Magneto-optic spectrum and electronic structure of single-crystal MnBi

Single crystals of MnBi were used for magneto-optic Kerr-angle spectroscopy and photoelectron spectroscopy. The Kerr-angle peak at 3.35 eV was observed for our nearly oxygen-free bulk samples, but the role of the oxide overlayer, demonstrated by Auger spectroscopy, as a possible origin of this peak cannot fully be assessed. The energy bands from photoelectron spectroscopy were in general agreement with calculated band structures, but were not extensive enough, due to sample cleavage properties, to distinguish reliably between band-structure calculations that disagree.     

等离子体增强化学气相沉积法制备含氢类金刚石膜的紫外Raman光谱和X射线光电子能谱研究

利用脉冲辉光放电的方法,在硅片上采用不同的沉积工艺制备了含氢类金刚石膜层,并采用Raman光谱和X射线光电子能谱(XPS)对膜层进行表征.用Raman光谱仪在波长为325 nm的紫外光源的激励下观察膜层的键结构.紫外Raman光谱对含氢类金刚石膜是非常有用的,它能有效避免可见光Raman光谱测量时的荧光干扰,清晰地得到膜层的D峰和G峰.同时利用XPS分析得到膜层的sp3键含量,并与Raman光谱所得数据进行比较.通过Raman光谱和XPS分析可以发现,在紫外光源的激励下,膜层的G峰峰位向高频移方向移动,G峰峰位、I(D)/I(G),G峰半高宽和sp3键含量之间存在一定的关系.     

Classical ultraviolet photoelectron spectroscopy of polymers

Although X-ray photoelectron spectroscopy of polymers was well established by Clark and coworkers in the 1970s, ultraviolet photoelectron spectroscopy of polymer films, was developed later. Previous to the 1970s, the first attempts to use ultraviolet light on polymer films took the form of appearance potential (valence band edge) measurements. Only some years later could the full valence band region of thin polymer films, including insulating polymers, semiconducting polymers and electrically conducting polymers. The development of what might be termed “classical ultraviolet photoelectron spectroscopy” of polymer films may be loosely based upon a variety of issues, including adapting thin polymer film technology to ultra high vacuum studies, the widespread use of helium resonance lamps for studies of solid surfaces, the combined advent of practical and sufficient theoretical–computational methods. The advent of, and the use of, easily available synchrotron radiation for multi-photon spectroscopies, nominally in the area of the near UV, is not included in the term “classical”. At the same time, electrically conducting polymers were discovered, leading to applications of the corresponding semiconducting polymers, which added technologically driven emphasis to this development of ultraviolet photoelectron spectroscopy for polymer materials. This paper traces a limited number of highlights in the evolution of ultraviolet photoelectron spectroscopy of polymers, from the 1970s through to 2008. Also, since this issue is dedicated to Prof. Kazuhiko Seki, who has been a friend and competitor for over two decades, the author relies on some of Prof. Seki's earlier research, unpublished, on who-did-what-first. Prof. Seki's own contributions to the field, however, are discussed in other articles in this issue.     

5f-electron localization in PuSe and PuSb

Thin layers of PuSb and PuSe were studied by photoelectron spectroscopy. X-ray photoelectron spectroscopy and high-resolution valence-band ultraviolet photoelectron spectroscopy spectra show localization of the 5f states and a low density of states at E(F) in PuSb. In PuSe, which can be classified as a heavy fermion system with low carrier density, we observed three narrow peaks in the valence band, which can be related to the 5f emission. These three features are very sensitive to stoichiometry deviations and disappear for PuSe prepared at T = 77 K.     

Temperature induced effects in the coadsorption system: CO/D2/Ni(100)

The temperature dependent changes in the CO/D/Ni(100) system have been examined using thermal desorption spectroscopy, work function change measurements, ultra-violet photoelectron spectroscopy and X-ray photoelectron spectroscopy. Three forms of CO(a) have been found, one of which exists only in the intermediate temperature range of 130–215 K. This form is believed to be a CO(a) tilted with respect to the surface normal, with significant ONi interaction. In addition, a new interpretation of several UPS parameters measured for CO(a) is presented. It is proposed that for CO(a), the 5σ?1π separation is a probe of bonding geometry, the 4σ?1π separation reflects COCO repulsion, and the $\text{4σ}\text{5σ}$ intensity ratio reflects the NiCO bond strength.     

