Radio-frequency muon spin resonance studies of endohedral and exohedral muonium adducts of fullerenes

The radio-frequency muon spin resonance technique (RF-μSR) is described, with examples drawn from muon studies of fullerences. Two distinct species can be detected by RF-μSR when solid C₆₀ is irradiated with positive muons. Endohedral muonium (Mu@C₆₀) is characterized by a muon hyperfine constant (A _μ) close to the vacuum value. A remarkable feature of the RF-μSR spectrum is the double quantum transition, which appears when the allowed transitions are saturated. The exohedral muonium adduct (C₆₀Mu) is also detected, and has a much smaller value ofA _μ typical of a carbon-centred organic radical. It has been studied by RF-μSR in dilute solution, which is not possible for transverse field muon spin rotation (TF-μSR). There is a significant difference inA _μ of C₆₀Mu in the solid and in solution, a result of great import to the analysis of avoided-level crossing experiments on¹³C₆₀Mu.     

Elemental depth profiling of a-Si1−xGex:H films by elastic recoil detection analysis and secondary ion mass spectrometry

The hydrogen content in a-Si_1−xGe_x:H thin films is an important factor deciding the density and the optical band gap. We measured the elemental depth profiles of hydrogen together with Si and Ge by elastic recoil detection analysis (ERDA) combined with Rutherford backscattering (RBS) using MeV He²⁺ ions. In order to determine the hydrogen depth profiles precisely, the energy- and angle-dependent recoil cross-sections were measured in advance for the standard sample of a CH₃⁺-implanted Si substrate. The cross-sections obtained here are reproduced well by a simple expression based on the partial wave analysis assuming a square well potential (width: r₀ = 2.67 × 10⁻¹³ cm, depth: V₀ = −36.9 MeV) within 1%. For the a-Si_1−xGe_x:H films whose elemental compositions were determined by ERDA/RBS, we measured the secondary ions yields of HCs₂⁺, SiCs₂⁺, H⁻, Si⁻ and Ge⁻ as a function of Ge concentration x. As a result, it is found that the useful yield ratios of HCs₂⁺/SiCs₂⁺, H⁻/Si⁻ and Ge⁻/Si⁻ are almost constant and thus the elemental depth profiles of the a-Si_1−xGe_x:H films can be also determined by secondary ion mass spectrometry (SIMS) within 10% free from a matrix effect.     

Spin relaxation studies of the muonium substituted ethyl radical in the gas phase

This short communication draws attention to the power of μSR and related measurements in providing an unusually complete characterisation of muonium substituted organic radicals in the gas phase. Spectroscopic information is available from muon spin rotation and muon level crossing resonance, giving all the nuclear hyperfine coupling constants, just as in the liquid phase. In addition, measurements of the relaxation time of the muon Zeeman energy become possible; these are potentially informative on the molecular collision dynamics. Demonstration results are presented in summary for the muonium substituted ethyl radical, ĊH₂CH₂Mu, in ethene gas.     

μSR Investigation of magnetic phases in R1−xSrxCoO3 oxides (R=Pr, Nd)

We report results of our muon spin relaxation measurements in the series of polycrystalline compounds Pr_1−xSr_xCoO₃ (x=0.3, 0.4 and 0.5) and Nd_1−xSr_xCoO₃ (x=0.3 and 0.5). For the Pr-based samples our data clearly indicate the existence of two magnetic transitions, as also inferred from macroscopic measurements. While the high temperature transition is typical for cobaltites (∼200 K), the low temperature one is unusual. In our experiments it occurs below about 120 K and it manifests itself as a change in the slope of the temperature variation of the muon spin depolarization rate λ(T). For the Nd-based samples we found an increase of the muon spin depolarization rate below 45 K, temperature at which the sample is ferrimagnetic, when the Nd sublattice coupled antiparallel to the Co lattice. No phase separation could be evidenced in our samples by μSR experiments.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

