Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies

The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.     

Interaction of cesium with charged oxide under UV irradiation imaged by photoemission electron microscopy

We report the first observation of electron transfer from charged SiO₂/Si(1 0 0) by ion-implantation via internal photoemission from Si by photoemission electron microscopy (PEEM) for the purpose of the microscopic control of promotion of catalyst by electron transfer from oxide support. The contrast of the PEEM image varies with the amount and kind of the implanted ion and the deposition of Cs through the formation of electrical double layer consisting of Cs⁺ and trapped electrons at trapping centers created by the implantation. It is then firmly established that oxide charging can be microscopically tuned by ion-implantation.     

Real space observation of current-induced magnetic domain wall displacement in Co/Ni nano-wire by photoemission electron microscopy

Current-induced magnetic domain wall (DW) displacement in a Co/Ni nano-wire with perpendicular magnetic anisotropy was investigated in real space by photoemission electron microscopy (PEEM) for the first time. DW velocity determined from the PEEM observation was 40?m?s(-1) for the current density of 2.5?×?10(12)?A?m(-2), which was consistent with the result obtained by the electrical measurement used in our previous reports.     

Recent advances in imaging of properties and growth of low dimensional structures for photonics and electronics by XPEEM

Spectroscopic Photoemission and Low Energy Electron Microscopy (SPELEEM) is a very powerful and diverse microscopy technique for the investigation of surfaces, interfaces, buried layers and nanoscale objects like nanoparticles and nanowires. The many significant results from photoemission Electron microscopy (PEEM) in recent years are linked with the exploitation of advanced light sources such as synchrotrons and new advanced laser systems. Combined also with low energy electron microscopy (LEEM) it allows a complementary chemical and structural analysis making LEEM/PEEM a versatile multitechnique instrument. To illustrate the extreme diversity, we give a summary of the recent studies with the SPELEEM installed at the soft X-ray beamline I311 at the MAXII synchrotron storage ring and a portable electrostatic PEEM used with ultra-fast XUV laser technology. The examples cover topics such as full-cone 3D band mapping by using the photoelectron diffraction mode of the microscope, growth mechanism and detailed doping profile of III–V nanowires, growth and intercalation of graphene on SiC substrates, droplet dynamics on GaP(1 1 1) surface, surface chemistry and control of nanostructure fabrication. Moreover, the first results of PEEM experiments using extreme ultraviolet attosecond pulse trains are discussed.     

Improvement of femtosecond SPPs imaging by two-color laser photoemission electron microscopy

Clear imaging of surface plasmon polaritons (SPPs) is a prerequisite for SPPs-based applications. In this work, we demonstrate an improvement of near-field imaging of SPPs via directly comparing the visibility of the photoemission electron microscopy (PEEM) image of SPPs under one- and two-color laser excitation (also known as one- or two-color laser PEEM). By measuring the photoelectron yield and the contrast of the interference fringes of SPPs, we demonstrate that in addition to enhancing the photoemission yield, two-color laser PEEM can significantly improve the contrast between bright and dark fringes (nearly 4 times higher than that of one-color laser case). By recording the nonlinear order of the photoelectrons ejected from the bright and dark fringes, respectively, the underlying mechanism for the improved visibility is revealed. In addition, the influences of the polarization direction of 400-nm laser on the PEEM images of the SPPs with different wave vector directions are shown. These results can provide technical support for the development of SPPs-based communication devices and catalysis.     

Laser induced threshold photoemission magnetic circular dichroism and its application to photoelectron microscope

This work enlightens the threshold photoemission magnetic circular dichroism (MCD) and its adaption on photoemission electron microscopy (PEEM) using lasers. MCD is a simple and efficient way to investigate magnetic properties since it does not need any spin analyzers with low efficiency, and thus the MCD related techniques have developed to observe magnetic domains. Usually, MCD in a total yield measurement in the valence band with weak spin–orbit coupling (SOC) excited by low photon energy (hν≤ 6 eV) does not compete with the X-ray magnetic circular dichroism (XMCD) with strong SOC. XMCD PEEM observation of magnetic domains has been successfully established while MCD PEEM derived from valence bands has not been. However, using angle and energy resolved photoelectron, valence band MCD provides large asymmetry similar to that by XMCD. Threshold measurement of photoelectron in a total electron yield procedure can take advantage of the measurement of photoelectrons with a limited angle and energy mode. This restriction of the photoelectron makes the threshold MCD technique an efficient way to get magnetic information and gives more than 10% asymmetry for Ni/Cu(0 0 1), which is comparable to that obtained by angle resolved photoemission. Thus the threshold MCD technique is a suitable method to observe magnetic domains by PEEM. For threshold MCD, incident angle dependence and high sensitivity to out-of-plane magnetized films compared with in-plane ones are discussed. Ultrashort pulse lasers make it feasible to measure two photon photoemission MCD combined with PEEM, where resonant excitation has a possibility to enhance dichroic asymmetry. Recent results for valence band magnetic dichroism PEEM are presented.     

