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1.
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The Zintl phase Eu2Si was synthesized from elemental europium and silicon in a sealed tantalum tube in a high‐frequency furnace at 1270 K and subsequent annealing at 970 K. Investigation of the sample by X‐ray powder and single crystal techniques revealed: Co2Si (anti‐PbCl2) type, space group Pnma, a = 783.0(1), b = 504.71(9), c = 937.8(1) pm, wR2 = 0.1193, 459 F2 values and 20 variables. The structure contains two europium and one silicon site. 151Eu Mössbauer spectroscopic data show a single signal at an isomer shift of −9.63(3) mm/s, compatible with divalent europium. Within the Zintl concept electron counting can be written as (2Eu2+)4+Si4−, in agreement with the absence of Si‐Si bonding. Each silicon atom has nine europium neighbors in the form of a tri‐capped trigonal prism. The silicon coordinations of the Zintl phases Eu2Si, Eu5Si3, EuSi, and EuSi2 are compared.  相似文献   

3.
AMX compounds with the ZrBeSi structure tolerate a vacancy concentration of up to 50 % on the M-site in the planar MX-layers. Here, we investigate the impact of vacancies on the thermal and electronic properties across the full EuCu1−xZn0.5xSb solid solution. The transition from a fully-occupied honeycomb layer (EuCuSb) to one with a quarter of the atoms missing (EuZn0.5Sb) leads to non-linear bond expansion in the honeycomb layer, increasing atomic displacement parameters on the M and Sb-sites, and significant lattice softening. This, combined with a rapid increase in point defect scattering, causes the lattice thermal conductivity to decrease from 3 to 0.5 W mK−1 at 300 K. The effect of vacancies on the electronic properties is more nuanced; we see a small increase in effective mass, large increase in band gap, and decrease in carrier concentration. Ultimately, the maximum zT increases from 0.09 to 0.7 as we go from EuCuSb to EuZn0.5Sb.  相似文献   

4.
Unprecedented (Pb 4 )Cd(Pb 4 )Cd(Pb 4 )Cd(Pb 4 ) tetramers (see picture) are present in the structure of the title compound, in which they coexist with isolated Pb4 tetrahedra. Since Cs6Ge8Zn has the same stoichiometry as K6Pb8Cd but contains exclusively (Ge4)2Zn dimers, this can be viewed as a disproportionation reaction of the type (a).  相似文献   

5.
Experimental studies on compounds of alkali and alkaline earth metals with semi- and metametals have considerably broadened the basis for a discussion of the transition from metallic to ionic bonding. Current interest is focused mainly upon the elucidation of the principles governing the structure of such compounds which are subject to a wide range of variation within this class of materials. A new definition of the term Zintl phase is proposed after consideration of available findings.  相似文献   

6.
The ternary Zintl phase EuMgGe was synthesized from the elements, and its structure solved by single‐crystal X‐ray diffraction. Chemical bonding is discussed, by means of electronic structure calculations at the DFT level and its physical properties characterized with respect to electronic conductivity, magnetic susceptibility, specific heat capacity, and magnetoresistivity. The compound may be interpreted according to the Zintl‐Klemm concept as (Eu2+)(Mg2+)(Ge4–) with isolated germanium anions. Resistivity measurements reveal a semimetallic character, which is consistent with the vanishing energy gap obtained from our calculations. The magnetic susceptibility and the specific heat indicate that two consecutive transitions take place, at 9 and 16 K, and they show evidence of magnetic frustration. A possible physical scenario for this magnetic behavior is discussed based on known models of partially frustrated magnets.  相似文献   

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The remarkably broad homogeneity range of the NaTl-type Zintl phase in the ternary phase diagram Li-In-Ag at room temperature was determined by structure evaluation using X-ray powder diffraction. The colours of the investigated Zintl phases correlate with the valence electron concentration (VEC) as already established for the quasibinary cut Li0.5(InxAg1−x)0.5 with 0.47?x?1.00, i.e. with decreasing VECs the colour changes from grey over reddish to bright yellow. All compounds in the new quasibinary cut Lix(In0.5Ag0.5)1−x with 0.47?x?0.60 appear free from vacancies in the Li-sublattice, even for Li-deficient compositions. The partial occupation of Li-sites by excess Ag and In instead is in full agreement with the behaviour of the binary NaTl-type Zintl phases LixZn1−x and LixCd1−x (0.47?x?0.54) with a low VEC about 1.5.  相似文献   