Field and temperature induced colossal strain in Gd5(SixGe1−x)4

Gd₅(Si_xGe_1−x)₄, known for its giant magnetocaloric effect, also exhibits a colossal strain of the order of 10,000 ppm for a single crystal near its coupled first-order magnetic-structural phase transition, which occurs near room temperature for the compositions 0.41≤x≤0.575. Such colossal strain can be utilised for both magnetic sensor and actuator applications. In this study, various measurements have been carried out on strain as a function of magnetic field strength and as a function of temperature on single crystal Gd₅Si₂Ge₂ (x=0.5), and polycrystalline Gd₅Si_1.95Ge_2.05 (x=0.487) and Gd₅Si_2.09Ge_1.91 (x=0.52). Additionally a giant magnetostriction/thermally induced strain of the order of 1800 ppm in polycrystalline Gd₅Si_2.09Ge_1.91 was observed at its first order phase transition on varying temperature using a Peltier cell without the use of bulky equipment such as cryostat or superconducting magnet.     

Composition dependent structural modification in relaxed Si1−xGex films by 100 MeV Au beam

We report the modification of molecular beam epitaxy grown strain-relaxed single crystalline Si_1−xGe_x layers for x=0.5 and 0.7 as a result of irradiation with 100 MeV Au ions at 80 K. The samples were structurally characterized by Rutherford backscattering spectrometry/channeling, transmission electron microscopy (TEM) and high-resolution X-ray diffraction before and after irradiation with fluences of 5×10¹⁰, 1×10¹¹ and 1×10¹² ions/cm², respectively. No track formation was detected in both the samples from TEM studies and finally, the crystalline to amorphous phase transformation at 1×10¹² ions/cm² was examined to be higher for Si_0.3Ge_0.7 layers compared to Si_0.5Ge_0.5 layers.     

Si/Si1−xGex/Si-based quantum wells infrared photodetector operating at 1.55 μm

A quantum well infrared photodetector consisting of self-assembled type II SiGe/Si based quantum wells operating around 1.55 μm at room temperature has been investigated. The Si_1−yGe_y/Si/Si_1−xGe_x/Si/Si_1−yGe_y stack results in a ‘W’ like profiles of the conduction and valence bands strain-compensated in the two low absorption windows of silica fibers infrared photodetectors have been proposed. Such computations have been used for the study of the p-i-n infrared photodetectors operating, around (1.3–1.55 μm) at room temperature. The quantum transport properties of electrons and holes were approved with Schrödinger and kinetic equations resolved self-consistently with the Poisson equation. The theoretical performances of the photodetector were carried out such as the dark current mechanisms, the temperature dependence of normalized dark current and the zero-bias resistance area product (R₀A).     

Radio-frequency μSR experiments at the ISIS pulsed muon facility

This paper explores the use of pulsed radio-frequency (RF) techniques to remove the frequency limitations imposed on conventional transverse muon spin rotation (μSR) experiments at a pulsed muon source by the finite muon pulse width. The implementation of the 90° pulse technique is demonstrated by observing the free precession signal of diamagnetic muons implanted in polythene, the change in signal amplitude as a function of RF pulse length is plotted and the precise condition for a 90° pulse determined. The technique is evaluated by comparing measurements made using conventional spin rotation experiments to those employing pulsed RF methods. The potential for applying standard NMR multiple-pulse methods to the μSR experiment is considered and the use of two-pulse RF sequences (90° _x ?τ?90° _x and 90° _x ?τ?180° _x ) to form a muon spin echo demonstrated.     

Muon-spin-rotation study of muon polarization losses in plastic scintillators and quartz

Muon polarization losses in plastic scintillators of two types and in fused quartz have been studied by the μSR method. The muon and muonium spin precession spectra have been measured on the μSR setup placed at the output of the muon channel of the Gatchina synchrocyclotron. It has been shown that a significant fraction of stopped muons participate in the formation of the muonium. As a result, these muons lose their polarization completely. The magnitude of muon depolarization depends considerably on the type of plastic. It has been found that the muon spin precession frequency in fused quartz in an external magnetic field (F _{Q, μ} = 0.116 ± 0.002 MHz) is shifted with respect to that in plastic scintillators (F _{1, μ} = 0.101 ± 0.005 MHz and F _{2, μ} = 0.101 ± 0.002 MHz).     

