Electron beam-induced decomposition of graphite fluoride

Irradiation of graphite fluoride with electron beams has been carried out on a electron probe microanalyzer. Radiation-induced decomposition took place predominantly instead of thermal decomposition. The decomposition tended to occur in the following order: powdery (CF)_n, white flaky (CF)_n, and (CF₂F)_n. The kinetics of the decomposition reaction induced by electron beams was evaluated by the ZAF correction of the measured intensities of F K- and C K-emission bands. It was found that the kinetic of the decomposition of graphite fluoride was of Avrami-Erofejev type; the rate equations were $\text{-}\text{ln}\text{(1?α)=kt}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ for (CF)_n and -ln(1?α)=kt² for (C₂F)_n. An application to the electron microbeam processing of graphite fluoride was suggested in relation to its unique physicochemical properties.     

CdTe aggregates in KBr crystalline matrix

In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E_g (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 °C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.     

Manifestation of auger processes in C1s-satellite spectra of single-walled carbon nanotubes

Using the equipment of the Russian-German beamline of the synchrotron radiation at the BESSY II electron storage ring, satellite spectra accompanying the C1s core lines in the cases of single-walled carbon nanotubes and highly ordered pyrolytic graphite have been measured with a high energy resolution. The Auger spectra corresponding to shaking of the valence system of carbon by the core vacancy have been found and investigated. The Auger spectra of the studied single-walled carbon nanotubes and highly ordered pyrolytic graphite are caused by annihilation of the excited π* electron with a hole in the π subband. It has been established that the electron states in the conduction band have 3π* (gT, K, M) symmetry; i.e., they correspond to flat 3π* subband, which is localized by 12–13 eV above the Fermi level. It has been revealed that the general regularities of the distribution of electron states in the valence system insignificantly change during its shake-up by the excited core.     

Low-temperature time-resolved vacuum ultraviolet luminescent spectroscopy of KH2PO4 crystals with defects

Low-temperature photoluminescence (PL) of unactivated KDP crystals under selective synchrotron excitation is for the first time measured with subnanosecond time resolution. Time-resolved PL (2–6 eV) and PL excitation (4–35 eV) spectra, as well as PL kinetics, are measured at 7 K. From the acquired experimental data, luminescent bands related to intrinsic defects of the KDP lattice are identified; in particular, the long-wave band at 2.6 eV is assigned to L defects, and the band at 3.5–3.6 eV is attributed to D defects. An efficient energy transfer over the hydrogen sublattice is shown to take place in KDP at low temperatures. It results in the efficient excitation of L and D center photoluminescence in the fundamental absorption region, at electron transitions to the bottom levels of the conduction band, corresponding to the states of the hydrogen atom. The band gap E _g is evaluated to be 8.0–8.8 eV.     

Electronic structure of PdO studied by photoemission (XPS,UPS)

In this paper we present the results of photoemission studies (XPS and UPS) performed on a polycrystalline surface of PdO. The electron density of states (EDOS) deduced both from XPS and UPS (He_I and He_II) are very similar. The valence band of PdO, which differs significantly from the Pd one, can be built up by four structures located at 0.5 eV, 2.2eV, 4.5 eV and 6.5 eV below E_F. The various electronic contributions (p or d) in the band are considered and, in order to explain our spectra, we discuss several hypothesis taking into account the possible existence of satellite lines or crystal field effects. Our XPS and UPS spectra show that the energy bands of PdO are narrow (～ 2–3 eV), moreover the energy shift of the core levels (|ΔE^F_B| = 2 eV) is important : these results suggest that the correlations between the d electrons may be important in PdO.     

