Radiation from silver films bombarded by low-energy electrons

Emission spectra from Ag films irradiated by low energy electrons (20–1500 eV) have been measured, and the results compared with theory. For relatively smooth films, two peaks in the spectra are resolved. One at 3.73 eV, the volume plasmon energy, is attributed to transition radiation and/or bremsstrahlung. The second, at about 3.60 eV, is very sensitive to surface roughness in both position and magnitude and is produced by roughness-coupled radiation from surface plasmons. For rough films, the roughness-coupled radiation dominates the emission. In addition to spectral shapes, the polarization of the radiation and its intensity as a function of electron energy were measured. The experimental results are compared with new calculations of roughness-coupled emission which account for most of our observations. They indicate that high wavevector roughness components play the dominant role in the emission process.     

Transition radiation from rough surfaces

The light emission of normally incident 77 keV electrons on silver surfaces of different roughness has been investigated. The roughness was quantitatively determined by measuring the scattered light of a normally incident laser beam. In addition to the transition radiation, which is expected for smooth surfaces, light emission of surface plasmons via surface roughness occurs. The shape and the intensity of the spectral distribution of this emission show a characteristic change with the surface roughness.     

Statistical properties of cooperative emission of an ensemble of nonisochronous electrons–oscillators

Effect of shot noise and energy spread of particles on the statistical properties of cooperative emission of an ensemble of nonisochronous electrons–oscillators is analyzed. The dependences of the rootmean-square deviation of the peak radiation power and the autophasing time on the number of particles are determined in the absence of the energy spread. Even a minor energy spread of 4% leads to a decrease in the maximum possible power of cooperative emission.     

高偏压金属─绝缘体─金属结的光发射

我们制作了一种可在６—１１Ｖ偏压范围内均匀发射可见光的新型金属—绝缘体—金属结型发光器件，其内层结构是Ａｌ－Ａｌ２Ｏ３－ＭｇＦ２－Ａｎ（Ｃｕ），其承受偏压、单位面积发光功率及相应的外量子效应高过迄今已知的Ｍ－Ｏ－Ｍ遂道结型发光器件．本文首次报导并论证了这一由Ｓｃｈｏｔｔｋｙ热电子所激发的光发射及其物理图象：Ｓｃｈｏｔｔｋｙ热电子在ＡＯ（Ｃｕ）－真空界面激发表面等离极化激元（ＳＰＰ）；Ａｕ（Ｃｕ）－真空界面的ＳＰＰ通过表面粗糙度与外光子耦合．这一图象与该器件的电流—电压（Ｉ—Ｖ）、电流—温度（Ｉ－Ｔ）关系及其发射光谱的主要特征一致．     

高功率微波沿面闪络击穿机制粒子模拟

针对高功率微波介质沿面闪络击穿物理过程,首先建立了理论模型,包括:动力学方程、粒子模拟算法、二次电子发射, 以及电子与气体分子蒙特卡罗碰撞模型、电子碰撞介质表面退吸附气体分子机制;其次,基于理论模型,编制了1D3V PIC-MCC程序,分别针对真空二次电子倍增、高气压体电离击穿和低气压面电离击穿过程,运用该程序仔细研究了电子和离子随时间演化关系、电子运动轨迹、电子及离子密度分布、空间电荷场时空分布、电子平均能量、碰撞电子平均能量、碰撞电子数目随时间演化关系、电子能量分布函数、平均二次电子发射率以及能量转换关系。研究结果表明:真空二次电子倍增引发的介质表面沉积功率只能达到入射微波功率1%左右的水平,不足以击穿;气体碰撞电离主导的高气压体电离击穿,是由低能电子（eV量级）数目指数增长到一定程度导致的,形成位置远离介质表面,形成时间为s量级;低气压下的介质沿面闪络击穿,是在二次电子倍增和气体碰撞电离共同作用下,由于数目持续增长的高能电子（keV量级）碰撞介质沿面导致沉积功率激增而引发的,形成位置贴近介质沿面,形成时间在ns量级。     

Conversion electron Mössbauerspectroscopy with very low energy (0 to 15 eV) electrons

A very intensive peak of low energy electrons (≤15 eV) appears in the electron energy spectrum, measured by a high transmission magnetic spectrometer, if a negative voltage of more than about 20 volts is applied to the Mössbauer absorber. The MB-spectrum of enriched stainless steel, recorded with these electrons, shows a high resonance effect of about 700% with countrates of 10³ sec^?1, compared to 750% and 60 sec^?1 at the K-edge. Two processes seem to be responsible with characteristic attenuation length of about 40 Å and about 400 Å. We conclude, that part of these electrons are produced directly by Mössbauer absorption and conversion, resulting in low energy Auger electron emission, showing a high surface sensitivity as well.     