Initial oxidation of Ni(1 1 1) observed by electron emission microscopy: PEEM and MEEM

The initial oxidation of Ni(1 1 1) in the temperature range of 550-700 K has been monitored by photoelectron emission microscopy (PEEM) and metastable-atom electron emission microscopy (MEEM). The PEEM and MEEM images show uniform patterns for the chemisorbed overlayer, reflecting the electronic homogeneity as seen at the μm scale. During the nucleation and lateral growth of oxide, however, the μm-scale pattern due to the formation of oxide domains appears and its evolution depends strongly on the substrate temperature and dose pressure of gaseous O₂. Our data indicate that the high-temperature oxidation is regarded as a successive multi-nucleation process in a reaction-diffusion field.     

Mapping the local reaction kinetics by PEEM: CO oxidation on individual (100)-type grains of Pt foil

The locally-resolved reaction kinetics of CO oxidation on individual (100)-type grains of a polycrystalline Pt foil was monitored in situ using photoemission electron microscopy (PEEM). Reaction-induced surface morphology changes were studied by optical differential interference contrast microscopy and atomic force microscopy (AFM). Regions of high catalytic activity, low activity and bistability in a (p,T)-parameter space were determined, allowing to establish a local kinetic phase diagram for CO oxidation on (100) facets of Pt foil. PEEM observations of the reaction front propagation on Pt(100) domains reveal a high degree of propagation anisotropy both for oxygen and CO fronts on the apparently isotropic Pt(100) surface. The anisotropy vanishes for oxygen fronts at temperatures above 465?K, but is maintained for CO fronts at all temperatures studied, i.e. in the range of 417 to 513?K. A change in the front propagation mechanism is proposed to explain the observed effects.     

Exploring the magnetic and organic microstructures with photoemission electron microscope

We present photoemission electron microscopy (PEEM) studies on geometrically constrained ferromagnetic, organic, and organics–ferromagnet hybrid structures. Powered by an elliptically polarized undulator, the PEEM at Taiwan Light Source (TLS) is capable of recording polarization enhanced X-ray images and has been employed to examine the domain configurations in a lithographically patterned permalloy film as well as the orientations of pentacene molecules adsorbed on self-assembled monolayers (SAMs) modified gold surfaces. In addition, magnetic images acquired on cobalt/pentacene and pentacene/cobalt bilayers reveal that in hybrid structures the order of thin film deposition can lead to distinct domain configurations. Spectroscopic evidence further suggests that there is significant orbital hybridization at the interface where metallic cobalt was deposited directly on organic pentacene.     

Anti-ferromagnetic contrast in NiO (0 0 1) studied with threshold photoemission electron microscopy

 A detailed study is presented of the potential of threshold photoemission electron microscopy (PEEM) for the imaging of anti-ferromagnetic (AF) domains of NiO (0 0 1). Characteristic patterns with large asymmetry have been observed experimentally. Upon heating the sample to temperatures significantly above the Néel temperature, the patterns clearly remain visible and a magnetic origin can therefore be excluded. The patterns probably originate in polishing damage, with the bright areas corresponding to areas with a high oxygen deficiency (with enhanced electron emission). After sputter cleaning the sample, thereby removing the dominant patterns, no significant asymmetries in electron emission remain. Obviously, for our samples the AF asymmetries as measured with threshold PEEM are less than the detection limits of our setup of 0.5%. The conclusion is supported by model calculations, which show that the asymmetry should have a distinct angular dependence and which give an estimate of the maximum asymmetry of below 1%.     

Femtosecond spectroscopic imaging by time-of-flight photoemission electron microscopy

Advances in electron optics and fast-pulsed light sources have enabled the imaging of nanoscale structures with simultaneous energy and time resolutions. We present the results obtained from a time-resolved time-of-flight photoemission electron microscopy (TR-TOF-PEEM) system. This system combined the spatial resolution of conventional PEEM with the time resolution of a femtosecond-pulsed laser and the energy resolution of a TOF energy analyzer. The TOF-PEEM system consists of three electrostatic lenses in front, a drift tube for the measurement of TOF, and a delay line detector (DLD) at the end of the optics. The excitation source is femtosecond pulses from a cavity-dumped Ti:sapphire oscillator that is frequency-doubled to 400 nm using a β-barium borate (BBO) crystal. Using a pump-probe two-photon photoemission technique, we demonstrate an example of sub-100 nm space-resolved ultrafast time evolution of the electron energy spectra for the plasmon resonance of an Ag-coated Si nanostructure, which exhibited unexpectedly intense high energy photoemission signals that show different time evolution between bright and dark regions in a PEEM image.     

