Energy Spectrum of La3Lu2Ga3O12：Cr^3＋ and Its Pressure-Induced R-Line-Shift Reversal

By means of both the theory for pressure-induced Shifts （PS） of energy spectra and the theory for shifts of energy spectra due to electron-phonon interaction （EPI）, the normal-pressure energy spectra of α and β centers of Cr^3＋ ions for LLGG：Cr^3＋ and the PS＇s of R1 lines and U band of these centers have been calculated at 10 K, respectively. The total calculated results are in very good agreement with the experimental data. For LLGG：Cr^3＋, the pressureinduced low-high crystal-field transition and the reversal of R1-line PS take place. The pressure-dependent variation of Rmix^ei （2E - 4T2） [mixing-degree of （t2^2 （^3T1）e^4T2） and （t2^3 E） base-wavefunctions in the wavefunction of R1 state without EPI] plays a key role for the reversal of R1-line PS. The behavior of the pure electronic PS of R1 line is quite different from that of the PS of R1 line due to EPI. It is the combined effect of them that gives rise to the total PS of R1 line. The comparison between R1-line PS＇s of GSGG：Cr^3＋ and LLGG：Cr^3＋ has been made. It is found that a peak of R1-line PS appears at Rmix^ei （^2E - ^4T2） ≈ 0.08.     

Pressure-Dependent Base-Wavefunction Admixture and Lifetime of R1 State of La3Lu2Ga3O12:Cr3+

As a key factor leading to the pressure-dependent R₁-line-shift reversal and R₁-state lifetime, at 10 K, the pressure-dependent variation of mixing-degree of |t₂²(³T₁)e⁴T₂〉 and |t₂³² E〉base-wavefunctions in the wavefunction of R₁ state of LLGG:Cr³⁺ has been calculated and analyzed. From this, the physical origin of the pressure-dependent R₁-line-shift reversal has been revealed. Furthermore, by using the pressure-dependent values of the sum of all square mixing-coefficients of |t₂²(³T₁)e⁴T₂〉in the wavefunction of R₁ state, the lifetimes of R₁ state of LLGG:Cr³⁺ at various pressures have been calculated, which are in good agreement with observed results. The quantum anticrossing effect between t₂³²E and t₂²(³T₁)e⁴T₂ levels due to both spin-orbital interaction and electron-phonon interaction is remarkable, which is related to the admixture of |t₂²(³T₁)e⁴T₂〉and |t₂³² E〉as well as the low-high crystal-field transition.     

Energy Spectra of the Tunable Laser Crystal Gd3Ga5O12:Cr3+ and Their Pressure-Induced Shifts

By means of both the theory for pressure-induced shifts (PS) of energy spectra and the theory for shifts of energy spectra due to electron-phonon interaction (EPI), at 300 K, the `pure electronic' contributions and the contributions from EPI to R₁ line, R₂ line, and U band of GGG:Cr³⁺ as well as their PS have been calculated, respectively. The total calculated results are in good agreement with all the experimental data. Their physical origins have been explained. It is found that the mixing-degree of |t₂²(³T₁)e ⁴T₂> and |t₂³²E> base-wavefunctions in the wavefunctions of R₁ level of GGG:Cr³⁺ is considerable under normal pressure, and the mixing-degree rapidly decreases with increasing pressure. The change of the mixing-degree with pressure plays a key role for PS of R₁ line or R₂ line. At 300 K, both the temperature-independent contribution to R₁ line (or R₂ line or U band) from EPI and the temperature-dependent one are important. The remarkable difference between pressure-dependent behaviors of PS of R₁ lines of GGG:Cr³⁺ and GSGG:Cr³⁺ results from the differences of their microscopic properties. The features of emission spectra of GGG:Cr³⁺ at various pressures have satisfactorily been explained.     

Fluorescence spectra and homogeneous line widths of Cr in glass nucleating ferroelectric Li2Ge7O15

We report optical studies of the new material – Cr³⁺-doped lithium–germanate glass, containing Li₂Ge₇O₁₅ (LGO) nanocrystalline particles. While only broadband ⁴T₂–⁴A₂ fluorescence from the low-field octahedral Cr³⁺ sites was observed from Cr³⁺ ions in the glass, in LGO nanocrystals high-field Cr³⁺ centers emit ²E–⁴A₂ (R–lines) fluorescence. The process of crystallization in the course of isothermal annealing of glasses was monitored spectroscopically and the nucleation of LGO crystallites was observed starting from the smallest clusters. Using the ²E–⁴A₂ fluorescence spectra it is possible to detect the ferroelectric phase transition in LGO:Cr³⁺ nanocrystals, whose critical temperature was found to be similar to that of the bulk crystals. Long-lived spectral holes were burned in the inhomogeneously broadened R-lines of Cr³⁺ in LGO nanocrystals at low temperatures. The linear temperature dependence of hole widths shows that the homogeneous broadening of ⁴A₂–²E transitions of Cr³⁺ in nanocrystals is due to interaction of Cr³⁺ electronic levels with the two-level systems (TLS) of the surrounding glass. The range of the Cr³⁺-TLS elastic dipole–dipole interaction is estimated.     

