Electronic structure of Si(111) surfaces

We report on new angle-resolved photoemission studies of Si(111) 2 × 1 and 7 × 7 surfaces. The emission from the 2 × 1 surface shows much structure. For normal emission the energy positions are insensitive to the photon energy in the range 19–27 eV. The emission has been interpreted as a probe of the surface density of states, SDOS, including both surface states, resonances and bulk-like states. The SDOS was also calculated as a function of parallel momentum k_∥ for a model of the Si(111) 2 × 1 surface obtained from energy minimization considerations. We identify emission from the dangling bond band, which has a positive dispersion of 0.6 eV, and also emission from surface resonances which have some character of the compressed and stretched back bonds. There are also other predicted surface resonances that correspond to experimental peaks which have not been identified in previous work. Except for the dangling bond band, the surface resonances are limited in k_∥ space, so that it is not possible to follow these resonance bands over all angles. Maximum intensity for the normal emission from the dangling bond is obtained at 23 eV, while the emission from the lowest s-like states monotonically increases towards 30 eV photon energy. When annealing the cleaved 2 × 1 surface to the 7 × 7 reconstructed surface, the spectra broaden significantly. The intensity of the dangling bond decreases and we see a very small metallic edge.     

Study of Ag/Si(111) submonolayer interface: I. Electronic structure by angle-resolved UPS

Angle-resolved ultraviolet photoelectron spectra have been measured for well defined Ag/Si(111) submonolayer interfaces of (1) $\text{Si(111)(}\text{3}\text{×}\text{3}\text{)R30°-Ag}$, (2) “Si(111)(6 × 1)-Ag”, and (3) Ag/Si(111) as deposited at room temperature. Non-dispersive and very narrow (FWHM ～ 0.4–0.5 eV) Ag 4d derived peaks are found at 5.6 and 6.5 eV below the Fermi level for surface (1) and at 5.3 and 6.0 eV for surface (2). Dispersions of sp “binding” states in the energy range between E_F and Ag 4d states have been precisely determined for surface (1). Electronic structures similar to those of the Ag(111) surface, including the surface state near E_F, have been observed for surface (3).     

Giant core-exciton effects on Si(111) 7 × 7 surfaces

We present the first direct experimental evidence for a large surface influenced core-exciton effect on silicon. The Si(111) 7 × 7 L_2,3 absorption edge has been studied with core-level electron energy loss (ELS) and X-ray photoemission spectroscopy (XPS). An excitonic shift of ～1–2 eV have been found for transitions from Si(2p) to empty surface states.     

Comparative AES and RHEED study of the formation of Pd silicide on clean and oxide covered Si(100) and (111) surfaces

The formation and epitaxial orientation of Pd silicide on clean and native oxide covered Si(100) and (111) surfaces was studied by Auger electron spectroscopy (AES) and reflection high energy electron diffraction (RHEED). Pd was vapor deposited in UHV on to the substrates up to thicknesses of about 6 nm. On clean Si substrates, ultra-thin Pd deposits reacted to form Pd₂Si already at room temperature, as detected by a characteristic splitting of the Si LVV Auger peak. However, a polycrystalline structure with very small crystallite sizes was indicated by diffuse ring patterns in RHEED. When the initial thickness of the Pd deposit exceeded about 3 nm, the diffraction ring pattern of unreacted metal developed. During annealing of room temperature deposits of Pd, the (100) and (111) substrates behaved differently. Larger crystallites formed on Si(100), but the films remained polycrystalline, though textured. On Si(111), virtually perfect epitaxial re-orientation of the silicide was found. When the substrates were initially covered with native oxide of about 2 nm thickness, silicide formation started at about 200°C, resulting in polycrystalline, but strongly textured Pd₂Si. Upon further annealing at temperatures up to 600°C, an additional phase of epitaxially oriented Pd₂Si developed on Si(111), similar to that on clean Si(100). In all experiments, extended annealing at temperatures above 250°C caused segregation of Si to the surface. This was accompanied by the development of an additional peak in the Auger electron spectra at about 313 eV, which we assign to a plasmon loss of δE = 17 eV in the Si overlayer, being excited by Pd Auger electrons of energy 330 eV.     

Correlation of electronic and optical transitions: Mo(CO)6 adsorbed on clean and K-preadsorbed Si(111)7 × 7

Electron energy loss spectroscopy (EELS) is used to measure the electronic structure of adsorbed Mo(CO)₆ molecules on clean and potassium-preadsorbed Si(111)7 × 7 at 82 K. The electronic structure of physisorbed MoCCO)₆ is found to be not significantly (within 0.1 eV) perturbed from that of free molecules. The implication of electronic EELS measurements to surface photochemistry is discussed in this paper.     