Fast electron transport in ultraintense laser pulse interaction with solid targets by rear-side self-radiation diagnostics

We report on rear-side optical self-emission results from ultraintense laser pulse interactions with solid targets. A prompt emission associated with a narrow electron jet has been observed up to aluminum target thicknesses of 400 microm with a typical spreading half-angle of 17 degrees. The quantitative results on the emitted energy are consistent with models where the optical emission is due to transition radiation of electrons reaching the back surface of the target or due to a synchrotron-type radiation of electrons pulled back to the target. These models associated with transport simulation results give an indication of a temperature of a few hundred keV for the fast-electron population.     

Depth of generation of X-ray characteristic emission bands in solid targets

The factors responsible for the poor agreement between the experimental data on the depth of the generation of the Si L _2,3 X-ray emission band excited by an electron impact in SiO₂ layers and the results of the calculations performed in terms of the Borovskii-Rydnik phenomenological model modified for nonisotropic and nanostructured systems have been analyzed. It has been demonstrated that the most probable factor accounting for the disagreement is the effect of the roughness of the surface and interface of the SiO₂/Si system under investigation in the range of low energies of primary electrons and a decrease in the sensitivity and the accuracy in the measurements in the range of large thicknesses and high energies. Since no errors have been revealed in the calculation model used, it has been employed to calculate the dependence of the depth of generation of the L X-ray emission bands in Mg, Si, Ti, Cr, Fe, and Cu crystals on the energy of electrons of the primary electron beam.     

高偏压金属─绝缘体─金属结的光发射

我们制作了一种可在6-11V偏压范围内均匀发射可见光的新型金属-绝缘体-金属结型发光器件,其内层结构是Al-Al₂O₃-MgF₂-An(Cu),其承受偏压、单位面积发光功率及相应的外量子效应高过迄今已知的M-O-M遂道结型发光器件.本文首次报导并论证了这一由Schottky热电子所激发的光发射及其物理图象:Schottky热电子在AO(Cu)-真空界面激发表面等离极化激元(SPP);Au(Cu)-真空界面的SPP通过表面粗糙度与外光子耦合.这一图象与该器件的电流-电压(I-V)、电流-温度(I-T)关系及其发射光谱的主要特征一致.     

超热电子产生的靶后相干渡越辐射光谱实验研究

利用OMA光学多道分析仪测量了激光与薄膜靶相互作用中产生的辐射光谱，在靶后观察到红移的二次谐波发射. 这种二次谐波是v×B加热产生的、具有微脉冲结构的超热电子束在等离子体-真空边界产生的相干渡越辐射(CTR). 随着激光能量的增大，红移峰向长波方向移动，光谱同时发生展宽. 分析认为，等离子体临界面的迅速膨胀是导致二次谐波红移的主要原因. 随着预脉冲能量的增大，临界面膨胀速度增大，导致了发射峰更大的红移. 实验还测量了靶面法线方向的辐射光谱，观察到基频辐射的红移和展宽. CTR为诊断临界面的运动方向和速度提供了一种新的方法. 关键词： 相干渡越辐射 超热电子 超短超强激光 等离子体相互作用     

Total current spectroscopy

In total current spectroscopy (TCS) a beam of low energy (0–15 eV) electrons is directed upon a solid sample and secondary electron emission investigated by monitoring the current to the target, rather than by direct energy analysis of emitted electrons. A TCS signal is the derivative of the direct current with respect to the incident energy E₁ displayed as a function of that energy, and obtained experimentally in ultra high vacuum conditions using simple modulation and lock in amplification techniques. A typical experimental arrangement is described and factors influencing a typical spectrum outlined. A simple background theory is discussed and it is shown how TCS is a powerful tool for studying not only the surface and near surface regions, but also bulk physics. In particular the technique has already found application in studies of work function, chemi- and physisorption, epitaxy, interband transitions, densities of states, excitons, impurity atom excitation, plasmons, radiation damage and the measurement of thicknesses of very thin surface layers.     

介质材料二次电子发射特性对微波击穿的影响

以介质填充的平行板放电结构为例,本文主要研究了介质填充后微波低气压放电和微放电的物理过程.为了探究介质材料特性对微波低气压放电和微放电阈值的影响,本文采用自主研发的二次电子发射特性测量装置,测量了7种常见介质材料的二次电子发射系数和二次电子能谱.依据二次电子发射过程中介质表面正带电的稳定条件,计算了介质材料稳态表面电位与二次电子发射系数以及能谱参数的关系.在放电结构中引入与表面电位相应的等效直流电场后,依据电子扩散模型和微放电中电子谐振条件,分别探讨了介质表面稳态表面电位的大小对微波低气压放电和微放电阈值的影响.结果表明,介质材料的二次电子发射系数以及能谱参数越大,介质材料的稳态表面电位也越大,对应的微波低气压放电和微放电阈值也越大.所得结论对于填充介质的选择有一定的理论指导价值.     

Über die charakteristischen Energieverluste bei Elektronenstreuung an Si-Spaltflächen

The energy spectrum of electrons scattered inelastically at cleavage surfaces of silicon and germanium into Bragg reflection spots differs from that obtained by transmission by low lying characteristic energy losses. The dependence of their intensity on the order of the diffraction spots, on the surface roughness, and on the angle near the diffraction spot shows that they are due to surface plasma oscillations. The transmission energy spectrum is mainly due to the excitation of volume plasma oscillations.     

