玻璃掺杂量子点的倍频效应产生的理论研究

应用统计理论和量子力学理论对量子点掺杂的倍频效应产生的机制与量子点倍频光的电极化率与量子点的尺寸大小的关系进行了理论研究，结果较好地解释了实验所观察到的规律。     

半导体掺杂玻璃的微晶结构及超快弛豫过程

透射电子显微镜(TEM)研究了CdS_0.3,Se_0.7掺杂的半导体微晶玻璃的微晶尺寸分布,微晶尺寸由热处理温度和时间来控制。当微晶尺寸接近或小于激子Bohr半径时,吸收光谱出现亚带结构,带隙能向高能移动,证明了量子尺寸效应。非相干光时间延迟的四波混频(TDFWM-IL)技术测试研究了玻璃的快速弛豫过程。     

分子束外延生长Sb薄膜及其量子尺寸效应

在GaAs(001)衬底上，用分子束外延生长Sb(111)薄膜，用反射式高能电子衍射仪原位监控生长过程，用透射电子显微镜观察薄膜结构，并用van der Pauw方法测量了电阻率随生长温度的变化，观察到Sb薄膜半金属/半导体转变及其量子尺寸效应． 关键词：     

金属薄膜表面化学反应活性中的量子尺寸效应

本文首先简要介绍了金属薄膜的量子尺寸效应及其对表面化学性质的影响,然后对Pb/Si体系量子尺寸效应的近期研究进行了综述,最后详细介绍了量子效应对表面化学反应活性的影响。扫描隧道显微镜观察表明:在Pb(111)单晶薄膜表面上的分子吸附和氧化反应随着薄膜厚度一个原子层一个原子层变化时会出现振荡现象。通过研究薄膜中量子阱态的形成、费米能级处电子态密度的变化与薄膜的表面反应活性之间的关系,我们从实验上直接定量地证明了量子尺寸效应对表面反应活性的调控作用。     

基于量子尺寸效应的纳米内包层光纤放大性研究

本文利用改进的化学汽相沉积法制作出纳米级InP薄膜内包层光纤;根据氢原子本征能量模型计算了InP微粒产生量子尺寸效应的相对粒径aB=8.313nm,且由量子尺寸效应计算了不同尺寸粒子的带隙能量以及相对应的光吸收波长;结果表明：当内包层薄膜材料厚度达5－50nm量级时,其能级将发生红移,产生放大性能.     

基于量子尺寸效应的InP纳米内包层光纤研制及放大性

利用改进的化学气相沉积法制作出纳米级InP薄膜内包层光纤;根据氢原子本征能量模型计算了InP微粒产生量子尺寸效应的相对粒径a_B=8313 nm,且由量子尺寸效应计算了不同尺寸粒子的带隙能量以及相对应的光吸收波长;由测试工作系统测试,在906—1044 nm,1080—1491 nm,1524—1596 nm 波段上均有增益;结果表明：当内包层薄膜材料厚度达5—50nm量级时,其能级将发生红移,产生放大性能. 关键词： 纳米包层光纤 量子尺寸效应 光放大     

金属薄膜表面化学反应活性中的量子尺寸效应

本文首先简要介绍了金属薄膜的量子尺寸效应及其对表面化学性质的影响,然后对Pb/si体系量子尺寸效应的近期研究进行了综述,最后详细介绍了量子效应对表面化学反应活性的影响.扫描隧道显微镜观察表明:在Pb(111)单晶薄膜表面卜的分子吸附和氧化反应随着薄膜厚度一个原子层一个原子层变化时会出现振荡现象.通过研究薄膜中量子阱态的形成、费米能级处电子态密度的变化与薄膜的表面反应活性之间的关系,我们从实验上直接定量地证明了最子尺寸效应对表面反应活性的调控作用.     

溶胶—凝胶法制备CdS微晶掺杂TiO2／SiO2薄膜及其非线性光学特性

采用溶胶－凝胶方法在普通的载玻片上制备了ＣｄＳ微晶掺杂的ＴｉＯ２／ＳｉＯ２复合薄膜。用正硅酸乙酯、钛酸丁酯、醋酸镉作原料，比较了两种硫化剂：硫尿和硫代乙酰氨的硫化作用。Ｘ射线衍射谱和拉曼光谱揭示了ＣｄＳ微晶镶嵌在ＴｉＯ２／ＳｉＯ２薄膜的玻璃网络中。不同热处理温度、不同热处理时间的吸收光谱表明薄膜中存在着量子尺寸效应。采用Ｚ扫描技术测量了薄膜的非线性吸收及非线性折射率ｎ２＝－４．６７×１０－７ｅｓｕ。     

