Temperature dependence of the field effect mobility of solution-grown germanium nanowires

The temperature dependence of the field effect mobility was measured for solution-grown single-crystal Ge nanowires. The nanowires were synthesized in hexane from diphenylgermane by the supercritical fluid-liquid-solid process using gold nanocrystals as seeds. The nanowires were chemically treated with isoprene to passivate their surfaces. The electrical properties of individual nanowires were then measured by depositing them on a Si substrate, followed by electrical connection with Pt wires using focused ion beam assisted chemical vapor deposition. The nanowires were positioned over TaN or Au electrodes covered with ZrO2 dielectric that were used as gates to apply external potentials to modulate the conductance. Negative gate potentials increased the Ge nanowire conductance, characteristic of a p-type semiconductor. The temperature-dependent source/drain current-voltage measurements under applied gate potential revealed that the field effect mobility increased with increasing temperature, indicating that the carrier mobility through the nanowire is probably dominated either by a hopping mechanism or by trapped charges in fast surface states.     

Mimicking both petal and lotus effects on a single silicon substrate by tuning the wettability of nanostructured surfaces

We describe a new method of fabricating large-area, highly scalable, "hybrid" superhydrophobic surfaces on silicon (Si) substrates with tunable, spatially selective adhesion behavior by controlling the morphologies of Si nanowire arrays. Gold (Au) nanoparticles were deposited on Si by glancing-angle deposition, followed by metal-assisted chemical etching of Si to form Si nanowire arrays. These surfaces were chemically modified and rendered hydrophobic by fluorosilane deposition. Au nanoparticles with different size distributions resulted in the synthesis of Si nanowires with very different morphologies (i.e., clumped and straight nanowire surfaces). The difference in nanowire morphology is attributed to capillary force-induced nanocohesion, which is due to the difference in nanowire porosity. The clumped nanowire surface demonstrated the lotus effect, and the straighter nanowires demonstrated the ability to pin water droplets while maintaining large contact angles (i.e., the petal effect). The high contact angles in both cases are explained by invoking the Cassie-Baxter wetting state. The high adhesion behavior of the straight nanowire surface may be explained by a combination of attractive van der Waals forces and capillary adhesion. We demonstrate the spatial patterning of both low- and high-adhesion superhydrophobicity on the same substrate by the simultaneous synthesis of clumped and straight silicon nanowires. The demonstration of hybrid superhydrophobic surfaces with spatially selective, tunable adhesion behavior on single substrates paves the way for future applications in microfluidic channels, substrates for biologically and chemically based analysis and detection where it is necessary to analyze a particular droplet in a defined location on a surface, and as a platform to study in situ chemical mixing and interfacial reactions of liquid pearls.     

Enhanced nucleation, growth rate, and dopant incorporation in ZnO nanowires

Pure and Co-doped ZnO nanowire arrays were grown on polished silicon substrates with high rates via an electrochemical technique. A negative potential applied to the substrate not only enhances the nucleation density on polished substrates more than 4 orders of magnitude but also increases the growth rate by 35 times over that obtained in the absence of the potential. Furthermore, incorporation of metallic dopants in ZnO nanowires was demonstrated in the low-temperature process. This fast growth technique provides a route to fabrication of low-cost highly oriented ZnO nanowires on polished substrate for industrial applications.     

Nucleation and growth of germanium nanowires seeded by organic monolayer-coated gold nanocrystals

Germanium nanowires, ranging from 10 to 150 nm in diameter, were grown several micrometers in length in cyclohexane heated and pressurized above its critical point. Alkanethiol-protected gold nanocrystals, either 2.5 or 6.5 nm in diameter, were used to seed wire formation. Growth proceeded through a solution-liquid-solid mechanism at growth temperatures ranging from 300 to 450 degrees C. At temperatures exceeding 500 degrees C, large Ge particulates formed due to unfavorable growth kinetics. Temperature, the nature of the precursor, precursor concentration, and the Au:Ge ratio were determining factors in nanowire morphology. The Ge nanowires were characterized using a range of techniques, including XPS, XRD, high-resolution TEM and SEM, nanometer-scale EDS mapping, and DTA.     

