射频磁控溅射法制备SnO2:Sb薄膜的结构和光致发光性质研究

采用射频磁控溅射法在玻璃衬底上制备出锑掺杂的氧化锡(SnO2:Sb)薄膜.制备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄,晶粒生长的择优取向为[110].室温下光致发光测量结果表明,在392 nm附近存在强的紫外-紫光发射,研究了不同氧分压对薄膜结构及发光性质的影响,并对SnO2:Sb的光致发光机制进行了探索性研究.     

蓝宝石衬底SnO2:Sb薄膜的制备及结构和光致发光性质

用射频磁控溅射法在蓝宝石(0001)衬底上制备出锑掺杂的氧化锡(SnO₂:Sb)薄膜.对制备薄膜的结构和发光性质进行了研究.制备样品为多晶薄膜，具有纯SnO₂的四方金红石结构.室温条件下对样品进行光致发光测量，在334 nm附近观测到紫外发射峰，并对SnO₂:Sb的光致发光机制进行了研究.     

射频磁控溅射法制备SnO2:Sb薄膜的结构和光致发光性质研究

采用射频磁控溅射法在玻璃衬底上制备出锑掺杂的氧化锡（SnO2₂:Sb）薄膜.制 备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄，晶粒生长的择优取向为［110］.室温下光致发光测量结果表明，在392nm附近存在强的紫外-紫光发射.研究了不同氧分压对薄膜结构及发光性质的影响，并对SnO2₂:Sb的光致发光机制进行了探索性研究.     

退火处理对SnO2薄膜光致发光性质的影响

实验研究表明,SnO2薄膜经过退火处理后其光致发光谱有明显的变化。在氧和氮两种不同气氛中进行热处理,其变化也有差异。这种变化主要是由于SnO2膜中氧空位和自由载流于浓度变化所致。     

有机衬底SnO2:Sb透明导电膜的制备与特性研究

常温下,采用射频磁控溅射法在有机的柔性衬底上制备出了SnO2:Sb透明导电膜,并对薄膜的结构和光电性质进行了研究.制备的样品为多晶薄膜,并且保持了二氧化锡的金红石结构.性能良好的薄膜电阻率为6.5×10-3Ω·cm,载流子浓度为1.2×1020cm-3,霍耳迁移率是9.7cm2·V-1·s-1.薄膜在可见光区的平均透过率达到了85%. 关键词： 柔性衬底 SnO2:Sb透明导电膜 射频磁控溅射法     

纳米SiCN薄膜的制备和光致发光

采用磁控溅射技术制备了SiCN薄膜,利用傅里叶红外光谱仪、扫描探针显微镜、荧光分光光度计对薄膜结构、表面形貌、光致发光进行了表征.结果表明SiCN薄膜有良好的发光性质,通过对薄膜的红外光谱及光致发光谱分析可知,当氩气和氮气流量比为4:1时,最有利于SiCN薄膜的生成,PL发光峰强度也达到最大值,SiCN薄膜的光发射主要来源于带-带直接辐射复合及导带底到缺陷态辐射跃迁.     

SnO2:Eu3+纳米晶的水热法制备及发光性能

采用水热法制备了Eu3+掺杂SnO2纳米发光粉,样品在不同温度下热处理得到不同粒径尺寸的纳米颗粒.利用X射线衍射(XRD)与光致发光(PL)谱对样品进行表征.XRD分析表明:SnO2:Eu3+样品均为纯相金红石结构.PL测量表明:水热法直接制备的样品的激发谱由Eu3+的f-f本征激发峰组成,而经过热处理后样品的激发谱由O2--Eu3+电荷迁移带和Eu3+的f-f本征激发组成;样品的发光强度与颗粒大小有密切关系.     

Cd2SnO4薄膜光致发光某些性质的研究

本文研究了Cd2SnO4薄膜光致发光的某些性质.Cd2SnO4膜是利用Cd-Sn合金靶在Ar+O2气氛中反应溅射而成的.实验研究表明,Cd2SnO4膜的发光峰值随着氧浓度的增加移向长波方向.这是因为氧浓度的增加,减少了膜中的氧空位,导致了导带中电子浓度的减小,致使Burstein-Moss效应和电子散射作用相对减弱,从而改变了带隙宽度.     

不同Sb含量p-SnO2薄膜的制备和特性

采用化学气相沉积方法, 利用Sb₂O₃/SnO作为源材料, 在蓝宝石衬底上制备出不同Sb掺杂量的SnO₂薄膜, 并在此基础上制作出p-SnO₂:Sb/n-SnO₂同质p-n 结器件. 研究表明, 随着Sb含量的增加, 样品表面变得平滑, 晶粒尺寸逐渐增大, 且晶体质量有所改善, 发现少量Sb的掺入可以起到表面活化剂的作用. Hall测量结果证实适量Sb的掺杂可以使SnO₂呈现p型导电特性, 当Sb₂O₃/SnO的质量比为1:5时, 其电学参数为最佳值. 此外, p-SnO₂:Sb/n-SnO₂同质p-n结器件展现出良好的整流特性, 其正向开启电压为3.4 V.     

