Adsorption states and Ga depletion during oxygen adsorption on clean polar GaAs surfaces

Ultraviolet photoelectron spectroscopy (UPS), thermal desorption spectroscopy (TDS) and Auger (AES) measurements were used to study oxygen adsorption on sputtered an annealed GaAs(111)Ga, (1̄1̄1̄)As, and (100) surfaces. Two forms of adsorbed oxygen are seen in UPS. One of them is associatively bound and desorbs at 400–550 K mainly as molecular O₂. It is most probably bound to surface As atoms as indicated by the small amounts of AsO which desorb simultaneously. The second form is atomic oxygen bound in an oxidic environment. It desorbs at 720–850 K in the form of Ga₂O. Electron irradiation of the associatively bound oxygen transforms it into the oxidic form. This explains the mechanism of the known stimulating effect of low energy electrons on the oxidation of these surfaces. During oxygen exposure a Ga depletion occurs at the surface which indicates that oxygen adsorption is a more complex phenomenon then is usually assumed. The following model for oxygen adsorption is proposed: oxygen impinges on the surface, removes Ga atoms and thus creates sites which are capable of adsorbing molecular oxygen on As atoms of the second layer and are surrounded by Ga atoms of the first layer. This molecular oxygen is stable and simultaneously forms the precursor state for the dissociation to the oxidic form.     

The adsorption of oxygen on gold

The oxidation of gold has been studied under UHV conditions by AES, XPS, and TDS. The previously reported adsorbed oxygen state, which formed by heating the sample above 600 K in 10^?5 Torr of oxygen and which remained after subsequent heating to 1100 K in vacuo, has been shown to result from the reaction of oxygen with silicon diffusing from the bulk. No oxygen adsorption was detected on a clean sample for oxygen pressures up to 10^?4 Torr and sample temperatures between 300–600 K. Chemisorption of oxygen atoms could be induced by placing a hot platinum filament close to the sample during exposure to oxygen. The activation energy for desorption of this oxygen state was estimated from the thermal desorption spectra to be about 163 kJ mol^?1. The chemisorbed oxygen atoms and the oxygen associated with silicon were distinguished by different O(1s) binding energies (529.2 and 532.3 eV respectively) and by different O(KVV) Auger fine structure.     

Electron spectroscopic characterization of oxygen adsorption on gold surfaces: II. Production of gold oxide in oxygen DC reactive sputtering

Gold oxide is produced by oxygen DC reactive sputtering in a UHV compatible chamber. It is subsequently characterized by High Resolution Electron Energy Loss, Auger and X-ray Photoelectron Spectroscopies. It is demonstrated that the oxide is of the Au₂O₃ type (auric oxide) and that it decomposes under thermal treatment. Au₂O (aurous oxide) is a possible intermediate of this reduction.     

Electron spectroscopic characterization of oxygen adsorption on gold surfaces: I. Substrate impurity effects on molecular oxygen adsorption in ultra high vacuum

Tentative adsorption on clean gold (110) and (111) crystals of molecular oxygen in the pressure range 10 ^?10 to 10 ^?5 Torr, at a temperature varying between 100 and 800 K is reported together with the subsequent characterization of the surfaces by High Resolution Electron Energy Loss, Auger and X-ray Photoelectron Spectroscopies. It is found that oxygen does not adsorb in these UHV conditions, except when a contaminant is present on the surface. Such an interaction with a low level silicon impurity is described.     

Valence band studies of clean and oxygen exposed GaAs(100) surfaces

We found, by correlating band bending, ultraviolet photoemission spectroscopy, and partial yield spectroscopy measurements, that Fermi level pinning at midgap of n-type GaAs(110) is caused by extrinsic states. The exact nature of these states is not yet clear, but the surfaces with Fermi level pinning were strained as evidence by a smeared valence band emission. This smearing was removed by as little as one oxygen per 10⁴ to 10⁵ surface atoms. This implies that the oxygen has very long range effects in causing spontanesous but small rearrangement of the surface lattice and removing surface strains. When about 5% of a monolayer of oxygen is adsorbed, a major change in the electronic structure takes place. Again, the oxygen coverage is very small, which suggests long range effects now leading to a fairly large rearrrangement of the surface lattice. Finally, from comparing the oxygen induced emission for exposures greater than 10⁷ L O₂, with the spectra from gas photoemission measurements on molecular oxygen, we suggest that the oxygen is chemisorbed as a molecule on the (110) surface of GaAs.     

Abnormal adsorption behavior of dimethyl disulfide on gold surfaces

Adsorption of dimethyl disulfide (DMDS) on gold colloidal nanoparticle surfaces has been examined to check its binding mechanism. Differently from previous results, DMDS molecules adsorbed on the gold surface at high concentration showed the S–S stretching band at 500 cm⁻¹ in surface-enhanced Raman scattering (SERS) spectra, which indicates the presence of intact adsorption of DMDS molecules. However, it was found that the S–S bond of disulfides was easily cleaved on the gold surface at low concentration. These behaviors were not observed for diethyl disulfide (DEDS) or diphenyl disulfide (DPDS). Our results indicate that DMDS molecules with the shortest alkyl chains on the gold surface can be inserted into self-assembled monolayers (SAMs) without the S–S bond cleavage during self-assembly due to insufficient lateral van der Waals interaction and the low adsorption activity of disulfides, whereas DEDS with longer alkyl chains or DPDS with the weak disulfide bond dissociation energy would not. These unusual DMDS adsorption behaviors were examined by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). We also compared the bonding dissociation energy of the S–S bonds of various disulfides by means of a density functional theory (DFT) calculation.     