Excitation of lowest electronic states of the uracil molecule by slow electrons

The excitation of lowest electronic states of the uracil molecule in the gas phase has been studied by electron energy loss spectroscopy. Along with excitation of lowest singlet states, excitation of two lowest triplet states at 3.75 and 4.76 eV (±0.05 eV) and vibrational excitation of the molecule in two resonant ranges (1?C2 and 3?C4 eV) have been observed for the first time. The peak of the excitation band related to the lowest singlet state (5.50 eV) is found to be blueshifted by 0.4 eV in comparison with the optical absorption spectroscopy data. The threshold excitation spectra have been measured for the first time, with detection of electrons inelastically scattered by an angle of 180°. These spectra exhibit clear separation of the 5.50-eV-wide band into two bands, which are due to the excitation of the triplet 1³ A?? and singlet 1¹ A?? states.     

Electronic structure of PbI2 from photoelectron spectra and the exciton problem

The valence band density of states for PbI₂ is determined from X-ray and u.v. induced photoelectron spectra. It is shown that the band derived from Pb 6s states is at 8 eV binding energy and not at the top of the valence bands as suggested by band structure and charge density calculations. A rigid shift in the predominantly iodine 5p derived bands to lower binding energy brings the band structure calculations into essential agreement with experiment. Pb 5d core level binding energies determined here are used to derive core level exciton energies of 0.7 eV from published reflectivity spectra.     

Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates

The spinodal-like decomposition of In_xGa_1−xP epitaxial layer prepared by low-pressure metallorganic vapour phase epitaxy was studied by means of photoluminescence and transmission electron microscopy. Epitaxial layers were grown on GaP substrates at T_g = 740 °C and reactor pressure of 20 mbar. We show that presence of spinodal-like decomposition occur at samples with InP mole fraction higher as x = 0.2 and V/III ratio of 75. The low-temperature photoluminescence spectra shows that in partially decomposed samples a characteristic broad band occurred close to 1.985 eV. An increase in the V/III ratio up to a value of 350 suppressed the decomposition, and PL signal with only one narrow transition was obtained.     

Valence band of molybdenum by photoelectron spectroscopy

Experimental photoelectron spectra of a clean polycrystalline Mo surface excited by monochromatized Al K _α X-rays are presented. The spectra are compared with valence bands obtained by UPS and by band structure calculations within the 5 eV region below the Mo Fermi level. All results mentioned above display peaks at 0.3, 1.7, 2.8 and 4 eV belowE _F. The energy distribution of the valence band does not vary with photon energy and electron emission angle for the four different polycrystalline Mo surfaces compared. It is concluded that the four peaks representing the Mo valence band are predominantly of bulk origin.     

Luminescence induced by x-ray in lithium hydride

Luminescence spectra and decay times of a single crystal LiH were measured with X-ray and pulsed electron excitation at low temperature. The emission band at 4.4 eV with a decay time of 220 nsec and the one at 3.3 eV with decay times of 17 and 150 μsec are tentatively ascribed to correspond to the σ- and π-type transitions, respectively, of the (X^?₂ + e) in alkali halides.     

Fundamental absorption spectra of transition metal chlorides

The optical absorption spectra of MnCl₂, FeCl₂, CoCl₂, and NiCl₂ have been measured over the energy range from 2 to 30 eV. The gross features of the spectra, especially broad bands above 10eV, are alike in all of the four materials. The charge transfer bands due to the electronic transitions from the 3p level of chlorine to the 3d and 4s levels of metal ions and the band due to the 3d → 4s transition are assigned in the spectra.     

Valence band contributions to photoluminescence excitation spectra of tightly bound holes in zincblende semiconductors

Photoluminescence excitation (PLE) spectra of deep acceptor states in ZnSe, for example the Cu-related luminescence band at ≈1.95 eV, contain a prominent excitation band at ≈3.25 eV. This band lies above the structure marking the lowest direct E_O band gap E_g by the spin-orbit splitting energy Δ of the valence bands at Γ. The higher energy feature is either absent or greatly de-emphasised in the PLE spectra of shallow acceptor states in ZnSe and of the oxygen iso-electronic trap in ZnTe, where the electron rather than the hole is tightly bound. However, a significant PLE component at E_g + Δ is observed for deep acceptor-like states in ZnTe, where Δ is ≈0.95 eV. Efficient PLE at E + Δ for luminescence from deep acceptor-like states is shown to be consistent with the extended wave-vector contributions to the bound state wave-functions of holes of binding energies ≈Δ.     