Development of laser photoelectron spectroscopy based on resonantly enhanced multiphoton ionization

This review article is mainly concerned with laser photoelectron spectroscopy based on REMPI (resonantly enhanced multiphoton ionization), consisting of two parts. One is associated with the measurement of photoelectron kinetic-energy distribution and the other is associated with the measurement of zero-kinetic-energy (ZEKE) photoelectrons in very high resolution. These two techniques are complementary to each other. During the last three decades, the author and co-workers have carried out photoelectron spectroscopic studies of molecules in the gas phase, using the HeI 584 Å resonance line and a nanosecond tunable UV–visible laser. In this article, firstly the author’s background in the field of molecular photoelectron spectroscopy is described briefly, by mentioning three topics of HeI photoelectron spectroscopy. Secondly, the principle and characteristics of laser photoelectron kinetic-energy spectroscopy and its application to several typical topics, namely, one-photon forbidden states (O₂), autoionization from a super-excited state (NO), and small van der Waals molecules (NO–Ar and the NO₂ dimer), and some others. Thirdly, the principle and characteristics of ZEKE photoelectron spectroscopy are described, together with its application to the following several topics: (1) rotational spectra of NO⁺, (2) vibrational coupling of (naphthalene)⁺, (3) large-amplitude torsional motion of (tolane)⁺, (4) rotational isomers of (cis and trans n-propylbenzene)⁺ and structural isomers of (2-hydroxypyridine)⁺, (5) proton tunneling of (tropolone)⁺ and (9-hydroxyphenalenone)⁺, (6) intramolecular vibrational redistribution of trans stilbene, and (7) cation van der Waals molecules of aniline–Ar_n (n=1,2) and azulene–Ar. All the results mentioned as examples are those obtained in the author’s laboratory.     

Soft X-ray photoelectron spectroscopy of compound semiconductor surfaces and interfaces

Photoelectron spectroscopy is one of the leading techniques in the study of solid surfaces. In particular, X-ray photoelectron spectroscopy (XPS) — also known as ESCA (electron spectroscopy for chemical analysis) — is extensively used in materials science. This paper discusses the advantages of coupling the soft X-ray continuum of synchrotron radiation with this technique (SXPS). The primary advantage of high surface sensitivity is illustrated with case studies of clean semiconductor surfaces and of the initial stages of formation of metal/semiconductor and semiconductor/semiconductor interfaces. The prospects for soft X-ray photoelectron microscopy are briefly discussed.     

Electron spectroscopic study of the iron surface and its interaction with oxygen and nitrogen

The interaction of oxygen and nitrogen with a clean polycrystalline iron surface was investigated using Auger electron spectroscopy, photoelectron spectroscopy and electron energy loss spectroscopy. Further evidence for the dissociative nature of adsorbed nitrogen on iron is shown by the photoelectron spectroscopy data in conjunction with preliminary thermal desorption work. The first electron energy loss data for the nitrided iron surface is presented and shown to be very similar to that for the clean and oxidized surfaces.     

Adsorption of silicon atoms on the surface of the Au/W(110)

The possibility of formation of an ordered silicene-like structure on Au/W(110) surface has been considered using angle-resolved photoelectron spectroscopy and X-ray photoelectron spectroscopy. It is shown that the addition of silicon atoms results in a considerable distortion of the electron structure of the initial substrate, and the resulting electron structure cannot be attributed to silicene. The configuration of reflections in the low energy electron diffraction pattern indicates the formation of two-dimensional ordered silicon structures with a large number of multidirectional domains.

