介质阻挡放电中的局域态六边形结构

在氩气介质阻挡放电中得到了稳定的局域态六边形结构，并对其进行了时空动力学的测量.发现位于中心的放电丝的放电时刻总是领先，相邻两次放电的时间间隔表现出长短交替的周期性.利用壁电荷放电模型对上述结果进行了分析，表明微放电丝在放电过程中不仅受自身场的作用，还受到周围其他微放电丝的影响. 关键词： 介质阻挡放电 壁电荷 自组织 局域态结构     

大气压氩气介质阻挡放电中的四边形斑图和六边形斑图

在大气压氩气介质阻挡放电中，研究了斑图形成随放电条件的变化.观察到随电压的增加，斑图经历六边形—四边形—具有辉光背景的四边形—具有辉光背景的六边形的转变过程.其空间波长与放电丝密度也随之改变.在一定的放电条件下，斑图涌现出辉光背景，此时空间波长与放电丝密度保持不变，但放电丝每半周期放电脉冲数由一次变为两次. 关键词： 介质阻挡放电 四边形斑图 六边形斑图 空间波长     

介质阻挡放电丝模式和均匀模式转化的特性

利用水电极介质阻挡放电装置,采用电学方法和发射光谱,研究了空气中介质阻挡放电从微放电丝模式向均匀放电模式转化的过程. 结果表明,大气压下增大外加电压或者电压一定减小气压,放电都能够从微放电丝模式过渡到均匀模式. 高气压下放电为流光击穿而低气压下为辉光放电. 利用放电发射光谱,研究了高能电子比例随实验参数的变化. 结果表明气压减小时高能电子比例增大,电压增加时高能电子减少. 利用壁电荷理论对以上实验结果进行了定性分析. 结果对介质阻挡均匀放电的深入研究具有重要价值. 关键词： 介质阻挡放电 光学发射谱 微放电丝 均匀放电模式     

介质阻挡放电中放电丝结构相变过程研究

在氩气和空气混合气体介质阻挡放电中,研究了放电丝结构随外加电压及气体压强的变化,并从二维体系相变的角度进行了分析.随着电压的增加,放电丝结构的演变过程为:稀疏的随机放电丝—稠密的随机放电丝—六边形结构—超六边形结构—混沌态,此过程相应于二维体系的气相—液相—简单晶体—超点阵晶体—液相的相变过程.实验还研究了相变过程中超六边形形成中晶格常数及相邻格点间距离的变化、超六边形结构中大点的形成过程以及超六边形结构的Penta-Hepta缺陷.     

介质阻挡放电丝模式和均匀模式转化的特性

利用水电极介质阻挡放电装置，采用电学方法和发射光谱，研究了空气中介质阻挡放电从微放电丝模式向均匀放电模式转化的过程. 结果表明，大气压下增大外加电压或者电压一定减小气压，放电都能够从微放电丝模式过渡到均匀模式. 高气压下放电为流光击穿而低气压下为辉光放电. 利用放电发射光谱，研究了高能电子比例随实验参数的变化. 结果表明气压减小时高能电子比例增大，电压增加时高能电子减少. 利用壁电荷理论对以上实验结果进行了定性分析. 结果对介质阻挡均匀放电的深入研究具有重要价值.     

大气压氦气介质阻挡放电倍周期分岔及混沌现象的实验验证

采用具有平行电极结构的介质阻挡放电装置,在大气压氦气条件下进行了一系列放电实验,观察了放电波形并对其进行了频谱分析.结果表明,在一定条件下随外施电压幅值的增加,大气压氦气均匀介质阻挡放电会由周期一态放电经周期二态、周期四态放电进入混沌态放电.研究验证了大气压氦气介质阻挡放电经倍周期分岔路径通向混沌的现象,不仅仅出现在数值仿真中,在现实实验中也是确实存在的.     