退火对ZnO薄膜的结构和光学性质的影响

采用射频磁控溅射法在Si衬底上制备了高c轴择优取向的ZnO薄膜,研究了退火对ZnO薄膜的晶粒尺度和发光光谱的影响。XRD结果显示退火可以改善ZnO薄膜的结构特性,PL谱结果显示退火对ZnO薄膜的发光强度产生很大影响。     

Dielectric properties of Sb2O3 films

A study has been made of the dielectric constant, dielectric loss, electrical conductivity in weak and strong fields, and the dielectric strength of polycrystalline Sb₂O₃ films produced by vacuum evaporation. Electronic polarization is shown to dominate in these films. The nonlinear voltage dependence of the current in strong fields is easily explainable in terms of a Frenkel mechanism for electrostatic ionization. The film breakdown is due to impact ionization of impurities and the formation of a shower.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 5, pp. 52–55, May, 1969.     

Structural and photoluminescence properties of SnO2 obtained by thermal oxidation of evaporated Sn thin films

Tin oxide films have been prepared by oxidation of Sn thin films deposited by thermal evaporation method onto glass substrates. The oxidation of films was done, in air at a temperature of 500 °C, from 20 to 120 min. The oxidized films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), photoluminescence spectroscopy (PL) and surface profilometer. The XRD patterns show that the crystalline structure of the oxidized Sn films improves with the annealing time. The tetragonal SnO₂ phase (cassiterite) was obtained after 120 min of annealing with grains sizes between 15 and 20 nm. The thickness of oxide films, as function of the annealing time, follows a parabolic law. The O/Sn atomic ratio increases with the annealing time indicating an improvement of the films quality. Tin interstitials defects density, calculated from PL spectra using Smakula's formula, was found to decrease with the increasing annealing time. Tin interstitials defects density was found proportional to the increasing oxygen density (deduced from RBS). A fit of this proportionality allowed us to quantify the tin cations and oxygen anions diffused through the oxide films.     

Effects of Sb doping on the structure and properties of SnO2 films

Transparent heat-insulating SnO₂ films were prepared on the glass substrate with sol-gel. The effects of Sb doping on the structure and photoelectric properties of the films were investigated. The films were characterized by scanning electron microscope (SEM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet–Visible-Near Infrared Spectrometer (UV-VIS-NIR) and Hall Effect tester. The results show that the doping of Sb did not change the basic crystal structure of the SnO₂ film, but reduced the crystallinity of the film. With the increase of Sb doping, the grain size decreases first and then maintains basically invariable. The sheet resistance of the film decreases first and then increases. The transmittance of the substrate glass coated with this film (hereinafter referred to as the film's transmittance) in the near-infrared region (780–2500 nm) decreases from 92.55% to 60.48%, and increases a little when the doping amount exceeded 11 mol%. And its transmittance of visible light (380–780 nm) fluctuated slightly between about 81% and 86%.     

Structural,dielectric and photoluminescence properties of co-precipitated Zn-doped SnO2 nanoparticles

Zn-doped SnO₂ nanoparticles were prepared by the chemical co-precipitation route. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses of these prepared nanoparticles were carried out for structural and morphological studies. All the samples have been found to have tetragonal rutile structure of the polycrystalline SnO₂ having crystallite size in the range 13–25 nm. TEM micrographs show agglomeration of nanoparticles in all the samples. At a particular temperature, the dielectric constant of all the samples has been found to decrease with increasing frequencies which may be due to rapid polarization processes occurring in SnO₂ nanoparticles. The ac conductivity, σ (ω), has been found to vary with frequency according to the relation σ (ω) ∝ ω^S. The value of S has been found to be temperature dependent, decreasing with increasing frequency which suggests that a hopping process is the most likely conduction mechanism in these nanoparticles. The room temperature photoluminescence (PL) spectra of the undoped and Zn-doped SnO₂ nanoparticles consist of the near band-edge ultraviolet (UV) emission and the defect related visible emissions. The origin of emission peaks in the visible region is attributed to oxygen-related defects that are introduced during growth.     

Structural and spectral properties of SnO2 nanocrystal prepared by microemulsion technique

Extrafine SnO₂ nanocrystals as small as 2.4 nm were synthesized by the microemulsion method. The grain sizes and crystallization process were measured and investigated by X-ray diffraction. Two growth processes were proposed, and the activation energies of 4.3 and 23 KJ/mol were obtained for respective low-and fast-growth processes. TEM micrographs and the selected-area diffraction recorded their morphology and crystallization, well crystallized at about 773 K. All the IR modes measured by FT-IR spectrometer were assigned. The 616 cm^-1 mode after annealing at 673 K showed fine crystallization. The temperature dependence of the Raman spectra shows that increase in intensity and decrease in linewidth of the 636 cm^-1 mode with the increasing grain size indicate a phonon confinement effect. A new 330 cm^-1 Raman mode originally inactive in bulk, was observed in the SnO₂ nanocrystal by size effect. A low frequency mode at 76 cm^-1 shifts to 38 cm^-1 as the temperature goes up 873 K, which can be characterized to determine the SnO₂ grain sizes. PACS 61.46.+w; 61.10.-i; 78.30.-j; 81.20.-n