The photoluminescence of ZnO thin films grown on Si (1 0 0) substrate by plasma-enhanced chemical vapor deposition

High-quality ZnO thin films have been grown on a Si(1 0 0) substrate by plasma-enhanced chemical vapor deposition (PECVD) using a zinc organic source (Zn(C₂H₅)₂) and carbon dioxide (CO₂) gas mixtures at a temperature of 180°C. A strong free exciton emission with a weak defect-band emission in the visible region is observed. The characteristics of photoluminescence (PL) of ZnO, as well as the exciton absorption peak in the absorption spectra, are closely related to the gas flow rate ratio of Zn(C₂H₅)₂ to CO₂. Full-widths at half-maximum of the free exciton emission as narrow as 93.4 meV have been achieved. Based on the temperature dependence of the PL spectra from 83 to 383 K, the exciton binding energy and the transition energy of free excitons at 0 K were estimated to be 59.4 meV and 3.36 eV, respectively.     

Properties of ZnO films grown on (0 0 0 1) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

In this paper, we compare the properties of ZnO thin films (0 0 0 1) sapphire substrate using diethylzinc (DEZn) as the Zn precursor and deionized water (H₂O) and nitrous oxide (N₂O) as the O precursors, respectively in the main ZnO layer growth by atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD) technique. Surface morphology studied by atomic force microscopy (AFM) showed that the N₂O-grown ZnO film had a hexagonal columnar structure with about 8 μm grain diameter and the relatively rougher surface compared to that of H₂O-grown ZnO film. The full-widths at half-maximum (FWHMs) of the (0 0 0 2) and () ω-rocking curves of the N₂O-grown ZnO film by double-crystal X-ray diffractometry (DCXRD) measurement were 260 and 350 arcsec, respectively, indicating the smaller mosaicity and lower dislocation density of the film compared to H₂O-grown ZnO film. Compared to H₂O-grown ZnO film, the free exciton A (FX_A) and its three phonon replicas could be clearly observed, the donor-bound exciton A⁰X (I₁₀):3.353 eV dominated the 10 K photoluminescence (PL) spectrum of N₂O-grown ZnO film and the hydrogen-related donor-bound exciton D⁰X (I₄):3.363 eV was disappeared. The electron mobility (80 cm²/V s) of N₂O-grown ZnO film has been significantly improved by room temperature Hall measurement compared to that of H₂O-grown ZnO film.     

Absorption spectra of GaN: film characterization by Urbach spectral tail and the effect of electric field

The absorption tail of undoped and Si-doped GaN films was investigated at different temperatures and under applied electric field. It was found that the spectral dependence of logarithm of absorption coefficient is combined of two linear functions: ln[(hν)]=C₁+(hν−E_g)/U₁ for hν<3.42 eV and ln[(hν)]=C₂+(hν−E_g)/U₂ for 3.44<hν<3.5 eV with Urbach energies U₁=400–470 meV and U₂=10–20 meV. The influence of an electric field effect on the absorption spectra follows the Dow and Redfield theory. It was shown that the intrinsic electric field about 10⁵ V/cm exists in our samples. The implemented analysis of the absorption spectra gives the qualitative method of film characterization.     

Low-temperature growth of epitaxial layers of ZnSe1−xTex solid solutions

The layers of ZnSe_1−xTe_x (0 < x < 1.0) solid solutions have been grown by liquid-phase epitaxy in a closed tube at 620–680 °C. Zinc chloride served as a solvent. ZnTe and ZnSe crystals were used as sources and substrates with orienting surfaces (110) and (111) for ZnSe and (110) for ZnTe. The composition of the grown layer was specified by the relative content of the ZnSe and the ZnTe in the solution and was controlled by X-ray analysis. The position of the exciton bands in the photoluminescence spectra of ZnSe_1−xTe_x over the interval 0.3 < x < 1.0 is in agreement with the free exciton energies calculated for these compositions. Relatively low-ohmic (of about 10² Ω cm) epitaxial layers of ZnSe_1−xTe_x solid solutions were grown.     

High-resolution photoluminescence studies of (211) CdTe grown on (211)B GaAs substrate

Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A⁰X) and donors (D⁰X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates.     

Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation

The Si 2p soft X-ray photoemission study of various oxidized surfaces (thermal oxidation and room temperature (RT) oxidation) shows the benefit derived from the use of high-energy resolution (70 meV). Interesting structural information can be retrieved from an analysis of the line widths of the oxides, suboxides, and elemental Si peaks. In particular the binding energy (BE) of elemental silicon layers adjacent to the oxidized layer can be distinguished from that of deeper silicon layers (the two prominent ‘interfacial' elemental Si lines are shifted by about +0.2 and −0.2 eV). These new data show a possible effect of oxygen second neighbors on elemental Si 2p binding energies. Moreover, changes in the oxide/suboxide line widths – as seen in a comparative study of the Si(1 1 1)-7×7 surface thermally oxidized in O₂ and exposed at RT to O₂ or H₂O – may be attributed to static disorder, i.e., variations in Si–O bond lengths.     

AFM investigation of step kinetics and hillock morphology of the {1 0 0} face of KDP

Step velocities and hillock slopes on the {1 0 0} face of KDP were measured over a supersaturation range of 0<σ<0.15, where σ is the supersaturation. The formation of macrosteps and their evolution with distance from the hillock top were also observed. Hillock slope depended linearly on supersaturation and hillock geometry. The two non-equivalent sectors exhibited different slopes and step velocities. AFM shows an elementary step height of 3.7 Å, or half the unit cell height, whereas previous interferometric experiments assumed the elementary step was a unit cell. Values of the step edge energy (), the kinetic coefficients for the slow and fast directions (β_S and β_F), and the activation energies for slow and fast step motion (E_a,S and E_a,F) were calculated to be 24.0 erg/cm², 0.071 cm/s, 0.206 cm/s, 0.26 eV/molecule, and 0.21 eV/molecule, respectively. Analysis of macrostep evolution including the dependence of step height on time and terrace width on distance were performed and compared to predictions of published models. The results do not allow us to distinguish between a shock wave model and a continuous step-doubling model. Analysis within the latter model leads to a characteristic adsorption time for impurities (λ⁻¹) of 0.0716 s.     

The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

GaAsSb ternary epitaxial layers were grown on GaAs (0 0 1) substrate in various Sb₄/As₂ flux ratios by solid source molecular beam epitaxy. The alloy compositions of GaAs_1−ySb_y were inferred using high-resolution X-ray symmetric (0 0 4) and asymmetric (2 2 4) glance exit diffraction. The non-equilibrium thermodynamic model is used to explain the different incorporation behavior between the Sb₄ and As₂ under the assumption that one incident Sb₄ molecule produces one active Sb₂ molecule. It is inferred that the activation energy of Sb₄ dissociation is about 0.46 eV. The calculated results for the incorporation efficiency of group V are in good agreement with the experimental data.     

Li conductivity in lithium niobate: silica glasses

Glasses of composition 65 mol% LiNbO₃:: 35 mol% SiO₂ have been shown to be Li⁺ ion conductors with a conductivity at 200°C > 1 × 10⁻⁵ (η cm)⁻¹ and an activation energy of 0.54 eV. The addition of approximately 0.1 mol% Fe₂O₃ leads to an enhancement of conductivity to ≈10⁻³ (η cm)⁻¹ at 200°C and an activation energy of 0.67 eV. The effect of Fe is shown to be in the control of microstructure in the glass, with Fe₂O₃ concentrations < 1 mol% acting as a grain growth inhibitors and larger concentrations acting as a nucleating agents. A model for this process based on the expected stoichiometry of the melt and the effect of Fe²⁺ and Fe³⁺ in charge compensation is in excellent agreement with experimental data from electron spin resonance.     

Indium content determination related with structural and optical properties of InGaN layers

We studied the structural and optical properties of a set of nominally undoped epitaxial single layers of In_xGa_1−xN (0<x0.2) grown by MOCVD on top of GaN/Al₂O₃ substrates. A comparison of composition values obtained for thin (tens of nanometers) and thick (≈0.5 μm) layers by different analytical methods was performed. It is shown that the indium mole fraction determined by X-ray diffraction, measuring only one lattice parameter strongly depend on the assumptions made about strain, usually full relaxation or pseudomorphic growth. The results attained under such approximations are compared with the value of indium content derived from Rutherford backscattering spectrometry (RBS). It is shown that significant inaccuracies may arise when strain in In_xGa_1−xN/GaN heterostructures is not properly taken into account. Interpretation of these findings, together with the different criteria used to define the optical bandgap of In_xGa_1−xN layers, may explain the wide dispersion of bowing parameters found in the literature. Our results indicate a linear, E_g(x)=3.42−3.86x eV (x0.2), “anomalous” dependence of the optical bandgap at room temperature with In content for In_xGa_1−xN single layers.     

