Multifluxon dynamics in driven Josephson junctions

The dynamics of fluxons in a long Josephson junction driven by time-varying nonuniform bias currents are described by a generalization of the sine-Gordon equation. This equation has solitary wave solutions which correspond to current vortices or quantized packets of magnetic flux in the junction. As with the sine-Gordon equation, multifluxon solutions may be demonstrated for the long Josephson junction. Our numerical calculations show that several fluxons may be launched or annihilated at the end of a junction. We also show multiple steady state conditions which correspond to one or more flux quanta trapped in the junction.     

Fluxon interaction in a long Josephson junction

Fluxon interaction in a long Josephson junction with bias current and losses is investigated by means of a perturbational approach. A simple analytical theory of the congelation (bunching) of unipolar fluxons is presented. Asymptotic results are confirmed by numerical solutions. It is shown that a system of congealed fluxons reflects from an open end of the junction without being destroyed.     

Electron transport in self-assembled polymer molecular junctions

A molecular junction of a poly(p-phenyleneethynylene)s derivative with thioacetate end groups (TA-PPE) was fabricated by self-assembling. Nanogap electrodes made by electroplating technique was used to couple thiol end groups of TA-PPE molecules. Room temperature current-voltage characteristics of the molecular junction exhibited highly periodic, repeatable, and identical stepwise features. First-principles calculations suggest that one possibility for the equidistant step is due to the opening of different conducting channels that corresponds to the unoccupied molecular orbitals of the polymer in the junction. It is interesting to see that an 18 nm long polymer is of quantized electronic structures and behaves like a quantum transport device.     

Some Analyses of Radiation Effects on PNP Silicon Devices

Nuclear irradiation of pnp junctions shows a pronounced change on their output electrical characteristics. Theoretical analysis, using computer programming (TRANSRAD), shows that exposing silicon transistors to nuclear radiation (neutrons, protons, electrons and gamma-rays) causes the devices to lose most of their forward gain factor. For all the analyzed irradiation conditions both junction leakage current and breakdown voltage are shown to increase pronouncely. The damage effect is found to be function of radiation fluence and energy.     

沟槽型发射极SiGe异质结双极化晶体管新结构研究

提出了一种沟槽型发射极SiGe异质结双极化晶体管新结构. 详细分析了新结构中沟槽型发射极的引入对器件性能的影响,并对其机理进行研究. 新型发射极结构通过改变发射极电流路径使电阻分区并联,在不增大结电容的前提下,有效减小发射极电阻,提高器件的频率特性. 结果表明,新结构器件的截止频率和最大振荡频率分别增加至100.2 GHz和134.4 GHz,更重要的是沟槽型发射极结构的引入,在提高器件频率特性的同时,不会降低器件的电流增益,也不会增加结电容,很好实现了频率特性、电流增益和结电容之间的折中. 对沟槽型发射极进行优化设计,改变侧墙高度和侧墙宽度. 沟槽型发射极电阻不受侧墙高度改变的影响,频率性能不变;侧墙宽度增加,频率性能降低. 关键词： SiGe 异质结双极化晶体管 沟槽型发射极 发射极电阻     

Vortices in a Josephson junction sandwiched between two superconducting waveguides

For a Josephson junction magnetically coupled to the superconducting waveguides enclosing it, solutions to the equation for the difference of the Cooper pair phases over the Josephson junction are found and the corresponding magnetic field values are calculated. Two gaps imposing an upper limit for the vortex velocity are found for free vortices (moving without dissipation). Existence conditions are found for fast vortices in the two high-velocity allowed regions. The dependence of the transport current on vortex velocity is established in cases where the current flows through the Josephson junction only or through the entire structure. A reverse current phenomenon is discovered in which vortices inside allowed velocity regions move opposite to the usual direction.     

