Optical properties of zinc oxide nanoparticles and nanorods synthesized using an organometallic method.

The emission properties of nanocrystalline ZnO particles prepared following an organometallic synthetic method are investigated. Spherical particles and nanorods are studied. The shape of the particles and the ligands used are shown to influence the luminescence properties in the visible domain. Two different emissions are observed at 440 nm (approximately 2.82 eV) and at 580 nm (approximately 2.14 eV) that are associated with the presence of surface defects on the particles. The first emission corresponds to the well-known yellow emission located at 580 nm (approximately 2.14 eV) with a lifetime of 1850 ns for 4.0 nm size ZnO nanoparticles. The second emission at 440 nm (approximately 2.82 eV) is observed when amine functions are present. This strong blue emission is associated with an excitation energy less than that associated with the yellow emission displaying a lifetime of nine nanoseconds. A possible hole trapping effect by the amine groups on the surface of the ZnO particles is discussed as the origin of this emission. The modification of the intensities between the two visible emissions for different particle shapes is proposed to be related to a specific location of the amine ligands on the surface of the particles.     

Effect of protons on the optical properties of oxide nanostructures

Site-specific functionalization of oxide nanostructures gives rise to novel optical and chemical surface properties. In addition, it can provide deeper insights into the electronic surface structure of the associated materials. We applied chemisorption of molecular hydrogen, induced by ultraviolet (UV) light, followed by vacuum annealing to MgO nanocubes to selectively decorate three-coordinated oxygen ions (oxygen corner sites, for simplicity) with protons. Fully dehydroxylated nanocubes exhibit 3.2 +/- 0.1 eV photoluminescence induced by 4.6 eV light, where both emission and absorption are associated with three-coordinated oxygen sites. We find that partially hydroxylated nanocubes show an additional photoluminescence feature at 2.9 +/- 0.1 eV. Interestingly, the excitation spectra of the 2.9 and 3.2 eV emission bands, associated with protonated and nonprotonated oxygen corner sites, respectively, nearly coincide and show well-pronounced maxima at 4.6 eV in spite of a significant difference in their local atomic and electronic structures. These observations are explained with the help of ab initio calculations, which reveal that (i) the absorption band at 4.6 eV involves four-coordinated O and Mg ions in the immediate vicinity of the corner sites and (ii) protonation of the three-coordinated oxygen ions eliminates the optical transitions associated with them and strongly red-shifts other optical transitions associated with neighboring atoms. These results demonstrate that the optical absorption bands assigned to topological surface defects are not simply determined by the ions of lowest coordination number but involve contributions due to the neighboring atoms of higher coordination. Thus, we suggest that the absorption band at 4.6 eV should not be regarded as merely a signature of the three-coordinated O2- ions but ought to be assigned to corners as multiatomic topological features. Our results also suggest that optical absorption signatures of protonated and nonprotonated sites of oxide surfaces can be remarkably similar.     

Point-defect associated thermionic hole emissions from p-type Si/Si 1 − x Ge x /Si quantum well structures

The thermionic hole emissions from a p-type Si_0.67Ge_0.33 quantum well with a width of 7 nm and a point defect were investigated using deep level transient spectroscopy. An activation energy of 0.22 eV from the quantum well is consistent with the heavy hole level from the bottom of the well. The defect-related band with an energy of 0.30 eV originated from the space charge related to the point defect in the vicinity of the quantum well heterostructure. The origin of the point-defect-related band was confirmed by photoluminescence and the deep level was further clarified by using capacitance-voltage measurements and simulation by introducing a simple model of an interfacial hole trap center. The deep hole trap center apparently disappeared by an annealing effect, indicating that point defects are subject to thermal annealing. The microscopic measurement provides evidence on point defects in the quantum well structure and the thermal annealing also enhances the thermionic hole emission from the quantum well structure. Received: 22 August 1998 /Accepted: 15 February 1999     

结合第一性原理和热力学计算对HfO2晶体本征点缺陷的预测

基于第一性原理和热动力学方法模拟计算得到了不同温度和氧分压下HfO₂晶体本征点缺陷的形成能,并讨论了各种点缺陷的形成能随费米能级变化的规律. 结果表明: 当费米能级在价带顶附近时, 随着温度和氧分压的变化, 出现了不同的最稳定点缺陷(O_i⁰、V_O3²⁺和Hf_i⁴⁺). 当费米能级大于3.40 eV时, 主要点缺陷是带-4价的Hf 空位. 该晶体除Hf 空位在价带顶附近出现了奇数价态, 其它的点缺陷都只显现偶数价态, 这表明该晶体的点缺陷具有典型的negative-U特性. 本文还计算得到了该晶体可能存在的最稳定点缺陷在温度、氧分压和费米能级三维空间的分布, 这为分析该晶体在不同条件下可能出现的点缺陷类型提供清晰的图像, 为调控晶体点缺陷的形成提供参考.     