     

共振条件下载波包络相位效应对阈上电离谱的影响

本文通过求解三维含时薛定谔方程, 从理论上研究了共振条件下氢原子的光电子能谱与角分布随着激光脉冲载波包络相位(CEP)的变化规律. 研究结果表明: 在共振位置附近, 光电子能谱的强度与CEP有强烈的依赖关系; 进一步对各个分波的分析, 可以确定共振电离初态的角量子数. 此外, 利用光电子的角分布信息, 可以对多周期激光脉冲的初始相位信息进行高精度探测. 关键词： 阈上电离 超短脉冲 载波包络相位     

Spectroscopic analysis of CIGS2/CdS thin film solar cell heterojunctions on stainless steel foil

This paper presents a spectroscopic analysis of the interface between a CuIn_1−xGa_xS₂ (CIGS2) absorber and a CdS buffer layer on stainless steel foil by Auger electron spectroscopy (AES), inverse photoemission spectroscopy (IPES) and photoelectron spectroscopy (PES) such as X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). By combining these spectroscopic techniques, detailed information about the electronic and chemical properties of the CIGS2 surface and the CdS/CIGS2 interface can be obtained. The gallium concentration in CIGS2 films was found to increase continuously towards the Mo back contact. XPS analysis showed the presence of KCO₃ on the surface of CdS, deposited on etched and un-oxidized samples indicating diffusion of potassium. No potassium was observed on oxidized as well as samples having thicker CdS (50 nm) indicating the effectiveness of oxidation and chemical bath deposition (CBD) process in cleaning the sample surface effectively. In addition, investigation of the electronic level alignment at the interface has been carried out by combining PES and IPES. Conduction band offset of −0.45 (±0.15) eV and a valence band offset of −1.06 (±0.15) eV were measured. These unfavorable conditions limit efficiency of CIGS2 thin film solar cells.     

Electronic structure of cerium heavy-fermion systems

A number of cerium-based systems are investigated using x-ray photoelectron spectroscopy. It is revealed that there is a correlation between the parameters of the x-ray photoelectron spectra and the heavy-fermion state. This correlation makes it possible to investigate the relaxation processes, anomalously strong reorganization of orbitals, profound collective effects induced by a vacancy field, and hybridization of localized unoccupied f states with delocalized occupied states.     

Effect of Ca interlayer thickness on electron injection of lithium quinolate/Ca/Al cathodes

Electron injection behavior of lithium quinolate (Liq)/Ca/Al cathode was investigated by using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS). Interfacial energy barrier lowering of Liq/Ca/Al cathode was dependent on Ca thickness and maximum energy level shift was observed at a Ca thickness of 1 nm. Maximum current density could be obtained in Liq/Ca/Al device at a Ca thickness of 1 nm and it was well correlated with energy level shift from UPS measurement. Power efficiency of Liq/Al device could be improved by more than 70% by inserting Ca layer between Liq and Al.     

Photoelectron spectroscopy of doped helium nanodroplets

The photoionization dynamics of aniline doped helium droplets has been investigated by photoelectron spectroscopy. The photoelectron spectra resemble closely that of gas phase aniline, except for a droplet-size-dependent shift. This shift is caused by lowering of the ionization threshold upon solvation and can be readily estimated. The individual peaks in the photoelectron spectrum are broadened towards lower kinetic energy which is attributed to the relaxation of the photoelectrons as they pass through the helium droplet.     

Ultrathin film growth and spectroscopic characterization of VOx (0.8x1.3) on Pt(1 1 1)

VO_x ultrathin epitaxial films (0.8x1.3) have been grown on Pt(1 1 1) by evaporating vanadium in a low and well-controlled water background (1×10⁻⁷ Pa). X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and X-ray excited auger electron spectroscopy data strongly indicate that vanadium(II) in the predominant oxidation state. Angle-scanned photoelectron diffraction data are compatible with a single domain film, bearing a rock-salt VO structure and exposing the (1 1 1) plane. Such films evolve toward more oxidized species within hours, probably due to oxidation by residual water in the chamber.     

