Identification of various luminescence centers in CuI films by cathodoluminescence technique

CuI films are prepared by different techniques at room temperature. An expansion of band gap energy was observed for the thin films prepared by pulse laser deposition technique. Various luminescence centers are identified in CuI films and different mechanisms are proposed for cathodoluminescence at different centers.     

Deposition of copper iodide thin films by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods

In this paper, we report structural, morphological, electrical studies of copper iodide (CuI) thin films deposited onto glass substrates by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) methods. CuI thin films were characterized for their structural, morphological and wettability studies by means of X-ray diffraction (XRD), FT-Raman spectroscopy, scanning electron microscopy (SEM), optical absorption, and contact angle measurement methods. Thickness of thin films was 1 ± 0.1 μm measured by gravimetric weight difference method. The CuI thin films were nanocrystalline, with average crystal size of ～60 nm. The FT-IR study confirmed the formation of CuI on the substrate surface. SEM images revealed the compact and cube like structure for CuI thin films deposited by CBD and SILAR methods, respectively. Optical absorption study revealed optical energy gaps as 2.3 and 3.0 eV for CBD and SILAR methods, respectively. Wettability study indicated that CuI thin films deposited by SILAR method are more hydrophobic as compared to CBD method.     

含缺陷的二维CuI光电性质的第一性原理计算

基于密度泛函理论计算了本征缺陷时二维CuI的光电特性,分析了能带结构以及复介电函数.本征2D CuI的带隙值为1.56 eV,为直接带隙半导体;I和Cu缺陷的引入使2D CuI的带隙值小,Cu缺陷的引入并未改变2D CuI的带隙方式,而I缺陷的引入使2D CuI变为间接带隙半导体.光学性质计算结果表明本征2D CuI的静介电函数为2.47, I缺陷的引入对2D CuI的静介电函数影响较小,但是在Cu缺陷时2D CuI的静介电函数急剧增大.     

Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 Å. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle ∼156°) while that on glass it is hydrophilic (contact angle ∼88°). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices.     

Raman scattering from CuBr and CuI

Detailed temperature-dependent Raman spectra of CuI and CuBr are reported for the first time. Spectra have been recorded between room temperature and 6K. Peaks arising from scattering by the zone-center optic phonon modes have been identified and their frequencies compared with those determined by neutron scattering and infrared measurements. The LO phonon energy in CuBr is found to reflect the negative thermal expansion at low temperatures while the TO phonon frequency does not follow this behavior. Second-order features of the CuI spectrum are identified using available phonon dispersion curves.     

Optical characteristics of particles produced using electroerosion dispersion of titanium in hydrogen peroxide

Titanium oxide particles are produced using electric-discharge dispersion of titanium in aqueous solution of hydrogen peroxide. Electron vacuum microscopy, X-ray diffraction, and diffuse reflection spectroscopy are used to study the morphology, composition, and optical characteristics of the erosion particles. It has been demonstrated that the particles consist of titanium and titanium oxides with different valences. The edge of the optical absorption is located in the UV spectral range. The band gap is 3.35 eV for indirect transitions and 3.87 eV for direct allowed transitions. The band gap decreases due to the relatively long heating in air at a temperature of 480–550°C, so that powder oxide compositions can be obtained, the optical characteristics of which are similar to optical characteristics of anatase. The erosion products are completely oxidized to rutile after annealing in air at a temperature of 1000°C.     

Crystal growth and luminescence properties of CuI single crystals

Recently, much attention has been attached to the material of cuprous iodide (CuI) single crystals. In this paper, a detailed study of the variation in the nucleation density and the growth of CuI crystals in silica gel as a function of the concentration of feed solution, pH of gel, gel aging time, growth temperature and volume of the feed solution is presented. The optimum conditions for growth of large size CuI single crystals in gel are: pH 5, concentration of complex 0.244 M, gel aging 72 h, temperature 45 °C. A simple procedure for increasing the size of the crystals is adopted and the CuI single crystal with the size of 4 mm³ is obtained. Also, the photoluminescence (PL) spectrum of as-grown CuI crystals in silica gel is evaluated by comparing its PL spectra with that of CuI crystals grown by solvent evaporation method. The results could provide a useful clue to further improve the properties of CuI single crystals.     