Chemical surface passivation of Ge nanowires

Surface oxidation and chemical passivation of single-crystal Ge nanowires with diameters ranging between 7 and 25 nm were studied. The surface chemistry differs significantly from that of well-studied monolithic atomically smooth single-crystal substrates. High-resolution Ge 3d XPS measurements reveal that Ge nanowires with chemically untreated surfaces exhibit greater susceptibility to oxidation than monolithic Ge substrates. Multiple solution-phase routes to Ge nanowire surface passivation were studied, including sulfidation, hydride and chloride termination, and organic monolayer passivation. Etching in HCl results in chloride-terminated surfaces, whereas HF etching leads to hydride termination with limited stability. Exposure to aqueous ammonium sulfide solutions leads to a thick glassy germanium sulfide layer. Thermally initiated hydrogermylation reactions with alkenes produce chemically stable, covalently bonded organic monolayer coatings that enable ohmic electrical contacts to be made to the nanowires.     

Solution synthesis of germanium nanowires using a Ge2+ alkoxide precursor

A simple solution synthesis of germanium (Ge0) nanowires under mild conditions (<400 degrees C and 1 atm) was demonstrated using germanium 2,6-dibutylphenoxide, Ge(DBP)2 (1), as the precursor where DBP = 2,6-OC6H3(C(CH3)3)2. Compound 1, synthesized from Ge(NR2)2 where R = SiMe3 and 2 equiv of DBP-H, was characterized as a mononuclear species by single-crystal X-ray diffraction. Dissolution of 1 in oleylamine, followed by rapid injection into a 1-octadecene solution heated to 300 degrees C under an atmosphere of Ar, led to the formation of Ge0 nanowires. The Ge0 nanowires were characterized by transmission electron microscopy (TEM), X-ray diffraction analysis, and Fourier transform infrared spectroscopy. These characterizations revealed that the nanowires are single crystalline in the cubic phase and coated with oleylamine surfactant. We also observed that the nanowire length (0.1-10 microm) increases with increasing temperature (285-315 degrees C) and time (5-60 min). Two growth mechanisms are proposed based on the TEM images intermittently taken during the growth process as a function of time: (1) self-seeding mechanism where one of two overlapping nanowires serves as a seed, while the other continues to grow as a wire; and (2) self-assembly mechanism where an aggregate of small rods (<50 nm in diameter) recrystallizes on the tip of a longer wire, extending its length.     

Influence of surface states on electron transport through intrinsic Ge nanowires

Solution-grown single-crystal Ge nanowires were used as conductive channels in field effect transistor devices to study the influence of surface states on their electron transport properties. Nanowires contacted with Pt electrodes using focused ion beam metal deposition exhibited linear current-voltage (IV) curves at room temperature with apparent resistivities ranging from 10(1) to 10(-1) Omega cm. In all cases, the nanowire conductance decreased with positive external electric fields applied perpendicular to the nanowire surface by a gate electrode, characteristic of p-type carrier accumulation at the nanowire surface. The field-induced change in conductance exhibited a time-dependent relaxation, with response time and magnitude of current decrease that depended on the nanowire surface chemistry. Nanowires treated with an organic passivation layer using a thermally initiated hydrogermylation reaction exhibited 2 orders of magnitude slower current relaxation and a smaller decrease in current relative to "bare" nanowires with oxidized surfaces.     

Tuning the gas sensing performance of single PEDOT nanowire devices

This paper reports the synthesis and dopant dependent electrical and sensing properties of single poly(ethylenedioxythiophene) (PEDOT) nanowire sensors. Dopant type (i.e. polystyrenesulfonate (PSS(-)) and perchlorate (ClO(4)(-))) and solvent (i.e. acetonitrile and 1 : 1 water-acetonitrile mixture) were adjusted to change the conjugation length and hydrophilicity of nanowires which resulted in change of the electrical properties and sensing performance. Temperature dependent coefficient of resistance (TCR) indicated that the electrical properties are greatly dependent on dopants and electrolyte where greater disorder was found in PSS(-) doped PEDOT nanowires compared to ClO(4)(-) doped nanowires. Upon exposure to different analytes including water vapor and volatile organic compounds, these nanowire devices displayed substantially different sensing characteristics. ClO(4)(-) doped PEDOT nanowires from an acetonitrile bath show superior sensing responses toward less electronegative analytes and followed a power law dependence on the analyte concentration at high partial pressures. These tunable sensing properties were attributed to variation in the conjugation lengths, dopant type and concentration of the wires which may be attributed to two distinct sensing mechanisms: swelling within the bulk of the nanowire and work function modulation of Schottky barrier junction between nanowire and electrodes.     

