Optical properties of individual manganese-doped quantum dots

The magnetic state of a single magnetic ion (Mn²⁺) embedded in an individual quantum dot is optically probed using micro-spectroscopy. The fine structure of a confined exciton in the exchange field of a single Mn²⁺ ion (S=) is analyzed in detail. The exciton–Mn²⁺ exchange interaction shifts the energy of the exciton depending on the Mn²⁺ spin component and six emission lines are observed at zero magnetic field. The emission spectra of individual quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom. The observed behavior in both zero field and under magnetic field can be explained quantitatively by the interplay between the exciton–Mn²⁺ exchange interaction (dependent on the Mn position) and the anisotropic part of the electron–hole exchange interaction (related to the asymmetry of the quantum dot).     

Giant optical anisotropy in single InAs quantum dots

We present the experimental evidence of giant optical anisotropy in single InAs QDs. Polarization-resolved photoluminescence spectroscopy in single QDs reveals a linear polarization ratio which fluctuates, from one dot to another, in sign and in magnitude with absolute values up to 82%. We do not observe any dependence of the linear polarization on incident power and temperature.     

Coherent dynamics in InGaAs quantum dots and quantum dot molecules

We measure the dephasing time of the exciton ground state transition in InGaAs quantum dots (QD) and quantum dot molecules (QDM) using a sensitive four-wave mixing technique. In the QDs we find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400 ps up to 2 ns in a series of annealed QDs with increasing energy separation of 69–330 meV from the wetting layer continuum. Furthermore, the distribution of the fine-structure splitting δ₁ and of the biexciton binding energy δ_B is measured. δ₁ decreases from 96 to with increasing annealing temperature, indicating an improving circular symmetry of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole. In the QDM we measured the exciton dephasing as function of interdot barrier thickness in the temperature range from 5 to 60 K. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed, showing how the quantum mechanical coupling in the molecules affects the exciton lifetime and acoustic-phonon interaction.     

Optical characterization of quantum dots entrained in microstructured optical fibers

We present a study of the basic optical properties of colloidal CdSe/ZnS core/shell quantum dots entrained in a microstructured optical fiber. Quantum dots suspended in heptane were pulled into the holes surrounding the solid core of a microstructured optical fiber of the holey fiber class via capillary action and are found to remain in the fiber. In this experiment, a laser coupled into the fiber photoexcited quantum dots along the length of the fiber. Quantum dot emission was observed to couple into the fiber core and propagate along the fiber. To investigate the use of such a system in fiber-based light generation or amplification, a second laser overlapping the low-energy portion of the quantum dot emission was simultaneously coupled into the fiber. We observed apparent amplification of this light when photoexciting the quantum dots well above their bandedge.     

Electroluminescence of colloidal ZnSe quantum dots

The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet).     

Inversion of the exciton fine structure splitting in quantum dots

The fine structure splitting of exciton state was measured for a large number of single InAs quantum dots in GaAs. It is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Degeneracy of the exciton spin states is an important step to producing entangled photons from the biexciton cascade. Thermal annealing reduces the exciton confinement and thereby increases the number of degenerate dots in a particular sample.     

Optical spectroscopy of single InAs/InP quantum dots around λ=1.55 μm

We discuss the preparation and spectroscopic characterisation of a single InAs/InP quantum dot suitable for long-distance quantum key distribution applications around λ=1.55 μm. The dot is prepared using a site-selective growth technique which allows a single dot to be deposited in isolation at a controlled spatial location. Micro-photoluminescence measurements as a function of exciton occupation are used to determine the electronic structure of the dot. Biexciton emission, shell filling and many-body re-normalization effects are observed for the first time in single InAs/InP quantum dots.     