Crystal growth and electrical conduction of PbMoO4 and PbWO4

The phenomenon of the coloration of Czochralski grown single crystals of PbMoO₄ and PbWO₄ is discussed. This coloration is supposed to be related to an intrinsic point defect. We propose that during the crystal growth a loss of oxygen occurs, and consequently, oxygen deficient crystals are produced. The existence of electronic charge carriers at high temperatures and ionic majority defects in the oxygen sublattice is confirmed by conductivity measurements. The color center is supposed to be an oxygen vacancy that has trapped one or two electrons. On the basis of this simple model, various aspects of the coloration can be understood.     

Characterizing TiO2(110) surface states by their work function

The unreconstructed TiO(2)(110) surface is prepared in well-defined states having different characteristic stoichiometries, namely reduced (r-TiO(2), 6 to 9% surface vacancies), hydroxylated (h-TiO(2), vacancies filled with OH), oxygen covered (ox-TiO(2), oxygen adatoms on a stoichiometric surface) and quasi-stoichiometric (qs-TiO(2), a stoichiometric surface with very few defects). The electronic structure and work function of these surfaces and transition states between them are investigated by ultraviolet photoelectron spectroscopy (UPS) and metastable impact electron spectroscopy (MIES). The character of the surface is associated with a specific value of the work function that varies from 4.9 eV for h-TiO(2), 5.2 eV for r-TiO(2), 5.35 eV for ox-TiO(2) to 5.5 eV for qs-TiO(2). We establish the method for an unambiguous characterization of TiO(2)(110) surface states solely based on the secondary electron emission characteristics. This is facilitated by analysing a weak electron emission below the nominal work function energy. The emission in the low energy cut-off region appears correlated with band gap emission found in UPS spectra and is attributed to localised electron emission through Ti(3+)(3d) states.     

Optical properties of oxygen vacancies in germanium oxides: quantum chemical modeling of photoexcitation and photoluminescence

Photoabsorption and photoluminescence properties of single and double oxygen vacancy (OV and DOV) defects in quartz-like germanium oxide have been investigated by high-level ab initio calculations. It has been found that photoabsorption for these systems occurs at lower energies as compared to the analogous defects in SiO(2). For OV, the lowest electronic excitations with high oscillator strengths have energies of 6.7-7.0 eV, whereas for DOV, the lowest-energy photoabsorption band is calculated to be in the range of 5.5-5.9 eV. Significant geometry relaxation and large Stokes shift are inherent for these excited states and, as a result, their photoluminescence bands are predicted to peak at 3.1-3.3 eV for OV and at 2.6 eV for DOV. The double oxygen vacancy is suggested to be the most suitable candidate for generating bright blue photoluminescence observed experimentally for substoichiometric quartz-like GeO(2) nanowires, as the calculated optical properties of DOV are in close agreement with the features found in experiment.     

Pinning mononuclear Au on the surface of titania

We have deposited Au atoms on the surface of titania without sintering or surface damage. Mass-selected Au+ atoms were deposited from the gas phase at room temperature with kinetic energies from <3 to 190+/-3.5 eV. Scanning tunneling microscopy reveals island formation following deposition at <3 eV, while mainly atomic features are observed for energies between approximately 35 and approximately 190 eV. A mixture of islands and atomic features is observed at a landing energy of 20+/-3.5 eV, suggesting a critical energy above which pinning occurs. Cluster size is also probed as a function of coverage in the deposition of Au+ with 100 eV of energy, revealing that sintering begins at a coverage of only 0.06 ML. These observations suggest a mechanism in which high-energy collision leads to the annealing of any impact-created surface damage and the pinning of Au atoms to the surface. We provide a new method of preparing isolated Au atoms on an oxide surface, which can serve as a platform for catalytic studies.     

