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采用化学气相沉积方法, 利用Sb2O3/SnO作为源材料, 在蓝宝石衬底上制备出不同Sb掺杂量的SnO2薄膜, 并在此基础上制作出p-SnO2:Sb/n-SnO2同质p-n 结器件. 研究表明, 随着Sb含量的增加, 样品表面变得平滑, 晶粒尺寸逐渐增大, 且晶体质量有所改善, 发现少量Sb的掺入可以起到表面活化剂的作用. Hall测量结果证实适量Sb的掺杂可以使SnO2呈现p型导电特性, 当Sb2O3/SnO的质量比为1:5时, 其电学参数为最佳值. 此外, p-SnO2:Sb/n-SnO2同质p-n结器件展现出良好的整流特性, 其正向开启电压为3.4 V. 相似文献
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采用传统无压烧结工艺制备了Nd3+掺杂的Y2-2xLa2xO3(x=0.08)透明陶瓷并对其光谱性能进行了研究. 结果表明:Nd3+:Y1.84La0.16O3透明陶瓷在780—850 nm的波长范围内有较宽的吸收带. 当Nd3+掺杂量为1.5at%时,在820 nm和激光二极管抽运的808 nm处的吸收截面分别为σabs(820 nm)=1.81×10-20 cm2,σabs(808 nm)=1.54×10-20 cm2. 最强的发射峰位于1078 nm处,并具有荧光寿命长、发射带宽宽、量子效率高等特点. 加入La2O3后,基质的光谱品质参数XNd由1.6减小到0.46,因此和4F3/2—4I11/2跃迁相对应的荧光分支比βJ,11/2增大为56.82%. Nd3+:Y1.84La0.16O3透明陶瓷的这些性质有利于高效率的激光输出和超短锁模激光脉冲的实现.
关键词:
氧化镧钇透明陶瓷
光谱性能
3+')" href="#">Nd3+ 相似文献
4.
α-Fe2O3是一种重要的磁性半导体材料, 在电子器件中应用广泛, 具有重要的研究意义. 本文基于密度泛函理论, 采用GGA+U方法, 应用第一性原理对间隙H掺杂前后的六方相α-Fe2O3的晶格常数、态密度、Bader 电荷分布进行了计算分析. 研究了U值对结果的影响, 发现U=6 eV时, 体相α-Fe2O3的晶胞平衡体积、Fe原子磁矩、带隙值与实验值最符合. 在选取合适U值后, 第一性原理计算结果表明, H掺杂后, 间隙H部分被氧化, 其最近邻的Fe 和O部分被还原, H和O有一定程度的成键. 在费米面附近, 出现了新的杂化能级, 杂化能级扩展了价带顶的宽度, 同时导带底下移, 引起带隙减小, 表明H掺杂是一种有效的能带结构调控方法. 相似文献
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用高温熔融法制备了相同质量百分比浓度4%Tm2O3掺杂浓度下(90-x)GeO2-xNb2O5-10Na2O(其中数字为摩尔百分比x=1,2,4,6,8)以及Tm2O3掺杂浓度分别为质量百分比1%,2%,3%,4%下86GeO2-4Nb2O5-10Na2O(其中数字为摩尔分数)系列玻璃.研究了Nb2O5组分对玻璃热稳定性,荧光强度和J-O参数的影响.应用Judd-Ofelt理论,计算了Tm3+离子在Nb2O5浓度不同时的J-O强度参数(Ω2,Ω4,Ω6)及Tm3+离子各激发态能级的自发跃迁概率、荧光分支比以及辐射寿命等光谱参量.根据McCumber理论,计算了Tm3+离子能级3F4→3H6(1.8 μm)跃迁的吸收截面和受激发射截面.从获得的吸收截面、发射截面与离子掺杂浓度计算了1.8 μm荧光波段的增益截面曲线.在808 nm波长光的激发下,研究了Tm3+掺杂玻璃在1.47与1.8 μm附近的荧光特性.发现当Tm2O3掺杂浓度为质量百分比3%时,在1.8 μm处的荧光强度达最大,然后随着掺杂浓度的增大,其荧光强度反而降低;当Nb2O5摩尔分数含量大约在2%时,Tm3+在1.8 μm处的荧光强度最强.并讨论了Nb2O5组分变化对玻璃结构与光谱特性的影响情况.