Incorporating fluorescent quantum dots into water-soluble polymer

The fluorescent quantum dot-polymer composites were fabricated by incorporating thioglycolic acid capped CdTe quantum dots into polyacrylamide via cross-linking agents. The CdTe-polyacrylamide composites were characterized by fluorescence spectrophotometer and fluorescence microscope. The result shows that the quantum dot-polymer composites show strong photoluminescence in aqueous solution. The photoluminescence spectrum of quantum dot-polymer composites exhibits a slight blue shift compared to that of initial CdTe quantum dots. The slight shift might be attributed to the covalently bonding between the carboxyl groups of thiolglycolic acid capped on CdTe quantum dots and the amide groups of the polyacrylamide chains.     

Splitting and storing excitons in strained coupled self-assembled quantum dots

We present a novel self-assembled quantum dot structure designed to spatially separate and store photo-generated electrons and holes in pairs of strain coupled quantum dots. The spatial separation of electron–hole pairs into quantum dots and strain-induced quantum dots has been investigated and verified by photoluminescence experiments. Results from time-resolved PL demonstrates that at low temperatures (3 K) the electron–hole pair can be stored for several seconds.     

Recombination processes in structures with GaN/ALN quantum dots

Mechanisms of the generation and the radiative and nonradiative recombination of carriers in structures with GaN quantum dots in the AlN matrix are studied experimentally and theoretically. Absorption, stationary and nonstationary photoluminescence of quantum dots at different temperatures are investigated. It is found that the photoluminescence intensity considerably decreases with the temperature while the photoluminescence kinetics weakly depends on the temperature. The photoluminescence kinetics is shown to be determined by radiative recombination inside quantum dots. A mechanism of nonradiative recombination is proposed, according to which the main reason for the thermal quenching of photoluminescence is nonradiative recombination of charge carriers, generated by optical transitions between quantum dots and wetting layer states.     

Carrier dynamics in strain-induced InGaAsP/InP quantum dots

Carrier dynamics of strain-induced InGaAsP/InP quantum dots (QDs) is investigated. In this structure, self-assembled InAs islands on the surface act as stressors and create a lateral confinement potential in the near surface InGaAsP/InP quantum well. Photoluminescence (PL) measurements reveal that decreasing the distance from the QD to the surface significantly diminishes the QD–PL intensity, presumably due to surface states of the InAs islands. Moreover, time-resolved measurements show a faster decay of the QD–PL with decreasing distance. To analyze the carrier dynamics, rate equation model is applied and surface state-related transitions are taken into account. The model is found to agree with measurements, and thus provides a possible explanation for the observed temporal behavior of the carriers.     

CdSSe quantum dots: effect of the hydrogen RF plasma treatment on exciton luminescence

This work deals with effective passivation of CdS_XSe_1−X quantum dot surface after treating it by low-temperature hydrogen RF plasma. An enhancement of the exciton luminescence was observed, which can be interpreted as consequence of a decreasing number of surface non-radiative traps.     

Sonoelectrochemical synthesis of water-soluble CdTe quantum dots

A facile and fast one-pot method has been developed for the synthesis of CdTe quantum dots (QDs) in aqueous phase by a sonoelectrochemical route without the protection of N₂. The morphology, structure and composition of the as-prepared products were investigated by high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and energy dispersive X-ray spectrometer (EDS). The influences of current intensity, current pulse width, and reaction temperature on the photoluminescence (PL) and quantum yield (QY) of the products were studied. The experimental results showed that the water-soluble CdTe QDs with high PL qualities can be conveniently synthesized without precursor preparation and N₂ protection, and the PL emission wavelength and QY can be effectively controlled by adjusting some parameters. This method can be expected to prepare other QDs as promising building blocks in solar cell, photocatalysis and sensors.     

Quantum confined Stark effect in single self-assembled GaN/AlN quantum dots

We have experimentally and theoretically investigated quantum confined Stark effect in hexagonal self-assembled GaN/AlN quantum dots. We have observed a blueshift of up to 100 meV for vertical electric field applied against the built-in electric field while we have observed a redshift for the electric field along the built-in field. The experimental result is compared with a charge self-consistent effective mass calculation, taking into account strain, piezoelectric charge, and pyroelectric charge. The tunability of the emission energy and the exciton binding energy is discussed.     

