Spin-Filtering Transport in Double Parallel Quantum Wires on a Graphene Sheet

We theoretically investigate the spin filtering transport of double parallel quantum wires(QWs) side-coupled to a grapheme sheet and sandwiched between two ferromagnetic(FM) leads.The dependences of the wire-graphene coupling strength,wire-wire coupling strength,as well as the spin polarization of the ferromagnetic leads are studied.It is found that the wire-graphene coupling strength tends to reduce the current and the wire-wire coupling strength can first reinforce and then decrease the current.The spin polarization strength has an enhanced(identical) effect on the current under the parallel(anti-parallel) alignment of the FM leads,which gives rise to an obvious spin-filter and tunnel magnetoresistance(TMR) effect.Our results suggest that such a theoretical model can stimulate some experimental investigations about the spin-filter devices.     

Electrical detection of spin pumping due to the precessing magnetization of a single ferromagnet

We report direct electrical detection of spin pumping, using a lateral normal-metal/ferromagnet/normal-metal device, where a single ferromagnet in ferromagnetic resonance pumps spin-polarized electrons into the normal metal, resulting in spin accumulation. The resulting backflow of spin current into the ferromagnet generates a dc voltage due to the spin-dependent conductivities of the ferromagnet. By comparing different contact materials (Al and/or Pt), we find, in agreement with theory, that the spin-related properties of the normal metal dictate the magnitude of the dc voltage.     

Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a singlemolecule magnet sandwiched between the nonmagnetic and ferromagnetic(FM) leads. By applying different voltage pulses Vwriteacross the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_(probe). It is shown that the polarization of the spin current is extremely high(up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.     

Subwavelength terahertz spin-flip laser based on a magnetic point-contact array

We present a theoretical design for a single-mode, truly subwavelength terahertz disk laser based on a nanocomposite gain medium comprising an array of normal-metal/ferromagnetic (FM) point contacts embedded in a thin dielectric layer. Stimulated emission of light occurs due to spin-flip relaxation of spin-polarized electrons injected from the FM side of the contacts. Ultrahigh electrical current densities in the contacts and a dielectric material with a large refractive index, neither condition being achievable in conventional semiconductor media, enables the thresholds of lasing to be overcome for the lowest-order modes of the disk, making single-mode operation possible.     

Thermal Bias on the Pumped Spin-Current in a Single Quantum Dot

Temperature effect on the spin pump in a single quantum dot (QD) connected to Normal (NM) and/or Ferromagnetic (FM) leads is investigated with the help of master equation method. Results show that the magnitude and the direction of the temperature difference between the source (L) and drain (R) leads have great impact on the spin current processes. In practical devices, the thermal bias is quite general and then our results may be useful in quantum information processing and spintronics.     

Thermal Bias on the Pumped Spin-Current in a Single Quantum Dot

Temperature effect on the spin pump in a single quantum dot(QD) connected to Normal(NM) and/or Ferromagnetic(FM) leads is investigated with the help of master equation method. Results show that the magnitude and the direction of the temperature difference between the source(L) and drain(R) leads have great impact on the spin current processes. In practical devices, the thermal bias is quite general and then our results may be useful in quantum information processing and spintronics.     

Controllable Spin Polarization of Charge Current by Rashba Spin Orbital Coupling

We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic four-terminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas (2DEG) with Rashba spin orbital interaction (RSOI), one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Büttiker formalism, we found that when alongitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.     

Spin incommensurability and two phase competition in cobaltites

The perovskite LaCoO3 evolves from a nonmagnetic Mott insulator to a spin cluster ferromagnet (FM) with the substitution of Sr2+ for La3+ in La1-xSrxCoO3. The clusters increase in size and number with x and the charge percolation through the clusters leads to a metallic state. Using elastic neutron scattering on La1-xSrxCoO3 single crystals, we show that an incommensurate spin superstructure coexists with the FM spin clusters. The incommensurability increases continuously with x, with the intensity rising in the insulating phase and dropping in the metallic phase as it directly competes with the commensurate FM, itinerant clusters. The spin incommensurability arises from local order of Co3+-Co4+ clusters but no long-range static or dynamic spin stripes develop. The coexistence and competition of the two magnetic phases explain the residual resistivity at low temperatures in samples with metalliclike transport.     