关键词:
3+掺杂锗铌酸盐玻璃')" href="#">Tm3+掺杂锗铌酸盐玻璃
红外光谱性质
交叉弛豫
2O5')" href="#">Nb2O5 相似文献
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研究了非化学计量和掺杂对无铅压电陶瓷(Na1/2Bi1/2)0.92Ba0.08TiO3的压电性能及去极化温度的影响.研究发现A位非化学计量可以提高陶瓷的压电性能;B位掺杂对材料电学性能的影响规律类似于Pb(Ti,Zr)O3系压电陶瓷的相关规律;由于非化学计量和掺杂会影响到A位离子对B位离子与氧离子形成的BO6八面体的耦合作用,影响到畴的稳定性,从而影响
关键词:
无铅压电陶瓷
非化学计量
掺杂
电性能 相似文献
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采用传统的固相法制备了(1-x)(K0.5Na0.5NbO3-LiSbO3-BiFeO3)-xCuFe2O4 (x=0.1, 0.2, 0.3, 0.4) 磁电复合陶瓷, 并借助X射线衍射仪、扫描电镜和磁电耦合系数测试仪等对复合陶瓷的微结构和性能进行了分析. 结果表明, 复合陶瓷的K0.5Na0.5NbO3-LiSbO3-BiFeO3和CuFe2O4物相之间发生了一定的离子相互扩散作用, 且两相的颗粒大小匹配性较好. 随着CuFe2O4含量增加, 复合陶瓷的压电系数从130 pC/N减小到30 pC/N, 饱和磁致伸缩系数从4.5×10-6增加到12.4×10-6左右, 磁电耦合系数表现出先增加后减小, 在x=0.3时获得最大的磁电耦合系数9.4 mV·cm-1·Oe-1.
关键词:
0.5Na0.5NbO3-LiSbO3-BiFeO3')" href="#">K0.5Na0.5NbO3-LiSbO3-BiFeO3
2O4')" href="#">CuFe2O4
磁电耦合 相似文献
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Sb2Se3是一种低成本、环境友好、具有良好应用前景的光伏材料.目前Sb2Se3太阳能电池的光电转换效率已经提高到了10%.载流子复合动力学是决定Sb2Se3太阳能电池光电转换效率的关键因素.本文利用飞秒时间分辨表面瞬态反射谱详细分析了Sb2Se3表面、Sb2Se3/CdS界面载流子复合动力学过程.根据相对反射率变化?R/R的演化,得到Sb2Se3载流子热化、带隙收缩时间约为0.2—0.5 ps,估计热载流子冷却时间为3—4 ps.还实验证实在Sb2Se3/CdS界面处存在自由电子转移和浅束缚电子转移两种电子转移过程.本文提供了Sb2Se3表面瞬态反射谱分析方法,所得实验结果拓展了对Sb2Se3表... 相似文献
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硒化锑(Sb2Se3)是一种二元单相化合物, 原料储量大、毒性低、价格便宜; 同时其禁带宽度合适(~1.15 eV), 吸光系数大(>105 cm-1), 长晶温度低, 非常适合制作新型低成本低毒的薄膜太阳能电池, 理论光电转换效率可达30%以上. 目前文献报道的Sb2Se3薄膜太阳能电池效率已达3.7%, 初步证明了Sb2Se3材料在薄膜太阳能电池应用方面的巨大潜力. 本文综述了近年来Sb2Se3太阳能电池的研究进展, 着重介绍了Sb2Se3的材料特性和薄膜制备及相关理论研究, 阐述了不同结构电池器件的研究进展, 并对其发展趋势进行了展望. 相似文献
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The electronic structures of doped Sb2O5 by IV-family elements (Si, Ge and Sn) were examined using the density function theory (DFT). Density of states (DOSs) results
showed that the substituted IV-family elements act as acceptors in Sb2O5. Partial DOSs indicates that by substituting Ge(Ge
Sb
) or Sn(Sn
Sb
), there may be a larger contribution to the total DOSs near E
F
than by substituting Si, which suggests that doping Ge or Sn in Sb2O5 produces better ptype doping compared to doping Si. Formation energy results show that IV-family elements are more likely
to exist in the substituted position rather than in the interstitial position in Sb2O5, decreasing any self-compensation effect and making it easier for IV-family elements to realize ptype doping in Sb2O5. Ionization energy results show that Ge
Sb
or SnSb, two among the three impurities considered, act as shallow acceptors in Sb2O5, thus producing a higher concentration of holes.