Lithium adsorption on hot oxygen covered tungsten surfaces

The mean residence times τ of lithium particles on oxygen covered tungsten surfaces were measured accurately over a wide temperature range (1200 < T < 1900 K) by the beam modulation technique with a lock-in analyzer. A predominant monocrystalline W(100) structure was obtained by recrystallization of a polycrystalline tungsten ribbon. The residence time was determined as a function of the oxygen coverage θ and the temperatureT of the surface. The desorption energy l and the preexponential factor τ₀, calculated from the Arrhenius equation, are not only dependent on the amount of adsorbed oxygen but also on the oxygen structure. Apparently the desorption parameters l and τ₀ are correlated. An increasing desorption energy l is connected to a decreasing “vibration period” τ₀ whereby the influence on the residence time is partly compensated.     

Field-ion microscopy of GaAs and GaP

Clean surfaces of GaAs and GaP were studied by field-ion microscope (FIM). Field-ion images with ordered surfaces were first obtained in pure hydrogen, neon-50% hydrogen and pure neon gases at 78 K, by using channeltron electron multiplier arrays (CEMA). The field-ion images of GaAs were quite similar to those of GaP with respect to the surface structure and the image contrast. They showed the anisotropies of the ion emission and the surface structure between the [111] and $\text{[}\text{1}\text{1}\text{1}\text{]}$ orientations. Ring steps expected from a spherical surface were observed on the (111) and {100} planes, but not on the $\text{[}\text{1}\text{1}\text{1}\text{]}$ and {110} planes. The regional brightness of the FIM patterns was discussed in terms of the Knor and Müller model and the atomic and electronic structures of the surface. The image field of these crystals was much lower than that of metals usually used in FIM. For example, the image field strength for the hydrogen and GaAs system was about 1.1 V/Å. The reduction of the field necessary to image was also discussed in terms of the field penetration effect.     

ESCA studies of oxygen adsorption on nickel

A metallic nickel foil was studied by ESCA. The Ni 2p electron spectrum was characteristic of a mixture of nickel oxide and metallic nickel. Two ox     

LEED studies of adsorption on vicinal copper surfaces

As a means for studying the role of atomic steps in adsorption phenomena LEED has been used to investigate the properties of vicinal copper surfaces. Single crystalline surfaces were cut at angles up to 20° from the (100) pole along [001] and [011&#x0304;] zones. The diffraction patterns obtained for the clean surfaces and after adsorption of oxygen, nitrogen ions, carbon and sulphur are described. The emphasis of the paper is on the method of interpretation of the geometry of the patterns, which may be done by straightforward kinematic analyses. In the case of nitrogen it is found that if the steps are widely separated the structure of the layer adsorbed on the terrace is the same as that on the low index surface. When the step spacing is small, and comparable with the crystalline parameter of the adsorbed layer, modifications occur which give rise to different superlattices which extend over several terraces. Adsorption of sulphur on 〈11〉 steps can produce a change in the periodicity of the adsorbed layer parallel to the step direction. The study of diffraction patterns for vicinal surfaces with different step spacings may provide an interesting technique for verifying the interpretation of patterns for low index surfaces.     

Ellipsometric studies of adsorption reactions on clean surfaces

The ellipsometric effects measured upon adsorption in the monolayer range are discussed. In general there are two possible contributions, the effect of the adsorbed layer itself and the effect due to a change in the substrate surface induced by the adsorbed layer. The latter effect occurs mainly in the case of chemical adsorption.The ellipsometric measurements on a number of clean semiconductor surfaces are treated and the results are compared with those obtained by other methods, e.g. electron energy loss spectroscopy and ultra-violet photon spectroscopy.     

Thermal and photochemical reactivity of oxygen atoms on gold nanocluster surfaces

Reduction of oxidized gold nanoclusters by exposures to foreign gases and irradiation of UV photons has been investigated using X-ray photoelectron spectroscopy. Gold nanoclusters with narrow size distributions protected by alkanethiolate ligands were deposited on a TiO₂(1 1 0) surface with dip coating. Oxygen plasma etching was used for removal of alkanethiolate ligands and oxidization of gold clusters. The oxidized gold clusters were exposed to CO, C₂H₂, C₂H₄, H₂, and hydrogen atoms. Although, C₂H₄ and H₂ did not show any indications of reduction of oxidized gold clusters, CO, C₂H₂, and hydrogen atoms reduced the oxides on gold cluster surfaces. Among them, hydrogen atoms were most effective for reduction. Irradiation of UV photons around 400 nm could also reduce the oxidized gold clusters. The photochemical reduction mechanism was proposed as follows. The photo-reduction was initiated by electronic excitation of gold clusters and oxygen atoms activated reacted with carbon atoms at the surfaces of gold clusters. Carbon species were likely absorbed in gold clusters or remained at the boundaries between gold clusters when gold clusters agglomerated during oxygen plasma exposures. As the photochemical reduction progressed, carbon atoms segregated to the surfaces of gold clusters.     