Synthesis of Y2O3:Eu phosphors by bicontinuous cubic phase process

A novel approach for preparation of red-emitting europium-doped yttrium oxide phosphor (Y₂O₃:Eu) by using the bicontinuous cubic phase (BCP) process was reported in this paper. The BCP system was composed of anionic surfactant sodium bis(2-ethylhexyl)sulfosuccinate (AOT) and aqueous yttrium nitrate/europium nitrate solution. Energy dispersive spectrometer analysis revealed the homogeneous precipitation occurred in the BCP structure. Thermogravimetric analysis measurements indicated the precursor powder was europium-doped yttrium hydroxide, Y_1−xEu_x(OH)₃. Scanning electron microscopy micrographs showed the precursor powder had a primary size about 30 nm and narrow size distribution. After heat treatment in furnace above 700 °C for 4 h, high crystallinity Y₂O₃:Eu phosphors was obtained. However, the primary size of particles grew to 50–200 nm and the dense agglomerates with a size below 1 μm were formed. X-ray diffraction patterns indicated the crystal structure of precursor powders and Y₂O₃:Eu phosphors were amorphous and body-centered cubic structure, respectively. The photoluminescence analysis showed that the obtained Y₂O₃:Eu phosphor had a strong red emitting at 612 nm and the quenching started at a Eu concentration of 10 mol%. This study indicated that the BCP process could be used to prepare the highly efficient oxide-based phosphors.     

Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates

We have studied the impact of several Si selective epitaxial growth (SEG) process on the agglomeration of ultra-thin, patterned silicon-on-insulator (SOI) layers. Through a careful analysis of the effects of the in situ H₂ bake temperature (that followed an ex situ “HF-last” wet cleaning) and of the silicon growth temperature on the SOI film quality, we have been able to develop a low-temperature SEG process that allows the growth of Si on patterned SOI layers as thin as 3.4 nm without any agglomeration or Si moat recess at the Si window/shallow trench isolation edges. This process consists of an in situ H₂ bake at 650 °C for 2 min, followed by a ramping-up of the temperature to 750 °C, then some SEG of Si at 750 °C using a chlorinated chemistry (i.e. SiH₂Cl₂+HCl).     

Growth and properties of Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 single crystals directly from melt

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by a modified Bridgman method directly from melt using an allomeric Pb[(Mg_1/3Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal as a seed. X-ray diffraction (XRD) measurement confirmed that the as-grown PZNT91/9 single crystals are of pure perovskite structure. Electrical properties and thermal stabilization of PZNT91/9 crystals grown directly from melt exhibit different characters from those of PZNT91/9 crystals grown from flux, although segregation and the variation of chemical composition are not seriously confirmed by X-ray fluorescence analysis (XPS). The [0 0 1]-oriented PZNT91/9 crystals cut from the middle part of the as-grown crystal boules exhibit broad dielectric-response peaks at around 105 °C, accompanied by apparent frequency dispersion. The values of piezoelectric constant d₃₃, remnant polarization P_r, and induced strain are about 1800–2200 pC/N, 38.8 μC/cm², and 0.3%, respectively, indicating that the quality of PZNT crystals grown directly from melt can be comparable to those of PZNT91/9 single crystals grown from flux. However, further work deserves attention to improve the dielectric properties of PZNT crystals grown directly from melt. Such unusual characterizations of dielectric properties of PZNT crystals grown directly from melt are considered as correlating with defects, microinhomogeneities, and polar regions.     

Structural, thermal and dielectric studies on a new solution grown 4-dimethylaminopyridinium dihydrogen phosphate crystal

Single crystals of 4-dimethylaminopyridinium dihydrogen phosphate (DMAPDP) (C₇H₁₃N₂PO₄) were grown by the solvent evaporation method. The three-dimensional structure was solved by the single-crystal X-ray diffraction method which belongs to triclinic crystal system and the molecular arrangements in the crystal were studied. The thermal behaviour was investigated using differential scanning calorimetry (DSC) and no phase transition was identified in the temperature region −150 to 230 °C. The thermal parameters—thermal diffusivity (), thermal effusivity (e), thermal conductivity (K) and heat capacity (C_p) of DMAPDP were measured by an improved photopyroelectric technique at room temperature. Dielectric constant and dielectric loss of the grown crystal were evaluated for the frequency range 1–200 KHz in the temperature region 28–135 °C. The Vicker's hardness was measured as 42.2 for a load of 98.07 mN. The laser induced surface damage threshold of DMAPDP crystal was found to be 4.8 GW/cm² with nanosecond Nd:YAG laser.     