空气介质阻挡放电单个微放电通道发光强度及振动激发温度的空间分布

通过清洗放电方法,在平行平板介质阻挡空气放电中得到了单个稳定的微放电通道（又称放电丝）.测量了从瞬时阳极到瞬时阴极单个放电丝的发光强度及振动激发温度的空间分布.研究表明：在外加电压的每半周中放电丝发光呈现杯型分布,杯底位于瞬时阴极处;振动温度在两平行板间隙的中心处最高而在瞬时阳极处最低. 关键词： 介质阻挡放电 微放电通道 振动温度     

介质阻挡放电系统中超四边形斑图形成的实验研究

采用水电极介质阻挡放电装置,在氩气和空气的混合气体放电中,对超四边形斑图的形成进行了实验研究.发现随着外加电压的升高,斑图类型经历了四边形斑图、准超点阵斑图、超四边形斑图、条纹斑图或六边形斑图的演化顺序.对这些斑图进行了傅里叶谱分析,得到了空间模式随电压的变化关系.此外,在外加电压升高的过程中,出现了具有不同空间尺度的两种超四边形斑图,它们满足不同的驻波条件.分析了壁电荷在超四边形斑图形成中的作用.实验测量了斑图类型随气隙间距和外加电压变化的相图以及超四边形斑图随气隙间距和气隙气压变化的相图.测量了击穿电 关键词： 介质阻挡放电 斑图 壁电荷 放电参量     

大气压介质阻挡放电中的自组织斑图结构

采用水作为电极,对大气压介质阻挡放电中的自组织斑图结构进行了研究,观测到了规则的斑图结构(包括准六边形斑图和条带状斑图)和不规则的斑图结构.实验发现斑图中放电丝的密度随着电介质层厚度的增加及放电气隙宽度变大而减小,而随外加电压及频率增大而增大.采用空间相关函数的方法分析了准六边形斑图结构中的放电丝分布与驱动电源电压的关系 关键词： 介质阻挡放电 自组织斑图 放电丝密度 空间相关函数     

氩气放电中四边形发光斑图形成过程研究

采用介质阻挡放电装置,在不同的边界条件下，在大气压氩气放电中观察到了稳定的四边形发光斑图. 采用光电倍增管，在纳秒时间尺度测量了四边形斑图的时空动力学, 发现它是由两套具有时间反演行为的四边形子结构交替振荡并相互嵌套而成的. 讨论了介质表面的壁电荷分布对发光斑图的形成及其时空动力学行为的影响. 关键词： 介质阻挡放电 四边形斑图 壁电荷     

Influence of defect states on band gaps two-dimensional phononic crystal in the of4340 steel in an epoxy

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60 crystal linear defect states, 120 crystal linear defect states, and 180 crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed.     

Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy

The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section into epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F=0.1-0.85. In addition, the influence of filling fraction on the relative width of the minimum band gap is discussed.     

Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

The degradation mechanism of GaN-based near-ultraviolet (NUV, 320-400 nm) light emitting diodes (LEDs) with low-indium content under electrical stress is studied from the aspect of defects. A decrease in the optical power and an increase in the leakage current are observed after electrical stress. The defect behaviors are characterized using deep level transient spectroscopy (DLTS) measurement under different filling pulse widths. After stress, the concentration of defects with the energy level of 0.47-0.56 eV increases, accompanied by decrease in the concentration of 0.72-0.84 eV defects. Combing the defect energy level with the increased yellow luminescence in photoluminescence spectra, the device degradation can be attributed to the activation of the gallium vacancy and oxygen related complex defect along dislocation, which was previously passivated with hydrogen. This study reveals the evolution process of defects under electrical stress and their spatial location, laying a foundation for manufacture of GaN-based NUV LEDs with high reliability.     

含负折射率缺陷的一维光子晶体的杂质带

利用传输矩阵方法研究了含负折射率缺陷的一维光子晶体的透射谱.以19个周期的1/4波堆存在3个负折射率缺陷的光子晶体为例进行了数值计算.结果表明:如果改变缺陷的折射率,缺陷模之间的耦合作用将发生改变,带隙中形成的杂质带也随之改变; 当这个折射率取适当值时,在禁带中出现多个尖锐的透射峰,与正折射率缺陷构成的杂质带不同.     