Spin state transition in Ca-doped Na0.7CoO2 with the nominal Co valence below 3.16

In order to clarify the nature of the transition around 300 K in Ca-doped Na_0.7CoO₂, the magnetism of Na_0.7Ca_yCoO₂ with y=0.035 and 0.07 was investigated in a positive muon spin rotation and relaxation (μ⁺SR) experiment. Transverse field μ⁺SR measurements showed that the spin state of the Co ions in Na_0.7Ca_0.07CoO₂ changes at around 300 K; i.e. the exponential relaxation rate vs. T curve exhibited a large maximum around 300 K with an accompanying small peak in the muonic Knight shift, whereas no changes were found in the asymmetry, similar to [Ca₂CoO₃]_0.62[CoO₂] at around 400 K.Although the spin-density-wave (SDW) state exists for Na_xCoO₂ with x≥0.75 at low temperatures, zero-field μ⁺SR spectra in the Ca-doped samples showed no muon spin precessions down to 1.8 K but only fast relaxations indicating disorder. This is probably because the Ca²⁺ ions in the Na planes alter the charge and/or spin distribution in the CoO₂ planes. As a result, the SDW order is hindered, as the nominal Co valence is decreased below 3.16.     

Spin gap systems: What can be measured by muon spin relaxation?

Muon spin relaxation (μSR) and nuclear magnetic resonance (NMR) are powerful probes of magnetism, which have been extensively applied to studies of spin gap systems. Comparison of results obtained with the two techniques gives complementary results, as each is sensitive to different aspects of spin gap magnetism. We discuss recent μSR measurements of the spin ladder compounds Sr _n?1Cu _n+1O_2n , pure and doped Haldane materials (Y_2?x Ca _x )Ba(Ni_1?y Mg _y )O₅, and doped spin Peierls compounds (Cu_1?x Zn _x )(Ge_1?y Si _y )O₃.     

Magnetism on Mg1−xZnxCyNi3

The magnetic phase diagram for Mg_1−xZn_xC_yNi₃ has been tentatively constructed based on magnetization and muon spin relaxation (μSR) measurements. The superconducting phase was observed to fade as x (y) increases (decreases). The low y samples show early stages of long-range ferromagnetism, or complete long-range ferromagnetism. In the phase diagram, the ferromagnetic phase exists in addition to the superconducting phase, suggesting that there is some correlation between superconductivity and ferromagnetism, even though the coexistence of ferromagnetism and superconductivity is not observed from the μSR measurements down to 20 mK for the superconducting sample (T_c=2.5 K, (x, y)=(0, 0.9)).     

Growth and properties of magnetron cosputtering grown MnxGe1−x on Si (001)

We have grown Mn_xGe_1−x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn_0.06Ge_0.94 film while new phase appears in the Mn_0.1Ge_0.9 film. Nanocrystals are formed in the Mn_0.06Ge_0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn_0.06Ge_0.94 film is p-type semiconductor and hole carrier concentration is 6.07×10¹⁹ cm⁻³ while the Mn_xGe_1−x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn_0.06Ge_0.94 film is ferromagnetic at room temperature.     

Evolution of SiGe nanoclusters and micro defects in the Si1−xGex layer fabricated by two-step ion implantation and subsequent thermal annealing

The Si_1−xGe_x thin layer is fabricated by two-step Ge ion implantation into (0 0 1) silicon. The embedded SiGe nanoclusters are produced in the Si_1−xGe_x layer upon further annealing. The number and size of the nanoclusters changed due to the Ge diffusion during annealing. Micro defects around the nanoclusters are illustrated. It is revealed that the change of Si-Si phonon mode is causing by the nanoclusters and micro defects.     

Positive secondary Ion emission from Si1−xGex bombarded by O2

The positive secondary ion yields of B⁺ (dopant), Si⁺ and Ge⁺ were measured for Si_1−xGe_x (0 ≤ x ≤ 1) sputtered by 5.5 keV ¹⁶O₂⁺ and ¹⁸O₂⁺. It is found that the useful yields of Ge⁺ and B⁺ suddenly drop by one order of magnitude by varying the elemental composition x from 0.9 to 1 (pure Ge). In order to clarify the role of oxygen located near surface regions, we determined the depth profiles of ¹⁸O by nuclear resonant reaction analysis (NRA: ¹⁸O(p,α)¹⁵N) and medium energy ion scattering (MEIS) spectrometry. Based on the useful yields of B⁺, Si⁺ and Ge⁺ dependent on x together with the elemental depth profiles determined by NRA and MEIS, we propose a probable surface structure formed by 5.5 keV O₂⁺ irradiation.     

