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1.
异质外延生长钙钛矿结构氧化物薄膜   总被引:1,自引:0,他引:1  
影响直接外延生长氧化物薄膜的因素有很多,最主要的是保证氧化物薄膜的正确成相和在单晶衬底上成核.直接外延生长时,衬底温度影响到薄膜的成相.衬底温度还影响薄膜的生长动力学,并因此影响薄膜的外延生长取向.由于薄膜是首先在衬底表面成核、成相并生长的,因此衬底材料晶格的影响是不容忽视的.衬底材料(或异质外延材料)与薄膜的相互作用是影响外延生长的最直接因素,而晶格常数失配会造成薄膜样品中存在应力并影响样品性质.利用脉冲激光淀积法,我们成功地外延生长了YBa2Cu3O7超导薄膜、Sr0.5Ba0.5TiO3铁电介电薄膜、La0.7Ca0.3MnO3铁磁巨磁电阻薄膜、La0.5Sr0.5CoO3导电薄膜等多种具有钙钛矿结构的氧化物功能薄膜.以这些钙钛矿结构氧化物薄膜的外延生长为例,本文讨论影响氧化物薄膜异质外延生长的因素  相似文献   

2.
湿化学反应法制备了CaCuxMn3-xMn4 O12(x=0.2,0.4,0.6,0.8,1.0,1.2,1.4)系列材料的前驱体,然后通过高温烧结做成样品,进一步丰富了这类样品的研究内容.X射线衍射表明掺杂Cu2+在x=0.2到x=1.4范围内这些材料都能够成单相.通过Rietveld全谱拟合的方法分析,结果表明随掺...  相似文献   

3.
卢善瑞  崔春龙  张东  陈梦君  杨岩凯 《物理学报》2011,60(7):78901-078901
为研究放射性核素固化介质备选矿物锆英石的抗γ射线辐照结构稳定性,以澳大利亚锆英石为研究对象,通过60Co源γ射线辐照装置对样品施以1728 kGy的γ射线辐照.利用X射线荧光光谱仪、扫描电子显微镜和X射线衍射仪对样品的元素含量、γ射线辐照前后的微观形貌及物相变化进行表征,同时利用Rietveld方法对γ射线辐照前后的样品进行了结构精修.结果表明:澳大利亚锆英石经1728 kGy剂量的γ射线辐照后未发生物相变化,射线辐照前后样品的晶胞参数仅发生了10-4 量级的变 关键词: 锆英石 γ射线 辐照 Rietveld结构精修  相似文献   

4.
于洪飞  张鲁山  吴小会  郭永权 《物理学报》2011,60(10):107306-107306
利用非自耗真空电弧熔炼法制备了NdNi2Ge2化合物样品,采用X射线粉末衍射技术和Rietveld全谱拟合分析方法测定了其晶体结构. 结果显示该化合物的空间群为I4/mmm,点阵参数为:a=4.120(1),c=9.835(0),Z=2,Nd原子占据2a晶位,Ni原子占据4d晶位,Ge原子占据4e晶位. NdNi2Ge2化合物呈现顺磁性,应用居里-外斯定律拟合计算得到居里-外斯常数为25.8,居里-外斯温度为6.24 K. 有效势磁矩为3.69μB,这与理论计算Nd3+的磁矩相符,表明磁矩主要源于Nd3+. 电阻率变化范围为0.3 Ω ·μm-1-1 Ω ·μm,电阻曲线拟合显示NdNi2Ge2呈半金属性. 关键词: 2Ge2')" href="#">NdNi2Ge2 Rietveld结构精修 电磁输运  相似文献   

5.
LuTaO4是最高密度的闪烁体基质,研究它的结构及其相变对单晶制备具有指导意义.用固相法制备了Lu2O3和Ta2O5摩尔比为1:1时在不同温度下形成的多晶粉末,用X射线衍射及Rietveld全谱拟合研究了多晶粉末的物相和结构.结果表明,Lu2O3:Ta2O5摩尔比为1:1的样品在1740℃时合成的物相为M′-LuTaO4,在1800℃时为M′-Lu Ta O?4和M-LuTaO4的混合物,在1840C时全部转变为M-LuTaO4.当温度升高到2058℃时,样品呈熔融状态,对淬火得到的样品进行结构精修,给出了M-LuTaO4,Lu3Ta O7和Ta2O5的晶胞和原子坐标参数,它们的重量比分别占78.1%,18.9%和3.0%.这些结果为制备以LuTaO4为基质的高密度闪烁体单晶具有参考价值.  相似文献   

