Magnetic barrier in a two-dimensional hole gas

Transport properties of a magnetic barrier in a Ga_xAl_1−xAs based two-dimensional hole gas are reported. A ferromagnetic cobalt film, separated by an AlO_x layer from the semiconductor in order to prevent leakage currents, is magnetized in-plane, such that the fringe field generates a localized perpendicular magnetic field acting as a magnetic barrier. The resistance as a function of the in-plane magnetic field shows a characteristic minimum at the coercive field of the ferromagnetic film. Semiclassical simulations based on the Landauer–Büttiker formalism show good agreement with the experiment.     

Properties of domain walls and magnetoresistance in low-doped La<Subscript>2−<Emphasis Type="Italic">y</Emphasis></Subscript>Sr<Subscript>y</Subscript>CuO<Subscript>4</Subscript>

The properties of the diagonal stripe structures of the Hubbard model are theoretically studied in relation to the incommensurate spin order and the magnetic effects detected in the dielectric phase of low-doped La_2?y Sr_yCuO₄ (y ≤ 0.05). The mean-field approximation is used to investigate the properties of the solutions with domain walls between antiphase antiferromagnetic domains that are centered on bonds. Such periodic structures with 2l sites in a unit cell are shown to have 2(l ? 1) levels in the lower and upper Hubbard subbands and two levels that are separated into the Hubbard gap and correspond to quasi-one-dimensional states localized on domain walls. The calculation results are employed to check the assumption that the low conduction of the dielectric LSCO phase occurs via the network of domain walls. The maximum relative change in the magnetoresistance during a spin-flop transition in a critical magnetic field is estimated, and the giant magnetoresistance is qualitatively explained.     

Monodisperse Co,Zn-Ferrite nanocrystals: Controlled synthesis,characterization and magnetic properties

Co_xZn_yFe_3−x−yO₄ ferrite (x=1 to 0; y=0 to1) nanocrystals have been synthesized by reverse microemulsion method. The nanocrystals are then comprehensively characterized by X-ray diffraction, Fourier transform infrared spectroscopy, Field emission transmission electron microscopy (FETEM), and magnetic properties were measured by using Vibrating sample magnetometer. X-ray analysis showed that all the crystals were cubic spinel. The lattice constant increased with the increase in Zn substitution. FETEM reveals that particle size varies in the range from 3 to 6 nm. As the concentration of Zn increases the magnetic behavior varies from ferromagnetic at y=0 and 0.2 to superparamagnetic to paramagnetic at y=1. The Curie temperature decreases with increasing concentration of Zn.     

Effect of the magnetic field in the plane of a garnet ferrite film with orthorhombic magnetic anisotropy on the dynamics of domain walls

The effect of an in-plane magnetic field on the dependence of the domain-wall velocity on the acting magnetic field is investigated for bismuth-containing garnet ferrite single-crystal films of the composition (Bi,Y,Pr)₃(Fe,Ga)₅O₁₂ with the (210) orientation. The in-plane magnetic field is applied along the 〈120〉 and 〈001〉 crystallographic axes. The domain-wall velocity is measured in directions perpendicular and parallel to the in-plane magnetic field.     

Model of magnetic anisotropy in disordered semimagnetic semiconductors

We propose a model explaining the origin of cubic magnetic anisotropy in disordered semiconductor. We show that the magnetic anisotropy changes with the position of the Fermi energy in the valence band and the level of disorder in the crystal. The method is applied to Pb_1−x−ySn_yMn_xTe and Sn_1−xMn_xTe ferromagnetic semiconductor crystals.     