Spectroscopy on single columns of vertically aligned InAs quantum dots

We have investigated the carrier relaxation dynamics in single columns of tenfold stacked vertically aligned InAs quantum dots by micro-photoluminescence measurement. The excitation spectrum in the stacked dots is much different from that in the single dot characterized by the existence of a zero-absorption region and sharp multiple phonon emission lines. We have observed a broad continuum absorption far below the wetting layer band edge in the spectrum of the single columns although we have confirmed the existence of a zero-absorption region in the same sample with reduced number of dot layers to almost single, realized by surface etching. The broad absorption feature suggests the existence of additional carrier relaxation channels through non-resonant tunneling between the dots.     

Optical modelling of quantum dots

The analogy between quantum mechanics and electromagnetism is used to design an optical waveguide with the same transmission and traversal time as a quantum dot. Two different quantum dot geometries are considered for two typical applications: ultrafast devices and computing.     

A sol-gel method for preparing ZnO quantum dots with strong blue emission

ZnO quantum dots (QDs) with strong blue emission have been successfully synthesized by sol-gel method, and their crystal structures, sizes, and photoluminescence properties were characterized by X-ray diffractometer, scanning electron microscope, and ultraviolet-visible spectroscopy. It has been found that ZnO QDs had a hexagonal wurtzite crystal structure, and their average diameter was about 16.0-32.2 nm. Both the reaction time and temperature were found to have a strong influence on the average size and photoluminescence properties of ZnO QDs. Longer reaction time and higher reaction temperature resulted in larger average size for ZnO QDs. It has been shown that at reaction temperature 60 °C the emission intensity for ZnO QDs increased first with reaction time before 7 h and then decreased after 7 h. For the same reaction time 7 h, ZnO QDs synthesized at 60 °C showed the strongest emission intensity. It was found that annealing in nitrogen, vacuum, and air all resulted in an increase of the size of ZnO QDs and a reduction in their photoluminescence. The dependence of the size and properties of ZnO QDs on the reaction parameters as well as the annealing conditions has been discussed.     

Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance

We studied self-assembled InAs/GaAs quantum dots by contrasting photoluminescence and photoreflectance spectra from 10 K to room temperature. The photoluminescence spectral profiles comprise contributions from four equally separated energy levels of InAs quantum dots. The emission profiles involving ground state and excited states have different temperature evolution. Abnormal spectral narrowing occurred above 200 K. In the photoreflectance spectra, major features corresponding to the InAs wetting layer and GaAs layers were observed. Temperature dependences of spectral intensities of these spectral features indicate that they originate from different photon-induced modulation mechanisms. Considering interband transitions of quantum dots were observed in photoluminescence spectra and those of wetting layer were observed in photoreflectance profiles, we propose that quantum dot states of the system are occupied up to the fourth energy level which is below the wetting layer quantum state.     

Anomalous quantum Hall effect induced by nearby quantum dots

Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, ρ_xx, and Hall resistance, ρ_xy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate . The results indicate that the electron state in QDs induces spin-flip process in 2DES.     

Luminescence study of Si/Ge quantum dots

We present a photoluminescence (PL) study of Ge quantum dots embedded in Si. Two different types of recombination processes related to the Ge quantum dots are observed in temperature-dependent PL measurements. The Ge dot-related luminescence peak near 0.80 eV is ascribed to the spatially indirect recombination in the type-II band lineup, while a high-energy peak near 0.85 eV has its origin in the spatially direct recombination. A transition from the spatially indirect to the spatially direct recombination is observed as the temperature is increased. The PL dependence of the excitation power shows an upshift of the Ge quantum dot emission energy with increasing excitation power density. The blueshift is ascribed to band bending at the type-II Si/Ge interface at high carrier densities. Comparison is made with results derived from measurements on uncapped samples. For these uncapped samples, no energy shifts due to excitation power or temperatures are observed in contrast to the capped samples.