Optical properties of dangling-bond states at cleaved silicon surfaces

The spectral dependence of surface photovoltage and surface photoconductance both under continuous illumination as well as LEED I/V spectra were studied with cleaved Si(111)-2 × 1 surfaces at 130 K. Between 0.23 and 0.5 eV a doubly peaked absorption band was found with opposite sign compared to the SPV and SPC signals at higher photon energies. This band is due to electronic transitions from occupied to empty dangling-bond states located at the raised and the lowered rows of atoms in the 2 × 1 reconstruction, respectively. This absorption shows a pronounced dependence on the polarization of the incident light which correlates with the spatial symmetry of the dangling-bond states. Anneals at up to 500 K remove the low-energy absorption peak and equalize the 2 × 1 reconstruction: The homogeneous Si(111)-2 × 1 structure exhibits a buckling of 0.3 Å and a dangling-bond absorption with a threshold at 0.42 eV and a maximum at 0.47 eV. An anneal at 750 K, forming the 7 × 7 structure, destroys the peak of opposite sign in SPV and SPC and only leaves a broad tail with a threshold of 0.32 eV.     

The bonding of oxygen to Al(111)

Oxidation of the Al(111) surface is a two-stage process in which the formation of an ordered oxygen overlayer precedes the creation of a bulk-like amorphous oxide. An electronic structure calculation is reported here for the clean and oxygen-covered Al(111) surface and for bulk A1₂O₃. The calculation uses an atomic-orbital basis and the metal surface is modelled by an infinite two-dimensional crystal, containing seven layers of aluminium atoms. Oxygen atoms occupy three-fold sites, with an Al-O separation of 1.9 Å. The oxygen 2p resonance in the (1 × 1) chemisorbed overlayer is about 3 eV wide, compared to 1.9 eV for an equivalent isolated layer of oxygen atoms unhybridized with the metal. The valence band of A1₂O₃ is about 1.5 eV wider than the chemisorbed oxygen resonance, but in both cases most of the states are concentrated in the top 1.5 eV of the band. The results are related to available ultraviolet photoemission spectra, including the recent angular-resolved spectra of Martinson and Flodström.     

Low-dimensional nanostructures and fullerene films on semiconductor surface

The morphology and atomic structures of C₆₀ fullerene films on a Bi(0001)/Si(111)-7 × 7 surface and adsorption of fluorofullerene C₆₀F _x molecules on a Si(111)-7 × 7 surface have been studied by scanning tunneling microscopy/spectroscopy and low-energy electron microscopy under ultra high-vacuum conditions. It has been shown that initial nucleation of C₆₀ islands on the surface of an epitaxial Bi film occurs on double steps and domain boundaries, while tunnel spectra do not exhibit any significant charge transfer to the lowest unoccupied molecular orbital states. Fluorofullerene molecules allow local (at the nanoscale level) modification of Si surface through local etching.     

Si(111)表面吸附氢会形成双氢化相吗?

用热脱附谱研究了原子氢在Si(111)表面的吸附,得到了两个吸附状态。从脱附谱特性同Si(100)/H系统的相似性,可以推测氢在Si(111)表面也存在单氢化相和双氢化相两种状态。单氢化相主要是顶位吸附所形成的,而双氢化相的形成则可以用McRae所提出的Si(111)(7×7)表面原子结构的三角形二聚物层错模型来解释。 关键词：     

Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces

External differential reflection measurements were carried out on clean Si(100) and (110) surfaces in the photon energy range of 1.0 to 3.0 eV at 300 and 80 K. The results for Si(100) at 300 K showed two peaks in the joint density of states curve, which sharpened at 80 K. One peak at 3.0 ± 0.2 eV can be attributed to optical transitions from a filled surface states band near the top of the valence band to empty bulk conduction band levels. The other peak at 1.60 ± 0.05 eV may be attributed to transitions to an empty surface states band in the energy gap. This result favours the asymmetric dimer model for the Si(100) surface. For the (110) surface at 300 K only one peak was found at 3.0 ± 0.2 eV. At 80 K the peak height diminished by a factor of two. Oxygen adsorption in the submonolayer region on the clean Si(100) surface appeared to proceed in a similar way as on the Si(111) 7 × 7 surface. For the Si(110) surface the kinetics of the adsorption process at 80 K deviated clearly. The binding state of oxygen on this surface at 80 K appeared to be different from that on the same surface at 300 K.     