Etch studies on GaPO4 single crystals

Etch figures on gallium orthophosphate (GaPO₄) crystals are presented for the {0 0 1}, {0 1 0}, , and {1 0 1} faces. Primarily they are used in detecting possibly occurring domains of twinning. Generally, the etch figures of GaPO₄ show similarities as well as differences compared to those of low-quartz modifications of SiO₂ and AlPO₄.     

Growth and self-frequency doubling laser output of Nd : Ca4Gd0.275Y0.725O(BO3)3 crystal

In this letter, Nd : Ca₄Gd_0.275Y_0.725O(BO₃)₃ (Nd : GdYCOB) single crystal with good optical quality and large size has been grown by the Czochralski method. The absorption and fluorescence spectra have been measured. The self-frequency doubling (SFD) laser output of Nd : GdYCOB at 0.53 μm has been demonstrated when a Nd : GdYCOB crystal sample with dimensions of 3 mm×3 mm×7 mm (the phase-matched angle is θ=78.8°, Φ=90°) is pumped by a cw Ti : sapphire laser.     

Microstructure and ferroelectric properties of BaTiO3 films on LaNiO3 buffer layers by rf sputtering

We have fabricated LaNiO₃ and BaTiO₃ films using the rf sputtering method. The LaNiO₃ were deposited on Si substrates, demonstrating a (1 0 0) highly oriented structure and nanocrystalline characteristic with a grain size of 30 nm. The BaTiO₃ thin films were deposited on the LaNiO₃ buffer layers, and have exhibited a (1 0 0) texture with a thickness of 400 nm. A smooth interface is obtained between the LaNiO₃ bottom electrode and the BaTiO₃ film from cross-section observations by scanning electron microscopy. The bi-layer films show a dense and column microstructure with a grain size of 60 nm. Ferroelectric characterizations have been obtained for the BaTiO₃ films. The remnant polarization and coercive field are 2.1 μC/cm² and 45 kV/cm, respectively. The leak current measurements have shown a good insulating property.     

Simple hydrothermal preparation of -MnOOH nanowires and their low-temperature thermal conversion to β-MnO2 nanowires

Without the use of any extra surfactant or template, γ-MnOOH single crystalline nanowires were synthesized directly through the hydrothermal reaction between KMnO₄ and toluene in distilled water at 180 °C for 24 h; and β-MnO₂ single crystalline nanowires could be obtained just by calcination of the γ-MnOOH nanowires in air at 280 °C for 5 h. The as-prepared γ-MnOOH and β-MnO₂ nanowires were characterized by X-ray powder diffraction, atomic absorption spectroscopy, Fourier transformed infrared spectroscopy, scanning electron microscope, transmission electron microscope, high-resolution transmission electron microscope and selected area electron diffraction.     

High-temperature conductivity of solid and liquid CdTe

Conductivity of CdTe single crystals fabricated in our laboratory by vertical gradient freeze method was studied at temperatures 400–1200°C. Two clear slopes are seen — 0.7 eV in the solid and 4.6 eV in the liquid. Experimental value of electrical conductivity at the melting point 10 Ω⁻¹ cm⁻¹ was observed. A model explaining the experimental data is suggested.     

Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge

GaN films were deposited on sapphire(0 0 0 1) and Si(1 0 0) substrates by MOCVD using an atomic nitrogen source based on a dielectric barrier discharge (DBD) method. Molecule nitrogen and trimethylgallium (TMG) were separately delivered to the substrates. Wurtzite GaN films, with no trace of cubic GaN, were successfully grown on -Al₂O₃ substrates even at relatively low temperatures (<800°C). Sapphire substrate RMS roughness was 5.01 and 4.93 Å before and after the exposure to DBD N-source, respectively. This shows negligible irradiation damage of accelerated N₂⁺ ion as well as the effect of smoothening the substrate surfaces with DBD N-source. The PL results exhibited small luminescence at the spectral region of blue and UV but a luminescence around the yellow region (2.5 eV) was detected. This is caused by oxygen impurity from AES analysis.