6.
Sc2-xGaxW3O12体系负热膨胀性能研究   总被引:1,自引:0,他引:1       下载免费PDF全文
通过固相反应法,在1100 ℃下成功制备出了系列Ga掺杂Sc2-xGaxW3O12x=0, 0.05, 0.1, 0.2, 0.3, 0.5, 0.8)固溶体.X射线粉末衍射结构精修表明,Ga以替代Sc的形式成功进入Sc2-xGaxW3O12晶格,但不能获得端元组分Ga2W3关键词: 负热膨胀 热膨胀系数 Rietveld结构精修  相似文献   

7.
通过X射线粉末衍射数据,用Rietveld精修方法分析了Te部分替换LaMnO3中La后,其晶格参数及其结构对称性所发生的变化.结果表明:Te掺杂LaMnO3系列样品具有R(3)C的晶格结构对称性,其MnO6八面体晶格还产生了伸张畸变,畸变程度随Te掺杂量的增加而增大.此外根据Mn-O-Mn键角、eg电子能带的带宽、A位离子平均半径及A位离子尺寸失配度等的变化特点,推测Te掺杂LaMnO3样品除居里温度等相变物理量将随x增加而非线性变化外,还可能产生自旋玻璃态、相分离等宏观现象.  相似文献   

8.
TFA-MOD方法制备YBCO超导薄膜研究   总被引:3,自引:1,他引:3  
采用TFA-MOD方法在LaAlO3(001)单晶基片上制备了性能良好的YBCO超导薄膜:临界电流密度(Jc)可达3MA/cm2(77K,0T),超导转变温度Tc≈90K,转变宽度ΔTc=0.5K,其一次涂层厚度达338nm.通过X射线衍射(XRD)分析表明YBCO具有纯c-轴取向、无a-轴取向的晶粒存在.ω扫描分析表明该YBCO薄膜具有很好的面外外延性,其摇摆曲线的半高宽(FWHM)为0.653°. 用SEM分析也表明膜的表面无裂纹存在,表面平整,没有a轴晶粒生长.  相似文献   

9.
采用先电子束沉积后退火的两步法制备YBCO超导薄膜;根据薄膜的超导临界电流密度、X射线衍射(XRD)和扫描电镜(SEM)的测试结果,研究了不同预处理气氛对YBCO薄膜结构、表面形貌及超导性能的影响。  相似文献   

10.
闻海虎  李宏成  戚振中  曹效文 《物理学报》1990,39(11):1811-1814
对RBa2Cu3O7-δ(R=Y,Gd)超导薄膜电阻温度关系的仔细测量,观察到在Tc附近有相当强的超导涨落现象,研究发现,多晶和外延的YBa2Cu3O7-δ薄膜在Tc以上均呈现出2D涨落超导电性;而当温度趋向于Tc时,有—2D向3D的转变发生,这与Lawrence-Doniach理论很好地相符,实验中还发现,一 关键词:  相似文献   

11.
<正>We find that the superconductivity in the thin films of the formerly believed non-superconducting parent compound FeTe is accompanied by an emergence of second order with a correlation length of 742 nm and 258 nm at 10 K and 300 K,respectively.The structural phase transition found in iron pnictide superconductors,in non-superconducting FeTe bulk samples,and in FeSe superconducting thin films is not observed in the superconducting FeTe thin films.The interplay between superconductivity and long range order may suggest the crucial role of competition between electronic localization and itinerancy which leads to strong quantum fluctuations in the FeTe system.  相似文献   

12.
文中以LaAlO3为衬底,制作了一层Tl-2212高温超导薄膜,并在薄膜上生长一层较薄的CeO2缓冲层,然后再在上面生长一层Tl-2212高温超导薄膜。经过测量,研究了多层膜结构对超导薄膜临界电流密度的影响。结果显示,在缓冲层的结晶过程中超导薄膜的晶格受到影响,结晶过程中的处理很容易诱导上面一层Tl-2212超导薄膜产生杂相,导致临界电流密度降低。  相似文献   

13.
直流磁控溅射一步法原位制备MgB2超导薄膜   总被引:5,自引:1,他引:5       下载免费PDF全文
用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K. 关键词: 高温超导体 超导薄膜 磁控溅射 二硼化镁  相似文献   