The role of extended defects in the formation of the spectrum of electronic states in high-purity p-CdTe polycrystals with stoichiometric composition

The spectra of the low-temperature photoluminescence in the cases of band-to-band and subgap laser excitation and the luminescence-excitation spectra of high-purity [111]-textured p-CdTe polycrystals with stoichiometric composition were measured. The spectrum of electronic states in the 1.3–1.6 eV energy range and the changes in this spectrum as a result of annealing of the samples in cadmium vapor were studied. It is shown that the electron levels located in the CdTe band gap that are responsible for the Z and Y luminescence bands (?ω=1.36 and 1.47 eV) are formed as a result of interaction of extended defects with background impurities.     

Inner shell excitation,valence excitation and core ionization in NF3 studied by electron energy-loss and X-ray photoelectron spectroscopies

Electron energy-loss Spectroscopy (EELS) at impact energies of 2.5–3 keV has been used to obtain the electron excitation spectra for the N 1s (K-shell), F 1s (K-shell) and valence shell regions of NF₃. The inner shell spectra were recorded using small angle scattering (?1° ) while the valence shell spectrum was obtained at zero degree scattering angle. The inner shell excitation spectra show a strongly enhanced 1s→ δ^* type transition and continuum features which are typical for molecules with highly electronegative ligands. One of the peaks in an earlier published photoabsorption study of the N 1s region has been shown to be due to a N₂ impurity. The valence shell electron energy-loss spectrum shows a number of transitions which are considered to be mainly due to valence-valence type transitions, with also some evidence of Rydberg structure.The X-ray photoelectron spectra (XPS) of the N 1s and F 1s electrons along with their associated satellite structures have also been recorded using Al Kα (1486.58 eV) radiation. The vertical ionization potentials for the N 1s and F 1s electrons were found to be 414.36 (10) eV and 693.24 (10) eV, respectively. Both spectra exhibit a rich and different satellite structure. These “shake-up” features in the satellite XPS spectra are compared with continuum features of the inner shell electron energy-loss spectra and also with the valence shell spectrum.     

Room-Temperature 2.5 eV Pulsed Cathodoluminescence Band of High-Purity Silicon Dioxide

We study the room-temperature (RT) pulsed cathodoluminescence (PCL) spectra of a set of pure synthetic (both crystalline and amorphous) silicon dioxide samples. We show that the PCL spectra of all samples (both amorphous and crystalline) possess bands with intensity maxima in the region of 487 – 500 nm (2.54 – 2.48 eV). These bands are the most intense in the PCL spectra of disordered materials. We investigate the annealing behavior of RT PCL spectra of the crystalline and amorphous samples. Annealing has no significant effect on this emission. We demonstrate that the surface area of the material plays no role in the emission of PCL bands at 415 and 490 nm in the spectra of α-quartz single crystal and crystalline powder with grain sizes of 10 – 100 μm. Our results show that the bands in the region of 2.5 eV are the universal property of all synthetic pure SiO₂ samples. The nature of the SiO₂ emission band in the region of 2.5 eV is not clear; we discuss two possible explanations. The first one is based on considering the intrinsic emission due to self-trapped exciton (STE) decay with the transient O-O (oxygen–oxygen) bond formation. The second one is based on the role of Li ions in the emission process.     

Adsorbate band dispersions for C on Ru(0001)

We have studied carbon-induced two-dimensional energy bands on Ru(0001) using angleresolved photoelectron spectroscopy and have compared them with ab initio calculations. We find a nearly parabolic band (bottom at E_F ?9.8 eV at k_∥ = 0, effective mass ～ 1.5 m_e) which we assign to the C 2p_z valence states of a graphitic carbon overlayer. Compared to graphite, these states are bound more tightly by 2.3 eV.     