Electronic states and phonon properties of GexSi1−x nanostructures

Ge_xSi_1−x nanostructures that can be manipulated through size reduction, geometry variation, and alloying, are considered as one of the key developments for next generation technologies, due to their easy processing, unique properties, and compatibility with the existent silicon-based microelectronic industry. In this review, we have thoroughly discussed the major advances in electronic structures and phonon properties of Ge_xSi_1−x nanocrystals (NCs). Experimental and theoretical characterization related to several main factors, for example, size, composition, strain, temperature, and interface and surface were presented with special emphasis in low-frequency Raman scattering. Current difficulties in explaining the Raman spectra are the assignment of the low-frequency modes because of the complexity of the environment around the NCs, thus different theoretical models are introduced in detail to deal with different properties of Ge_xSi_1−x alloy NCs including Lamb’s theory, complex-frequency (CF) model, core–shell matrix (CMS) model and spatial coherence effect model.     

Effect of Si/Ge ratio on resistivity and thermopower in Gd5SixGe4−x magnetocaloric compounds

The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd₅Si_xGe_4−x compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd₅(Si,Ge)₄-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of −8 μV/K was obtained at the magneto-structural transition for the x=2 compound.     

Comparative Theoretical Study of Hyperfine Interactions of Muonium in A- and B-Form DNA

Muon Spin Relaxation (μSR) experiments in A- and B-form DNA have shown evidence for an enhanced electron mobility in the more closely-packed A-form. Besides dynamic effects (electronic diffusion) that could cause the observed difference in muon spin relaxation, one should also carefully examine the difference in the strengths of the hyperfine interactions of the muon (μ ⁺) with the moving electron in the two forms of DNA, since this could contribute to the observed difference in the muon spin relaxation rates as well. We have therefore investigated the (static) trapping properties of muon and muonium (μ ⁺ e ⁻) in A-form and B-form DNA from first-principles with the aim to understand how the different structural geometries of A- and B-form DNA can influence the hyperfine interaction of trapped muonium.     

Preferential etching of Si–Si bond in the microcrystalline silicon germanium

Hydrogenated microcrystalline silicon germanium (μc-Si_1?xGe_x:H) films were investigated as a bottom cell absorber in multi-junction solar cells. μc-Si_1?xGe_x:H films were prepared using very high frequency (VHF, 60 MHz) plasma enhanced chemical vapor deposition (PECVD) systems working pressure of about 1.5 Torr. The precursor flow rates were carefully controlled to determine the phase transition point and to improve the crystallinity of μc-Si_1?xGe_x:H. A relatively high plasma power was necessary to have the high hydrogen (H₂) dilution. Raman spectroscopy study showed transition steps from amorphous to microstructure morphology as hydrogen dilution increasing. Crystallite Si–Ge and Ge–Ge bonds were occurred at relatively higher H₂ dilution compare to crystallite Si–Si bond. The rapidly increased Ge content as increasing the H₂ dilution is believed mainly due to the different decomposition rate of silane (SiH₄) and germane (GeH₄). The other reason of high Ge content even at the low GeH₄ precursor flow rate is probably due to the preferential etching of silicon atom by H₂. The preferential etching of Si–H possibly occurred in very highly concentrated H₂ plasma due to the preferential attachment of Si–H. The compositions of μc-Si_1?xGe_x:H films measured using RBS were Si_0.83Ge_0.17, Si_0.67Ge_0.33 and Si_0.59Ge_0.41 at H₂/SiH₄ flow rate of 60, 80 and 100, respectively. μc-Si_1?xGe_x:H films showed the dark (σ_d) and photo conductivity (σ_p) of about 10^?7 and 10^?5 S/cm, respectively and photo response (σ_p/σ_d) was about 10². This study will present the comprehensive evaluation of crystallization behavior of μc-Si_1?xGe_x:H films.