Dynamic exchange coupling in magnetic bilayers

A long-range dynamic interaction between ferromagnetic films separated by normal-metal spacers is reported, which is communicated by nonequilibrium spin currents. It is measured by ferromagnetic resonance and explained by an adiabatic spin-pump theory. In such a resonance the spin-pump mechanism of spatially separated magnetic moments leads to an appreciable increase in the resonant linewidth when the resonance fields are well apart, and results in a dramatic linewidth narrowing when the resonant fields approach each other.     

Electrically tunable spin polarization in a carbon nanotube spin diode

We have studied the current through a carbon-nanotube quantum dot with one ferromagnetic and one normal-metal lead. For the values of gate voltage at which the normal lead is resonant with the single available nondegenerate energy level on the dot, we observe a pronounced decrease in the current for one bias direction. We show that this rectification is spin dependent, and that it stems from the interplay between the spin accumulation and the Coulomb blockade on the quantum dot. The degree of resulting spin polarization is fully and precisely tunable using the gate and bias voltages.     

The Andreev tunneling behaviors in the FM/QD/SC system with intradot spin-flip scattering

The resonant behaviors of spin-dependent linear AR conductance, the spin-dependent AR current, the electron occupation number and spin accumulation in the QD are theoretically investigated in the FM/QD/SC system with intradot spin-flip scattering. The novel resonant behaviors of spin-dependent AR conductance versus Fermi energy are revealed, which are rather different from the AR conductance versus the dot's energy level case [Cao et al., Phys. Rev. B 70 (2004) 235341]. It is proved that the split of the resonant peak can be induced by the competition between the coupling strengths to the FM and SC leads, the intradot spin-flip scattering, and the gate voltage. The number, the widths, and the distance of the peaks could be controlled by tuning the relevant parameters. The resonance of AR current can take place only when the energy level of QD lines up with the right lead chemical potential and blows the left lead chemical potential. The magnitude of the resonant AR current depends on the number of resonant levels involved in the Andreev tunneling process. It is also proved that the spin-flip scattering can suppress the spin accumulation effectively, and induce the spin polarization of AR conductance and AR current simultaneously. The results make us understand better the fundamental in this system, and are useful for the design of spintronic devices.     

A bias-tunable electron-spin filter based on a hybrid ferromagnetic-Schottky-metal and semiconductor nanostructure

Recently, an electron-spin filter was proposed by depositing two ferromagnetic stripes and a Schottky normal-metal stripe on top of a heterostructure [H.Z. Xu, Q.Q. Yan, Phys. Lett. A 372 (2008) 6216]. Here, we apply a bias to this device, and find that both magnitude and sign of the electron-spin polarization are sensitive to the applied bias, which can result in a bias-tunable spin filter.     

Spin Josephson current in a ferromagnet/noncentrosymmetric superconductor junction

We investigate the equilibrium spin transport in a ferromagnet/noncentrosymmetric superconductor (FM/NCS) junction where the NCS has a dominant triplet order parameter and helical edge state. Based on the symmetry analysis and numerical calculation, we demonstrate that there is a nonzero spin supercurrent flowing in the junction, which stems from the exchange coupling between the FM magnetization and triplet Cooper-pair spin. It is also found that a transverse spin current other than the helical edge spin current is flowing along the interface of the junction, and its polarization is related to the longitudinal spin supercurrent. Besides, an equilibrium Hall current is also shown to flow along the junction’s interface due to the broken time-reversal symmetry from the FM.     

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） system

From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.     

Magnetization reversal and spin accumulation in nonmagnetic metals by spin injection from lateral Co/Cu,Co/Al heterojunctions

We have fabricated ferromagnetic/nonmagnetic (FM/NM) metal heterojunctions for the detection of the spin accumulation effect in different nonmagnetic metals. To understand the effect of spin accumulation in more detail, the switching behavior of the ferromagnetic wires was studied by means of magnetoresistance (MR) measurements and Monte Carlo simulations (MC). The polycrystalline heterojunctions were prepared by high-resolution electron beam lithography (HR-EBL) and a special oblique evaporation technique. The ferromagnetic (FM) and the nonmagnetic (NM) metal were evaporated on top of each other in a single-evaporation step to achieve an interface between the two metals of high quality. To verify the quality of the interface, we measured the spin accumulation effect in nonmagnetic copper (Cu) and aluminum (Al) and determined the spin polarization of the current at the interface between the ferromagnetic and nonmagnetic metals.     