Controlled adsorption of cytochrome c to nanostructured gold surfaces

Herein, we present a novel method based on the use of the symmetrical T4 bacteriophage capsid as a scaffold for preparing the gold-coated iron ternary core/shell nanostructure. Results showed that the thick gold shell was obtained to effectively protect Fe core from oxidation. Magnetic measurements showed that the nanocomposites were superparamagnetic at room temperature with a blocking temperature of about 35?K. At 3?K, its coercivity of 1142.86 Oe was larger than the existing experimental values. The magnetic property of Au/T4 was also tested, demonstrating the source of the magnetic sample arising from the Fe core only. The absorption spectrum of the Fe@Au/T4 complex was measured and compared with gold/virus. Different thickness gold shells were controlled in the synthesis by tuning the Au salt addition. On the basis of results and discussion, we further speculated the general growing mechanism of the template-supported Fe@Au process.     

ENDOR-investigations of iron doped GaAs and GaP

From ENDOR-measurements of GaAs:Fe³⁺ the symmetries and hyperfine parameters of three groups of neighbour nuclei have been obtained. The values of ||², r ^–3 and of the electric field gradients at the sites of the neighbour nuclei have been determined for GaAs:Fe³⁺ and GaP:Fe³⁺. The comparison of our results with those of NMR-investigations indicates the Fe³⁺-ion to be an interstitial impurity surrounded by four groupV atoms in a tetrahedral arrangement.     

Low temperature adsorption of water on cleaved GaAs(110) surfaces

The adsorption and desorption of water on UHV-cleaved GaAs(110) surfaces was studied using synchrotron-excited photoelectron spectroscopy. Water was adsorbed at T = 100 K. Desorption was studied during heating to room temperature. At low coverages, dissociated species are observed followed by molecular adsorption. Molecular water is desorbed at T = 160 K. The dissociated species are also mainly desorbed after heating to room temperature. The chemical changes are accompanied by substrate binding-energy shifts, reflecting the movement of the Fermi level at the surface.     

Atom-probe field-ion microscopy of GaAs and GaP

The atom-probe field-ion microscope (atom-probe FIM) was applied for the first time to GaAs and GaP which belong to the III–V compound semiconductors. The general character of the pulsed field-evaporation of GaAs and GaP was quite similar. Ga field-evaporated predominantly in the form of singly charged ions. As and P also field-evaporated mainly as singly charged ions, but their abundances were small compared with Ga⁺. It appears that As (or P) atoms can field-evaporate more easily in the form of AsO⁺ (or PO⁺) in the presence of oxygen on the surface. In all experiments, GaAsⁿ⁺ and GaPⁿ⁺ were rarely detected. After chemical etching the surfaces were covered with oxide films and various oxide ions were detected. The abundance of oxide ions dramatically decreased after field evaporation in hydrogen. No distinct difference between the 〈111〉 orientations of these materials which have zinc-blende structure could be observed. Most of the experimental results obtained were explained in terms of the existing theory of field evaporation. It was concluded that field penetration effects have a considerable influence on the field evaporation processes of these materials as well as on the field ionization processes.     

Effect of chlorine on the adsorption of oxygen on Cu and Ag surfaces

Based on XPS and UVPS studies, it is shown that oxygen is preferentially adsorbed molecularly in the singlet state on Cu and Ag surfaces containing presorbed chlorine. Adsorption of chlorine on Cu and Ag surfaces containing presorbed atomic oxygen causes a disappearance of the oxygen. Extended Hückel calculations predict the observed behaviour.     

Anion antisite defects in GaAs and GaP

The electronic properties of anion antisite defects and the related ideal cation vacancies are calculated based on tight-binding Hamiltonians and using a novel recursion method. For the antisite defects symmetric A₁ states are found in the upper part of the fundamental gaps, and for the ideal vacancies T₂ states are found in the lower part of the gaps. These results for antisite defects compare favorably with recent ESR experiments.     

A model of oxygen adsorption at liquid copper surfaces

A model of O-adsorption at liquid metal surfaces has been constructed, using liquid Cu as an example. The modeling approach used is similar to the regular solution scheme previously used successfully for modeling the adsorption/segregation behavior of metal alloys, in that the internal energy of the system is evaluated by nearest neighbor bond energies. In the model, the adsorption of oxygen in the near-surface region is allowed to occur at both surface and sub-surface sites. The model predicts a variety of possible adsorption characteristics, including the possibility of first order adsorption transitions which involve the formation of a 2-dimensional surface oxide, and different sequences for the occupancy of surface and sub-surface adsorption sites. In particular, by fitting the model to the experimental dependence of Cu surface energy on O-partial pressure, it is possible to conclude that O-adsorption in that case most likely occurs by the occupancy of sub-surface sites.