相似文献
12.
用熔融退火结合放电等离子烧结法制备了In0.3Co4Sb12-xSex(x=0—0.3)方钴矿热电材料,探讨了In的存在形式,系统研究了Se掺杂量对结构和热电性能的影响.结果表明:In可以填充到方钴矿二十面体空洞处,过量In在晶界处形成InSb第二相,Se对Sb的置换使晶格常数减小,In填充上限降低;In0.3Co4Sb12-xSex样品呈n型传导,随着Se掺杂量的增大,载流子浓度降低,电导率下降,Seebeck系数增大,功率因子有所降低;由于在结构中引入了质量波动及晶格畸变,适量的Se掺杂可以大幅降低材料晶格热导率;样品In0.3Co4Sb12和In0.3Co4Sb11.95Se0.05的最大ZT值均达到1.0以上.
关键词:
掺杂
填充式方钴矿
热电性能 相似文献
13.
In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm 1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb+ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead. 相似文献
14.
V. A. Kulbachinskii V. G. Kytin P. M. Tarasov N. A. Yuzeeva 《Physics of the Solid State》2010,52(9):1830-1835
The effect of Ga doping on the temperature dependences (5 K ≤ T ≤ 300 K) of the Seebeck coefficient α, electrical conductivity σ, thermal conductivity coefficient κ, and thermoelectric
figure of merit Z of p-(Bi0.5Sb0.5)2Te3 single crystals has been investigated. It has been shown that, upon Ga doping, the hole concentration decreases, the Seebeck
coefficient increases, the electrical conductivity decreases, and the thermoelectric figure of merit increases. The observed
variations in the Seebeck coefficient cannot be completely explained by the decrease in the hole concentration and indicate
a noticeable variation in the density of states due to the Ga doping. 相似文献
15.
Zhenhai Liang Yongbo DingJinqian Jia Caimei FanPeide Han 《Physica B: Condensed Matter》2011,406(11):2266-2269
A theoretical study on Sb-doped SnO2 has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA) level. Stability and conductivity analyses were performed based on the formation energy and electronic structures. The results show that Sn0.5Sb0.5O2 solid solution is stable because the formation energy of Sn0.5Sb0.5O2 is −0.06 eV. The calculated energy band structure and density of states showed that the band gap of SnO2 narrowed due to the presence of the Sb impurity energy levels in the bottom of the conduction band, namely there is Sb 5s distribution of electronic states from the Fermi level to the bottom of conduction band after the doping of antimony. The studies provide a theoretical basis to the development and application of Sn1−xSbxO2 solid solution electrode. 相似文献
16.
Q. J. Zeng Z. Cheng J. -H. Yuan 《The European Physical Journal B - Condensed Matter and Complex Systems》2011,79(3):275-281
We present the calculations of the electronic structure
and transport properties on the filled-skutterudites
LaFe4Sb12 and CeFe4Sb12 using the
full-potential linearized augmented plane-wave method and the semi-classical
Boltzmann theory. Our calculation indicates that LaFe4Sb12 and
CeFe4Sb12 have the large density of states near the Fermi
level. The obtained Seebeck coefficient and the magnetic susceptibilities
are in good agreement with experimental results. It is found that n-type
doping in the CeFe4Sb12 compound may be more favorable than
p-type doping below 900 K and p-type doping in the CeFe4Sb12
compound may be more favorable than n-type doping above 900 K. It is also seen
that n-type doping in the LaFe4Sb12 compound may be more
favorable than p-type doping below 700 K and p-type doping in the
LaFe4Sb12 compound may be more favorable than n-type doping
above 700 K. Ultimately, we found that LaFe4Sb12 is more
suitable for thermoelectric applications than CeFe4Sb12. 相似文献
17.