CsCu2I3薄膜的制备及其吸收谱的研究

本文介绍了用热蒸发技术制备ＣｓＣｕ２Ｉ３薄膜的方法，根据ＣｓＣｕ２Ｉ３的低温吸收谱计算出其激子参数；谱分析表明，ＣｓＣｕ２Ｉ３的电子和激子激发定域在ＣｕＩ４＾２－组成的双链结构之中是导致其光谱复杂性的主要原因。     

氢化纳米硅薄膜中氢的键合特征及其能带结构分析

对氢化纳米硅薄膜中氢的键合特征和薄膜能带结构之间的关系进行了研究.所用样品采用螺 旋波等离子体化学气相沉积技术制备，利用Raman散射、红外吸收和光学吸收技术对薄膜的 微观结构、氢的键合特征以及能带结构特性进行了分析.Raman结果显示不同衬底温度下所生 长薄膜的微观结构存在显著差异，从非晶硅到纳米晶硅转化的衬底温度阈值为200℃.薄膜中 氢的键合特征与薄膜的能带结构密切相关.氢化非晶硅薄膜具有较高的氢含量，因键合氢引 起的价带化学位移和低衬底温度决定的结构无序性，使薄膜呈现较大的光学带隙和带尾宽度 .升 关键词： 氢化纳米硅 螺旋波等离子体 能带结构     

Influence of temperature annealing on optical properties of SrTiO3/BaTiO3 multilayered films on indium tin oxide

We have prepared SrTiO₃/BaTiO₃ thin films with multilayered structures deposited on indium tin oxide (ITO) coated glass by a sol-gel deposition and heating at 300-650 °C. The optical properties were obtained by UV-vis spectroscopy. The films show a high transmittance (approximately 85%) in the visible region. The optical band gap of the films is tunable in the 3.64-4.19 eV range by varying the annealing temperature. An abrupt decrease towards the bulk band gap value is observed at annealing temperatures above 600 °C. The multilayered film annealed at 650 ° C exhibited the maximum refractive index of 2.09-1.91 in the 450-750 nm wavelength range. The XRD and AFM results indicate that the films annealed above 600 ° C are substantially more crystalline than the films prepared at lower temperatures which were used to change their optical band gap and complex refractive index to an extent that depended on the annealing temperature.     

Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

In this paper we present the effect of low substrate temperature on structural, morphological, magnetic and optical properties of Ba-hexaferrite thin films. Films were deposited on single crystal Silicon (1 0 0) substrate employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, magnetic and optical properties are found to be strongly dependent on substrate temperature. The low substrate temperatures (room temperature to 200 °C) restrict the formation of larger grains. For the higher substrate temperature i.e., 400 °C, the grain size of the deposited thin film are much larger. The film grown at low substrate temperature do not show any anisotropy. As the substrate temperature is increased, the easy axis of the films alinged itself in the direction parallel to the film plane whereas the hard axis remained in the perpendicular direction. The higher substrate temperature caused the uniaxial magnetic anisotropy, which is very important in magnetic recording devices. The saturation magnetization and optical band gap energy values of 62 emu/cc and 1.75 eV, respectively, were achieved for the film of thickness 500 nm deposited at 400 °C. Higher values of coercivity, squareness and films thickness are associated with the growth of larger grains at higher substrate temperature.     

Preparation and characterization of CuI/PVA–PEDOT:PSS core–shell for photovoltaic application

In the present paper nano polymer composite of CuI/PVA blended with PEDOT:PSS has been prepared by growing CuI nano particles inside aqueous solution of PVA. The XRD characterization illustrated the growth of CuI nano crystals of 22–33 nm. The optical absorption showed direct transition with an energy band gap equals to 1.18 eV and 1.3 eV for colloidal and thin solid films respectively. The PL investigation illustrates a quenching with increasing PEDDOT:PSS concentration. The results are interpreted according to energy confinement enhanced by plasmon–exciton interaction of CuI–PVA/PEDOT:PSS core–shell. The frequency dependence of conductivity suggested hopping conduction where the bulk conductivity is thermally activated with an activation energy in the range varies from 0.07 to 0.46 eV by increasing PEDOT:PSS concentration. The cyclic voltammetry measurements have been performed to ascertain the position of both HOMO and LUMO levels which illustrated a movement of HOMO level toward vacuum level, with a decrease in the chemical band gap from 1.72 to 1.3 eV with increasing PEDOT:PSS concentration.     

Electrical conductivity studies of mixed phthalocyanine thin films

Thin films of mixed of Copper Phthalocyanine (CuPc) and Nickel Phthalocyanine (NiPc) are deposited onto a pure glass substrate by a simultaneous thermal evaporation technique at room temperature. The material D.C. electrical conductivity of films at room temperature and also films annealed at 523 K has been investigated. The optical absorption and band gaps of the films are also measured. The results show that the electrical resistance is lower for the mixed films compared with the pure samples and also the optical band gap decreases for the mixed samples compared to the pure samples.     