Oxygen adsorption on the LaB6(100), (110) and (111) surfaces

Oxygen adsorption on the LaB₆(100), (110) and (111) clean surfaces has been studied by means of UPS, XPS and LEED. The results on oxygen adsorption will be discussed on the basis of the structurs and the electronic states on the LaB₆(100), (110) and (111) clean surfaces. The surface states on LaB₆(110) disappear at the oxygen exposure of 0.4 L where a c(2 × 2) LEED pattern disappears and a (1 × 1) LEED pattern appears. The work function on LaB₆(110) is increased to ～3.8 eV by an oxygen exposure of ～2 L. The surface states on LaB₆(111) disappear at an oxygen exposure of ～2 L where the work function has a maximum value of ～4.4 eV. Oxygen is adsorbed on the surface boron atoms of LaB₆(111) until an exposure of ～2 L. Above this exposure, oxygen is adsorbed on another site to lower the work function from ～4.4 to ～3.8 eV until an oxygen exposure of ～100L. The initial sticking coefficient on LaB₆(110) has the highest value of ～1 among the (100), (110) and (111) surfaces. The (100) surface is most stable to oxygen among these surfaces. It is suggested that the dangling bonds of boron atoms play an important role in oxygen adsorption on the LaB₆ surfaces.     

Initial stage of the adsorption of fluorofullerene molecules on Si surface

Spatially resolved images of an individual C₆₀F₁₈ fluorofullerene molecule on Si(100) − 2 × 1 surface have been obtained using scanning tunneling microscopy. Scanning tunneling microscopy results and ab initio calculations show that the fluorofullerene molecules interact with the Si(100) − 2 × 1 surface with F atoms pointing down towards the surface. The adsorption energy of a C₆₀F₁₈ molecule on Si(100) − 2 × 1 surface is ∼12.1 eV, which is much higher than the adsorption energy of the same molecule on Si(111) − 7 × 7 surface (6.65 eV). C₆₀F₁₈ molecules are located in the troughs in-between the dimer rows occupying the four-dimer site on Si(100) − 2 × 1 surface.     

Low energy electron loss spectroscopic study of Pd-Si(111) system

Effect of Pd deposition on a clean Si(111) surface was studied by ELS and AES methods for submonolayer [1 ML = 7.8 × 10¹⁴atomscm^-2forSi(111)] to several tens of monolayers. ELS spectra showed that the electronic nature of Pd-Si bonding for ? 1 ML of Pd coverage is different from Pd₂Si formed for ? 3 ML. Namely, it was shown that some critical thickness for Pd on Si(111) exist for inducing interfacial intermixing reaction at room temperature.     

Si(111)解理面氧吸附后Si L2,3VV俄歇谱形的分析

对Si(111)解理清洁表面及其在氧吸附后测得的SiL_2,3VV俄歇谱进行数字积分、背底扣除及退自卷积后,得到了解理清洁表面在氧吸附前后的部分跃迁态密度。分析这两者之间的差别,结合别人的实验及理论计算结果表明:氧同时以分子形式及原子形式进行吸附,在吸附过程中,还同时形成氧化硅的价态。 关键词：     

Structural and electronic model of negative electron affinity on the Si/Cs/O surface

Structural and electronic models are proposed which correlate Goldstein's LEED, Auger, photo-emission, plasmon, and desorption data for negative electron affinity (NEA) on Si(100) surfaces. In the structural model, the surface Si atoms group into adjacent rows of surface “pedestals” and surface “caves”. Their density is 3.4 × 10¹⁴ cm^?2 each, as inferred from the LEED 2 × 2 reconstruction pattern and other data. Adsorbed Cs resides in fourfold coordination with Si atop the pedestals. Adsorbed oxygen is completely submerged in the caves of aperture 2.98Å to give a Cs-O dipole length of 2.9Å. Similar structural arguments show why Cs must be adsorbed before O₂, and why Si(111) does not exhibit NEA. In the electronic model, the surface dielectric constant, 5.3. obtained from the surface plasmon energy, 7 eV, is used to compute the dipole length from the final work function, 0.9 eV. It is 2.8Å in excellent agreement with the dipole length computed from the above structural model. Some properties of the “induced” surface states in the presence of Cs and O are also described.     