14.
A new type of HTc superconducting film combshape resonator for radio frequency superconducting quantum interference devices (RF SQUID) has been designed. This new type of superconducting film comb-shape resonator is formed by a foursquare microstrip line without a flux concentrator. The range of the center frequency of this type of resonator varies from 800 MHz to 1 300 MHz by changing the length of the teeth. In this paper, we report on simulating the relationship of the value of the center frequency and the length of the teeth, and testing the noise of HTc RF SQUID coupling this comb-shape resonator. __________ Translated from Chinese Journal of Low Temperature Physics, 2005, 27(3) (in Chinese)  相似文献   

15.
《中国物理 B》2021,30(7):77402-077402
Superconducting transition edge sensor(TES) bolometers require superconducting films to have controllable transition temperatures T_c in different practical applications.The value of T_c strongly affects thermal conductivity and thermal noise performance of TES detectors.Al films doped with Mn(Al-Mn) of different concentrations can accomplish tunable T_(c.)A magnetron sputtering machine is used to deposit the Al-Mn films in this study.Fabrication parameters including sputtering pressure and annealing process are studied and their influences on T_c and superconducting transition width ΔT_c are optimized.The Al-Mn films with ΔT_c below 1.0 mK for T_c in a range of 520 mK-580 mK are successfully fabricated.  相似文献   

16.
何安  薛存 《物理学报》2022,(2):278-285
超导涡旋运动引起的棘齿效应可以广泛应用于磁通泵、整流器和超导开关等装置.金兹堡-朗道理论是研究超导磁通涡旋问题强有力的工具和手段.本文采用有限差分法数值求解时间相关的金兹堡-朗道方程,利用快速傅里叶变换方法求解耦合的热传导方程,数值模拟了临界温度梯度超导薄膜磁通涡旋动力学行为,提出了一种新的调节超导整流效应的方式,并研...  相似文献   

17.
Control on the size of copper oxide (CuO) in the nano range is a highly motivating approach to study its multifunctional nature. The present investigation reports a sol-gel derived Ni doped CuO nanoparticles (Cu1-xNixO). Rietveld refinement of the XRD spectra confirms the formation of single monoclinic phase of Cu1-xNixO nanoparticles having crystallite size within the range of 19–21 nm. Raman spectra show the presence of characteristics Raman active modes and vibrational bands in the Cu1-xNixO samples that corroborate the monoclinic phase of the samples as revealed by refinement of XRD data. The estimated band gap of pure CuO is found to be ∼1.43 eV, which decreases with the increase of dopant concentration into CuO matrix. This result is in line with estimated crystallite size. Magnetization curves confirm the weak ferromagnetic nature of Cu1-xNixO nanoparticles which reveal the DMS phase. This weak magnetic nature may be induced in the samples due to the exchange interaction between the localized magnetic d-spins of Ni ions and carriers (holes or electrons) from the valence band of pristine CuO lattice. Replacement of Cu+2 by Ni+2 ions into the host CuO lattice induces the magnetization. The quantified value of squareness ratio (S < 0.5) confirms the inter-grain magnetic interactions in the Cu1-xNixO nanoparticles which is also the reason of weak induced magnetization.  相似文献   

18.
A square hole array is fabricated over a micro-bridge of NbN thin film by electron beam lithography and reactive ion milling. Magneto-resistance is measured across the micro-bridge filled with a hole array near the superconducting transition temperature. It is found that magneto-resistance minima occur when the number of vortices is an integer multiple or a fractional multiple of the number of holes. The temperature and the current dependences of the matching effect are studied.  相似文献   

19.
为提高超导加速腔的加速梯度和Q值,改进了薄膜型超导腔的加速性能。研究证明,对于铜铌溅射腔,在无氧铜衬底和铌膜之间加入NbN 层可以提高铌膜的超导转变温度,改善晶格结构;对纯铌超导腔提出了改进方法,在传统的纯铌超导腔表面制备多层的超导-绝缘-超导复合膜可以屏蔽Nb腔表面的界面场,提高超导腔的临界磁场,从而提高了铌腔的加速梯度。  相似文献   

20.
We report the surface electronic structure and stoichiometry of FeTe films following the incorporation of oxygen by three different methods: air exposure, dry oxygen exposure and low temperature oxygen annealing. X-ray photoemission experiments show that oxygen incorporation changes the initial valence state of Fe from 0 to mainly 3+. We also observe that the Te changes valence from initially 0 to mixed 0 and 4+. The rate of valence changes is seen to depend on the method of incorporation. In addition, it is observed that the surface of the FeTe films is left in a Te deficient state following any type of exposure to oxygen.  相似文献   

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