Satellite lines in photoelectron spectra

A general theoretical framework is presented for treating satellite line intensities in photoelectron spectra. It is shown that aside from multiplet structure characteristic of open shell systems, satellite lines involve a breakdown of the one-electron or single particle approximation. For any choice of independent electron basis states, this breakdown can be in the form of initial state configuration interaction, final ionic state configuration interaction, or interchannel coupling (configuration interaction) among the various possible photoionization channels (ion plus photoelectron system). This last effect has not been discussed in connection with photoelectron spectroscopy but its consequences can be extremely important.     

Sn interaction with the CeO2(1 1 1) system: Bimetallic bonding and ceria reduction

A tin layer 0.8 nm thick was deposited onto the CeO₂(1 1 1) surface by molecular beam deposition at a temperature of 520 K. The interaction of tin with cerium oxide (ceria) was investigated by X-ray photoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (UPS) and resonant photoelectron spectroscopy (RPES). The strong tin-ceria interaction led to the formation of a homogeneous bulk Ce-Sn-O mixed oxide system. The bulk compound formation is accompanied by partial Ce⁴⁺ → Ce³⁺ reduction, observed as a giant 4f resonance enhancement of the Ce³⁺ species. CeO₂ and SnO₂ oxides were formed after oxygen treatment at 520 K. The study proved the existence of strong Ce-Sn interaction and charge transfer from Sn to the Ce-O complex that lead to a weakening of the cerium-oxygen bond, and consequently, to the formation of oxygen deficient active sites on the ceria surface. This behavior can be a key for understanding the higher catalytic activity of the SnO_x/CeO_x mixed oxide catalysts as compared with the individual pure oxides.     

磁瓶式光电子能谱和速度成像光电子能谱对APS-(A=C14H10,蒽)的研究:电子结构,APS·的自旋轨道耦合和APS-的自旋偶极态

Gaseous dibenzo-7-phosphanorbornadiene P-sulfide anions APS^-(A=C₁₄H₁₀ or anthracene) were generated via electrospray ionization, and characterized by magnetic-bottle photoelectron spectroscopy, velocity-map imaging (VMI) photoelectron spectroscopy, and quantum chemical calculations. The electron affinity (EA) and spin-orbit (SO) splitting of the APS^· radical are determined from the photoelectron spectra and Franck-Condon factor simulations to be EA=(2.62±0.05) eV and SO splitting=(43±7) meV. VMI photoelectron images show strong and sharp peaks near the detachment threshold with an identical electron kinetic energy (eKE) of 17.9 meV at three different detachment wavelengths, which are therefore assigned to autodetachment from dipole-bound anion states. The B3LYP/6-31++G(d,p) calculations indicate APS^· has a dipole moment of 3.31 Debye, large enough to support a dipole-bound electron.     

Pitfalls in measuring work function using photoelectron spectroscopy

Accurate measurement of work function is essential in many areas of research and development. Despite the importance of photoelectron spectroscopy as a technique for measuring work function, there has been relatively little discussion in the literature of how to conduct accurate measurements. We review the basic technique of measuring work function using ultraviolet photoelectron spectroscopy and discuss several common sources of error related to the experimental setup. In particular, the sample-detector geometry is found to be a key experimental parameter; accurate results are only obtained when the sample is perpendicular to the electron detector. In addition, we demonstrate that photoelectron work function values correspond to the minimum work function “patch” on a non-uniform surface, in contrast to the average work function measured by other techniques, such as the Kelvin probe method.     

原子激发态在高频强激光作用下的光电离研究

本文通过数值求解动量空间的三维含时薛定谔方程, 研究了原子高激发态在高频激光脉冲作用下, 在电离阈值附近的光电子能谱和两维动量角分布. 研究结果表明: 在该能量范围内, 单光子电离过程的贡献是最主要的. 体系初态的主量子数可以由光电子能谱峰值的位置来确定; 体系初态的角量子数可以通过光电子的两维动量角度分布确定. 在比较宽泛的参数范围内, 这一规律不随入射激光的强度和脉冲时间宽度的改变而改变, 因此原则上可以利用它对原子的初态进行识别. 此外, 还研究了体系的初态为相干叠加态, 光电子动量谱随着叠加态相对相位的变化规律. 关键词： 阈上电离 激发态 高频激光脉冲 两维动量角度分布