The reflection spectrum of cuprous chloride in the 4.5−30 eV range and the related band structure

The reflection spectrum of CuCl is measured on cleaved monocrystals, at low temperature, up to 30 eV. The main lines of different band schemes, proposed recently by theoretical approaches, are compared with characteristics features in the reflection spectra. All transitions at ?, between the three highest valence bands and the two lowest conduction bands are identified. The observation of transitions where the initial states are in 3sCl^- permits to determine critical points in the conduction bands. With the help of our experimental data we propose a band scheme for cuprous chloride.     

Effects of uniaxial stress on the excitons in single crystals of CuI: Comparison with thin films

We have investigated at low temperature the effects of uniaxial stress on single crystals of CuI, from different geometries. From the observed results, we deduce the deformation potentials and analyze by comparison the strain induced in thin films by the substrate.     

激光分子束外延方法生长的ZnO薄膜的发光特性

研究了不同温度和不同光激发强度下激光分子束外延方法生长的ZnO薄膜样品的发光性能,发现YAG脉冲激光激发,强度超过一定值时会在长波方向上出现一个新的发光峰,此峰可能起源于电子-空穴的复合。室温下氙灯激发的光谱中可以看到峰值位于381nm的近带边紫外发射峰和位于450nm的强的蓝绿带发射,根据光致发光激发光谱的特征给出了一个简单的蓝光发射模型。对比YAG脉冲激光激发和氙灯激发得到的实验光谱,我们认为不同的光谱特征和样品发光的激发机制有关,紫外峰发射需激发强度超过一定值才能观察到,而蓝带发射则在一定的激发强度下迅速饱和。     

Effect of CuI on the formation and properties of Te-based far infrared transmitting chalcogenide glasses

A series of Ge–Te–CuI far infrared transmitting chalcohalide glasses were prepared by traditional melt-quenching method and the glass-forming region was determined. Properties measurements include density, DTA, XRD, SEM, Vis–NIR and infrared (IR) transmission spectra. The results show that with the addition of CuI, the glass-forming ability is improved and nearly 30 mol% CuI can be dissolved into the Ge₂₀Te_80?x(CuI)_x glass system. The density and glass transition temperature of Ge–Te–CuI chalcohalide glasses are within the range 5.459–5.960 g cm^?3 and 150–184 °C, respectively. These glasses all have wide optical transmission window from 1.8 to 25 μm and offer an alternative solution for far infrared transmitting materials.     

Faraday laser at Rb 1529 nm transition for optical communication systems

We experimentally demonstrate a Faraday laser at Rb 1529 nm transition by using a performance-improved Rb electrodeless-discharge-lamp-based excited-state Faraday anomalous dispersion optical filter as the frequencyselective element. Neither the electrical locking scheme nor the additional frequency-stabilized pump laser are used. The frequency of the external-cavity diode laser is stabilized to the Rb 1529 nm transition, and the Allan deviation of the Faraday laser is measured by converting the optical intensity into frequency. The Faraday laser can be used as a frequency standard in the telecom C band for further research on metrology, microwave photonics, and optical communication systems.     

Temperature dependence of Raman linewidth and shift in CuI

The temperature dependence of the optical phonon linewidth and frequency shift in CuI has been measured in the temperature range of 4.2 ～ 300 K. Utilizing phonon dispersion curves obtained from neutron scattering measurements, the linewidths and frequency shifts are calculated in terms of three-phonon interactions proposed by Pine and Tannenwald. The experimental results for the change in linewidth and frequency with temperature are in good agreement with this theory.     

Theoretical and experimental study on the photoluminescence in BaTiO3 amorphous thin films prepared by the chemical route

A polymeric precursor method was used to synthesize BaTiO₃ amorphous thin film processed at low temperature. The luminescence spectra of BaTiO₃ amorphous thin films at room temperature revealed an intense single-emission band in the visible region. The visible emission band was found to be dependent of the thermal treatment history. Photoluminescence (PL) properties for different annealing temperatures were investigated. It was concluded that the intensity of PL is strongly dependent on both the heat treatment of the films and the presence of an inorganic disordered phase. Experimental optical absorption measurements showed the presence of a tail. These results are interpreted by the nature of these exponential optical edges and tails, associated with defects promoted by the disordered structure of the amorphous material. We discuss the nature of visible PL at room temperature in amorphous barium titanate in the light of the results of recent experimental and quantum mechanical theoretical studies. Our investigation of the electronic structure involved the use of first-principle molecular calculations to simulate the variation of the electronic structure in the barium titanate crystalline phase, which is known to have a direct band gap, and we also made an in-depth examination of amorphous barium titanate.