Absolute fluorescence quantum efficiency of GSGG : Cr at ambient temperature

The absolute fluorescence quantum efficiencies of three GSGG : Cr³⁺ samples have been determined at specific excitation wavelengths for the ⁴T₁and ⁴T₂ absorption bands using a novel photocalorimetric compensation technique [1]. For laser excitation in the ⁴T₁ and ⁴T₁ bands, the technique yields the same fluorescence quantum efficiency within experimental error for all three samples, viz. 0.840 ± 0.015. The effect of flourescence reabsorption on the measurements is discussed.     

Pressure-Induced Shifts of R, R', and B Line-Groups and Ground-State Zero-Field-Splitting of Ruby

By means of improved ligand-field theory, the “pure electronic” presure-induced shifts (PS's) and the PS's due to electron-phonon interaction (EPI) of the R₁, R₂, B₁, B₂, B₃, and R'₃ lines and the ground-state zero-field-splitting of ruby have been uniformly calculated. The calculation results are in very good agreement with all the experimental data. At normal pressure, ruby is a crystal with very strong crystal field. Thus, the admixture of |t₂²(³T₁)e⁴T₂〉and |t³₂²E〉bases in the wavefunction of R₁ level of ruby is small at normal pressure, and it gradually decreases with increasing pressure, which causes the R₁-line PS of ruby to monotonously red shift with approximate linearity. The combined effect of the pure electronic PS of R₁ line and the PS of R₁ line due to EPI gives rise to the total PS of R₁ line. The analyses and comparisons among the features of R₁-line PS's of three laser crystals (ruby, GSGG:Cr³⁺ and GGG:Cr³⁺) have been made, and the origin of their difference has been revealed.     

YAG中Cr3+和Yb3+的发光特征以及Cr3+和Yb3+之间的能量传递过程

室温下观察了YAG:Cr³⁺,Yb³⁺材料在近红外区域的发光特性, 并通过对Cr³⁺:⁴T₂和Yb³⁺:²F_5/2能级辐射跃迁寿命以及它们布居时间的比较研究,提出了从Cr³⁺到Yb³⁺的能量传递机制,同时借助于能级图描述了从Cr³⁺到Yb³⁺的能量传递以及Cr³⁺和Yb³⁺的近红外发光过程。     

新型近红外超长余辉材料Zn3Al2Ge2O10：Cr3+的发光性能

采用高温固相法制备了新型近红外长余辉材料Zn₃Al₂Ge₂O₁₀：Cr³⁺,利用X射线衍射、荧光光谱和余辉衰减曲线等对合成的样品进行了分析。结果表明：样品Zn₃Al₂Ge₂O₁₀：Cr³⁺是Ge⁴⁺取代ZnAl₂O₄：Cr³⁺尖晶石中的部分Al³⁺而形成的固溶体。在397 nm光的激发下,发射光谱主要由两个明显的窄峰叠加在Cr³⁺离子的自旋允许跃迁⁴T₂→⁴A₂辐射的宽发射带上。发光强度随着Cr³⁺离子掺杂浓度的增大和煅烧温度的升高而出现浓度猝灭及温度猝灭现象。当Zn₃Al_2-xGe₂O₁₀：xCr³⁺中的Cr³⁺离子掺杂量x为2%且煅烧温度为1 350 ℃时,样品的近红外发光及余辉强度最大。材料的余辉持续时间超过300 h,余辉发射谱峰位与荧光发射光谱中的N线一致,均位于697 nm附近。最后分析了煅烧温度对样品余辉性能的影响,并对材料的余辉机制进行了探讨。     

Energy Spectrum and Its Pressure-Induced Shift and g Factor of ZnS:Mn2+

By using strong-field scheme, the complete d⁵ energy matrix with D_2d symmetry has been constructed. Then, by diagonalization of this matrix at normal and various pressures,the whole energy spectrum [including the ground-state zero-field-splitting (GSZFS)], its PS and the g factor of the ground state for zns:Mn²⁺ have uniformly been calculated. According to the eigenfunctions and PS, the new assignments of five absorption bands have been given.The variation of tetragonal field with pressure makes a main contribution to the pressureinduced shift (PS) of GSZFS of zns:Mn²⁺, which supports the existence of tetragonal Jahn-Teller distortion in zns:Mn²⁺. It is found that when P≥62 kbar, t₂⁴(³T₁)e⁴T₁ merges with t₂e^{4 2}T₂, which has to be taken into account in the calculation of PS of the fifth band in the range of 1 bar ~ 95 kbar. It is demonstrated that the Mn²⁺ ions in ZnS:Mn²⁺ have tetrahedral coordination, and the difference between ζ and ζ' caused by the covalency effect is very important for GSZFS. The physical essentials of typical levels, GSZFS and their PS have been revealed. By taking into account the influence of covalency on t₂³(⁴A₂)e²(³A₂)⁴A₁ and t₂³(²E)e²(³A₂)⁴E, the positon of the third absorption band at normal pressure has been estimated.     