Quantum pumping in helimagnet heterostructures

Spin-dependent diffraction occurs in helimagnet-related transport processes. In this work, we investigated quantum pumping properties in the normal-metal/helimagnet/normal-metal heterostructure driven by two out of phase time-dependent gate potentials. At the condition when one of the diffracted beams goes out of the horizon the pumped charge and spin currents demonstrate sharp dips and rises as a function of the helimagnet spiral wave vector q. At small and large q?s, the transmission and pumping properties approach the behaviors of a ferromagnet and an insulating barrier, respectively. For different helimagnet spiral periods, the diffracted angles are different. As a result, the pumped charge and spin currents demonstrate multiple maximal and minimal peaks as a function of q, hence, sensitively depend on the helimagnet spin configuration. All the pumping properties can be interpreted by the quantum gate-switching mechanisms.     

Kinetics of magnetization reversal in a heterophase nanomagnet with spatially modulated anisotropy

Magnetization reversal modes in a thin-film NiFeCuMo ferromagnet (FM) with periodically varying in-plane anisotropy are studied by the magneto-optical indicator film (MOIF) technique. The uni-directional anisotropy in FM regions exchange-coupled to a FeMn antiferromagnet (AFM) film in the form of square mesh stripes is alternated by the uniaxial anisotropy in the FM regions inside this mesh. It is shown that the boundaries formed along the edges of these stripes, which separate FM regions with different anisotropy, crucially influence the kinetics of domain-structure transformation in both types of FM regions. It is established that the lateral exchange anisotropy in the ferromagnet, which is determined by the stabilization of the spin distribution in the FM layer along the FM-(FM/AFM) interface, leads to the asymmetry of the magnetization reversal in FM regions bordered with an FM/AFM structure. Anisotropy of the mobility of 180-degree “charged” and “uncharged” domain walls situated, respectively, perpendicular and parallel to the unidirectional anisotropy axis is revealed. The difference observed between the mobilities of charged and uncharged domain walls is attributed to the difference in the spin distribution in these walls with respect to the unidirectional anisotropy axis and is a key factor for the difference between the magnetization reversal kinetics in horizontal and vertical exchange-biased FM stripes. Drastic differences are revealed in the asymmetry of magnetization reversal processes in mutually perpendicular narrow stripes of FM/AFM structures. Possible mechanisms of magnetization reversal in low-dimensional FM-(FM/AFM) heterostructures are discussed with regard to the effect of domain walls localized on the edges of AFM layers.     

Observation of spin-selective tunneling in SiGe nanocrystals

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.     

界面铁掺杂锯齿形石墨烯纳米带的自旋输运性能

基于密度泛函理论第一原理系统研究了界面铁掺杂锯齿(zigzag)形石墨烯纳米带的自旋输运性能, 首先考虑了宽度为4的锯齿(zigzag)形石墨烯纳米带, 构件了4个纳米器件模型, 对应于中心散射区的长度分别为N=4, 6, 8和10个石墨烯单胞的长度, 铁掺杂在中心区和电极的界面. 发现在铁磁(FM)态, 四个器件的β自旋的电流远大于α自旋的电流, 产生了自旋过滤现象; 而界面铁掺杂的反铁磁态模型, 两种电流自旋都很小, 无法产生自旋过滤现象; 进一步考虑电极的反自旋构型, 器件电流显示出明显的自旋过滤效应. 探讨了带宽分别为5和6的纳米器件的自旋输运性能, 中心散射区的长度为N=6个石墨烯单胞的长度, FM 态下器件两种自旋方向的电流值也存在较大的差异, β自旋的电流远大于α自旋电流. 这些结果表明: 界面铁掺杂能有效调控锯齿形石墨烯纳米带的自旋电子, 对于设计和发展高极化自旋过滤器件有重要意义.     

Tunable spin current through a T-shaped double quantum dot molecule

We present a spin current generator based on a T-shaped double quantum dot (TDQD) molecule connected with two leads, and the coherent spin-flip effect is taken into account within the TDQD. The spin current from the right output terminal is obtained, more importantly, the properties of the spin current are investigated in detail, these results offer us a way to manipulate the spin current with the system parameters.