Collisional deactivation mechanism of luminescence in hydrogen-loaded Ge-doped fibers

We report experimental results on the temperature and Ge-content dependencies of the decay times of the 3.1 eV emission of twofold-coordinated germaniums, excited at 3.51 eV, in both virgin and H2-loaded germanosilicate optical fibers. For T<110 K, the lifetimes are temperature invariant in the two kinds of fibers; at higher temperatures, they are progressively shortened in the H2-loaded fibers whereas they remain unaltered in the virgin fibers. On increasing the Ge content in the fiber core the lifetime decreases in the whole temperature range. We also found a direct correlation in H2-loaded samples between the dependencies on temperature of the emission lifetime and the diffusion lengths of H2 molecules in silica glass determined from earlier work. These experimental features are explained by assuming an elastic-collisional deactivation mechanism due to interaction with diffusing H2 molecules, described in terms of an Arrhenius law with activation energy approximately 64 meV that operates in competition with the normal radiative process.     

SiOx纳米管的制备及其发光特性

Amorphous SiOx nanotubes with homogeneous diameters were fabricated in large-scale on silicon substrate by thermal evaporation method, with liquid gallium as medium. The average diameter of tubes is about 80 nm and the length is more than 10 1m, with small ratio between the inner and outer diameter of the tube. The silicon element in the substrate and the residual oxygen element in reaction chamber were first dissolved into liquid Ga. Then the SiOx precipitated from the surface of gallium droplet, forming the nanotube structure with Ga droplet being the center. The room temperature photoluminescence measurements under excitation at 260 nm show that the SiOx nanotubes has a strong blue emission at 453 nm with two shoulders at 410 and 480 nm respectively, which may be related to oxygen defects. The preparation method improved the traditional complicated method and also provided a new way to fabricate SiOx nanotubes in large quantity.     

An unusual technique for the study of nonstoichiometry: The thermal emission of electrons. Results for Y2O3 and TiO2

The thermal emission of electrons is presented as a useful technique for the study of nonstoichiometric oxides at high temperature. Results are reported for yttria and titanium dioxide, very different in their respective properties. For these compounds the density of emitted current follows a simple law, J ∝ P^x_O2, where P_O2 is the oxygen partial pressure and x is a constant that is not dependent on temperature. The electrical conductivity, when measured under the same conditions, follows a similar law. Therefore there is some evidence that at high temperature the chemisorption is not an important process, and the emission characteristics are then discussed in terms of a bulk nonstoichiometry. Data are obtained for yttrium oxide, as the width of the band gap E_g = 5.5 eV, the electron affinity χ = 2 eV. A reasonable defect for this oxide consists of oxygen vacancies V^2·_O and oxygen interstitials O^2′_i. The situation in the case of rutile is much more complicated as this oxide has a wide nonstoichiometric field with several suboxides and a nonisotropic structure. When the deviation to the stoichiometry is low the oxygen sublattice is stable and the main defects are titanium interstitials Ti^4·_i. When the compound is more reduced a surface reorganization then occurs which seems related to a crystallographic transformation leading to the Ti_nO_2n?1 suboxides. This technique give a lot of data on the properties of nonstoichiometric compounds in the vicinity of the surface at high temperature.     

Low temperature synthesis of cubic phase zinc sulfide quantum dots

In this study, we report on a new method for the synthesis of ZnS quantum dots (QDs). The synthesis was carried out at low temperature by a chemical reaction between zinc ions and freshly reduced sulfide ions in ethanol as reaction medium. Zinc chloride and elemental sulfur were used as zinc and sulfur sources, respectively and hydrazine hydrate was used as a strong reducing agent to convert elemental sulfur (S₈) into highly reactive sulfide ions (S²⁻) which react spontaneously with zinc ions. This facile, less toxic, inexpensive route has a high yield for the synthesis of high quality metal sulfide QDs. Transmission electron microscopy (TEM) image analysis and selected area electron diffraction (SAED) reveal that ZnS QDs are less than 3 nm in diameter and are of cubic crystalline phase. The UV-Vis absorption spectrum shows an absorption peak at 253 nm corresponding to a band gap of 4.9 eV, which is high when compared to the bulk value of 3.68 eV revealing strong quantum confinement. PL emission transitions are observed at 314 nm and 439 nm and related to point defects in ZnS QDs.     

Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

The band alignment and defect states of GaInZnO thin films grown on SiO₂/Si via radio frequency (RF) magnetron sputtering were investigated by using X‐ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo‐electron emission and photo‐induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo‐induced current transient spectroscopy and thermally stimulated exo‐electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field‐effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect. Copyright © 2016 John Wiley & Sons, Ltd.     

Surface state and composition of a disperse Pd catalyst after its exposure to ethylene

Pd black was exposed to ethylene alone or in its mixture with hydrogen at 300 and 573 K. The samples were investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Room temperature introduction of C(2)H(4) (also in the presence of H(2)) induced a binding-energy (BE) shift in the Pd 3d doublet and changed its full width at half-maximum (fwhm). The UPS features indicate shifting of electrons from the Pd d-band to Pd-H, Pd-C, and even Pd-OH species. Vinylidene (BE approximately 284.1 eV) may be the most abundant individual surface species on disperse Pd black, along with carbon in various stages of polymerization: "disordered C" (BE approximately 284 eV), graphite (approximately 284.6 eV), and ethylene polymer (approximately 286 eV), and also some "atomic" C (BE approximately 283.5 eV). Introduction of H(2) followed by ethylene brought about stronger changes in the state of Pd than exposure in the reverse sequence. This may indicate that the presence of some surface C may hinder the decomposition of bulk PdH. Formation of Pd hydride was blocked when ethylene was introduced prior to H(2). The C 1s intensity increased, the low-binding-energy C components disappeared, and graphitic carbon (BE approximately equal to 284.6 eV) prevailed after ethylene treatment at 573 K. The loss of the Pd surface state and "PdH" signal were observed in the corresponding valence band and UPS spectra. Hydrogen treatment at 540 K was not able to decrease the concentration of surface carbon and re-establish the near-surface H-rich state. UPS showed overlayer-type C in these samples. The interaction of Pd with components from the feed gas modified its electronic structure that is consistent with lattice strain induced by dissolution of carbon and hydrogen into Pd, as indicated by the d-band shift and the dilution of the electron density at E(F).     

Highly efficient electron stimulated desorption of O+ from gadolinia-doped ceria surfaces

Highly efficient electron stimulated desorption of O+ from gadolinia-doped ceria (GDC) surfaces annealed at 850 K in ultrahigh vacuum is observed and investigated. O+ desorption has a major threshold of approximately 40 eV and an intrinsic kinetic energy of approximately 5.6 eV. Since the threshold energy is close to Ce 5s and Gd 5s core levels, Auger decay of core holes is likely associated with O+ desorption from sites related to oxygen vacancies. The interactions of water and molecular oxygen with GDC surfaces result in a decrease in O+ desorption, suggesting that water and oxygen molecules adsorb mainly to oxygen vacancies. The dependence of O+ kinetic energies on the incident electron energy and temperature reveals surface charging as a result of electron trapping, hole trapping, and electron-hole recombination. The activation energy for surface charge dissipation is found to be 0.43 eV, close to the activation energy for ionic conduction (0.47 to 0.6 eV) in the same material.     

Strong near-infrared luminescence in BaSnO3

Powdered samples of the perovskite BaSnO(3) exhibit strong near-infrared (NIR) luminescence at room temperature, following band-gap excitation at 380 nm (3.26 eV). The emission spectrum is characterized by a broad band centered at 905 nm (1.4 eV), tailing on the high-energy side to approximately 760 nm. The Stokes shift is 1.9 eV, and measured lifetimes in the range 7-18 ms depend on preparative conditions. These extraordinary long values indicate that the luminescence involves a defect state(s). At low temperatures, both a sharp peak and a broad band appear in the visible portion of the luminescence spectrum at approximately 595 nm. Upon cooling, the intensity of the NIR emission decreases, while the integrated intensities of the visible emission features increase to approximately 40% of the NIR intensity at 77 K. Room-temperature photoluminescence (PL) is observed across the Ba(1-x)Sr(x)SnO(3) series. As the strontium content increases, the excitation maximum and band gap shift further into the UV, while the intensity of the NIR emission peak decreases and shifts further into the infrared. This combination leads to an unexpectedly large increase in the Stokes shift. The unusual NIR PL in BaSnO(3) may originate from recombination of a photogenerated valence-band hole and an occupied donor level, probably associated with a Sn(2+) ion situated roughly 1.4 eV above the valence-band edge.     

