Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

In this study deep level transient spectroscopy has been performed on boron–nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N_A–N_D)∼3×10¹⁷ cm⁻³. We observed a hole H₁ majority carrier and an electron E₁ minority carrier traps in the device having activation energies E_v+0.24 eV, E_c −0.41 eV, respectively. The capture cross-section and trap concentration of H₁ and E₁ levels were found to be (5×10⁻¹⁹ cm², 2×10¹⁵ cm⁻³) and (1.6×10⁻¹⁶ cm², 3×10¹⁵ cm⁻³), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H₁ defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E₁ defect to a nitrogen donor.     

六方碳化硅中的深能级缺陷

文章作者利用深能级瞬态谱(DLTS)，正电子湮灭谱(PAS)和光致荧光谱(PL)等谱分析技术研究了六方碳化硅中具有电活性的深能级缺陷、这些深能级缺陷分别通过不同能量的电子辐照、中子辐照，或氦离子注入等产生．经过研究和分析各种实验测试的相关图谱，作者给出了六方碳化硅中一些重要的深能级缺陷在可控辐照条件下产生和退火行为的研究结果以及这些深能级缺陷相关结构的实验依据．     

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Several optically observed deep level defects in SiC are still unidentified and little is published on their behavior. One of the commonly observed deep level defects in semi-insulating SiC is UD-1.     

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at E_V+0.09 eV and E_V+0.31 eV and an electron trap at E_C−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at E_V+0.26 eV. Above room temperature annealing studies revealed new hole traps at E_V+0.27 eV, E_V+0.30 eV and E_V+0.40 eV.