9.
Two new Zintl compounds A10LaCdSb9 (A=Ca, Yb), namely, Ca9.81(1)La0.97(1)Cd1.23(1)Sb9 and Yb9.78(1)La0.97(1)Cd1.24(1)Sb9, have been designed and synthesized by applying the Zintl concept. Although both compounds are isoelectronic with their Ca11InSb9 and Yb11InSb9 analogues, they crystallize in a new structure type with the orthorhombic space group Ibam (No.72) and feature very complex anion structures, which are composed of unique [Cd2Sb6]12? clusters, dumbbell‐shaped [Sb2]4? dimers, and isolated [Sb]3? anions. For Yb9.78(1)La0.97(1)Cd1.24(1)Sb9, an extremely low lattice thermal conductivity of 0.29 W m?1 K?1 was observed at 875 K, which almost approaches the lowest reported limit of nonglassy or nonionically conducting bulk materials. According to thermogravimetric (TG) and differential scanning calorimetry (DSC) analyses, both compounds show very good thermal stability and no melting or phase transition processes were found below 1173 K. Although related thermoelectric property studies on Yb9.78(1)La0.97(1)Cd1.24(1)Sb9 only present a maximum ZT of 0.11 at 920 K, owing to its low Seebeck coefficients, these materials are still very promising for their high temperature stability and low thermal conductivity. Furthermore, as mixed cations exist with different charges, it makes this system very flexible in tuning the related electrical properties.  相似文献   

10.
The isotypic title compounds are obtained in high yield from the reactions of Ba, BaO, and Ge (Si) in welded Ta containers slowly cooled from 1100 °C. The structure of Ba3GeO was determined by single-crystal X-ray diffraction (orthorhombic symmetry; Pnma (No. 62); a = 7.591(1), b = 10.728(1), c = 7.551(1) Å; Z = 4; R = 0.058, Rw = 0.065 for 780 reflections (I > 3σ(I)) with 2θmax = 60°)). The structure consists of slightly deformed OBa6 octahedra that are tilted by £ 14° with respect to their positions in the ideal inverse perovskite structure. These distortions optimize eight of the original twelve equal Ba–Ge distances. The ideal cubic Ca3SiO (a = 4.699(1) Å) has also been synthesized.  相似文献   

11.
The hydrogenation of the Zintl phase NdGa was studied by in situ neutron powder diffraction. We find a compositional range of 0.1 < x < 0.8 in NdGaH1+x. Hydrogen atoms are located in two different positions, in HNd4 tetrahedra, and close to the polyanionic chains. For the latter, the Ga–H distance in NdGaH1.66 is quite long (ca. 200 pm) with a trigonal bipyramidal Nd3Ga2 surrounding of hydrogen atoms. Hydrogen poor NdGaH<1 phases as known for similar systems were not observed. The changing hydrogen content shows no measureable effect on the unit cell volume, but on lattice parameter ratios. Superstructures occur for 0.53 < x < 0.66 and 0.73 < x < 0.8, leading to a doubling or tripling of the lattice parameter a. They are probably caused by partial hydrogen ordering. The threefold superstructure contains a 1[(Ga–H–Ga–H–Ga)6–] moiety with hydrogen bridging two gallium chains.  相似文献   

12.
The Zintl phase Ba3Si4 has been synthesized from the elements at 1273 K as a single phase. No homogeneity range has been found. The compound decomposes peritectically at 1307(5) K to BaSi2 and melt. The butterfly‐shaped Si46− Zintl anion in the crystal structure of Ba3Si4 (Pearson symbol tP28, space group P42/mnm, a = 8.5233(3) Å, c = 11.8322(6) Å) shows only slightly different Si‐Si bond lengths of d(Si–Si) = 2.4183(6) Å (1×) and 2.4254(3) Å (4×). The compound is diamagnetic with χ ≈ −50 × 10−6 cm3 mol−1. DC resistivity measurements show a high electrical resistivity (ρ(300 K) ≈ 1.2 × 10−3 Ω m) with positive temperature gradient dρ/dT. The temperature dependence of the isotropic signal shift and the spin‐lattice relaxation times in 29Si NMR spectroscopy confirms the metallic behavior. The experimental results are in accordance with the calculated electronic band structure, which indicates a metal with a low density of states at the Fermi level. The electron localization function (ELF) is used for analysis of chemical bonding. The reaction of solid Ba3Si4 with gaseous HCl leads to the oxidation of the Si46− Zintl anion and yields nanoporous silicon.  相似文献   