Structural, magnetic and electrical transport properties of Co doping in LaKFeMoO6 double perovskite

The structural, magnetic and transport properties of La_1+xK_1−xFe_1−yCo_yMoO₆ (0.0≤x≤0.1 and 0.1≤y≤0.2) series are studied. At room temperature, the crystal structure is a monoclinic system with space group P2₁/n. The antisite defect lowers with Co doping in LaKFe_1−yCo_yMoO₆ series. However, it increases with the substitution of K by La. Magnetizations increase with the increase in Co content (x=0) and with the La substitution for K, respectively. All compounds demonstrate semiconducting behavior. Their electrical resistivities increase with Co content for LaKFe_1−yCo_yMoO₆ and also increase with La for La_1+xK_1−xFe_1−yCo_yMoO₆. For the LaKFe_1−yCo_yMoO₆ the electrical transport behavior can be described by Mott variable range hopping model in the studied temperature range, whereas for the La_1+xK_1−xFe_1−yCo_yMoO₆ (x≠0 and y≠0) the electrical transport behavior follows the Mott and ES variable range hopping model in high and low temperature ranges, respectively. Each sample exhibits a large magnetoresistance effect.     

Composition dependence of magnetic anisotropy and quadratic magnetooptical effect in epitaxial films of the Heusler alloy Co2MnGe

Magnetic anisotropy and magnetooptic Kerr effect for epitaxial films of Co_xMn_yGe_1−x−y grown on Ge (1 1 1) substrates have been studied systematically in the compositional vicinity of the Heusler alloy Co₂MnGe. A large quadratic magnetooptic Kerr effect has been observed within a narrow region of composition centered around the Co to Mn atomic ratio of 2. The effect has been used to probe and quantify the magnetic anisotropy of the system, which is shown to have a strong sixfold in-plane component accompanied by a weak uniaxial component at room temperature. These properties are shown to depend sensitively on atomic ratio between Co and Mn, indicating the presence of an intrinsic composition-driven phenomenon.     

Magnetization of epitaxial MnGe alloys on Ge(1 1 1) substrates

The structural and magnetic properties of an Mn rich solid phase epitaxy Mn_xGe_1−x alloy grown on a clean 2 × 8-Ge(1 1 1) surface, with a Curie temperature of about 300 K are investigated. Magneto-optical  Kerr effect infers the existence of in-plane easy magnetization direction. We describe the epitaxial registry condition, the room temperature—zero field magnetic structure observed by magnetic force microscopy and the magneto-optical properties. The observations are consistent with the formation of epitaxial Mn₅Ge₃ alloy, with a modulated magnetic structure characterized by asymmetric 180° Bloch walls consisting of a vortex-like configuration of the local magnetization.     

Influence of Cd and Cr substitutions on the magnetization and permeability of magnesium ferrites

Magnetization and permeability of polycrystalline ferrites with general formula Cd_xMg_1−xFe_2−yCr_yO₄ (x=0, 0.2, 0.4, 0.6, 0.8, 1.0; y=0, 0.05 and 0.10) were studied. Study of saturation magnetization reveals that the Neel's two-sublattice model exists upto x=0.4, for y=0, 0.05 and 0.1 and a three-sublattice model (YK-model) is predominant for x>0.4 and y=0, 0.05 and 0.10. The saturation magnetization and magnetic moment were found to decrease with the increase in Cr³⁺ contents, which is attributed to the dilution of B–B site interaction. Variation of initial permeability with temperature revealed the long-range ferromagnetic ordering in the compounds with x=0.4. The sample with x?0.4 and y=0, 0.05 and 0.10 showed peaking behavior near Curie temperature, which is attributed to the decrease of anisotropy constant K₁ to zero. Low-frequency dispersion of initial permeability suggests domain wall displacement. Addition of Cd²⁺ resulted in a sharp decrease in Curie temperature. With the addition of Cr³⁺, initial permeability was found to decrease.     