Asymmetrical solutions and role of thermal fluctuations in dc current driven extended Josephson junction

Extended Josephson junction driven by dc bias current is studied numerically. Two types of solutions, symmetrical and asymmetrical, are found. The current–voltage characteristic (IVC) is calculated. The symmetrical solutions form main hysteretic IVC and asymmetrical ones create an additional branch. Depending on the bias current value periodic, quasiperiodic and chaotic modes of the junction motion was observed. Dynamics of the junction affected by thermal fluctuations was analyzed. Stability of different states of the junction is discussed.     

微波场中Josephson结的微波发射与吸收研究

采用数值仿真方法,研究微波场中约瑟夫森结微波感应台阶处的功率特性。发现微波场中约瑟夫森结不止吸收辐射,也发射辐射的情况。得到微波辐照和结电阻对功率吸收和发射的影响规律。结果表明,处于发射功率的状态对应的偏置电流范围占整个台阶总电流范围的比例可以趋于50%。这一发现对约瑟夫森结理论和应用研究具有重要的意义。     

Negative differential resistance in a molecular junction of carbon nanotube and benzene

We propose a novel molecular junction with single-walled carbon nanotubes as electrodes bridged by a benzene molecule, in which the electrodes are saturated by different terminations (C-, H- and N-). It is found that the different terminations at the carbon nanotube ends strongly affect the electronic transport properties of the junction. The current-voltage (I-V) curve of the N-terminated carbon nanotube junction shows a more striking nonlinear feature than that of the C- and H-terminated junctions at smal...     

Thermopower and conductance for a graphene p-n junction

The thermopower and conductance in a zigzag graphene p-n junction are studied by using the nonequilibrium Green's function method combined with the tight-binding Hamiltonian. Our results show that the conductance and thermopower of the junction can be modulated by its width, the potential drop, and the applied perpendicular magnetic fields. A narrow graphene p-n junction shows insulating characteristics, and its thermopower is much larger than that of the wider one around the Dirac point. The insulating characteristic of the junction decreases as the width increases. In particular, with increasing junction width or the potential drop, the first conductance plateau is strongly enhanced and the thermopower is inverted around the Dirac point. A perpendicular magnetic field strongly suppresses the conductance and enhances the thermopower in the p-n region. The influence of edge vacancy defects on the conductance and thermopower is also discussed. Our results provide theoretical references for modulating the electronic and thermal properties of a graphene p-n junction by tuning its geometry and working conditions.     

Folded world sheets and the orientable string

Classical solutions for the open relativistic string with a single junction are examined and a new class of kinked solutions presented. An interpretation of the phenomena of reverse parametrisation on one arm is offered in terms of oriented chains and the consequence that this has for folded world sheets is discussed. A physical interpretation for certain junction sites is presented through interaction of the string with an external field.     

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.     

Effects of charge on gravitational decoupled anisotropic solutions in f(R) gravity

This paper is devoted to studying charged anisotropic static spherically symmetric solutions through gravitationally decoupled minimal geometric deformation technique in f(R) gravity. For this purpose, we first consider the known isotropic Krori–Barua solution for f(R) Starobinsky model in the interior of a charged stellar system and then include the effects of two types of anisotropic solutions. The corresponding field equations are constructed and the unknown constants are obtained from junction conditions. We analyze the physical viability and stability of the resulting solutions through effective energy density, effective radial/tangential pressure, energy conditions, and causality condition. It is found that both solutions satisfy the stability range as well as other physical conditions for specific values of charge as well as model parameter and anisotropic constant. We conclude that the modified theory under the influence of charge yields more stable behavior of the self-gravitating system.     

Electron Transport Properties of Two-Dimensional Si_1P_1 Molecular Junctions

We focus on two new 2D materials, i.e., monolayer and bilayer silicon phosphides(Si_1 P_1). Based on the elasticscattering Green's function, the electronic-transport properties of two-dimensional monolayer and bilayer AuSi_1 P_1-Au molecular junctions are studied. It is found that their bandgaps are narrow(0.16 eV for a monolayer molecular junction and 0.26 eV for a bilayer molecular junction). Moreover, the calculated current-voltage characteristics indicate that the monolayer molecular junction provides constant output current(20nA) over a wide voltage range, and the bilayer molecular junction provides higher current(42nA).     