Yuanxiang Zhou Qinghua Sun Ninghua Wang Yunshan Wang 《Journal of Electrostatics》2009,67(2-3):426-429
Polyethylene is widely used in electrical wires and power cables. The pre-stressing effect, which restricts the applications of polyethylene, has not yet been investigated in depth. We studied the breakdown of low-density polyethylene (LDPE) films pre-stressed by direct current (DC) electric field. The results showed some conformity, as reported in many other papers, that the DC breakdown strength EB+ with the same polarity to that of the pre-stressing field was higher than the DC breakdown strength EB of thin LDPE films without pre-stressing, while the DC breakdown strength EB? with the opposite polarity was lower than EB. Such phenomena could be explained by the hetero effects of accumulating space charges, which enhanced the electrical field when the polarity was reversed. However, as a further increase in pre-stressing electrical field, both EB+ and EB? were found higher than EB. We investigated the space charge behavior in LDPE films and found that when applied with a higher electrical field, space charge packet initialized and traveled through the specimen. The results suggest that the space charge packet behavior may contribute to the pre-stressing effects on electrical breakdown in LDPE films. 相似文献
18.
We report on the synthesis and low temperature transport of Mg2Ge1–y Sby with 0 ≤ y ≤ 0.33. In these materials Sb substitutes for Ge in the antifluorite structure. Electrical and thermal transport measurements indicate that as the Sb content increases, vacancies are formed on the Mg sites thereby contributing to variations in the transport properties. With increasing Sb content both the absolute Seebeck coefficient and electrical resistivity first decrease and then increase, while the thermal conductivity decreases monotonically. Hall measurements indicate this tendency is associated with vacancy formation at higher Sb concentrations. The lattice thermal conductivity is fitted using the Debye approximation in order to elucidate the effect of alloying. We discuss these results in terms of potential for thermoelectric applications. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
19.
The Antimony-doped tin oxide (SnO2:Sb) films have been prepared on glass substrates by RF magnetron sputtering method. The prepared samples are polycrystalline films with rutile structure of pure SnO2 and have preferred orientation of (1 1 0) direction. XRD measurement did not detect the existence of Sb2O3 phase and Sb2O5 phase; Sb ions occupy the site of Sn ions and form the substitution doping. An intensive UV-violet luminescence peak near 392 nm is observed at room temperature. Photoluminescence (PL) properties influenced by sputtering power and annealing for the SnO2:Sb films are investigated in detail and corresponding PL mechanism is discussed. 相似文献
20.
A. S. Kyuregyan 《Technical Physics》2004,49(6):720-727
A theory of drift step-recovery diodes as current interrupters in inductive-storage generators is elaborated. The theory includes
the nonlinear dependence of the base resistance and barrier capacitance on the current passing through the diodes. Simple
relationships are obtained for the diode parameters (the thickness and doping level of the base, the charge of nonequilibrium
holes extracted from the base for the time T
B of high-reverse-conductivity phase, and the surface area and number m of series-connected diodes) and parameters of the loop (the capacitance and inductance of the energy storage and the initial
voltage U
C
0 across the capacitance) that provide the generation of a voltage pulse with a desired rise time t
B and amplitude U
m on the load. For a given diode efficiency k, the maximal values of the overvoltage factor U
m/U
C
0 and pulse sharpening coefficient T
B/t
B are shown to depend on a factor proportional to
kw (1 - k)EB /Es ,k^\omega (1 - k)E_B /E_s , 相似文献
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