Numerical simulation of wall dynamics in (111)-oriented garnet films in the presence of an in-plane magnetic field

The domain wall motion in the presence of an in-plane magnetic field H_y perpendicular to the wall is simulated using a fall implicit numerical scheme. Calculations are performed for the drive fields 0 Oe<H_z<15 Oe and in-plane fields -210 Oe?H_y?210 Oe. The relation between the average wall velocity $\text{v}$ and the drive field H_z is discussed considering the wall structure. It was found that an in-plane field increases the peak velocity of the wall and extends the range of the drive fields, where the linear mobility relation is valid. A dynamical Bloch line stacking was found for sufficiently large drives. The influence of an in-plane field on the angular span of horizontal Bloch lines is discussed also. In particular the occurrence of 2π-horizontal Bloch lines is described. Numerical results obtained with a full implicit method are compared with the experimental observations of bubble motion and good agreement is found for |H_y|≤100 Oe.     

Quantum wells under an in-plane magnetic field: Effect of the composition parameters on excited electron energy splitting

The dependence of the electronic spin-splitting energy on the composition parameters (x,y) in In_xGa_1?xAs–In_yAl_1?yAs-based quantum wells, has been calculated. InGaAs narrow gap structures, subjected to in-plane magnetic fields, have been selected because these structures have a big Landè factor. The dependence of the Landé factor both on the applied fields and composition parameters has been included for fixed well width and external electric field. Contributions from the interfaces and strain, which also depend on the composition, are included. Spin-splitting energy and density of states show a strong dependence on the above parameters.     

Magnetization processes in the narrow domain structures of amorphous ferromagnetic alloys

The magnetization processes within the narrow domain laminae of amorphous ferromagnetic alloys have been investigated by means of the magneto-optical Kerr effect. Changes of the domain width of the closure domains by a magnetic field applied perpendicular to the laminae have been determined for the alloys Fe₈₀B₂₀ and Fe₄₀Ni₄₀P₁₄B₆. These results are compared with theoretical calculations, assuming that wall displacements within the closure domains and rotations of the magnetization in the bulk domains take place simultaneously and a stray field free domain structure is developed. It turned out, that the closure domain structure on the surface of the sample vanishes at the same magnetic field where magnetic saturation is approached.     

Electrical and ferromagnetic properties of Tb-doped indium-tin oxide films fabricated by sol-gel method

The electrical and ferromagnetic properties of (In_0.9−xTb_xSn_0.1)₂O₃ and (In_0.99−yTb_0.01Sn_y)₂O₃ films fabricated by sol-gel method have been investigated. All the films show room temperature ferromagnetism. The magnetic moment per Tb ion of (In_0.9−xTb_xSn_0.1)₂O₃ films first increases and then decreases with the increasing Tb content. The variation of conductivity with Tb content is coincident with that of the magnetic moment. Furthermore, the conductivity and magnetic moment variations with Sn content y in (In_0.99−yTb_0.01Sn_y)₂O₃ films also have the similar trend. These results imply that the ferromagnetism may originate from the carrier-mediated mechanism.     

Magneto-optical properties of the iron garnet Tb3Fe5O12 near the magnetic compensation temperature

The magneto-optical susceptibility and magnetic hysteresis loops of the Faraday effect, which accompany the technical magnetization of the iron garnet Tb₃Fe₅O₁₂, have been investigated experimentally in the temperature region near the magnetic compensation point of this ferrimagnet T _c = 249 K. It has been found that, during the technical magnetization as the temperature approaches the magnetic compensation point T _c , the velocity of domain walls increases, whereas the magneto-optical susceptibility has local maxima to the right and to the left from T _c . Mentioned features of magneto-optical properties of the iron garnet Tb₃Fe₅O₁₂ are associated with the resonance natural frequency of the domain wall oscillations in the crystal with the frequency of the alternating magnetic field. It has been shown that the used theoretical model of the magnetic resonance of domain walls makes it possible to consistently describe (at the qualitative level) the revealed regularities of the variation of the Faraday effect in the iron garnet Tb₃Fe₅O₁₂ near T _c .     