有机发光二极管的热分析与热设计

采用基于计算流体动力学的热学模拟仿真与瞬态热学测试技术分析了OLED的热学特性,研究并讨论了输入功率、面板取向、风速等实际应用变量对OLED面板结温的影响。研究结果表明,OLED的结温与衬底及封装盖表面存在明显的温度梯度,且此温度梯度随输入电流增加大幅增大。OLED的热学特性与面板取向、气流速度密切相关。     

First-principles study of the electronic structure and transport properties of armchair graphene nanoribbons with adsorbed super-halogen LiF2 and super-alkali Li3 clusters

The electronic structure and quantum transport properties of pristine armchair graphene nanoribbons (AGNRs) and AGNRs adsorbing super-halogen LiF₂ and super-alkaline Li₃ clusters (Li₃/AGNRs/LiF₂) were investigated using density functional theory and non-equilibrium Green's function calculations. It was found that LiF₂ and Li₃ clusters are stably adsorbed on the AGNRs, and the adsorption of Li₃ and LiF₂ endows AGNRs with the characteristics of n-type and p-type semiconductors, respectively. The Li₃/AGNRs/LiF₂ structure reduces the band gap and the turn-on voltage, and improves the transmission coefficient of the ANGRs device. This structure also exhibit the rectification characteristics of a pn junction with the forward bias current greater than the reverse bias current. This shows that adsorption of super-alkali and super-halogen clusters in different regions of AGNRs is a feasible approach for obtaining AGNRs with pn junction characteristics.     

硅基双势垒金属-绝缘层-金属-绝缘层-半导体隧道发光结

讨论了硅基双势垒金属－绝缘层－金属－绝缘层－半导体（MIMIS）隧道发光结的结构、制备方法及发光特性。所制备的样品最大发光亮度达到1．9cd/m^2、光谱的峰值波长移到了蓝绿光区，表明双势垒MIMIS隧道发光结的性能优于单势垒金属－绝缘层－半导体（MIS）隧道发光结。利用量子力学的共振隧穿效应对它作了较好的解释。     

Valence band electron tunneling in metal-oxide-silicon structures

Experimental results are presented for the substrate current appearing in thin oxide metal-oxide-silicon capacitors with a shallow n/p junction beneath the gate when a positive gate voltage in the tunneling regime is applied. The analysis of the current-voltage characteristics shows that for an oxide voltage drop lower than about 5 V the substrate current is due to electron tunneling from the silicon valence band. The dispersion relation in the energy range extending 3 eV below the oxide conduction band is determined from the voltage dependence of the current in the direct tunneling regime. An effective mass of about 0.8m_e is found near the edge of the oxide conduction band, while for lower energies a strong decrease of the effective mass is observed.     

Experimental investigation of the thermo-optical nonlinearity of solutions of synthesized rare-earth complexes

The large nonlinearities of the solutions of a new type of rare-earth complexes R_E(TTA)₄:HP, synthesized by ourselves, are experimentally demonstrated. The critical powers for the self-trapping of a laser beam in the solutions were measured. The dependence of the self-trapping critical powers on the absorptivity of the solutions and the type of solute complexes was found. The analysis for the experimental results shows that the effects of self-focusing and self-trapping of light in the solutions are not due to the change of molecular local density but the thermo-optical nonlinearities of the dissolved molecules themselves.     

Quantum fluctuations in a distributed Josephson junction and the spectral properties of Josephson oscillators

Within the framework of a tunneling Hamiltonian, we obtain an equation for the reduced density matrix to describe quasiclassical dynamics and fluctuation effects in distributed Josephson junctions for voltages comparable with the superconducting gap. For quasiclassical dynamics, we derive the Langevin equation describing in a self-consistent way the resistive state and fluctuations due to both the tunneling current and the electromagnetic field. Current-voltage characteristics of a Josephson oscillator are calculated in the high magnetic field approximation. The intensity and shape of the spectral line of radiation due to vortices moving in a distributed Josephson junction are found.