Investigation of 1.3 μm emission in Nd-doped bismuth-based oxide glasses

Nd₂O₃-doped 43Bi₂O₃–xB₂O₃–(57−x)SiO₂–1.0Nd₂O₃ (x=57, 47, 39, 28.5, 19.5, 10, 0 mol%) bismuth glasses were prepared by the conventional melt-quenching method, and the Nd³⁺: ⁴F_3/2→⁴I_13/2 fluorescence properties had been studied in an oxide system Bi₂O₃–B₂O₃–SiO₂. The Judd–Ofelt analysis for Nd³⁺ ions in bismuth boron silicate glasses was also performed on the basis of absorption spectrum, and the transition probabilities, excited-state lifetimes, the fluorescence branching ratios, quantum efficiency and the stimulated emission cross-sections of ⁴F_3/2→⁴I_13/2 transition were calculated and discussed. The stimulated emission cross-sections of 1.3 μm were quite large due to a large refractive index of the host. Although the effective bandwidths decreased with increasing SiO₂ content, quantum efficiencies and stimulated emission cross-sections enhanced largely with increasing SiO₂ content.     

Complete identification of the Ti-related levels in GaP

A complete understanding of the electrical and optical properties of all the Ti-related levels is deduced from a number of different characterization techniques performed on several types of Ti-doped GaP materials (n-type, p-type and semi-insulating) grown by LEC. The Ti³⁺ /Ti⁴⁺ donor level and the Ti²⁺ /Ti³⁺ acceptor level are found at E_v + 0.92 and about E_c - 0.56 eV, respectively. Likewise, a comprehensive scheme of the two internal transitions ³T₂→³A₂ of the Ti²⁺ charge state and ²T₂→²E of the Ti³⁺ charge state is given.     

钇镓石榴石中Tb3+到Ce3+的无辐射能量传递特征

在Y₃Ga₅O₁₂石榴石中,室温下采用紫外激光选择激发光谱研究了能量从Tb³⁺的⁵D₃和⁵D₄能级无辐射传递给Ce³⁺的²D_3/2能级。实验结果符合Frster-IH直接无辐射传递理论。⁵D₃(Tb³⁺)→²D_3/2(Ce³⁺)能量传递是电偶-偶极子相互作用机理,其平均临界传递距离为R₀=16.3?,而⁵D₄(Tb³⁺)→²D_3/2能量传递是起主导作用的电偶-偶极子相互作用,其平均临界传递距离为11.2?。在⁵D₄的传递过程中,电偶-四极子相互作用也应予以考虑。 关键词：     

Energy Spectrum,g Factors,Strain-Induced Level-Splittingsand R-Line Thermal Shift of MgO:V2+

Traditional ligand-field theory has to be improved by taking into account both pure electronic contribution and electron-phonon interaction one (including lattice-vibrational relaxation energy). By means of improved ligand-field theory, the R line, t₂^{3 2}T₁ and t₂^{3 2}T₂ lines, t₂² (³T₁)e⁴T₂, t₂² (³T₁)e⁴T₁ and t₂ e²(⁴A₂)⁴T₁ bands, g factors of t₂^{3 4}A₂ and t₂^{3 2}E, four strain-induced level-splittings and R-line thermal shift of MgO:V₂₊ have been calculated. The results are in very good agreement with the experimental data. It is found that for MgO:V₂₊, the contributions due to electron-phonon interaction (EPI) come from the first-order term; the contributions from the second-order and higher terms are insignificant. In thermal shift of R line of MgO:V₂₊, the temperature-dependent contribution due to EPI is dominant. The results obtained in this work may be used in theoretical calculations of other effects of EPI.     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

YAG粉末材料中Cr3+敏化的Yb3+近红外发光性质

采用高温固相反应法合成了YAG: 0.02Cr³⁺,yYb³⁺系列粉末材料,研究了该系列材料在近红外区域的发光特性,主要包括Cr³⁺,Yb³⁺的发光性质、Cr³⁺: ⁴T₂和Yb³⁺: ²F_5/2能级辐射跃迁寿命以及其布居时间的比较,给出了Yb³⁺最佳掺杂量为10%。实验表明:通过Cr³⁺→Yb³⁺能量传递,实现了Yb³⁺在1 000 nm附近近红外发光的增强,这对进一步提高c-Si太阳能电池转换效率打下了坚实基础。     