Phase propagation of localized surface plasmons probed by time-resolved photoemission electron microscopy

In combining time-resolved two-photon photoemission (TR-2PPE) and photoemission electron microscopy (PEEM) the ultra-fast dynamics of collective electron excitations in silver nanoparticles (localized surface plasmons – LSPs) is probed at fs and nm resolution. Here we demonstrate that the sampling of the LSP dynamics by means of time-resolved PEEM enables detailed insight into the propagation processes associated with these excitations. In phase-integrated as well as phase-resolved measurements we observe spatio-temporal modulations in the photoemission yield from a single nanoparticle. These modulations are assigned to local variations in the electric near field as a result of the phase propagation of a plasmonic excitation through the particle. Furthermore, the control of the phase between the fs pump and probe laser pulses used for these experiments can be utilized for an external manipulation of the nanoscale electric near-field distribution at these particles. PACS 78.47.+p; 78.67.Bf; 79.60.-i; 73.20.Mf     

Surface and interface of Ti(film)/SiC(substrate) system: a soft X-ray emission and photoemission electron microscopy study

We have conducted a soft X-ray emission spectroscopy (SXES) and a photoemission electron microscopy (PEEM) study on the heat-treated Ti/4H–SiC system. This spectro-microscopy approach is an ideal surface and interface characterization techniques due to the non-destructive nature of SXES and the real-time surface imaging of PEEM.

The Si L_2,3 and C K soft X-ray emission spectra, which reflect Si (s+d) states and C p states, respectively, revealed formations of Ti₅Si₃ and TiC in the reacted interfacial region of Ti (50 nm)/4H–SiC(0 0 0 1) sample.

The surface of the Ti films on 4H–SiC samples during heat-treatment up to 850 °C was investigated by PEEM. The variation in brightness in the image of the sample was attributed to the surface deoxidation in the early stage of the treatment and to the formation of reacted region at the later stage. The darkening of the surface could be attributed to the formation of TiC and/or excess C atoms that could have migrated to the surface.     

Low energy electron microscopy and photoemission electron microscopy investigation of graphene

Low energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) are two powerful techniques for the investigation of surfaces, thin films and surface supported nanostructures. In this review, we examine the contributions of these microscopy techniques to our understanding of graphene in recent years. These contributions have been made in studies of graphene on various metal and SiC surfaces and free-standing graphene. We discuss how the real-time imaging capability of LEEM facilitates a deeper understanding of the mechanisms of dynamic processes, such as growth and intercalation. Numerous examples also demonstrate how imaging and the various available complementary measurement capabilities, such as selected area or micro low energy electron diffraction (μLEED) and micro angle resolved photoelectron spectroscopy (μARPES), allow the investigation of local properties in spatially inhomogeneous graphene samples.     

Photoemission electron microscopy study of anthracene growth on Si(1 1 1)

The thin film growth of anthracene films on Si(1 1 1) surfaces is studied by photoemission electron microscopy (PEEM). The thin film growth of anthracene on Si(1 1 1) is similar to the growth of pentacene on silicon. Initially a layer of flat lying molecules chemisorbs on the surface. Subsequent growth of fractal islands with standing up molecules proceeds on top of this flat layer.     

Subsurface oxygen formation on the Pt(110) surface: experiment and mathematical modeling

Experiments using photo emission electron microscopy (PEEM) reveal that regions on a Pt(110) surface covered by chemisorbed O atoms may be converted into a subsurface O-phase, provided that it is preceded by the interaction of CO initiating the 1 × 2 → 1 × 1 transformation of the surface structure. However, the presence of subsurface oxygen also favors lifting of the surface reconstruction. A mathematical model of this process is developed using parameters derived from previous independent experiments and numerical simulations fitting new data to experimental findings.     