等离子体中相对论电子的同步曲率辐射特性研究

根据同步曲率辐射理论推导了在等离子体环境中,不同磁场条件下的相对论性电子的吸收系数和发射系数表达式，计算了电子的发射强度，并且在此基础上研究了同步曲率辐射机制的脉泽效应.研究了两种磁场位型，第一种是强度均匀但弯曲的磁场，第二种是偶极磁场，结果发现了一些偶极磁场下特有的辐射特性.考虑到在天体的环境下电子具有的不同的能谱分布，分别选用了三种典型的能谱分布(幂率分布，高斯分布，热分布)进行了研究，通过计算负吸收和脉泽放大效应在发射强度上的表现后， 发现在某些天体物理环境中，同步曲率辐射在等离子体中的确存在脉泽放大效应.这些研究结果对太阳系中行星外层辐射的研究和宇宙中的射电高亮温度等问题的研究可能提供有益的帮助. 关键词： 同步曲率辐射 负吸收 脉泽效应     

Monte Carlo方法计算低能电子作用下固体背散射电子发射及空间分布

应用Monte Carlo方法,对能量E₀≤5keV低能电子作用下固体Al、Cu、Ag、Au的背散射电子发射及表面空间分布作了计算.模型应用Mott散射截面及修正的Bethe方程分别描述低能电子在固体中的弹性和非弹性散射.计算了背散射电子能量分布、表面空间分布、深度分布和角分布规律及特征,还计算分析了背散射电子角分布与深度分布、表面空间分布及能量分布之间的关系,系统地描述了背散射电子的发射及分布规律.     

Possible evidence for heavy-ion-induced collective electron emission from solids

A peak has been observed for the first time in the angular distributions of low energy electrons (E_c<5 eV) emitted under heavy-ion bombardment of solids. The peak energy and angle coincide with the peak energy and angle predicted recently for collective electron emission in heavy-ion-solid collisions.     

托卡马克中等离子体频率附近的增强辐射现象

实验提出托卡马克中的等离子体频率附近的增强辐射现象与高能逃逸电子有关,但是辐射的机制尚未完全弄清。本文讨论了两种可能的机制。一种是诱发辐射,这是来自逃逸电子与波的反常迴旋共振。另一种是自发辐射,主要来自契仑柯夫共振。前者要求逃逸电子的能量比后者为大,因此,自发辐射理论更引人注意。在很宽的参数变化范围内对辐射率作了数值计算。对于等离子体频率大于迴旋频率的情况也作了讨论。 关键词：     

On the mechanism of photon emission from thin film tunnel structures

The light emission from Al−Al₂O₃−M planar tunnel diodes was investigated where M=Ag, Au or Cu. Experiments on smooth and periodically corrugated (holographic grating) substrates showed that the emitted light originates from surface plasmons scattered by the surface roughness and, probably, from the bremsstrahlung of tunneling electrons. All the three noble metals show qualitatively similar behaviour and their light emission can be described as the superposition of three independent sources. The quantum efficiency of radiation was found to be ≈10⁻⁵ photon/electron, close to the theoretical limit.

     

关于热电子发射理论的评述(Ⅲ)——动态表面发射中心

本文提出能解释热阴极中各种现象的动态表面发射中心模型。电子发射来源于一个原子集团。在这原子集团中,当运动着的电子具有瞬时的最高能量,或集团的原子核吸引力达到最小时,便产生电子发射。超额钡是提供高能电子的根源。氧则按其在集团中的相对数量和相对位置而分别起有益或有害的作用。虽然锶、钙、铝酸盐、钨酸盐等对发射只起次要的作用,但它们对蒸发、徙动、传递电子等却有影响。实用热阴极的发射不均匀性证明发射中心的存在,而发射的不稳定性,例如闪变噪声,显示出发射中心的动态特性。     

Surface core level shifts of Pt(111) measured with Y Mχ radiation (132.3 eV)

An Y anode was prepared in situ under UHV conditions and used for core level spectroscopy of Pt 4f levels of a clean and CO covered Pt(111) crystal. The Y Mχ photons of 132.3 eV energy and 0.45 eV half width were sufficiently surface sensitive in order to produce a large fraction of surface to bulk emission. The background of Auger and secondary electrons in the photoemission spectra was subtracted by use of an analogous spectrum excited by Mo Mχ radiation (193.3 eV). The Pt 4f spectra were fitted to Doniach-Šunjić line shapes and decomposed into surface and bulk contributions. The surface core level shift was found to be −0.37 and 0.63 eV for clean Pt(111) and CO covered Pt(111), respectively. The intensity of the clean Pt(111) surface peaks was zero after CO adsorption, hence all surface Pt atoms are affected by CO bonding. The ratio of bulk to surface peak intensity was 2.3. The half width of the CO related surface peak was twice that of the clean Pt surface peak consistent with the presence of two different adsorbed CO species.