Co／BaTiO3纳米复合薄膜的PLD法制备

纳米金属一陶瓷复合薄膜是纳米金属颗粒嵌埋在介质载体中形成的一种复合材料。在此体系中纳米金属的小尺寸效应、表面界面效应、量子尺寸效应、量子隧穿效应及陶瓷基体的高介电常数及介电强度，赋予此体系独特的光学特性。如高的三阶非线性光学极化率、超快的三阶非线性响应时间及高三阶非线性系数等，在电子器件和光学材料方面有着潜在的应用前景，引起了国内外学者的极大兴趣。     

退火对CdSe量子点荧光影响的色度学研究

制备出两种尺寸的CdSe量子点.结合色度学分析,比较了固化在PMMA基质中两种尺寸CdSe量子点在退火中发生的不同变化以及相应光谱颜色的改变.小尺寸CdSe量子点在退火中有团聚的趋势,退火后荧光明显红移,如果退火温度超过一定范围,会产生显著的双尺寸分布效应,对应的色度坐标有从白光区域向上移动到绿色区域的趋势.较大尺寸的CdSe量子点,其热稳定性相对更好,退火造成荧光红移,对应绿色区域中的色度坐标有向右移动的趋势,但颜色改变不明显,因此更适合于发光显示方面的应用.     

Thermo-optical response of layered Bi nanostructures produced by pulsed laser deposition

This work reports optical transmission changes in layered Bi nanostructures (NSs) upon heating-cooling cycles up to temperatures above the melting temperature. The nanostructured films prepared by pulsed laser deposition consist of Bi NSs with different characteristic sizes that are organised in layers and embedded in an amorphous Al₂O₃ host. The spectral dependence of the optical transmission as well as its changes upon heating are reported. The combination of Bi NSs layers with more than one characteristic size allows controlling the width of the melting-solidification transition. Eventually, it is shown how a multiple temperature thermo-optical film can be designed and prepared.     

含碳纳米颗粒凝胶玻璃的制备及其量子尺寸效应

以磷酸三乙酯、硝酸铝和正硅酸乙酯为原料,通过它们的不完全水解制备了含有有机基团的xAl₂O₃-xP₂O₅-100SiO₂(x=0.25—3)凝胶.在空气中在400℃或450℃或在氮气中从300到700℃对凝胶进行热处理,使凝胶中的有机基团炭化,从而得到含有碳纳米颗粒的xAl₂O₃-xP₂O₅-100SiO₂(x=0.25—2)凝胶玻璃.利用吸收光谱和TEM对含有碳纳米颗粒的凝胶玻璃进行了表征,结果发现随着碳纳米颗粒尺寸的减小吸收边向高能边移动,这种现象是由碳纳米颗粒中电子和空穴的量子限制效应引起的.电子衍射表明凝胶玻璃中的纳米碳为非晶碳. 关键词： 溶胶凝胶法 碳 纳米颗粒     

铌酸钇里Bi~(3+)敏化Tm~(3+)的近红外量子剪裁发光的浓度效应

寻找新能源为全球目前面临着的重要课题,其中最理想的新能源为太阳能。近红外量子剪裁发光方法可以把硅或锗太阳能电池响应不够灵敏的大能量光子成倍的转换成为太阳能电池响应灵敏的小能量光子,能够解决光谱失配的问题,较大幅度的提高太阳能电池的效率。很有意义。报道了掺Tm~(3+)Bi~(3+)的铌酸钇磷光粉样品材料的近红外量子剪裁发光的浓度效应。通过测量激发谱与发光谱,发现Tm_(0.058)Bi_(0.010)Y_(0.932)NbO_4有很强的1 820.0 nm近红外量子剪裁发光;进一步的分析发现,它们是由交叉能量传递过程导致的多光子量子剪裁发光;还发现了有着很强的Bi~(3+)对Tm~(3+)的敏化近红外量子剪裁发光,302.0 nm光激发导致的Tm_(0.058)Bi_(0.010)Y_(0.932)NbO_4相对Tm_(0.058)Y_(0.995)NbO_4的1820.0 nm近红外量子剪裁发光的增强达到175.5倍。该结果对探索多光子近红外量子剪裁锗太阳能电池比较有意义。     

Double layer a-Si:H/SiN:H deposited at low temperature for the passivation of N-type silicon

This work shows the influence of conditioning the Bi target previous to the pulsed laser deposition of Bi nanocomposite films on their optical and thermo-optical properties. The nanostructured films prepared by alternate pulsed laser deposition at room temperature in vacuum consist of Bi nanostructures (NSs) with different characteristic sizes that are organized in layers and embedded in an amorphous Al₂O₃ host. Preablation of the Bi target prior to deposition leads to higher Bi concentration and Bi NSs with larger average sizes. As a result a lower optical transmission and an enhanced thermo-optical contrast are observed.     