The nature of the lowest triplet configuration of flavins

Abstract— The phosphorescence spectrum of riboflavin has been reexamined at 77°K in an ethylene glycol: water matrix. The phosphorescence occurs at approximately the 605 nm (ca. 2-·05 eV) region, in reasonable agreement with the theoretical calculations of 1·6–1·8 eV [21]. The emission was found to be negatively polarized, and to have a relatively long lifetime (0·56 sec). On the basis of this data and additional theoretical results, it is concluded that the lowest triplet of riboflavin is of ³(τ,τ*) type. Upon addition of potassium iodide, the phosphorescence emission is enhanced through spin-orbit perturbation. The presence of oxygen (atmospheric pressure) in the frozen glass apparently has no effect on the emission. The phosphorescence spectra of alloxazine are also presented. Results of the present work have been applied to the photodephosphorylation of menadiol diphosphate in elucidating its mechan ism involving the riboflavin triplet and singlet oxygen.     

Raman and Photoluminescence Spectroscopic Detection of Surface‐Bound Li+O2− Defect Sites in Li‐Doped ZnO Nanocrystals Derived from Molecular Precursors

We present a detailed study of Raman spectroscopy and photoluminescence measurements on Li‐doped ZnO nanocrystals with varying lithium concentrations. The samples were prepared starting from molecular precursors at low temperature. The Raman spectra revealed several sharp lines in the range of 100–200 cm^?1, which are attributed to acoustical phonons. In the high‐energy range two peaks were observed at 735 cm^?1 and 1090 cm^?1. Excitation‐dependent Raman spectroscopy of the 1090 cm^?1 mode revealed resonance enhancement at excitation energies around 2.2 eV. This energy coincides with an emission band in the photoluminescence spectra. The emission is attributed to the deep lithium acceptor and intrinsic point defects such as oxygen vacancies. Based on the combined Raman and PL results, we introduce a model of surface‐bound LiO₂ defect sites, that is, the presence of Li⁺O₂^? superoxide. Accordingly, the observed Raman peaks at 735 cm^?1 and 1090 cm^?1 are assigned to Li? O and O? O vibrations of LiO₂.     

Catalytic synthesis and photoluminescence of gallium nitride nanowires

Single crystalline wurzite GaN nanowires were successfully synthesized on the NiO catalyzed alumina substrate through a simple thermal chemical vapor deposition method. The mixture of Ga and GaN powder was used as the source material of Ga for synthesizing GaN nanowires. The diameter of nanowires ranged 50–60 nm and the length was about hundreds of micrometers. The nanowires were single crystal with hexagonal wurzite structure. The peaks of Raman spectra of GaN nanowires appeared broadened and asymmetric compared with those of bulk GaN. PL spectra under excitation at 325 nm showed a strong emission at 3.315 eV from near band-edge transition and a broad weak emission at 2.695 eV related to deep level defects.     

Hydrogen-Related Paramagnetic Centers in Ge-Doped Sol-Gel Silica Induced by γ-Ray Irradiation

We have studied the generation mechanisms of H(II) paramagnetic centers in Ge-doped silica by investigating up to 10⁴ mol ppm sol-gel Ge-doped silica materials. We have considered materials with the same concentrations of Ge but that are produced by two different densification routes that give rise to different concentrations of Ge-related oxygen deficient centers (GeODC(II)). These centers are characterized by an optical absorption band at ∼5.2 eV (B_2β band) and two related emissions at ∼3.2 eV and ∼4.3 eV. The GeODC(II) content was estimated by absorption and emission measurements. The H(II) centers were induced by room temperature γ-ray irradiation and their concentration was determined by electron paramagnetic resonance measurements. The comparison between the two kinds of materials, obtained by different preparations, shows that the GeODC(II) concentration increases with the Ge content and is enhanced by vacuum densification. The comparison of irradiated samples shows that beyond the already known process of conversion of preexisting GeODC(II) into H(II) centers, another generation process of H(II) centers is effective that involves irradiation induced GeODC(II).