Temperature dependence of the exafs spectrum in YBa2Cu3O7−δ compounds

The temperature dependence of the extended X-ray absorption fine structure (EXAFS) is studied in the high T_c superconductors, YBa₂Cu₃O_7−δ. The measurements were done at the Cu K-edge for samples of two orthorhombic phases (T_c≈90 K and ≈58 K, respectively) and a nonsuperconducting tetragonal phase. Interatomic distances and mean square relative displacements σ² for Cu-O bonds are determined by the least squares refinement. The results indicate that values of σ² increase near T_c for both the orthorhombic samples. It is concluded that this anomalous behavior related to T_c is caused by an anomalous vibration of oxygen atoms in the Ba-O layer. Changes in the Cu-O distances from 300 to 20 K are not found.     

Effects of cation- or oxide ion-defect on conductivities of apatite-type La–Ge–O system ceramics

A series of apatite-type La–Ge–O ceramics were prepared and their cation-defect at the 4f+6h sites and oxide ion-defect at 2a site were investigated. In La_xGe₆O_12+1.5x ceramics of x=6–12, the higher conductivities were obtained in the region of apatite composition, La_x(GeO₄)₆O_1.5x−12 (x=8–9.33), and the highest conductivity was achieved for La₉(GeO₄)₆O_1.5 (x=9), where the number of cation (La³⁺) occupying the 4f+6h sites is 9 and the number of oxide ion occupying the 2a site is 1.5. The ceramics with cation- and oxide ion-defects were La_9−0.66xSr_x(GeO₄)₆O_1.5 (x=0–1), La_9−1.33xZr_x(GeO₄)₆O_1.5 (x=0–1), La_9−xSr_x(GeO₄)₆O_1.5−0.5x (x=0–3), La_9−xZr_x(GeO₄)₆O_1.5+0.5x (x=0–1), La_x(GeO₄)_3x−21(AsO₄)_27−3xO_1.5 (x=0–3), La_x(GeO₄)_33−3x(AlO₄)_3x−27O_1.5 (x=0–3), La₉(GeO₄)_6−x (AlO₄)_xO_1.5−0.5x (x=0–3), La₉(GeO₄)_6−x(AsO₄)_xO_1.5+0.5x (x=0–1), La_9.33−xSr_x(GeO₄)₆O_2−0.5x (x=0–1.2) and La_x(GeO₄)_4.5(AlO₄)_1.5O_1.5x−12.75 (x=8.8–9.83), which were prepared by the partial substitution of La³⁺and GeO₄⁴⁻of the basic apatite La₉(GeO₄)₆O_1.5 with Sr²⁺ or Zr⁴⁺ and AlO₄⁵⁻ or AsO₄³⁻. Such substitutions lowered the conductivity of La₉(GeO₄)₆O_1.5. These results were discussed by the electrostatic interaction between Sr²⁺, Zr⁴⁺, AlO₄⁵⁻ or AsO₄³⁻ and oxide ion as a conductive species.     

Ln2Sn2O7：Er3+纳米晶的制备及发光性能研究

采用溶胶-凝胶法合成Ln₂Sn₂O₇:Er³⁺(Ln=La,Gd,Y)纳米晶。通过X射线衍射和场发射扫描电子显微镜测试了样品的晶体结构和形貌,同时对样品的上转换发光性能进行了测试。结果表明:在980 nm连续激发光的激发下,样品主要表现为绿光发射。发射中心在528,549 nm的绿光和672 nm处的红光发射分别对应Er³⁺离子的⁴S_3/2→⁴I_15/2、²H_11/2→⁴I_15/2和 ⁴F_9/2→⁴I_15/2跃迁。以La₂Sn₂O₇:Er³⁺纳米晶为例,Er³⁺离子的摩尔分数为7%、退火温度为1 150℃是其制备的最佳条件,此时其各个发射峰的强度最高。对La₂Sn₂O₇:Er³⁺的发光强度与激发功率关系的研究表明,其绿光和红光发射均为双光子过程。激发光吸收和能量转移是La₂Sn₂O₇:Er³⁺纳米晶上转换发光的主要机制。     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

New evidence for a subshell gap at N=32

An 879.9(2) keV γ-ray transition has been identified following the β decay of ⁵⁸V and assigned as the 2⁺₁→0⁺₁ transition in ⁵⁸Cr₃₄. A peak in the energies of the first excited 2⁺ states for the even–even chromium isotopes is now evident at ⁵⁶Cr₃₂, providing empirical evidence for a significant subshell gap at N=32. The appearance of this neutron subshell closure for neutron-rich nuclides may be attributed to the diminished π1f_7/2–ν1f_5/2 monopole proton–neutron interaction as protons are removed from the 1f_7/2 single-particle orbital.