal and transverse indentations. Issues of accuracy, reversibility, uniqueness and sensitivity within the context of the indentation of transversely isotropic materials are addressed carefully. Using 1400 combinations of material properties, it is demonstrated that there is perfect reversibility between the material properties and their indentation responses as predicted by the forward and reverse algorithms. On average, the differences between the results of the finite element analysis and those predicted by the forward algorithms for longitudinal or transverse indentations are less than 1%, thus demonstrating the high accuracy and uniqueness of the forward analysis. For longitudinal and transverse indentations, the reverse algorithms provide accurate results in most cases with an average error of 3 and 6%, respectively. A sensitivity analysis with a ±2% variation in the material properties in the forward algorithm and ±2% variation in the indentation responses in the reverse algorithms demonstrated the robustness of the algorithms developed in the present study, with the longitudinal indentations providing relatively less sensitivity to variability in indentation responses as compared to the transverse indentations.     

续流二极管续流瞬态反向恢复电压尖峰机理研究

电力电子变流装置中的开关续流元件功率二极管由续流到截止转换的反向恢复过程中会在负载上产生电压尖峰,且短时续流下电压尖峰会很大,极易造成器件过压失效. 为了有效指导电力电子装置的可靠性设计,基于半导体物理和功率二极管基本结构,深入论述了PIN结构续流二极管开关瞬态工作机理,利用存储电荷的分析方法推导出二极管续流瞬态下的反向恢复电压尖峰机理及其随续流时间的变化规律:电压尖峰在短时续流下较大,随续流瞬态时间的增大而减小. 以绝缘栅双极型晶体管和续流二极管组成的两电平半桥逆变单元为例进行实验,结果表明:二极管续流瞬态发生反向恢复的电压尖峰随续流瞬态时间的增大近似呈指数规律减小,待续流电流稳定后,电压尖峰趋于常数,并最终随着续流过程的结束而进一步减小直至恒定,验证了理论分析的正确性. 对完善续流二极管反向恢复机理以及提高电能变换装置的可靠性具有一定的理论意义和应用价值. 关键词： 续流二极管 正向导通 反向恢复 电导率调制     

The effect of frequency shifts on the power gain of a laser amplifier

Mode-locked pulses generated by an Nd-glass laser have been amplified in the forward and reverse directions by an Nd:POCl₃:ZrCl₄ liquid laser. The gain in the reverse direction was found to be greater than the gain in the forward direction due to a frequency shift introduced in the spectrum of the mode-locked pulses during the first passage through the amplifier. A simple theoretical explanation which is in good agreement with the experimental results is given.     

稳压管伏安特性测量中电表的正确接法

研究电流表接法对稳压二极管伏安特性测量结果的影响。理论分析和实验研究表明,测量稳压二极管的伏安特性时,在稳压管的正向死区和反向截止区电流表应该内接,在其正向导通区和反向击穿区电流表应该外接。这样,只要电流表内阻足够小且电压表内阻足够大,测量系统误差就远小于1%。     

Computer data analysis of the oscillating forward–reverse method

Nonequilibrium work theorems have recently gained wide acceptance as useful tools in determining free energy profiles for soft-matter systems. We have recently proposed an extension of the forward–reverse method, called the oscillating forward–reverse method; by introducing an oscillatory drift it enables the user to obtain PMFs from a single nonequilibrium pull. The analysis, although manageable, is non-trivial. We present here the data analysis and the software (OFR-AT) created to construct PMFs and associated uncertainties from the oscillating forward–reverse (OFR) method. The output analyzed by OFR-AT is often from molecular dynamics simulations, but as with the OFR method itself, it can be more generally applied. OFR-AT is a fast and efficient analysis tool that can analyze very large files (larger than 5 GB) in a short time period. We also describe the uncertainty and correlation calculations performed, provide a map of the data flow through the program, and present representative examples of PMF profiles calculated using OFR-AT.     

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.     

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages(BVs)simultaneously in AlGaN/GaN high-electron mobility transistors(HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from-5 V to-49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.     

90°束旋转环形非稳腔几何特性分析

分析了ＵＲ９０环形非稳腔（ＵｎｓｔａｂｌｅＲｅｓｏｎａｔｏｒｓｗｉｔｈ９０°ＢｅａｍＲｏｔａｔｉｏｎ）正向模和反向模的几何特性，讨论了反向模无阻挡时的振荡条件，并导出了理想ＵＲ９０环形非稳腔的光线追述方程，考查了此腔对激光增益介质的空间自平均效应。     

An investigation of metal/GaAs(100) interfaces by deep level transient spectroscopy

In this work we investigate the ability of DLTS to detect the presence of interface states at metal/GaAs(100) (n-type) interfaces where the semiconductor surface has been prepared by two different procedures. A correlation is observed between the magnitude of the ideality parameter determined from the current-voltage (I-V) characteristic of the diode and presence in the DLTS spectrum of a feature attributable to interface states. Schottky diodes have been fabricated with both gold and iron contacts which exhibit near ideal behaviour (n<1.1). No interface states were detected by DLTS on either of these diodes. However, diodes fabricated on oxidised GaAs surfaces, with higher idealities (1.5 <n < 2), exhibit additional electron trap levels in the DLTS spectrum. For the case of iron, a deep level of activation energy 0.55 eV is observed in the conventional reverse bias pulse sequence mode of DLTS operation. In addition, for both gold and iron diodes, a spectral feature which can be attributed to a broad distribution of interface states within the deplation region is observed during a forward bias pulse sequence.     

Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

In this paper, we present the combination of drain field plate(FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors(HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage(VRB) and the forward blocking voltage(VFB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRBand VFBwere improved from-67 V and 134 V to-653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.     

半导体断路开关实验研究

 介绍了半导体断路开关（SOS）特性参数测试平台和测试方法，并对半导体断路开关的截断阻抗、截断时间、电压增益、输出脉冲半高宽以及能量传递效率等参数进行了实验研究。结果表明，正、反向泵浦时间是影响半导体断路开关特性的最主要因素。实验获得了截断时间、电压增益和能量传递效率与正、反向泵浦时间的依赖关系以及SOS截断过程中的阻抗变化特性。     

Particle orientation and waveform asymmetry in Ba-ferrite tapes

Magnetic tapes used for credit cards and for identification and access control cards are migrating to extremely high coercivites (3000–4000 Oe) in order to avoid accidental erasure and demagnetization problems. These new media employ longitudinally oriented assemblies of Ba-ferrite platelet-shaped particles. Under certain conditions cards made with such media exhibit asymmetries in the forward/reverse waveforms which can cause decoding errors, particularly when read with a commercial swipe reader using integration decode electronic. We found that a systematic tilt of the easy axes of the particles away from the longitudinal direction can cause forward/reverse read waveform asymmetry. Furthermore, large waveform distortions can result from the perpendicular magnetization component in poorly oriented media.     

色貌模型的人工神经网络方法的研究

色貌模型(CAM)主要解决不同观察条件、不同背景和不同环境下的颜色真实再现问题。采用人工神经网络(ANN)的方法来实现目前最新的色貌模型CIECAM02的预测,包括正向预测(从色度参数到色貌属性参数)和逆向预测(从色貌属性参数到色度参数),应用自然色系统(NCS)中的部分色样作为神经网络的训练和测试样本。由于正向输出色貌属性参数空间不是均匀的,对于网络预测精度用特殊方法评估,而对于逆向模型则可直接利用LAB色差公式评价。测试的结果表明:用神经网络对CIECAM02模型的预测达到了较高的精度。