Quadrupole relaxation enhancement--application to molecular crystals

A general theory of field dependent spin-lattice relaxation for nuclei of the spin quantum number 1/2 (1H, 19F, 13C) caused by dipole-dipole interactions with neighboring quadrupolar nuclei (nuclei possessing a quadrupolar moment) is presented. The theory is valid for arbitrary motional conditions and should be treated as a quadrupolar counterpart of the paramagnetic relaxation enhancement theory. When the energy level splitting of the dipolar spin (I=1/2) matches one of the transition frequencies of the quadrupolar nuclei one can observe a local enhancement of the dipolar spin relaxation (referred to as "quadrupolar peaks"). To see such effects the dynamics modulating the spin interactions has to be relatively slow. This brings the system beyond the validity range of perturbation approaches and requires the stochastic Liouville equation to be applied. The presented theory describes the quadrupolar relaxation enhancement (QRE) for an arbitrary spin quantum number of the quadrupolar nuclei and includes the asymmetry of the quadrupolar coupling. It has been applied to interpret the shape of magnetization curves (amplitude of 1H magnetization versus magnetic field) for the molecular crystal [C3N2H5]6[Bi4Br18] ([C3N2H5]-imidazolium). The magnetization curves show several dips (local minima) attributed to 1H-14N quadrupolar relaxation enhancement effects. In addition, as a limiting case a perturbation approach to QRE has been presented and its validity conditions have been discussed.     

Optical vibration modes in (Cd,Pb, Zn)S quantum dots in the Langmuir-Blodgett matrix

The structures with CdS, PbS, and ZnS quantum dots produced using the Langmuir-Blodgett method are investigated by infrared (IR) spectroscopy, Raman scattering, and ultraviolet (UV) spectroscopy. The quantum dot size estimated from the UV spectra and high-resolution transmission electron microscopy (HRTEM) falls in the range 2–6 nm. The longitudinal optical (LO) phonons localized in quantum dots and the surface optical vibration modes are revealed in the IR reflection and Raman scattering spectra of the structures under investigation. The frequencies of the surface optical modes are adequately described with allowance made for the effect of localizing optical phonons in the quantum dots.     

Ultrasonic-assisted size-controllable synthesis of Bi2Te3 nanoflakes with electrogenerated chemiluminescence

Bi(2)Te(3) hexagonal nanoflakes with controllable edge length ranging from approximately 150 nm to as small as approximately 10nm were synthesized via an ultrasonic-assisted disproportionation route, using Te powder and Bi(NO(3))(3).5H(2)O as raw materials. The mechanochemical effects of the ultrasonic irradiation accelerated the reaction and were helpful to obtain relatively small and uniform nanocrystals. The products were characterized by X-ray powder diffraction, X-ray photoelectron spectra, transmission electron microscopy, and selected area electron diffraction techniques. Electrogenerated chemiluminescence of as-prepared Bi(2)Te(3) was also reported for the first time.     

Optical diffuse reflectance spectra of GaSb nanocrystals embedded in SiO2 matrix by radio-frequency magnetron co-sputtering

Nanocrystalline GaSb embedded in SiO₂ films was grown by radio-frequency magnetron co-sputtering. X-ray diffraction pattern and transmission electron microscopy (TEM) confirm the existence of GaSb nanocrystals in the SiO₂ matrix. The average size of GaSb nanoparticles is in the range of 3 to 11 nm. Diffuse reflectance spectra were used to characterize the small change of the band gap of the semiconductor. The diffuse reflectance spectra shows that the absorption peaks have a large blueshift of about 4.0 eV of the absorption relative to that of bulk GaSb. It has been explained by quantum confinement effects. Room temperature optical transmission spectra show that the absorption edge exhibits a very large blueshift of about 2.1 eV with respect to that of bulk GaSb in agreement with quantum confinement. Received: 28 July 1999 / Accepted: 27 October 1999 / Published online: 1 March 2000     

GeO2-SiO2纳米复合材料的合成及其光学特性研究

运用溶胶-凝胶法合成了GeO2-SiO2纳米复合材料,探索了为pH在2的条件下通过水解Si(OC2H5)4和GeCl4合成GeO2-SiO2干胶的过程.在100～1 200℃下对干胶进行热处理.采用UV光谱法测定了材料的光学性质,观察到随热处理温度的升高,样品光谱的吸收边向长波方向移动.由于温度的影响,晶粒长大,带隙能量减小,纳米微晶的量子尺寸效应显示出来.经X射线衍射分析,观察到了随热处理温度的增高,材料结构从无序到有序的转变过程,直到1 100℃时,有明显的微晶生成,其尺寸为5～10nm.     

Saturation of optical transitions in quantum dots and wires of porous silicon

The bleaching bands have been observed in the time-resolved nonlinear transmission spectra of porous silicon. The increase of transmission at discrete frequencies has been attributed to a saturation of optical transitions between the energy levels of electrons and holes spatially confined within quasi-zero-dimensional (quantum dots) and quasi-one-dimensional (quantum wires) nanostructures. The results of independent measurements using transmission electron microscopy have confirmed the existence of quantum dots and wires of corresponding size. The slowed-down energy relaxation from upper to lower levels of size quantization compared with intraband relaxation in the bulk have been observed in the cooled (80K) platelets of porous silicon.