Low energy electron diffraction and electron spectroscopy studies of the clean (110) and (100) titanium dioxide (rutile) crystal surfaces

Low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), electron energy loss (ELS) and ultraviolet photoemission spectroscopies (UPS) were used to study the structures, compositions and electron state distributions of clean single crystal faces of titanium dioxide (rutile). LEED showed that both the (110) and (100) surfaces are stable, the latter giving rise to three distinct surface structures, viz. (1 × 3), (1 × 5) and (1 × 7) that were obtained by annealing an argon ion-bombarded (100) surface at ~600,800 and 1200° C respectively. AES showed the decrease of the $\text{O(510 eV)}\text{Ti(380 eV)}$ peak ratio from ~1.7 to ~1.3 in going from the (1 × 3) to the (1 × 7) surface structure. Electron energy loss spectra obtained from the (110) and (100)?(1 × 3) surfaces are similar, with surface-sensitive transitions at 8.2, 5.2 and 2.4 eV. The energy loss spectrum from an argon or oxygen ion bombarded surface is dominated by the transition at 1.6 eV. UPS indicated that the initial state for this ELS transition is peaked at ?0.6 eV (referred to the Fermi level E_F in the photoemission spectrum, and that the 2.4 eV surface-sensitive ELS transition probably arises from the band of occupied states between the bulk valence band maximum to the Fermi level. High energy electron beams (1.6 keV 20 μA) used in AES were found to disorder clean and initially well-ordered TiO₂ surfaces. Argon ion bombardment of clean ordered TiO₂ (110) and (100)?(1 × 3) surfaces caused the work function and surface band bending to decrease by almost 1 eV and such decrease is explained as due to the loss of oxygen from the surface.     

Adsorbate band structure of bromine on Pd(111) studied by angle resolved ultraviolet photoemission

The photoemission spectra from Pd(111) and from the Pd(111)-Br(√3 × √3)R30° system are reported; some new features for the clean surface are detected and assigned. The principal effect of the Br overlayer on the direct transitions is a general intensity reduction. Three adsorbate derived features are detected; one at 4 eV with no dispersion is probably an adsorbate-induced feature of the metal, and the other two which disperse are assigned as Br 4p_x, (4.5 eV) and Br 4p_z (6 eV) at $\text{}\text{?}$gG.     

Mechanisms for oxygen adsorption on the Si(110) surface studied by Auger electron spectroscopy

Oxygen adsorption on the Si(110) surface has been studied by Auger electron spectroscopy. For a clean annealed surface chemisorption occurs, with an initial sticking probability of ～6 × 10^?3. In this case the oxygen o_kll signal saturates and no formation of SiO₂ can be detected from an analysis of the Si L_2,3VV lineshape. With electron impact on the surface during oxygen exposure much larger quantities are adsorbed with the formation of an SiO₂ surface layer. This increased reactivity towards oxygen is due to either a direct effect of the electron beam or to a combined action of the beam with residual CO during oxygen inlet, which creates reactive carbon centers on the surface. Thus in the presence of an electron beam on the surface separate exosures to CO showed adsorption of C and O. For this surface subsequent exposure in the absence of the electron beam resulted in additional oxygen adsorption and formation of SiO₂. No adsorption of CO could be detected without electron impact. The changes in surface chemistry with adsorption are detectable from the Si L_2,3VV Auger spectrum. Assignments can be made of two main features in the spectra, relating to surface and bulk contributions to the density of states in the valence band.     

Second harmonic response of the Si(111)7 × 7 surface

Optical second harmonic generation spectra have been experimentally obtained from a clean Si(111) 7 × 7 in two different polarization configurations isolating the rotational anisotropic and isotropic contributions. The energy of the fundamental photon is varied from 0.8 eV to 2.5 eV. For comparison, we also use a microscopic formulation based on the semi-empirical tight binding method to evaluate the nonlinear surface susceptibility tensor χ(2ω). Good agreement between theory and experiment is obtained with respect to the number of resonances, their position in energy, and surface or bulk character.     

Scanning tunneling microscopy/spectroscopy study of adsorption of C<Subscript>60</Subscript>F<Subscript>36</Subscript> molecules on the 7 × 7-Si(111) surface

Spatially resolved images of an individual C₆₀F₃₆ fluorofullerene molecules on Si(111)-7 × 7 surface have been obtained by means of scanning tunneling microscopy/spectroscopy (STM/STS). The presence of isomers with different symmetry (T, C ₃, C ₁) has been revealed in STM investigation of initial adsorption stage of C₆₀F₃₆ on silicon surface Si(111)-(7 × 7). The adsorbed fluorofullerene molecule can occupy any adsorption site of silicon surface (corner site, faulted half, unfaulted half) that indicates for strong molecule-substrate interaction. The HOMO-LUMO gap of the adsorbed C₆₀F₃₆ molecules have been estimated from current image tunneling spectroscopy (CITS) and z(V) with engaged feedback measurements. The value of HOMO-LUMO gap observed experimentally was 3 eV. The C₆₀F₃₆ molecules adsorption on Si(111)-(7 × 7) surface was stable and kept equilibrium configuration during several hours.