Magnetic response of ferromagnet-superconductor bilayers

Magnetic measurements on a ferromagnet/insulator/superconductor (La_2/3Ca_1/3MnO₃/SrTiO₃/YBa₂Cu₃O_7−x) structures were performed with the field applied parallel to the plane of the film. We observed an evidence of a modification of the ferromagnetic domain structure in the magnetic layer induced by the superconducting transition in the neighboring superconducting YBa₂Cu₃O_7−x layer.     

A compounded rare-earth iron garnet single crystal exhibiting stable Faraday rotation against wavelength and temperature variation in the 1.55 μm band

The Bi, Tb and Yb partially substituted iron garnet bulk single crystals of Tb_3−x−yYb_yBi_xFe₅O₁₂ were grown by using Bi₂O₃/B₂O₃ as flux and accelerated crucible rotation technique for single-crystal growth. Faraday rotation (FR) spectra showed that the specific FR of the (Tb_0.91Yb_1.38Bi_0.71)Fe₅O₁₂ crystal under magnetic field at saturation was measured to be about −1617°/cm at λ=1.55 μm, Faraday rotation wavelength coefficient (FWC, 0.009%/nm) in the wavelength range of 1.50–1.62 μm and Faraday rotation temperature coefficient (FTC, 3.92×10⁻⁵/K) at λ=1.55 μm were even smaller than that of YIG. It is proven that through combining two types of Bi-substituted rare-earth iron garnets with opposite FWC and FTC signs, the compound rare-earth iron garnets with low FWC and FTC may be obtained due to the compensation effect. The saturation magnetization of (Tb_0.91Yb_1.38Bi_0.71) Fe₅O₁₂ crystal is 0.48×10⁶ A/M and is also much smaller than that of YIG. We have found empirically that there is a simple relationship between the FR θ_f(x) and Bi content x for Tb_3−x−yYb_yBi_xFe₅O₁₂, which is given by θ_f(x)=(−2759x+400)°/cm.     

Influence of a magnetic field on the hydrogen equilibrium pressure of RCo5Hx

The hydrogen equilibrium abessure above a two-phase mixture RCo₅H_x + RCo₅H_y can be changed slightly by applying a magnetic field. For H=10 kOe a relative change Δp/p ≈ 6×10⁻³ has been measured for R=La, x=3.35, y=4.3, T=295 K.     

Structure and magnetic properties of Ca1−x−yMgxCu2+yO3 influenced by isoelectronic substitution x

Phases of the composition Ca_1−x−yMg_xCu_2+yO₃ have been prepared for the first time. The compounds are isostructural with the known end-members CaCu₂O₃ and MgCu₂O₃ showing a two-leg spin-ladder-like connection of copper and oxygen atoms within the Cu₂O₃-layer. Opposite the spin ladders this layer is folded, which results in a long-range antiferromagnetic ordering of these phases. The Néel temperature can be adapted by variation of x in Ca_1−x−yMg_xCu_2+yO₃ between 24 and 80 K. Several structural features, which influence the magnetic ordering, are discussed.     

Influence of the concentration in Fe-doped BaTiO3 on magnetoelectric couping of layered composites BaTi1−xFexO3–Tb1−yDyyFe2−z

Perovskites BaTi_1−xFe_xO₃ has been synthesized with the concentration x ranging from 0.01 to 0.02. Their transformation point of ferroelectric to paraelectric and the corresponding latent heat of the phase transformation were observed to decrease with increasing the doping level of Fe³⁺. Bonded layered composites BaTi_1−xFe_xO₃–Tb_1−yDy_yFe_2−z have been fabricated and their magnetoelectric effect has been investigated. The sample containing a layer of perovskite BaTi_0.985Fe_0.015O₃ was found to show the maximum transverse ME voltage coefficient, which is about 1422 mV Oe⁻¹ cm⁻¹ under a magnetic field of 1580 Oe, in these bilayers. Analysis shows that the Fe-doped BaTiO₃ with doping level at about 1.5% should have largest piezoelectric coefficient in these ceramics BaTi_1−xFe_xO₃.