The EIGER detector for low‐energy electron microscopy and photoemission electron microscopy

EIGER is a single‐photon‐counting hybrid pixel detector developed at the Paul Scherrer Institut, Switzerland. It is designed for applications at synchrotron light sources with photon energies above 5 keV. Features of EIGER include a small pixel size (75 µm × 75 µm), a high frame rate (up to 23 kHz), a small dead‐time between frames (down to 3 µs) and a dynamic range up to 32‐bit. In this article, the use of EIGER as a detector for electrons in low‐energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) is reported. It is demonstrated that, with only a minimal modification to the sensitive part of the detector, EIGER is able to detect electrons emitted or reflected by the sample and accelerated to 8–20 keV. The imaging capabilities are shown to be superior to the standard microchannel plate detector for these types of applications. This is due to the much higher signal‐to‐noise ratio, better homogeneity and improved dynamic range. In addition, the operation of the EIGER detector is not affected by radiation damage from electrons in the present energy range and guarantees more stable performance over time. To benchmark the detector capabilities, LEEM experiments are performed on selected surfaces and the magnetic and electronic properties of individual iron nanoparticles with sizes ranging from 8 to 22 nm are detected using the PEEM endstation at the Surface/Interface Microscopy (SIM) beamline of the Swiss Light Source.     

Imaging Ultrafast Plasmon Dynamics within a Complex Dolmen Nanostructure Using Photoemission Electron Microscopy

We report direct nanoscale imaging of ultrafast plasmon in a gold dolmen nanostructure excited with the 7fs laser pulses by combining the interferometric time-resolved technology with the three-photon photoemission electron microscopy(PEEM).The interferometric time-resolved traces show that the plasmon mode beating pattern appears at the ends of the dimer slabs in the dolmen nanostructure as a result of coherent superposition of multiple localized surface plasmon modes induced by broad bandwidth of the ultrafast laser pulses.The PEEM measurement further discloses that in-phase of the oscillation field of two neighbor defects are surprisingly observed,which is attributed to the plasmon coupling between them.Furthermore,the control of the temporal delay between the pump and probe laser pluses could be utilized for manipulation of the near-field distribution.These findings deepen our understanding of ultrafast plasmon dynamics in a complex nanosystem.     

基于深紫外激光-光发射电子显微技术的高分辨率磁畴成像

基于磁二色效应的光发射电子显微镜磁成像技术是研究薄膜磁畴结构的一种重要研究手段,具有空间分辨率高、可实时成像以及对表面信息敏感等优点.以全固态深紫外激光(波长为177.3 nm;能量为7.0 eV)为激发光源的光发射电子显微技术相比于传统的光发射电子显微镜磁成像技术(以同步辐射光源或汞灯为激发源),摆脱了大型同步辐射光源的限制;同时又解决了当前阈激发研究中由于激发光源能量低难以实现光电子直接激发的技术难题,在实验室条件下实现了高分辨磁成像.本文首先对最新搭建的深紫外激光-光发射电子显微镜系统做了简单介绍.然后结合超高真空分子束外延薄膜沉积技术,成功实现了L10-FePt垂直磁各向异性薄膜的磁畴观测,其空间分辨率高达43.2 nm,与利用X射线作为激发源的光发射电子显微镜磁成像技术处于同一量级,为后续开展高分辨磁成像提供了便利.最后,重点介绍了在该磁成像技术方面取得的一些最新研究成果:通过引入Cr的纳米"台阶",成功设计出FePt的(001)与(111)双取向外延薄膜;并在"台阶"区域使用线偏振态深紫外激光观测到了磁线二色衬度,其强度为圆二色衬度的4.6倍.上述研究结果表明:深紫外激光-光发射电子显微镜磁成像技术在磁性薄膜/多层膜体系磁畴观测方面具备了出色的分辨能力,通过超高真空系统与分子束外延薄膜制备系统相连接,可以实现高质量单晶外延薄膜制备、超高真空原位传输和高分辨磁畴成像三位一体的功能,为未来磁性薄膜材料的研究提供了重要手段.     

Estimation of diffusion coefficient by photoemission electron microscopy in ion-implanted nanostructures

We have fabricated parallel stripes of nanostructures in an n-type Si substrate by implanting 30 keV Ga⁺ ions from a focused ion beam (FIB) source. Two sets of implantation were carried out. In one case, during implantation the substrate was held at room temperature and in the other case at 400 °C. Photoemission electron microscopy (PEEM) was carried out on these samples. The implanted parallel stripes, each with a nominal dimension of 4000 nm × 100 nm, appear as bright regions in the PEEM image. Line scans of the intensities from the PEEM image were recorded along and across these stripes. The intensity profile at the edges of a line scan is broader for the implantation carried out at 400 °C compared to room temperature. From the analysis of this intensity profile, the lateral diffusion coefficient of Ga in silicon was estimated assuming that the PEEM intensity is proportional to Ga concentration. The diffusion coefficient at 400 °C has been estimated to be ∼1.3 × 10⁻¹⁵ m²/s. Across the stripes an asymmetric diffusion profile has been observed, which has been related to the sequence of implantation of these stripes and the associated defect distribution due to lateral straggling of the implanted ions.