Transport by Molecular Motors in the Presence of Static Defects

The transport by molecular motors along cytoskeletal filaments is studied theoretically in the presence of static defects. The movements of single motors are described as biased random walks along the filament as well as binding to and unbinding from the filament. Three basic types of defects are distinguished, which differ from normal filament sites only in one of the motors’ transition probabilities. Both stepping defects with a reduced probability for forward steps and unbinding defects with an increased probability for motor unbinding strongly reduce the velocities and the run lengths of the motors with increasing defect density. For transport by single motors, binding defects with a reduced probability for motor binding have a relatively small effect on the transport properties. For cargo transport by motors teams, binding defects also change the effective unbinding rate of the cargo particles and are expected to have a stronger effect.     

Arrangement effects of triangular defects on magnetization reversal process in a permalloy dot

The arrangement effects of triangular defects on the magnetization configurations and switching process of a permalloy disk are investigated by micromagnetic simulations. For the case of one defect, the vortex is nucleated via the S state (W state) as the direction of the triangular defect is parallel (perpendicular) to the orientation of the external field. For the case of two defects, two types of switching processes are found dependent on their arrangement. For the two triangular defects with the same direction, the reversal occurs via formation, pinning, depinning and annihilation of the vortex state, however, for the two triangular defects with the opposite directions, the reversal is realized by formation and annihilation of the double-vortex state. The nucleation field for the disk with a triangular defect is more sensitive to the defect position than the case of a circular (square) defect, and it shows different variation trends for different triangular directions. The chirality of the vortex state nucleated in the reversal process can be controlled by the triangular defect.     

Phase transitions in a two-dimensional vortex system with defects: Monte Carlo simulation

AbstractThe phase states and phase transitions in a system consisting of a two-dimensional vortex lattice with defects are studied by the Monte Carlo method. It is shown that a “rotating lattice” phase, which is an intermediate phase between the vortex crystal and vortex liquid phases, is present. The dependence of the temperature of the transition from the rotating lattice phase into a vortex liquid on the strength of the defect potential is determined. The current-voltage characteristics of the system are calculated at various temperatures for point, square, and linear defects. It is shown that the phase state of the system strongly affects its transport properties.     

分子动力学研究表面缺陷对硅纳米线杨氏模量的影响

硅纳米线因受量子尺寸效应与表面效应的影响而具有奇特的力、电及其耦合特性,成为了纳米电子器件的核心构件.然而在硅纳米线的制备过程中,表面产生缺陷不可避免.因此本文采用分子动力学方法着重研究了表面缺陷浓度对不同横截面形状(正方形、六角形和三角形)的[110]晶向和[111]晶向硅纳米线杨氏模量的影响.研究结果表明,当硅纳米线仅有单一表面缺陷时,不同晶向硅纳米线的杨氏模量均随表面缺陷浓度增加而迅速单调减小.当表面缺陷浓度为10%时,杨氏模量的减小幅度在10%-20%之间,减小幅度的差异与硅纳米线的晶向以及横截面形状密切相关.当存在多个表面缺陷时,杨氏模量随着缺陷浓度的增加表现出了不同程度的波动趋势.三角形截面硅纳米线的杨氏模量波动幅度最大,正方形截面的波动较小,即表面缺陷分布的不同对正方形截面硅纳米线的杨氏模量影响较小,这表明表面缺陷的影响与其分布及硅纳米线的横截面形状密切相关.通过与实验结果对比,本文的研究结果揭示了表面缺陷是导致硅纳米线杨氏模量实验值变小的重要因素,因此在表征硅纳米线的力学性能时,需要考虑表面缺陷的影响.     

光子晶体局域缺陷模及耦合特性研究

用超胞平面波展开法计算了二维正方格子介质柱光子晶体缺陷模,系统模拟了在改变缺陷模数目和缺陷模之间的距离及在不同耦合方向等情况下的耦合特性。计算结果表明：局域缺陷模之间的耦合所产生分裂的缺陷模式频率随着缺陷之间的距离而发生变化．当缺陷之间距离增加时,缺陷模之间耦合变得越来越弱且奇模和偶模交替变化;随着耦合缺陷点数目增加,缺陷模在光子带隙内形成一个缺陷带;当平面波平行于缺陷模耦合方向入射时．可以同时激发奇模和偶模．当入射平面波垂直于耦合方向时．仅产生偶模;沿对角线方向耦合的定域化的缺陷模电磁场快速衰减使得那些方向每一个单谐振腔局域光场与它邻近的谐振腔不发生耦合,其本征频率与波矢无关。