Simultaneous determination of the constituents in Al-Ge-Si alloys by inductively coupled plasma atomic emission spectrometry

An accurate method for determination of the constituents Ge, Si, In and Mg in Al–Ge–Si based compact alloys and foil materials by ICP atomic emission spectrometry is developed. The material samples were dissolved in nitric acid–hydrofluoric acid. Optimum parameters for the simultaneous measurement of the constituent elements are worked out. To compensate the time determined sensitivity fluctuations the analytical signal was corrected by a special procedure of external standardization.     

Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires

An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor–solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.     

On the high-temperature phase transition of Gd5Si2Ge2

The first-order monoclinic-to-orthorhombic (beta-->gamma) phase transition of the giant magnetocaloric material Gd(5)Si(2)Ge(2) was studied using in situ high-temperature single-crystal X-ray diffraction. A special crystal mounting procedure was developed to avoid crystal contamination by oxygen or nitrogen at high temperatures. The elastic beta-->gamma transformation occurs at 300-320 degrees C during heating, and it is reversible during fast and slow heating and slow cooling but irreversible during rapid cooling. Contrary to theoretical predictions, the macroscopic distribution of the Si and Ge atoms remains the same in both the orthorhombic gamma-polymorph and the monoclinic beta-phase. It appears that interstitial impurities may affect stability of both the monoclinic and orthorhombic phases. In the presence of small amounts of air, the beta-->gamma transformation is complete only at 600 degrees C. The interslab voids, which can accommodate impurity atoms, have been located in the structure, and an effect of partially filling these voids with oxygen or nitrogen atoms on the beta-gamma transition is discussed.     

Electronic Structure of Fe+X Alloys (X = Si, Ge, Co)

The electronic structure of Fe–Ge, Fe–Si, and Fe–Co alloys has been investigated by X-ray photoelectron spectroscopy. In Fe–Ge alloys with less than 10 at.% Ge, the Fe–Ge bond is mainly formed by the Fe 4sp- and Ge 4p-electrons. The results obtained for this system are identical to those for the Fe–Si system. The form of the valence band reflects the density distribution of both iron d-electronic states the and p-electronic states of the second component, having more extended density distribution of valence electrons. In FeCo alloys, strong spatial localization of d-electron density takes place in the vicinity of the corresponding atoms, which is stronger on the iron atoms compared to pure iron; the valence band has a two-band structure reflecting the density distribution of the d-states of each component. X-ray photoelectron spectroscopy data are in good agreement with kinetic data for the alloys.     

Determination of Si,Al, Ti,Fe and Zr in glass sand samples by 14 MeV neutron activation analysis

Fast neutron activation analysis technique was applied for the determination of Si, Al, Ti, Fe and Zr in glass sand rock samples. The samples and standards were irradiated with a mono-energetic neutron flux of 10⁸n · cm^– · s^–1. Pneumatic facility was used. The gamma activities from samples and standards were counted using a 30 cm³ Ge(Li) detector, with FWHM of 2.9 keV at 1.332 MeV, coupled to an on-line computer facility.     

Phasen mit Diamant-Unterstruktur in ternären Beryllium-Legierungen

Zusammenfassung In den Systemen Be–Cu–Mg, Be–Cu–Al, Be–Cu–Si, Be–Cu–Zn, Be–Cu–Ge, Be–Cu–In wurden ternäreLaves-phasen mit dem kubischen Cu₂Mg-Strukturtyp gefunden. Der Dreistoff Be–Co–Si zeigt eine ternäre Phase mit Cl- oder B32-Typ.

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In the systems Be–Cu–Mg, Be–Cu–Al, Be–Cu–Si, Be–Cu–Zn, Be–Cu–Ge, Be–Cu–In ternaryLaves phases with the cubic Cu₂Mg structure are found. The ternary system Be–Co–Si shows a ternary phase with the C1 or B32 type.

     

Template assisted electrodeposition of germanium and silicon nanowires in an ionic liquid

In this paper we report for the first time on the room temperature template synthesis of germanium and silicon nanowires by potentiostatic electrochemical deposition from the air- and water stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py(1,4)]Tf(2)N) containing GeCl(4) and SiCl(4) as a Ge and Si source, respectively. Commercially-available track-etched polycarbonate membranes (PC) with an average nominal pore diameter of 90-400 nm were used as templates. Ge and Si nanowires with an average diameter corresponding to the nanopores' diameter and lengths of a few micrometres were reproducibly obtained. Structural characterization of the nanowires was performed by EDX, TEM, HR-SEM and Raman spectroscopy. Despite the rough surface of the nanowires, governed mostly by the original shape of the nanopore's wall of the commercially-available PC membrane, preliminary structural characterizations demonstrate the promising prospective of this innovative elaboration process compared to constraining high vacuum and high temperature methods.     