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14.
Abstract. The ternary Zintl phase Ca3Ag1+xGe3–x (x = 1/3) was synthesized by the high‐temperature solid‐state technique and its crystal structure was refined from single‐crystal diffraction data. The compound Ca3Ag1.32Ge2.68(1) adopts the Sc3NiSi3 type structure, crystal data: space group C2/m, a = 10.813(1) Å, b = 4.5346(4) Å, c = 14.3391(7) Å, β = 110.05(1)° and V = 660.48(10) Å3 for Z = 4. Its structure can be interpreted as an intergrowth of fragments cut from the CaGe (CrB‐type) and the CaAg1+xGe1–x (TiNiSi‐type) structures, and it therefore represents an alkaline‐earth member of the structure series with the general formula R2+nT2X2+n with n = 4. Unlike the rare‐earth homologues that are fully ordered phases, one seventh of the atomic sites in the unit cell of the title compound are mixed occupied (roughly 2/3Ge and 1/3Ag), and this can be explained by the Zintl concept. The alloying of this phase using aluminum metal yielded the isotypic solid solution Ca3(Ag/Al)1+xGe3–x, in which the aluminum for silver substitution is strictly localized in the TiNiSi substructure, revealing the very different functionality of the two building blocks.  相似文献   

15.
16.
Ca14Si19 is an overlooked binary phase in the Ca/Si system with a novel type of twodimensional silicon framework (R3 c, a = 867.85(6), c = 6852.8(8) pm, Z = 6). The basic building units are 3,3,3-barrelanes Si11 which are linked by Si3 bridges to form a twodimensional silicon framework leaving space for interstitial calcium atoms. The thickness of the silicon layers is about 800 pm. The compound is a semiconductor with a band gap of about EG = 0.1 eV and a diamagnetic moment of χmole = ?9 · 10?4 cm3mol?1. According to the relatively high linking of silicon atoms the reaction with air and moisture is fairly slow.  相似文献   

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18.
Using the reduction of tin oxides with the elemental alkaline metals rubidium and cesium, stannide stannates have been synthesized which contain Zintl anions [Sn4]4— (i.e. Sn—I) and isolated oxostannate ions [SnO3]4— (i.e. Sn+II) together with further oxide ions for charge compensation. The crystal structures of the three compounds A23.6Sn7.4O13.2 = A23.6[Sn4][SnO3]3.4[O]3 (A = Rb 1a : monoclinic, P21/c, a = 2174.2(6), b = 1137.0(6), c = 2373.6(6) pm, β = 116.11(2)°, Z = 4, R1 = 0.056; A = Cs 1b : monoclinic, P21/c, a = 2042.6(6), b = 1185.4(3), c = 2481.1(7) pm, β = 97.06(2)°, Z = 4, R1 = 0.075) and Cs48Sn20O21 = Cs48[Sn4]4[SnO3]4[O]7[O2] ( 2 monoclinic, P2/c, a = 1701.8(3), b = 877.4(2), c = 4556.9(7) pm, β= 101.47(1)°, R1 = 0.093) have been determined on the basis of single crystal data. The transparency of the compounds allowed the recording of raman spectra of the anion [Sn4]4—. The 119Sn Moessbauer spectrum of the rubidium compound shows a singulet in good agreement with RbSn, overlapping a doublet caused by Sn2+ in the asymmetrical environment of the strongly electronegative oxygen ligands of SnO.  相似文献   

19.
20.
A Polyphosphide of Unusual Composition: The Crystal Structure of Ba5P9 The metallic grey compound Ba5P9 can be synthesised from the elements in stoichiometric amounts. It reacts easily with moist air. In the crystal structure (orthorhombic, Fdd2 , a = 1562.6(1) pm, b = 1896.8(2) pm, c = 1027.2(2) pm; Z = 8) anionic P9 chain fragments are separated by Ba cations. With respect to the stoichiometry a charge of 10‐ results for the polyphosphide anion, but 11 electrons are needed following the (8‐N) rule. According to magnetic measurements the anionic unit is no radical, so a stabilisation by double bonds is discussed.  相似文献   

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