Characterization of CBD-CdSe1-ySy deposited at low-temperature for photovoltaic applications

We present the structural and optical characterization of cadmium selenide sulphur (CdSe_1-yS_y) deposited by chemical bath deposition (CBD) technique at low-temperature (20 ± 2 °C). The sulphur molar fraction is varied from 0 to 42.13%. The chemical stoichiometry is estimated by energy-dispersive X-ray spectroscopy (EDS). The CdSe_1-yS_y shows hexagonal wurtzite crystalline phase, which was found by X-ray diffraction (XRD) analysis and it was confirmed by Raman spectroscopy. The average grain size of the CdSe_1-yS_y films was ranged from 1.20 to 1.68 nm that was determined by Debye-Scherrer equation from W(002) direction and it was confirmed by high resolution transmission electron microscopy (HRTEM). This average grain size indicates a high quantum confinement because of it is smaller than the Bohr radii of CdS (2.8 nm) and CdSe (4.9 nm). Raman spectra show two dominant vibrational bands about 208 and 415 cm⁻¹ associated at CdSe-1LO-like and CdSe-2LO-like. By transmittance measurements at room temperature are found that the optical band gap energies vary from 1.86 to 2.16 eV in the range of investigated sulphur molar fraction. Room temperature photoluminescence shows radiative bands in the visible range and a dominant band in the UV range, approximately 3.0 eV, which can be associated with a radiative transition, bound exciton to donor impurity.     

Valence band states of semi-magnetic semiconductors: Cd1-xMnxTe

Valence band electron states of Cd_1-xMn_xTe mixed crystals were determined over the composition range 0?x?0.7 by ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). A peak at 3.5 eV binding energy (BE) whose magnitude increases with the manganese mole fraction x was identified as originating from the Mn 3d⁵ level. A previously reported structure at 6.5 eV BE was also observed for x>0.4; it is, however, believed to be a satellite of the 3.5 eV peak originating from a shake-up process.     

Study on the structure and optical property of Zn1−xCuxO sol–gel thin films on quartz substrate

Zn_1−xCu_xO thin films (x=0, 1.0, 3.0, 5.0%) are prepared on quartz substrate by sol–gel method. The structure and morphology of the samples are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results show that Cu ions were effectively penetrated into the ZnO crystal lattices with substitutional and interstitial impurities to form stable solid solutions without changing the polycrystalline wurtzite structure. Two peaks at 420 nm (2.95 eV, violet), 485 nm (2.56 eV, blue) have been observed from the photoluminescence (PL) spectra of the samples. It is concluded that the violet peak may correspond to the exciton emission; the blue emission corresponds to the electron transition from the bottom of the conduction band to the acceptor level of zinc vacancy. The optical test shows that the optical band gap E_g is decreased with the increase amount of Cu doping in ZnO. The band gap decrease from 3.40 eV to 3.25 eV gradually. It is also found that the transmission rate is increased rapidly with the increase of Cu ions concentration.     

Low-field mobilities of rare-earth metals

The KLL Auger spectrum of Ni generated in the electron capture decay of radioactive ⁶⁴Cu in a solid state matrix was measured for the first time using a combined electrostatic electron spectrometer adjusted to a 7 eV instrumental resolution. Energies and relative intensities of the all nine basic spectrum components were determined and compared with data obtained from X-ray induced spectra of metallic Ni and with theoretical results as well. Absolute energy of 6562.5 ± 1.3 eV (related to the Fermi level) measured for the dominant KL₂L₃(¹D₂) than a value obtained from the X-ray induced spectra which is probably caused by the effects of chemical bonding and physico-chemical environment. Moreover, it is higher by 20.4 eV (16??) than a prediction of the semi-empirical calculations by Larkins which indicates an influence of the ??atomic structure effect?? on absolute energies of the Auger transitions following the electron capture decay and, possibly, some imperfections in the calculations. Good agreement of the measured and predicted KL₁L₂(³P₀/¹P₁) transition intensity ratios indicates perceptible influence of the relativistic effects on the KLL Auger spectrum even at Z = 28.