Quantitative profiling of SiGe/Si superlattices by time-of-flight secondary ion mass spectrometry: the advantages of the extended Full Spectrum protocol

The abundance of work on SiGe-based devices demonstrates the importance of the compositional characterization of such materials. However, Secondary Ion Mass Spectrometry (SIMS) characterization of SiGe layers often suffers from matrix effects due to the non-linear variation of ionization yields with Ge content. Several solutions have been proposed in order to overcome this problem, each having its own limitations such as a restricted germanium concentration range, or a weak sensitivity to dopants or impurities. Here, we studied the improvements brought by an alternative protocol: the extended Full Spectrum protocol, which states proportionality between the composition of the secondary ion beam and that of the actual material. Previous studies on this protocol showed that it was extremely precise and reproducible for Ge quantification in a permanent regime, because of minimized matrix effects. In this study we thus investigated its accuracy for the simultaneous quantitative depth profiling of both matrix elements (Si, Ge) and impurities (B, C or P) in strained SiGe/Si superlattices by comparing results with those from more classic protocols. The profiles provided by the extended Full Spectrum protocol were found to be accurate, and to exhibit better properties than classic protocols in terms of signal/noise ratio and signal stability, along with a slight enhancement in depth resolution.     

芘分子共价修饰的硅纳米线制备及其发光性能表征

将功能分子共价链接于硅纳米线表面,是发展硅纳米线性能,获得新的硅纳米线器件材料的重要手段.但是对硅纳米线表面的修饰却存在产生不可控制的表面氧化层的缺点,因此有必要发展一种温和的新方法.本文通过羟基(—OH)与硅纳米线表面Si—H键反应生成Si—O—C键,从而在硅纳米线表面引入功能分子.并通过芘醇分子在硅纳米线表面的固定化,证明了这一方法能够温和地实现对硅纳米线表面的共价键修饰.     

Measurement of trace impurities in high purity materials

Neutron activation analysis was used for the determination of 29 trace impurities is high-purity semiconductor grade Ge and Si. In order to determine very low contents of uranium and thorium,²³⁹Np and²³³Pa activation products were separated using anion exchange and LaF₃ coprecipitation methods. The impurity contents were found to be very low, and therefore their adverse effects would be negligible.     

Highly ordered MnO2 nanowire array thin films on Ti/Si substrate as an electrode for electrochemical capacitor

AAO/Ti/Si substrate was successfully synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow nanowire arrays. The ordered MnO₂ nanowire arrays with about 40 nm diameters had been directly fabricated on AAO/Ti/Si substrate by direct current (DC) electrodeposition. The microstructure of the nanowire arrays was investigated by field-emission scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Their electrochemical characterization was performed using cyclic voltammetry in 0.5 M Na₂SO₄ aqueous solution. The synthesized MnO₂ nanowires had amorphous nature until 400 °C. The deal capacitive behavior was obtained when the as-prepared sample was heat-treated at 200 °C. The specific capacitance of the electrode was about 254 F/g.     

Structural, magnetic, and magnetoresistive properties of electrodeposited Ni5Zn21 alloy nanowires

Ni5Zn21 alloy nanowires were fabricated through template-assisted electrochemical deposition method. The morphology and microstructures of as-deposited nanowires were determined by field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), electron diffraction (ED), and electron probe microanalysis (EPMA). The accurate composition was measured via induced coupling plasma atomic emission spectroscopy. SEM results show that Ni5Zn21 nanowires are deposited in most of the nanopores of the template, and they are continuous and dense throughout the whole length. The XRD result demonstrates that the nanowires are mainly composed of a cubic gamma phase Ni5Zn21 alloy, but there also exists a trace of Zn-rich eta phase. HRTEM and ED reveal that the alloy nanowires are polycrystalline with the crystallite size of several tens of nanometers. EPMA of a single nanowire illustrates that there exist Ni-rich microzones in as-deposited nanowires. Subsequent magnetic measurements of the array also confirmed the existence of them. In addition, it can be further inferred that the shape of Ni-rich microzones is probably barlike or disklike, from the anisotropy of zero field cooling/field cooling (ZFC/FC) curves as well as the vortex magnetization behavior of the Ni5Zn21 nanowire array. The low-temperature magnetoresistance of the Ni5Zn21 nanowire array was also measured. Giant magnetoresistance instead of anisotropic magnetoresistance is suggested to be responsible for contributing to the magnetoresistance.